ADVANCED INFORMATION

ADVANCED INFORMATION

2N4401
SMALL SIGNAL TRANSISTORS (NPN)
TO-92
0.181 (4.6) min. 0.492 (12.5) 0.181 (4.6) 0.142 (3.6)

FEATURES
NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. As complementary type, the PNP transistor 2N4403 is recommended. On special request, this transistor is also manufactured in the pin configuration TO-18. This transistor is also available in the SOT-23 case with the type designation MMBT4401

max. 0.022 (0.55) 0.098 (2.5)

MECHANICAL DATA
Case: TO-92 Plastic Package Weight: approx. 0.18g

Dimensions in inches and (millimeters)

MAXIMUM RATINGS AND THERMAL CHARACTERISTICS

Ratings at 25C ambient temperature unless otherwise specified

SYMBOL

VALUE

UNIT

Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Power Dissipation at TA=25C Derate above 25C Power Dissipation at TC=25C Derate above 25C Thermal Resistance, Junction to Ambient Air Thermal Resistance Junction to Case Junction Temperature Storage Temperature Range

VCBO VCEO VEBO IC Ptot

60 40 6.0 600 625 5.0 1.5 12 200 83.3 150 55 to +150

Volts Volts Volts mA mW mW/C W mW/C C/W C/W C C

Ptot RQJA RQJC Tj TS

2/17/99

2N4401
ELECTRICAL CHARACTERISTICS
Ratings at 25C ambient temperature unless otherwise specified SYMBOL MIN. MAX. UNIT

Collector-Base Breakdown Voltage at IC = 0.1 mA, IE = 0 Collector-Emitter Breakdown Voltage(1) at IC = 1 mA, IB = 0 Emitter-Base Breakdown Voltage at IE = 0.1 mA, IC = 0 Collector-Emitter Saturation Voltage(1) at IC = 150 mA, IB = 15 mA at IC = 500 mA, IB = 50 mA Base-Emitter Saturation Voltage(1) at IC = 150 mA, IB = 15 mA at IC = 500 mA, IB = 50 mA Collector Cutoff Current at VEB = 0.4 V, VCE = 35 V Base Cutoff Current at VEB = 0.4 V, VCE = 35 V DC Current Gain at VCE = 1 V, IC = at VCE = 1 V, IC = at VCE = 1 V, IC = at VCE = 1 V, IC = at VCE = 2 V, IC = 0.1 mA 1 mA 10 mA 150 mA(1) 500 mA(1)

V(BR)CBO V(BR)CEO V(BR)EBO VCEsat VCEsat VBEsat VBEsat ICEX IBEV

60 40 6.0 0.75

0.40 0.75 0.95 1.20 100 100

Volts Volts Volts Volts Volts Volts Volts nA nA

hFE hFE hFE hFE hFE hie hre fT CCBO CEBO

20 40 80 100 40 1.0 0.1 10-4 250

300 15 8 10-4 6.5 30

kW MHz pF pF

Input Impedance at VCE = 10 V, IC = 1 mA, f = 1 kHz Voltage Feedback Ratio at VCE = 10 V, IC = 1 mA, f = 1 kHz Current Gain-Bandwidth Product at VCE = 10 V, IC = 20 mA, f = 100 MHz Collector-Base Capacitance at VCB = 5 V, IE=0, f=1.0 MHZ Emitter-Base Capacitance at VEB = 0.5 V, IC=0, f=1.0 MHZ
NOTES (1) Pulse test: Pulse width 300ms - Duty cycle 2%

2N4401
ELECTRICAL CHARACTERISTICS
Ratings at 25C ambient temperature unless otherwise specified SYMBOL MIN. MAX. UNIT

Small Signal Current Gain at VCE = 10 V, IC = 1 mA, f = 1 kHz Output Admittance at VCE = 10 V, IC = 1 mA, f = 1 kHz Delay Time (see fig. 1) at IC = 150 mA, IB1 = 15 mA, VCC=30V, VBE=2.0V Rise Time (see fig. 1) at IC = 150 mA, IB1 = 15 mA, VCC=30V, VBE=2.0V Storage Time (see fig. 2) at IB1 = IB2 = 15 mA, VCC=30V, IC=150mA Fall Time (see fig. 2) at IB1 = IB2 = 15 mA, VCC=30V, IC=150mA

hfe hoe td tr ts tf

40 1.0

500 30 15 20 225 30

mS ns ns ns ns

SWITCHING TIME EQUIVALENT TEST CIRCUIT

FIGURE 1 - TURN-ON TIME FIGURE 2 - TURN-OFF TIME

1.0 to 100 ms, DUTY CYCLE 2% +16 V 0 -2 V < 2 ns 1kW

+30V 200W +16 V 0 C S* < 10 pF Scope rise time < 4ns *Total shunt capacitance of test jig, connectors and oscilloscope -14 V

1.0 to 100 ms, DUTY CYCLE 2%

+30V 200W

1kW < 20 ns -4 V

C S* < 10 pF