IGBT Designers Manual

Data Sheets
The IGBT devices listed in this Designers Manual represent International Rectifiers IGBT line as of August, 1994. The data presented in this manual supersedes all previous specifications.

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PD - 9.687A

IRGBC20S
INSULATED GATE BIPOLAR TRANSISTOR
Features
Switching-loss rating includes all "tail" losses Optimized for line frequency operation ( to 400 Hz) See Fig. 1 for Current vs. Frequency curve
G E C

Standard Speed IGBT

VCES = 600V VCE(sat) 2.4V

@VGE = 15V, I C = 10A

n-channel
Description
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high-voltage, highcurrent applications.

TO-220AB
Absolute Maximum Ratings
Parameter
VCES IC @ T C = 25C IC @ T C = 100C ICM ILM VGE EARV PD @ T C = 25C PD @ T C = 100C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting torque, 6-32 or M3 screw.

Max.
600 19 10 76 38 20 5.0 60 24 -55 to +150 300 (0.063 in. (1.6mm) from case) 10 lbfin (1.1Nm)

Units
V A

V mJ W

Thermal Resistance
Parameter
RJC RCS RJA Wt Junction-to-Case Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight

Min.

Typ.
0.50 2.0 (0.07)

Max.
2.1 80

Units
C/W g (oz)
Revision 0

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IRGBC20S
Electrical Characteristics @ T J = 25C (unless otherwise specified)
V(BR)CES V(BR)ECS
V(BR)CES/TJ

VCE(on)

Parameter Collector-to-Emitter Breakdown Voltage Emitter-to-Collector Breakdown Voltage Temperature Coeff. of Breakdown Voltage Collector-to-Emitter Saturation Voltage

VGE(th) VGE(th)/TJ gfe ICES IGES

Gate Threshold Voltage Temperature Coeff. of Threshold Voltage Forward Transconductance Zero Gate Voltage Collector Current Gate-to-Emitter Leakage Current

Min. Typ. Max. Units Conditions 600 V VGE = 0V, I C = 250A 20 V VGE = 0V, IC = 1.0A 0.75 V/C VGE = 0V, I C = 1.0mA 1.8 2.4 IC = 10A V GE = 15V 2.4 V IC = 19A See Fig. 2, 5 1.9 IC = 10A, T J = 150C 3.0 5.5 VCE = VGE, IC = 250A -11 mV/C VCE = VGE, IC = 250A 2.0 5.8 S VCE = 100V, I C = 10A 250 A VGE = 0V, V CE = 600V 1000 VGE = 0V, V CE = 600V, T J = 150C 100 nA VGE = 20V

Switching Characteristics @ T J = 25C (unless otherwise specified)

Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets LE Cies Coes Cres Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. Typ. Max. Units Conditions 16 26 IC = 10A 2.3 4.0 nC VCC = 400V See Fig. 8 7.0 12 VGE = 15V 24 TJ = 25C 23 ns IC = 10A, V CC = 480V 820 1200 VGE = 15V, R G = 50 910 1600 Energy losses include "tail" 0.24 3.9 mJ See Fig. 9, 10, 11, 14 4.1 6.0 26 TJ = 150C, 30 ns IC = 10A, V CC = 480V 1100 VGE = 15V, R G = 50 1800 Energy losses include "tail" 7.0 mJ See Fig. 10, 14 7.5 nH Measured 5mm from package 360 VGE = 0V 36 pF VCC = 30V See Fig. 7 5.2 = 1.0MHz

Notes: Repetitive rating; V GE=20V, pulse width limited by max. junction temperature. ( See fig. 13b ) VCC=80%(V CES), VGE=20V, L=10H, R G= 50, ( See fig. 13a ) Repetitive rating; pulse width limited by maximum junction temperature. Pulse width 80s; duty factor 0.1%. Pulse width 5.0s, single shot.

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IRGBC20S
25
For both:

Triangular w ave:

20

LO A D C U R RE NT (A )

D u ty cycle: 50% TJ = 125C T s in k = 9 0C G a te drive a s specified Pow er D issipation = 13W

C lamp voltage: 80% of rated

15
S quare w av e: 60% of rated voltage

10

5
Id e a l d io d e s

0 0.1 1 10 100

f, F re quency (kH z)

Fig. 1 - Typical Load Current vs. Frequency

(For square wave, I=I RMS of fundamental; for triangular wave, I=I PK)

100

100

I C , C o lle ctor-to-E m itter C urre nt (A )

TJ = 25 C TJ = 15 0C
10

I C , C ollecto r-to -E m itter C u rrent (A )

T J = 1 50 C
10

T J = 25 C

1 1

V G E = 15 V 20 s P UL S E W ID TH
10

0.1 5 10

V C C = 1 00 V 5 s P UL S E W IDTH
15 20

V C E , C o llector-to-Em itter V oltage (V)

V G E , G ate -to-E m itter V olta ge (V )

Fig. 2 - Typical Output Characteristics

Fig. 3 - Typical Transfer Characteristics

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IRGBC20S
20

V G E = 15 V

3.0

VG E = 1 5 V 80 s P UL S E W ID TH

16

V C E , C ollector-to-E m itter V oltage (V)

M aximum D C Collector Current (A )

I C = 20 A

2.5

12

2.0

I C = 10 A

1.5

I C = 5.0A

0 25 50 75 100 125 150

1.0 -60 -40 -20 0 20 40 60 80 1 00 120 140 160

T C , C ase Tem perature (C )

TC , C ase Tem perature (C )

Fig. 4 - Maximum Collector Current vs. Case Temperature

Fig. 5 - Collector-to-Emitter Voltage vs. Case Temperature

10

T he rm al R e sp ons e (Z thJ C )

D = 0 .5 0

0 .2 0 0 .1 0 0 .0 5
PD M

0.1

0 .0 2 0 .0 1

t
S IN G L E P U L S E (T H E R M A L R E S P O N S E )
N o te s: 1 . D u ty fa c to r D = t 1 / t 2

1 t2

0.01 0.00001

2 . P e a k TJ = P D M x Z thJ C + T C

0.0001

0.001

0.01

0.1

10

t 1 , R e c ta n gu la r P u ls e D ura tio n (s e c )

Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case

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IRGBC20S
700

600

C, C apacitance (pF)

500

Cies

400

Coes
300

V G E , G ate-to-E m itter V oltag e (V )

V GE = 0V, f = 1MHz C ies = C ge + C gc , Cce SHORTED C res = C gc C oes = C ce + C gc

20

V C E = 48 0V I C = 10 A

16

12

200

Cres
100

0 1 10 100 0 4 8 12 16 20

V C E , C o llector-to-Em itter V oltage (V)

Q g , T o tal G a te C h a rg e (n C )

Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage

Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage

4 .2

4 .0

T o tal S w itc hing Los se s (m J)

VC C VG E TC IC

= 48 0V = 15V = 25 C = 1 0A

100

R G = 50 V GE = 15 V V CC = 4 80 V

I C = 20 A
10

I C = 10A I C = 5.0 A

3 .8

3 .6 20 30 40 50 60

1 -60 -40 -20 0 20 40 60 80 100 120 140 160

R G , G ate R esistance ( )
W

TC , C ase Tem perature (C )

Fig. 9 - Typical Switching Losses vs. Gate Resistance

Fig. 10 - Typical Switching Losses vs. Case Temperature

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IRGBC20S
15

12

I C , C ollector-to-E m itter Current (A )

Total Sw itching Losses (m J)

RG TC V CC VGE

= 50 = 150C = 4 80 V = 15 V

100

VG = 20 V EE G T J = 12 5C

S A FE O P E RA TIN G A RE A
10

0 4 8 12 16 20 24

1 1 10 100 1000

I C , C ollecto r-to-E m itter C urrent (A )

V C E , Collecto r-to-E m itter V oltage (V )

Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current

Fig. 12 - Turn-Off SOA

Refer to Section D for the following: Appendix C: Section D - page D-5 Fig. 13a - Clamped Inductive Load Test Circuit Fig. 13b - Pulsed Collector Current Test Circuit Fig. 14a - Switching Loss Test Circuit Fig. 14b - Switching Loss Waveform Package Outline 1 - JEDEC Outline TO-220AB Section D - page D-12

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