11

(Saturated) MOSFET Small-Signal Model

I

Transconductance
The small-signal drain current due to vgs is therefore given by id = gm vgs.

Concept: find an equivalent circuit which interrelates the incremental changes in iD, vGS, vDS, etc. for the MOSFET in saturation

vGS = VGS + vgs , iD = ID + id -- we want to find id = (?) vgs

D

iD = ID + id
+

We have the functional dependence of the total drain current in saturation: iD = n Cox (W/2L) (vGS - VTn ) (1 + nvDS) = iD(vGS, vDS)
2

G
+

vgs

B S

VDS = 4 V

_ +

Solution: do a Taylor expansion around the DC operating point (also called the quiescent point or Q point) defined by the DC voltages Q(VGS, VDS): i D
GS Q

VGS = 3 V_

iD = ID + v

1 iD ( v gs ) + -2 v2

600

( v gs ) +
Q iD

500 400

GS

id Q gm = id / vgs

vGS = VGS + vgs vGS = VGS = 3 V

If the small-signal voltage is really small, then we can neglect all everything past the linear term -i D
GS Q

(A) 300 200 100

iD = ID + v

( v gs ) = I D + g m v gs

6 VDS (V)

where the partial derivative is defined as the transconductance, gm.

EE 105 Fall 1998 Lecture 11

EE 105 Fall 1998 Lecture 11

Another View of gm
* Plot the drain current as a function of the gate-source voltage, so that the slope can be identified with the transconductance:
I

Transconductance (cont.)
Evaluating the partial derivative:

W - ( V V Tn ) ( 1 + n V DS ) g m = n C ox ---L GS
D G
+

iD = ID + id
+

vgs

B S

VDS = 4 V

In order to find a simple expression that highlights the dependence of gm on the DC drain current, we neglect the (usually) small error in writing:

_ +

VGS = 3 V_

gm =
600 500 iD 400 id Q iD(vGS, VDS = 4 V)

2ID W 2 n C ox ---- I = ------------------------ L D V GS V Tn

For typical values (W/L) = 10, ID = 100 A, and nCox = 50 AV-2 we find that
gm = id / vgs

(A) 300 200 100 3 1 2 vGS = VGS = 3 V 6 vGS (V) 4 5 vGS = VGS + vgs

gm = 320 AV-1 = 0.32 mS

EE 105 Fall 1998 Lecture 11

EE 105 Fall 1998 Lecture 11

(Partial) Small-Signal Circuit Model

I

Output Conductance/Resistance
I

How do we make a circuit which expresses id = gm vgs ? Since the current is not across its controlling voltage, we need a voltage-controlled current source:

We can also find the change in drain current due to an increment in the drainsource voltage: i D 2 W - ( V V Tn ) n n I D g o = ----------- = n C ox ----2 L GS v
DS Q

gate +

id
drain

The output resistance is the inverse of the output conductance

vgs
_ source _

gmvgs 1 1 r o = ---- = ----------n ID go

The (partial) small-signal circuit model with ro added looks like:

id = gm vgs + (1/ro)vds
gate + drain

vgs
_ source

gmvgs

id ro

vds
_

EE 105 Fall 1998 Lecture 11

EE 105 Fall 1998 Lecture 11

MOSFET Capacitances in Saturation

fringe electric field lines source gate drain

n+ Csb

,,
qN (vGS) overlap LD overlap LD

Complete Small-Signal Model

I

n+

All these capacitances are patched onto the small-signal circuit schematic containing gm and ro ... gmb is open-circuited for EECS 105 since vbs = 0 V.

,, ,,

In saturation, the gate-source capacitance contains two terms, one due to the channel charges dependence on vGS [(2/3)WLCox] and one due to the overlap of gate and source (WCov, where Cov is the overlap capacitance in fF per m of gate width) 2 C gs = -- WLC ox + WC ov 3 In addition, there is the small but very important gate-drain capacitance (just the overlap capacitance Cgd = Cov) There are depletion capacitances between the drain and bulk (Cdb) and between source and bulk (Csb). Finally, the extension of the gate over the field oxide leads to a small gate-bulk capacitance Cgb.

,, ,,,

Cdb

depletion region Cgd id drain Cgs Cgb gmvgs gmbvbs ro

gate + vgs _ source _ vbs + bulk

Csb Cdb

EE 105 Fall 1998 Lecture 11

EE 105 Fall 1998 Lecture 11

p-channel MOSFETs
I I

p-channel MOSFET Models

I

Structure is complementary to the n-channel MOSFET

In a CMOS technology, one or the other type of MOSFET is built into a well -- a deep diffused region -- so that there are electrically isolated bulk regions in the same substrate

(a)

common bulk contact for all n-channel MOSFETs (to ground or to the supply)

p+

(b)

p-type substrate

,
, ,
 
 , 

, ,
n-channel MOSFET p-channel MOSFET isolated bulk contact with p-channel MOSFET shorted to source n+ source n+ drain p+ drain p+ source n well

DC drain current in the three operating regions: -ID > 0

ID = 0 A I D = p C ox ( W L )[ VSG + V Tp ( V SD 2 ) ] ( 1 + p V SD ) VSD I D = p C ox ( W ( 2 L ) ) ( V SG + V T p ) ( 1 + p VSD )

2

( V SG V T ) ( V SG V Tp, VSD VSG + V Tp ) ( V SG V Tp, VSD VSG + V Tp )

,,,,, ,,,,,, , , ,,,,, ,, , ,, , , , ,,,,,, ,,, ,,,,,,,,,, ,, , ,,,,,,, , ,,,,,, ,, , ,,,,

A

The threshold voltage with backgate effect is given by: V Tp = V TOp p ( ( V SB + 2 n ) 2 n )

Numerical values: pCox is a measured parameter. Typical value: pCox = 25 AV-2 0.1 mV p ------------------------L VTp = -0.7 to -1.0 V, which should be approximately -VTn for a well-controlled CMOS process
1

,,, ,, , , ,, , , ,, ,,, ,, ,,, ,, ,,, , ,, ,

n+
EE 105 Fall 1998 Lecture 11 EE 105 Fall 1998 Lecture 11

p-channel MOSFET small-signal model

I

the source is the highest potential and is located at the top of the schematic

source

vsg vsb _ gate

Cgs Cgd

gmvsg

gmbvsb

ro id drain

Cgb _ bulk

Csb Cdb

EE 105 Fall 1998 Lecture 11