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ACKNOWLEDGEMENT
First of all, thanks to ALLAH S.W.T for his mercy and guidance in giving me full
strength to complete this final year project about Analysis of Deposited Carbon based on
Electron Beam Induced Deposition in Scanning Electron Microscopy using Secondary Ion
Mass Spectrometry. Many thanks to my supervisor, Encik Shaiful Nizam bin Mohyar for
his support, guidance and advice me in complete this final year project. I will never forget
his kindness in helping me to finish my project. The report tested my abilities mentally and
physically.
Furthermore, I would like to thanks Mr Phang, he is the most important technician
that help me handle the Scanning Electron Microscope (SEM) and Secondary Ion Mass
Spectroscopy (SIMS). He helped me a lot to ensure I complete the project. Also to, all the
cleanroom and failure Analysis Laboratory staff for their kindness. Then, I would like thanks
to my parents, they support me mentally and physically not even in project also for my
studies.
In addition, grateful acknowledgement to my partner, Siti Fatimah, whose helped me
a lot and her kindness to tolerate during to accomplish the project. Also to all other my
friends who never give up in giving their support to me in all aspects of life. Thank you very
much my friends, I will never forget all of your kindness.
Thanks
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APPROVAL AND DECLARATION SHEET
This project report titled Analysis of Deposited Carbon based on Electron Beam
Induced
Deposition in Scanning Electron Microscopy using Secondary Ion Mass Spectrometry
was
prepared and submitted by Nur Liana Binti Kamal (Matrix Number: 041010509) and
has
been found satisfactory in terms of scope, quality and presentation as partial fulfillment
of
the requirement for the Bachelor of Engineering ( Microelectronic Engineering ) in
Universiti Malaysia Perlis (UniMAP).
Checked and Approved by
_______________________
(SHAIFUL NIZAM BIN MOHYAR)
Project Supervisor
School of Microelectronic Engineering
Universiti Malaysia Perlis
March 2008
iii
ANALISA KOMPOSISI KARBON SELEPAS PROSES TIMBUNAN SINAR
ARUHAN
ELEKTRON MENGGUNAKAN SPEKTROMETER JISIM ION SEKUNDER
ABSTRAK
Analisa komposisi karbon selepas menjalankan proses timbunan sinar aruhan elektron
menggunakan Spektrometer Jisim Ion Sekunder. Proses timbunan sinar aruhan elektron
adalah
menggunakan Mikroskop Pengimbas Electron. Masa yang ditetapkan untuk mengimbas
electron
pada sampel adalah 15minit dan Voltan yang disalurkan berubah-ubah, iaitu 5 kVsehingga 20
kV. Jenis Mikroskop Pengimbas Elektron yang digunakan ialah JEOL JSM 6460LA. SIMS di
gunakan untuk menganalisa kandungan komposisi bahan pada sesuatu sampel. Ia
menggunakan
ion Galium sebagai sumber untuk memisahkan ion daripada sampel. Ini kerana, ion gallium
merupakan sejenis ion yang berat. Ia mampu untuk memisahkan ion-ion ringan yang terdapat
pada sesuatu sampel. Projek ini dijalankan untuk membuktikan bahawa dengan
menggunakan
sampel kosong untuk melakukan timbunan sinar aruhan elektron juga dapat dilakukan, ini
kerana
sebelum ini semua kajian yang telah dijalankan memerlukan sampel disalut terlebih dahulu
menggunakan perintang foto, tetapi kajian ini hanya memerlukan sampel yang kosong dan
akan
dibina timbunan sinar aruhan elekron di atasnya. Selepas proses timbunan elektron,
komposisi
yang terdapat di atas sampel akan dianalisa dengan menggunakan SIMS. Keputusan akan
mendapati bahawa karbon merupakan sumber pembentukan yang utama.
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ANALYSIS OF THE DEPOSITED CARBON DURING ELECTRON BEAM
INDUCED
DEPOSITION (EBID) IN SCANNING ELECTRON MICROSCOPE USING
SECONDARY ION MASS SPECTROMETRY (SIMS)
ABSTRACT
Many experiments on the mechanics of nanostructures require the creation of rigid
clamps at specific locations. In this work, electron beam induced deposition (EBID) has been
used to deposit carbon films that are similar to those that have recently been used for
clamping
nanostructures. The film deposition rate was accelerated by placing a paraffin source of
hydrocarbon near the area where the EBID deposits were made. High-resolution transmission
electron microscopy, electron-energy-loss spectroscopy, Raman spectroscopy, secondary-
ionmass
spectrometry, and nanoindentation were used to characterize the chemical composition and
the mechanics of the carbonaceous deposits.
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TABLE OF CONTENTS
ACKNOWLEDGMENT i
APPROVAL AND DECLARATION SHEET ii
ABSTRAK iii
ABSTRACT iv
TABLE OF CONTENTS v
LIST OF FIGURES viii
LIST OF TABLE x
CHAPTER 1 INTRODUCTION
1.1 Background Of Project 1
1.2 Project Objectives 2
1.3 Project Scope 3
1.4 Experimental Work 3
CHAPTER 2 LITERATURE REVIEW
2.1 Scanning Electron Microscope 4
2.1.1 Principle of SEM 5
2.1.2 Electron Beam Induced Deposition 5
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2.2 Secondary Ion Mass Spectroscopy 9
2.2.1 Static SIMS 10
2.2.2 Principle of SIMS 10
2.3 Application of Square Shaped Structure 12
CHAPTER 3 METHODOLOGY
3.1 Materials 13
3.1.1 Silicon Wafer 13
3.1.2 BOE 13
3.1.3 Acetone 13
3.2 Equipment 14
3.2.1 SEM 15
3.2.2 SIMS 15
3.2.3 Diamond Scrapper 15
3.2.4 Air pump 15
3.3 Methodology 16
3.3.1 Sample Preparation 16
3.3.2 Sample Cleaning 16
3.3.3 Loading Specimen 16
3.3.4 EBID process Using SEM 17
3.3.5 SEM Image Observation 19
3.3.6 Unloading Specimen 19
3.4 Scanning Operation for SIMS 19
CHAPTER 4 RESULT AND DISCUSSION
vii
4.1 Images of SEM for magnification X90000 21
4.2 Images of SEM for Magnification X3000 22
4.3 Spectrum of SIMS 30
4.3 Spectrum for 5kVolt 30
4.4 Spectrum for 10kVolt 30
4.5 Spectrum for 15kVolt
4.3.3 Spectrum for 20kVolt 32
4.4 Spectrum of EDX 33
4.4.1 Spectrum for 20kVolt 33
CHAPTER 5 CONCLUSION AND RECOMMENDATION
5.1 Summary 34
5.2 Recommendation 35
viii
LIST OF FIGURES
1.1 flow chart of the experimental work 3
2.1 EBID mechanism 6
2.2 Mini SIMS operation 8
2.3 Mini SIMS operation 9
2.4 SIMS Mechanism 10
2.5 Schematic of the MIM tri layer diode 11
2.6 Current-voltage characteristics of the MIM diode 12
3.1 Flow chart EBID mechanism 18
3.2 Flow chart Methodology 21
4.1 (a),(b),(c),(d) SEM image for magnification 90000X 22
4.2 (a),(b),(c),(d) SEM image for magnification 3000X 22
4.3 effect of the acceleration voltage on the interaction volume 23
4.4 effect of the acceleration voltage on samples with different atomic number 24
4.5 The interaction volume increases, more backscattered electrons will be able
to escape from a bigger volume 25
4.6 differences of spherical aberration 26
ix
4.7 interaction volume between the electron beam and the specimen 27
4.8 Secondary electrons escape from sample areas close to the surface 28
4.9 Diameter of beam 28
4.10 current of condenser lens make differ to spot size 29
4.11 sample of 5 kV 30
4.12 sample of 10 kV 30
4.13 sample of 15 kV 31
4.14 sample of 20 kV 31
4.15 graph for intensity vs voltage for mass 43 amu 32
4.16 composition exist in EDX Spectrum 33
4.17 Spectrum for EDX sample 20 kV 33
x
LIST OF TABLES
Table 1 different kind of SIMS 8