Scribd Logo
Upload

Welcome to Scribd!

  • Nte 377

    Uploaded by

    Leosonido Reyes
    40 views2 pages
    The NTE377 (NPN) and NTE378 (PNP) are silicon complementary transistors in a TO220 type package. They are designed for general purpose power amplification and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers.

    Original Description:

    Original Title

    nte377

    Copyright

    © Attribution Non-Commercial (BY-NC)

    Available Formats

    PDF, TXT or read online from Scribd

    Did you find this document useful?

    Is this content inappropriate?

    Report this Document
    The NTE377 (NPN) and NTE378 (PNP) are silicon complementary transistors in a TO220 type package. They are designed for general purpose power amplification and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers.

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as PDF, TXT or read online from Scribd
    Flag for inappropriate content
    40 views2 pages

    Nte 377

    Uploaded by

    Leosonido Reyes
    The NTE377 (NPN) and NTE378 (PNP) are silicon complementary transistors in a TO220 type package. They are designed for general purpose power amplification and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers.

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as PDF, TXT or read online from Scribd
    Flag for inappropriate content
    of 2

    NTE377 (NPN) & NTE378 (PNP) Silicon Complementary Transistors Power Amp Driver, Output, Switch

    Description: The NTE377 (NPN) and NTE378 (PNP) are silicon complementary transistors in a TO220 type package designed for general purpose power amplification and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features: D Low CollectorEmitter Saturation Voltage: VCE(sat) = 1V Max @ 8A D Fast Switching Speeds D Complementary Pairs Simplifies Designs Absolute Maximum Ratings: CollectorEmitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V EmitterBase Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20A Total Power Dissipation, PD TC = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50W TA = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.67W Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 to +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 to +150C Thermal Resistance, JunctiontoCase, RJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.5C/W Thermal Resistance, JunctiontoAmbient, RJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75C/W Maximum Lead Temperature (During Soldering, 1/8 from case, 5sec), TL . . . . . . . . . . . . . . +275C Note 1. Pulse Width 6ms, Duty Cycle 50%.

    Electrical Characteristics: (TC = +25C unless otherwise specified)


    Parameter OFF Characteristics Collector Cutoff Current Emitter Cutoff Current ON Characteristics DC Current Gain hFE VCE(sat) VBE(sat) Ccb VCE = 1V, IC = 2A, TJ = +25C VCE = 1V, IC = 4A, TJ = +25C CollectorEmitter Saturation Voltage BaseEmitter Saturation Voltage Dynamic Characteristics Collector Capacitance NTE377 NTE378 Gain Bandwidth Product NTE377 NTE378 Switching Times Delay and Rise Time NTE377 NTE378 Storage Time Fall Time NTE377 NTE378 ts tf IC = 5A, IB1 = IB2 = 500mA td + tr IC = 5A, IB1 = 500mA 300 135 500 140 100 ns ns ns ns ns fT IC = 500mA, VCE = 10V, f = 20MHz VCB = 10V, ftest = 1MHz 130 230 50 40 pF pF MHz MHz IC = 8A, IB = 400mA IC = 8A, Ib = 800mA 60 40 1.0 1.5 V V ICES IEBO VCE = 80V, VBE = 0 VEB = 5V 10 100 A A Symbol Test Conditions Min Typ Max Unit

    .420 (10.67) Max .110 (2.79)

    .147 (3.75) Dia Max

    .500 (12.7) Max

    .250 (6.35) Max .500 (12.7) Min .070 (1.78) Max Base .100 (2.54) Emitter Collector/Tab

    You might also like