4-1

Experiment 4 Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET)

I. Objective To study the dc characteristics of an n-channel metal-oxide-semiconductor fieldeffect transistor (MOSFET).

II.

Theory Source Gate Drain

Z SiO2

n+ L

n+ substrate

Fig. 4.1 Cross-section of a MOSFET device structure The MOSFET is best known for its ability to provide signal amplification similar to the BJT and for its use in high-density digital logic circuits and memories. The structure of an n-channel MOSFET is shown in Fig. 4.1. The active part of the device is between the two n-regions (shown as the drain and the source). During device operation, the condition of the active region or the channel is controlled by the gate voltage and it is possible to deplete the channel or create an inversion layer of mobile charges underneath the oxide that electrically connects the source and drain. Some MOSFETs have an inverted channel (i.e., they are ON) even without any gate bias and these are called depletion mode devices. Otherwise, they are called enhancement mode devices (see Fig. 4.2 for the different circuit symbols).

4-2 D D D D

G S n-channel depletion

G S p-channel depletion

G S n-channel enhancement

G S p-channel enhancement

Fig. 4.2 MOSFET circuit symbols For an n-channel MOSFET, after an inverted layer has been formed, current can flow between the drain and the source under bias. When VDS is small, the output current ID between the drain and the source is given by: ID Cox(Z/L) (VGS - VT)VDS (1)

where VT is the threshold voltage (the gate voltage above which the conducting channel is formed), is the electron mobility, Cox is the oxide capacitance, and Z/L is the width of the channel divided by its length. Eqn. (1) defines the linear region of operation for the MOSFET. When VDS is large, the channel becomes pinched-off near the drain and in this case the current is approximately constant: IDsat Cox(Z/2L) (VGS -VT)2 , VDS > VGS VT = VDsat (2)

This is the saturation region of operation for the MOSFET. Fig.4.3 shows schematic I-V characteristics for a depletion mode device (the linear region is not shown). ID VGS = +2V VGS = +1V VGS = 0V VGS = -1V

VDS Fig. 4.3 ID vs. VDS for different values of VGS for an n-channel depletion mode MOSFET

4-3 It is useful to define transconductance gm: MOSFET small-signal conductance gD and

gD = ID / VDS , VGS = constant = Cox(Z/L) (VGS - VT) ; in linear region (small VDS) gm = ID / VGS , VDS = constant = Cox(Z/L) VDS ; VDS < VDsat = Cox(Z/L) (VGS - VT) ; VDS > VDsat III. Experiment To measure the parameters of an n-channel MOSFET. (3)

Procedure: NOTE: MOSFETs are very static sensitive. First construct your circuit and then insert the MOSFETs. Use caution while handling any static sensitive device. Part A: Determination of depletion or enhancement mode. To allow the device to safely switch inductive loads (from on to off and vice versa), an internal reverse-current protection diode is often added between the source and the drain of discrete MOSFET devices (see Fig. 4.4). With this type of device, a negative VDD (less than -0.7 V) may give rise to a large ID (mainly in the form of a substrate current). For our measurements, we only consider the cases when VDD is positive. D

G G D S S Fig. 4.4 Typical MOSFET equivalent circuit showing reverse current protection diode and output pins for the MOSFET

4-4 1) Place the n-channel MOSFET in the circuit shown in Fig. 4.5. Short the gateto-source terminal and measure ID and VDS for small positive values of VDD (less than 1 V) in increments of 0.1 V. Determine the conductance. 1 k
+ VDD _
D

- VGG + V
S

Fig. 4.5 MOSFET test circuit Part B: Determination of conductance, transconductance, and threshold voltage. 2) Using the same circuit as in Fig. 4.5, set VDD to a few volts and with the source grounded, vary (either positively or negatively) the value of VGS until the channel is turned on. Increase VDD until ID does not continue to increase rapidly with drain voltage. Now reduce the value of VGS until ID decreases by 10%; 25%; 50%; 90%; and 99%. Record the respective values of VGS and estimate VT. At the values of VGS when ID is reduced by 10%, 25%, 50% and 90% respectively, measure ID for different values of VDS (vary VDS starting from about 10 mV). Use finer increments when you are in the lower voltage range.

3)

Part C: Measurement of the sub-threshold conduction. 4) Keep VDS = +1 V in the circuit and measure ID for different values of VGS from 0 V to above threshold.

4-5 ELEC 320: Experiment 4: MOSFET In-class Report (to be handed in after you complete the experiment) Name: Signature: Lab Section: Date:

Fill in the following: a) Is your MOSFET an enhancement mode device or a depletion mode device? _____________ . Estimated value of VT is ________ V. Estimated channel resistance (VGS = 0) is ____________ .

b) c)

4-6 IV. Analysis and Discussion 1. 2. Based on the channel conductance you measured at VGS = 0, explain why your MOSFET is either depletion mode or enhancement mode. Produce plots of ID versus VDS (on the same graph) and indicate the linear and the saturation regions. From an analysis of the linear region, estimate the values of gD and VT using Eqns. (1) and (3). Compare VT to the value estimated in step 2) of the experiment. Use your data to plot ID versus VGS for constant VDS in saturation. Compare this to Eqn. (2) and estimate the value of VT. Compare this value to the threshold voltages found above and discuss any differences. Compute gm in the saturation region using Eqn. (3). Repeat the calculation of gm in the linear region and compare to gmsat. MOSFET conduction in the sub-threshold region, (i.e. VGS < VT) is very important in many practical applications. In this mode of operation, the output current ID can be approximated by: qVGS I D exp kT Plot ln(ID) versus VGS and determine the inverse slope of the straight-line portion on the semi-log plot in mV/decade of drain current. This is called the MOSFET subthreshold slope S.

3.

4.