SiHG20N50C

Vishay Siliconix

Power MOSFET
PRODUCT SUMMARY
VDS (V) at TJ max. RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 76 21 34 Single
D

FEATURES
560 0.270

TO-247AC

Halogen-free According to IEC 61249-2-21 Definition Low Figure-of-Merit Ron x Qg 100 % Avalanche Tested High Peak Current Capability dV/dt Ruggedness Improved Trr/Qrr Improved Gate Charge High Power Dissipations Capability Compliant to RoHS Directive 2002/95/EC

S D G

S N-Channel MOSFET

ORDERING INFORMATION
Package Lead (Pb)-free Lead (Pb)-free and Halogen-free TO-247AC SiHG20N50C-E3 SiHG20N50C-GE3

ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted)

PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 C)e Pulsed Drain Currenta VGS at 10 V TC = 25 C TC = 100 C SYMBOL VDS VGS ID IDM EAS PD dV/dt TJ, Tstg for 10 s LIMIT 500 30 20 11 80 1.8 361 250 5 - 55 to + 150 300d W/C mJ W V/ns C A UNIT V

Linear Derating Factor Single Pulse Avalanche Energyb Maximum Power Dissipation Peak Diode Recovery dV/dtc Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) Notes a. Repetitive rating; pulse width limited by maximum junction temperature. b. VDD = 50 V, starting TJ = 25 C, L = 2.5 mH, Rg = 25 , IAS = 17 A. c. ISD 18 A, dI/dt 380 A/s, VDD VDS, TJ 150 C. d. 1.6 mm from case. e. Limited by maximum junction temperature.

THERMAL RESISTANCE RATINGS

PARAMETER Maximum Junction-to-Ambient Maximum Junction-to-Case (Drain) SYMBOL RthJA RthJC TYP. MAX. 40 0.5 UNIT C/W

Document Number: 91382 S11-0440-Rev. C, 14-Mar-11

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This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

SiHG20N50C
Vishay Siliconix
SPECIFICATIONS (TJ = 25 C, unless otherwise noted)
PARAMETER Static Drain-Source Breakdown Voltage VDS Temperature Coefficient Gate-Source Threshold Voltage (N) Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance Forward Transconductance Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Gate Input Resistance Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulsed Diode Forward Current Body Diode Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Reverse Recovery Current IS ISM VSD trr Qrr IRRM TJ = 25 C, IF = IS, dI/dt = 100 A/s, V = 35 V MOSFET symbol showing the integral reverse p - n junction diode
D

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

VDS VDS/TJ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf Rg

VGS = 0 V, ID = 250 A Reference to 25 C, ID = 1 mA VDS = VGS, ID = 250 A VGS = 30 V VDS = 500 V, VGS = 0 V VDS = 400 V, VGS = 0 V, TJ = 125 C VGS = 10 V ID = 10 A VDS = 50 V, ID = 10 A

500 3.0 -

700 0.225 6.4 2451 300 26 65 21 29 80 27 32 44 1.1

5.0 100 25 250 0.270 2942 360 32 76 -

V mV/C V nA A S

VGS = 0 V, VDS = 25 V, f = 1.0 MHz

pF

VGS = 10 V

ID = 18 A, VDS = 400 V

nC

VDD = 250 V, ID = 18 A, Rg = 9.1 f = 1 MHz, open drain

ns

503 6.7 30

20 A 80 1.5 V ns C A

TJ = 25 C, IS = 18 A, VGS = 0 V

The information shown here is a preliminary product proposal, not a commercial product datasheet. Vishay Siliconix is not committed to produce this or any similar product. This information should not be used for design purposes, nor construed as an offer to furnish or sell such products.

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Document Number: 91382 S11-0440-Rev. C, 14-Mar-11

This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

SiHG20N50C
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 C, unless otherwise noted)

70 60

ID, Drain Current (A)

ID, Drain Current (A)

50 40 30 20 10 0

VGS Top 15 V 14 V 13 V 12 V 11 V 10 V 9.0 V 8.0 V 7.0 V 6.0 V Bottom 5.0 V

100 TJ = 25 C TJ = 150 C 10

TJ = 25 C 1

0.1

7.0 V 0.01 0 6 12 18 24 30 5 6 7 8 9 10

VDS, Drain-to-Source Voltage (V)

VGS, Gate-to-Source Voltage (V)

Fig. 1 - Typical Output Characteristics, TC = 25 C

Fig. 3 - Typical Transfer Characteristics

40

RDS(on), Drain-to-Source On Resistance (Normalized)

ID, Drain Current (A)

VGS Top 15 V 14 V 13 V 12 V 30 11 V 10 V 9.0 V 8.0 V 7.0 V 20 6.0 V Bottom 5.0 V

3 2.5 2 1.5 1 0.5 0 - 60 - 40 - 20 ID = 17 A

TJ = 150 C

VGS = 10 V

7.0 V 10

0 0 6 12 18 24 30

20 40 60 80 100 120 140 160

VDS, Drain-to-Source Voltage (V)

TJ, Junction Temperature (C)

Fig. 2 - Typical Output Characteristics, TC = 150 C

Fig. 4 - Normalized On-Resistance vs. Temperature

Document Number: 91382 S11-0440-Rev. C, 14-Mar-11

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SiHG20N50C
Vishay Siliconix

105 VGS = 0 V, f = 1 MHz Ciss = Cgs + Cgd, Cds Shorted Crss = Cgd Coss = Cds + Cgd Ciss 103

1000 Operation in this area limited by RDS(on)

Capacitance (pF)

104

ID, Drain Current (A)

100

10

100 s 1 ms

102

Coss

TC = 25 C TJ = 150 C Single Pulse 10 100

10 ms

10 1 10 100

Crss 1000

0.1 1000 10 000

VDS, Drain-to-Source Voltage (V)

Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage

VDS, Drain-to-Source Voltage (V)

Fig. 8 - Maximum Safe Operating Area

20

20 ID = 17 A VDS = 400 V VDS = 250 V VDS = 100 V

VGS, Gate-to-Source Voltage (V)

16

12

ID, Drain Current (A)

90 120

15

10

0 0 30 60

0 25 50 75 100 125 150

QG, Total Gate Charge (nC)

Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage

TC, Case Temperature (C)

Fig. 9 - Maximum Drain Current vs. Case Temperature

100

ISD, Reverse Drain Current (A)

10

TJ = 150 C

TJ = 25 C

0.1 0.2 0.5 0.8

VGS = 0 V 1.1 1.4

VSD, Source-to-Drain Voltage (V)

Fig. 7 - Typical Source-Drain Diode Forward Voltage

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Document Number: 91382 S11-0440-Rev. C, 14-Mar-11

This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

SiHG20N50C
Vishay Siliconix
1

Normalized Effective Transient Thermal Impedance

Duty Cycle = 0.5

0.2 0.1 0.1 0.05 0.02 Single Pulse 10-3 10-2 0.1 1

0.01 10-4

Pulse Time (s) Fig. 10 - Normalized Thermal Transient Impedance, Junction-to-Case (TO-247)
VDS VGS Rg RD

VDS tp VDD
+ - VDD

D.U.T.

10 V
Pulse width 1 s Duty factor 0.1 %

VDS

IAS
Fig. 11a - Switching Time Test Circuit Fig. 12b - Unclamped Inductive Waveforms
VDS 90 % 10 V QGS 10 % VGS td(on) tr td(off) tf QG

QGD

VG

Fig. 11b - Switching Time Waveforms

Charge
Fig. 13a - Basic Gate Charge Waveform

L Vary tp to obtain required IAS Rg VDS

Current regulator Same type as D.U.T.

50 k

D.U.T IAS

+ -

12 V

0.2 F 0.3 F

V DD

D.U.T.

VDS

10 V tp 0.01
VGS
3 mA

Fig. 12a - Unclamped Inductive Test Circuit

IG ID Current sampling resistors

Fig. 13b - Gate Charge Test Circuit

Document Number: 91382 S11-0440-Rev. C, 14-Mar-11

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This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

SiHG20N50C
Vishay Siliconix

Peak Diode Recovery dV/dt Test Circuit

+ Circuit layout considerations Low stray inductance Ground plane Low leakage inductance current transformer

D.U.T.

Rg

dV/dt controlled by Rg Driver same type as D.U.T. ISD controlled by duty factor D D.U.T. - device under test

+ VDD

Driver gate drive P.W. Period D= P.W. Period VGS = 10 Va

D.U.T. lSD waveform Reverse recovery current

Body diode forward current dI/dt D.U.T. VDS waveform Diode recovery dV/dt

VDD

Re-applied voltage Inductor current

Body diode forward drop

Ripple 5 % Note a. VGS = 5 V for logic level devices

ISD

Fig. 14 - For N-Channel

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Document Number: 91382 S11-0440-Rev. C, 14-Mar-11

This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Package Information
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Vishay Siliconix

TO-247AC (High Voltage)

4 B 3 R/2 Q 2xR (2) 1 5 L1 C L See view B 2 x b2 3xb 0.10 M C A M 2x e b4 A1 Planting D DE E C C (c) c1 (b, b2, b4) View B (4) Section C - C, D - D, E - E (b1, b3, b5) Base metal C A 5 E1 0.01 M D B M View A - A 2 3 E E/2 S A2 A D2 5 D D Thermal pad 4 D1 A 7 P k M DBM A (Datum B) P1

MILLIMETERS DIM. MIN. MAX. A 4.58 5.31 A1 2.21 2.59 A2 1.17 2.49 b 0.99 1.40 b1 0.99 1.35 b2 1.53 2.39 b3 1.65 2.37 b4 2.42 3.43 b5 2.59 3.38 c 0.38 0.86 c1 0.38 0.76 D 19.71 20.82 D1 13.08 ECN: X12-0167-Rev. B, 24-Sep-12 DWG: 5971

INCHES MIN. MAX. 0.180 0.209 0.087 0.102 0.046 0.098 0.039 0.055 0.039 0.053 0.060 0.094 0.065 0.093 0.095 0.135 0.102 0.133 0.015 0.034 0.015 0.030 0.776 0.820 0.515 -

DIM. D2 E E1 e k L L1 N P P1 Q R S

MILLIMETERS MIN. MAX. 0.51 1.30 15.29 15.87 13.72 5.46 BSC 0.254 14.20 16.25 3.71 4.29 7.62 BSC 3.51 3.66 7.39 5.31 5.69 4.52 5.49 5.51 BSC

INCHES MIN. MAX. 0.020 0.051 0.602 0.625 0.540 0.215 BSC 0.010 0.559 0.640 0.146 0.169 0.300 BSC 0.138 0.144 0.291 0.209 0.224 0.178 0.216 0.217 BSC

Notes 1. Dimensioning and tolerancing per ASME Y14.5M-1994. 2. Contour of slot optional. 3. Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body. 4. Thermal pad contour optional with dimensions D1 and E1. 5. Lead finish uncontrolled in L1. 6. P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154"). 7. Outline conforms to JEDEC outline TO-247 with exception of dimension c. 8. Xian and Mingxin actually photo.

Revision: 24-Sep-12

Document Number: 91360 1 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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Revision: 02-Oct-12

Document Number: 91000