SYSTEM FOR RESISTANCE UNIT TRANSFER FROM 10 k UP TO 100 T WITH NEW

DESIGN OF HAMON TRANSFERS

Michal Lisowski and Krystian Krawczyk

Institute of Electrical Engineering Fundamentals
Wybrzeze Wyspianskiego 27, 50-370 Wroclaw, Poland
(e-mail: michal.lisowski@pwr.wroc.pl and krystian.krawczyk@pwr.wroc.pl)
The scheme of a new system for transferring
the resistance unit from the primary resistance
standard QHR (Quantum Hall Resistance) to high
resistance resistors with the use of high resistance
Hamon transfers is shown in Figure 1. In the new
system a resistance value is transferred directly
from one transfer to another.





































Fig. 1. The new system for resistance unit transfer from the QHR
to secondary standards from 10 k up to 100 T.
In such way, intermediary standard resistors can
be omitted together with additional uncertainty
sources from those resistors. Measurements are
done using substitution and transposition methods
which eliminate the measurements errors,
therefore only the resolution and sensitivity errors
have to be taken into account.
The Hamon transfer consists of 10 precise
resistors with the same nominal values, which can
be connected in series or in parallel or series-
parallel. The ratio of series to parallel
arrangement of the transfer resistors is given with

where

is relative error of the resistance ratio R
S
/R
R
, R
i

relative error of value of i-resistor, - mean
value of R
i
errors. If during measurements the
resistance values of resistors R
i
remain constant
then the value of error o
S/R
depend only on the
tolerance of resistance values of the resistors. For
101001000 k transfer made with 100 k
resistors with the tolerance of 610
-6
, the value
of this error is 110
-11
, and for 110100 T
transfer with 10 T resistors with the tolerance of
1,5 %, the error value is of 110
-5
.
Resistance ratio of transfer in series
arrangement R
s
to series-parallel arrangement R
SR

is given with

where is the difference of relative
error of resistance of the resistor outside the
series-parallel arrangement and error of resistance
of the transfer in series-parallel arrangement,

S/SR
= 0,1o is the error of R
S
/R
SR
ratio. Therefore,
the uncertainty of this ratio is dependent on the
uncertainty of determination of o, that is, on the
resolution of measuring equipment and scattering
of measurements.
The accuracy of the high resistance Hamon
transfers is mainly limited by the insulation
leakage to the ground. The series arrangement of
transfer resistors, including insulation leakage,
should be considered as a chain of four-terminal
networks. If resistances of particular resistors are
the same and the insulation resistances of the
connectors are also the same. There are 10
identical symmetrical four-terminal networks of
H type. Therefore according to the four-terminal
network theory, it is possible to obtain the
longitudinal resistance of the four-terminal
network. To minimize uncertainty from insulation
leakage double insulation should be used (Tab. I).
TABLE I. Relative errors of transfers resistance ratio









Hamon transfers 101001000 k and 110
100 M (Fig. 2) were built of 100 k and 10 M
ultra precision resistors with the tolerance of
0.005 %. Insulations of the binding posts were
made with PE (polyethylene) with volume
resistivity of the order of 10
17
cm.










Fig. 2. Transfer with copper bars for parallel configuration
In 0.1110 G, 101001000 G and 110
100 T transfers, the double insulation of Triax
type connectors was used instead of binding posts
(Fig. 3). Copper bars for the configuration change
were replaced with shunts constructed with Triax
connectors.









Fig. 3. Transfer with double insulation with shielded shunts in
parallel configuration
For minimization of the influence of
temperature variation and external electrostatic
interferences, resistors are placed inside
thermostated metal boxes. Environment humidity
does not affect the resistance value of the resistors
due to hermetically sealed casing.
The Peltier elements were powered with a
pulse temperature controller, controlled with a
Pt-100 sensor, placed inside the Hamon transfer
box (Fig. 4). The temperature controller was
programmed with a computer via USB.

















Fig. 4. Stabilization of Hamon transfer temperature with Peltier
element and temperature controller: 1) resistors, 2) aluminum box,
3) Peltier elements, 4) thermal insulation, 5) radiators, 6)
temperature controller, 7) temperature sensor
This method stabilizes the temperature inside the
Hamon transfer with instability of the order of
0.01 C (Fig. 5).







Fig. 5. Temperature characteristic for termosted transfer
The value of resistance for high value resistors
is dependent on voltage. If during measurements
the value of voltage will be constant for each
resistor in the transfer despite configuration
change, the VCR will affect the value of
resistance only due to instability of voltage. In
this case, the influence of VCR on the accuracy of
transfer is very low and the transfers can be very
accurate (Tab. II).
TABLE II. Transfers resistance ratio values with uncertainty












A transfer of the resistance unit from one
transfer to another requires lowering of voltage
value by 10 times. A change of voltage value
causes the change of resistance value of the
transfer resistors. To minimize the influence of
those changes on the accuracy of the resistance
unit transfer system, voltage corrections were
introduced. The voltage corrections could not be
determined with a sufficiently high accuracy,
therefore they have significant contribution to
measurement uncertainty. This is clearly visible in
the results of transfer calibration shown in
Table III.
TABLE III. Results of resistance transfers calibration






















The work was financed with the means of statutory research
QHR Standard
12906,404 O; 6453,202 O
Cryogenic Current
Comparator
100 O
Cryogenic Current
Comparator
10 kO
100 kO
1 MO
10 MO
100 MO
1 GO
10 GO
100 GO
1 TO
10 TO
100 TO
6
5
0
0

G
u
i
l
d
l
i
n
e

t
e
r
a
o
h
m
m
e
t
e
r
6
0
0
0
B

M
e
a
s
u
r
e
m
e
n
t


I
n
t
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r
n
a
t
i
o
n
a
l

b
r
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S
e
c
o
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d
a
r
y

r
e
s
i
s
t
a
n
c
e

s
t
a
n
d
a
r
d
s
Transfer
10-100-1000 kO
10 kO
100 kO
1 MO
Transfer
1-10-100 MO
1 MO
10 MO
100 MO
Transfer
0,1-1-10 GO
100 MO
1 GO
10 GO
Transfer
10-100-1000 GO
10 GO
100 GO
1 TO
Transfer
1-10-100 TO
1 TO
10 TO
100 TO
6
7
2
4
3
5
1
5
3
Transfer
Relative error k
S/P

for insulation
Relative error k
SP/P

for insulation
single double single double
101001000 k -9.610
-11
- -5.510
-11
-
110100 M -1.710
-8
- -1.310
-9
-
0.1110 G - -1.710
-8
- -1.310
-9

101001000 G - -1.710
-6
- -1.310
-7

110100 T - -1.710
-4
- -1.310
-5

Transfer Ratio
Standard
uncertainty
(101001000) k
10.0000011 1.310
-8

100 1.210
-8

(110100) M
10.0000011 7.010
-8

100 6.310
-8

(0.1110) G
10.000023 3.310
-7

100 1.410
-7

(101001000) G
10.000037 2.010
-6

100 1.710
-6

(110100) T
10.00048 6.610
-5

100 7.110
-5

Transfer
configuration
Voltage
[V]
Resistance
value
Standard
uncertainty
101001000 k
series-parallel
15 100.002618 k 2.110
-8

101001000 k
series
50 1.00002618 M 2.010
-8

110100 M
series-parallel
15 10.0014 M 9.010
-5

110100 M
series
50 100.014 M 9.010
-5

0.1110 G
series-parallel
15 1.0000 G 1.310
-4

0.1110 G
series
100 10.000 G 1.310
-4

101001000 G
series-parallel
300 99.899 G 1.310
-4

101001000 G
series
1000 0.9990 T 1.310
-4

110100 T
series-parallel
300 10.120 T 3.910
-4

110100 T
series
1000 101.20 T 3.810
-4

22,90
22,95
23,00
23,05
0 100 200 300 400 500 600
T
e
m
p
e
r
a
t u
r
e
[

C
]

Time [s]
( ), 1 100
/ R S
R
S
R
R
o = ( )

=
=
10
1
2
/
10
1
i
i R S
R R o o o
R o
( ) ( ), 1 , 0 1 10 1 100
'
/
o o ~ =
SR S
SR
S
R
R
SR
R R o o o =
1
'