AO4409

30V P-Channel MOSFET

General Description
The AO4409 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge. This device is suitable for use as a load switch or in PWM applications.

Product Summary
VDS ID (at VGS=-10V) RDS(ON) (at VGS=-10V) RDS(ON) (at VGS =-4.5V) -30V -15A < 7.5m < 12m

* RoHS and Halogen-Free Compliant

100% UIS Tested 100% Rg Tested

SOIC-8 Top View D D D D Bottom View D

G S S S

G S

Absolute Maximum Ratings TA=25 C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Avalanche Current C Avalanche energy L=0.3mH C TA=25 C Power Dissipation B TA=70 C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead
C

Maximum -30 20 -15 -12.8 -80 30 135 3.1 2 -55 to 150

Units V V A A mJ W C

VGS TA=25 C TA=70 C ID IDM IAS, IAR EAS, EAR PD TJ, TSTG

Symbol
t 10s Steady-State Steady-State

RJA RJL

Typ 31 59 16

Max 40 75 24

Units C/W C/W C/W

Rev.8.0: July 2013

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Electrical Characteristics (TJ=25 C unless otherwise noted) Symbol Parameter Conditions ID=-250A, VGS=0V VDS=-30V, VGS=0V C TJ=55 VDS=0V, VGS= 20V VDS=VGS ID=-250A VGS=-10V, VDS=-5V VGS=-10V, ID=-15A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=-4.5V, ID=-10A Forward Transconductance Diode Forward Voltage VDS=-5V, ID=-15A IS=-1A,VGS=0V 35 TJ=125 C -1.4 -80 6.2 8.2 9.5 50 -0.71 -1 -5 5270 VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 945 745 2 100 VGS=-10V, VDS=-15V, ID=-15A 51.5 14.5 23 14 VGS=-10V, VDS=-15V, RL=1, RGEN=3 IF=-15A, dI/dt=100A/s 16.5 76.5 37.5 36.7 28 45 3 120 6400 7.5 11.5 12 -1.9 Min -30 -5 -25 100 -2.7 Typ Max Units V A nA V A m m S V A pF pF pF nC nC nC nC ns ns ns ns ns nC

STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current

Maximum Body-Diode Continuous Current

DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance

SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=-15A, dI/dt=100A/s

A. The value of RJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150C, using 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150C. Ratings are based on low frequency and duty cycles to keep initialTJ=25C. D. The RJA is the sum of the thermal impedence from junction to lead RJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150C. The SOA curve provides a single pulse rating.

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Rev.8.0: July 2013

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TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

60 50 40 -ID (A) 30 20 10 VGS=-3V 0 0 1 2 3 4 5 -VDS (Volts) Fig 1: On-Region Characteristics (Note E) 12 10 RDS(ON) (m ) 8 6 VGS=-10V 4 2 0 15 20 25 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 5 10 Normalized On-Resistance VGS=-4.5V 0 0 0.5 1 1.5 2 2.5 3 3.5 4 -VGS(Volts) Figure 2: Transfer Characteristics (Note E) -4V -4.5V -6V -10V -ID(A) -3.5V 40 30 20 10 125C 25C 60 VDS=-5V 50

1.6 ID=-15A 1.4 VGS=-10V

1.2

VGS

17 5 2 10 =-4.5V

0.8 0 25 50 75 100 125 150 175

0 Temperature ( C) Figure 4: On-Resistance vs. Junction Temperature 18 (Note E)

20 ID=-15A

1.0E+02 1.0E+01

15 125 RDS(ON) (m ) 10 25 5 -IS (A)

1.0E+00 1.0E-01 1.0E-02 25 1.0E-03 1.0E-04 125

40

0 2 6 8 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) 4

1.0E-05 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -VSD (Volts) Figure 6: Body-Diode Characteristics (Note E)

Rev.8.0: July 2013

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AO4409

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

10 VDS=-15V ID=-15A 8 6000 Capacitance (pF) -VGS (Volts) 6 5000 4000 3000 2000 2 1000 Crss 0 0 20 40 60 80 100 Qg (nC) Figure 7: Gate-Charge Characteristics 120 0 0 5 10 15 20 25 -VDS (Volts) Figure 8: Capacitance Characteristics 30 Coss Ciss 8000 7000

1000.0 100.0

10000 TA=25C

100s 1ms 10ms

Power (W)

1000

-ID (Amps)

10.0 1.0 0.1 0.0

RDS(ON) limited

100

TJ(Max)=150C TA=25C

10

10s DC
1 0.00001 0.001 0.1 10 1000

0.01

0.1

1 -VDS (Volts)

10

100 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F)

Figure 9: Maximum Forward Biased Safe Operating Area (Note F)

10 Z JA Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZJA.RJA 1 RJA=75C/W

In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

0.1

0.01 Single Pulse

PD Ton

T 10 100 1000

0.001 0.00001 0.0001 0.001 0.01 0.1 1 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)

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Gate Charge Test Circuit & Waveform

Vgs Qg -10V
VDC

VDC

DUT Vgs Ig

Resistive Switching Test Circuit & Waveforms

RL Vds Vgs Vgs Rg DUT
VDC

Vgs Vds

Unclamped Inductive Switching (UIS) Test Circuit & Waveforms

L Vds Id Vgs Rg DUT Vgs Vgs Vgs
VDC

Diode Recovery Test Circuit & Waveforms

Vds + DUT Vgs
t rr

Vds Isd Vgs Ig

VDC

+ Vdd -Vds

Rev.8.0: July 2013

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+
Charge
ton td(on) tr t d(off) toff tf

Vds

Qgs

Qgd

Vdd

90%

10%

E AR= 1/2 LIAR

Vds BVDSS Vdd Id I AR

Q rr = - Idt

-Isd

-I F

dI/dt -I RM Vdd

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