Neural

Portable Solar Desalination System
A Senior Project
Presented to
The Faculty of the Electrical Engineering Department

California Polytechnic State University, San Luis Obispo

In Partial Fulfillment
Of the Requirements for the Degree
Bachelor of Science

By

Genaro Sanchez, Alan Galarza, Erick Del Real

J une, 2011

2011, Genaro Sanchez, Alan Galarza, Erick Del Real

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TABLE OF CONTENTS
Section pages

Acknowleugments7

Abstiact............................8

Intiouuction.............................................9

Backgiounu...1u

Requiiements................................12

Besign.........................14

Constiuction anu Testing ........S4

Conclusion anu Recommenuations........7u

Bibliogiaphy..72

Appendices

Pait List anu Cost...7S

Page 4 of 79

LIST OF TABLES AND FIGURES
Tables Page

1. Table 41: 0BA2uSS Component Specification ...17

2. Table 42: Thin Coil Inuuctance anu Resistances at Biffeient Fiequencies.........................2u

S. Table 43: Thick Coil Inuuctance anu Resistances at Biffeient Fiequencies.......................21

4. Table 51: Inclination voltages anu cuiients uata......S6

S. Table 52: Iv chaiacteiistics uata...S8
6. Table 53: Compaiison of the nominal to the measuieu values....S9
7. Table 54: 0BA2uSS 0utput voltages (Loau 0ne).....46

8. Table 55: 0BA2uSS 0utput voltages (Loau Two).....49

9. Table 56: 0BA2uSS 0utput voltages (Loau Thiee).....S2

Figures

1. Figure 31: Simplifieu Block Biagiam..................................................................................................12

2. Figure 41: Full schematic of the BBiiuge inveitei with the thin inuuctoi.14
S. Figure 42: 0BA2uSS IC anu its pin outs.....................................1S

4. Figure 43: R
0SC
anu C
0SC
connections to the chip..........................................................................16

S. Figure 44: Thin anu thick woik coils..18

6. Figure 45: Plot of the extiapolateu inuuctance of the thin coil............................22
7. Figure 46: Plot of the extiapolateu inuuctance of the thick coil........22
8. Figure 47: Plot of the extiapolateu iesistance of the thin coil........2S
9. Figure 48: Plot of the extiapolateu iesistance of the thick coil..2S
1u. Figure 49: Cuiient thiough the thick coil..24
11. Figure 410: Cuiient thiough the thin coil.2S
12. Figure 411: Full schematic of the BBiiuge inveitei with the thin inuuctoi...27
Page 5 of 79

1S. Figure 412: Boue plot of the thin coil......28
14. Figure 413: LTspice simulation of the cuiient flowing thiough the thin inuuctoi.29
1S. Figure 414: Full schematic of the BBiiuge inveitei with the thick inuuctoi....Su
16. Figure 415: Boue plot of the thick coil....Su
17. Figure 416: LTspice simulation of the cuiient flowing thiough the thick inuuctoi...S1
18 Figure 417: Conceptual image of a vapoi uistillation systemS2
19. Figure 51: Image of solai panel to be useu foi pioject..S4
2u. Figure 52: Shows the iatings of the BP solai panels..SS
21. Figure 53: 0pen ciicuit voltage vs. panel inclination.S6
22. Figure 54: Shoit ciicuit cuiient vs. panel inclinationS7

2S. Figure 55: Plot of the cuiient vs. the voltage of the panel..S9
24. Figure 56: Image of the Bbiiuge inveitei....4u
2S. Figure 57: 0nloaueu 0BA2uSS output signal pin 1S (v
uBL
Noloau 0ne).....41
26. Figure 58: 0nloaueu 0BA2uSS output signal pin 28 (v
uBR
Noloau 0ne).42
27. Figure 59: 0nloaueu 0BA2uSS output signal pin 2u (v
uLL
Noloau 0ne)......4S
28. Figure 510: 0nloaueu 0BA2uSS output signal pin 2S (v
uLR
Noloau 0ne)..4S
29. Figure 511: Loaueu 0BA2uSS output signal pin 1S (v
uBL
Loau 0ne)..4S
Su. Figure 512: Loaueu 0BA2uSS output signal pin 28 (v
uBR
Loau 0ne)..4S
S1. Figure 513: Loaueu 0BA2uSS output signal pin 2u (v
uLL
Loau 0ne)..46

S2. Figure 514: Loaueu 0BA2uSS output signal pin 2S (v
uLR
Loau 0ne)..46

SS. Figure 515: Cuiient acioss 1uuu loau.47

uBL
Loau Two).....48

SS. Figure 517: Loaueu 0BA2uSS output signal pin 28 (v
uBR
Loau Two).48

Page 6 of 79

S6. Figure 518: Loaueu 0BA2uSS output signal pin 2u (v
uLL
Loau Two).49

uLR
Loau Two).49

S8. Figure 520: Cuiient acioss 12u loauSu

uBL
Loau Thiee).S1

4u. Figure 522: Loaueu 0BA2uSS output signal pin 28 (v
uBR
Loau Thiee).S1

41. Figure 523: Loaueu 0BA2uSS output signal pin 2u (v
uLL
Loau Thiee)..S2

42. Figure 524: Loaueu 0BA2uSS output signal pin 2S (v
uLR
Loau Thiee)..S2

4S. Figure 525: Cuiient acioss 1u.2 loau...SS

44. Figure 526: 1u.2 iesistive loau. Capable of uissipating SuuW..SS

4S. Figure 527: Ciicuit foi calculation of inuuctance at 2uu KBz...SS
46. Figure 528: Ciicuit foi calculation of capacitance at 2uu KBz.....S7
47. Figure 529: Capacitoi bank configuiation.......S8

48. Figure 530: 0ui thin woik coil in paiallel with the capacitoi bank. ...S9
49. Figure 531: Fully loaueu Bbiiuge inveitei........6u
Su. Figure 532: Cuiient thiough woik coil at 192 KBz....6u
S1. Figure 533: voltage seen acioss loau......62
S2. Figure 534: Stanuing woouen pole with feet.. ......6S
SS. Figure 535: Bisassembleu heat exchange chambei.. ....64

S4. Figure 536: Insiueview of cooling chambei......6S
SS. Figure 537: Siue view of completeu heat exchangei.. ......66
S6. Figure 5 38: Integiation of heat exchangei anu watei containei...68
S7. Figure 539: Full wateipuiifying system......69

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ACKNOWLEDGEMENTS

We woulu like to thank eveiyone who has helpeu us make oui senioi pioject possible.
Fiist, we woulu like to thank oui auvisei Bi. Taufik who gave us the iuea foi the topic of the
pioject. Bi. Taufik has taken a lot of his time anu patience to answei questions, help us look
foi paits anu motivate us to keep looking foiwaiu. In auuition, we woulu also like to thank
Bi. Piouanov foi helping with some of the uesign iueas although we uiu not use them. We
woulu like to thank Bi. Bale Bolan as well foi helping us inteipiet the contiolleis
uatasheet. Also, the company Ameiitheim that took time fiom theii uay to leau us in the
iight uiiection anu foi answeiing emails, phone calls, questions about inuuctive heating.
Finally, we woulu like to thank the Electiical Engineeiing Bepaitment foi allowing us to use
the facilities anu the equipment neeueu to woik on the pioject. Thanks again eveiyone foi
helping us to make oui senioi pioject possible.

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ABSTRACT

Clean watei anu ieliable eneigy can be uifficult to obtain in iemote locations such as
ueseit villages, secluueu islanus, anu othei places wheie no fiesh watei can be founu. The
piimaiy goal foi this pioject is auuiess these pioblems by implementing a poitable
uesalinization plant system that is to be poweieu by solai eneigy Pv system as the main
eneigy souice.

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I. INTRODUCTION

Watei is of a gieat significance foi people since it is useu foi uiinking anu in foou. The
human oiganism must ieceive a ceitain amount of watei eveiy uay. 0theiwise, if an
oiganism uoes not obtain the iequiieu amount of watei foi seveial uays, it uies. It is
obvious that the watei consumeu by the human oiganism shoulu be puie. Watei that
contains any haimful bacteiia oi chemicals may cause vaiious uiseases of an oiganism oi
even ueath. Baving in minu that 1 % of the woilus fiesh watei is ieauily accessible foi
humans. Accoiuing to the Woilu Bealth 0iganization, Eveiy 1S seconus, a chilu uies fiom
a wateiboine uisease 4,Suu chiluien uie eveiy uay because they uo not have access to
clean uiinking watei. Each uay, in ueveloping countiies people have to walk long uistances
to seek clean watei. 0ften times, this watei is contaminateu. While we Ameiicans use 8u
1uu gallons of watei uaily, people fiom Afiica use about five gallons |1j.
Thiough this pioject, we exploie the possibilities of how to help people in
unueiuevelopeu countiies to obtain fiesh uiinking watei in a simple, poitable, anu
affoiuable way. In auuition, this pioject will not only benefit people in the secluueu aieas
but it will also be useful when a natuial uisastei occuis anu the basic seivices like watei
aie inteiiupteu. The system is to be poitable anu easy to opeiate; that is, no complex steps
will be iequiieu to opeiate. Bence, just a few of simple steps anu the system will uo the
iest.

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II. BACKGROUND

The supply of eneigy anu clean watei to iemote locations, such as ueseit facilities,
faiming opeiations, iesoits, anu small villages in the ueveloping woilu can be logistically
complex anu expensive. Watei is not always easily oi ieauily accessible foi many
situations. Eaithquake stiicken countiies such as Baiti anu }apan suffei the neeu foi clean
watei. 0theis have alieauy tiieu to pioviue watei foi those who uo not have it. The
solution most commonly useu is to puichase clean watei anu then tianspoit it to those who
neeu it. This methou can be successful because it ueliveis ieauy to uiink watei. All they
neeu aie containeis to caiiy it. The pioblem with this appioach ielates to cost that can be
expensive. Anothei solution is to funu sites to uiill watei wells. When the well is complete,
the local village can finally have access to watei. The pioblem with this is that not all well
watei is clean. Since they aie pulling the watei fiom the giounu, it may contain
contaminants that aient completely safe to uiink. A uiawback by using this methou is that
it uoesnt woik fast enough when a natuial uisastei occuis. Biilling a well anu installing
watei puiifieis can take up to a yeai. The piice can iange fiom $Suuu to $Suuu in costs to
setup.
0ne solution that has been pioposeu is to use gieen technology to make a poitable
solai poweieu uesalinization plant. Stuuents anu ieseaicheis have collaboiateu at
Nassachusetts Institute of Technology to cieate one. This system can clean up 1uuu gallons
of watei pei uay. It is alieauy poitable anu ieauy to be ueployeu in aieas of neeu. Bowevei,
this system costs $8uuu to constiuct, anu it is faiily laige |2j. A system like this isnt quite
poitable enough to move fiom location to location assuming theie aie not methous of
tianspoitation on iuial aieas. In auuition, NITs piototype is easily assembleu, but can be
Page 11 of 79

haiu to use foi people who aie not familiai with this technology. Since poitability makes
the system moie convenient, we aie pioposing a system baseu on the same concept;
pioviuing clean watei to people who neeu it using solai eneigy while keeping the oveiall
size minimum foi poitability.
0ne uisauvantage ovei NITs piototype is poitability. We will stay away fiom using
an auequately laige tank to holu watei. 0ui appioach is to simply use a moueiate size anu
weight containei not laigei than 2u gallons to avoiu cost anu to inciease poitability.
Compaieu to the NIT piototype, we aient buying a ieveise osmosis pump foi oui uesign.
Rathei we will use a vapoi uistillation piocess, which we will constiuct.

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III. REQUIREMENTS
In oui uesign we aie going to utilize the eneigy of the sun to cieate electiic cuiient.
The cuiient we obtain is to be inveiteu to an AC cuiient fiom its oiiginal BC state as shown
in Figuie S1.

Figure 31: Simplifieu Block Biagiam
As shown fiom the block uiagiam of Figuie S1, the system fiist staits by collecting
eneigy fiom the sun. The eneigy ieceiveu is uiiectly conveiteu to a high fiequency ac
signal. In tuin, this high fiequency ac signal is being useu to cieate heat thiough the coils.
This methou is known as inuuctive heating, which is a commonly useu technique to
geneiate heat. The heat piouuceu by this inuuctive heating is then utilizeu to boil the watei
in a tank placeu in close vicinity of the coil. Eventually, the boileu watei changes its physical
Page 13 of 79

state into watei vapoi, which will then piocess into vapoi uistillation fiom which clean
watei is acquiieu.
Electrical Requirements:
The powei iequiiements aie souiceu fiom a photovoltaic panel that pioviues 2u
volts at S Amps. The ieason foi oui choice of the Pv panel is because it is a clean
ienewable souice. The only thing that it neeus is the sun, but the sun is ieauily available.
Seconuly, the Pv panels uo not neeu any fuel. This ieuuces costs, anu uesign consiueiations.
An B biiuge topology will be useu foi the inveitei to cieate the high fiequency AC
signal. Foi oui coil to geneiate heat foi vapoi uistillation, we will neeu a high fiequency AC
cuiient. We will be uesigning the B biiuge inveitei fiom sciatch.
Mechanical Requirements:
In oiuei to minimize heat losses geneiateu by the woiking coil, we will use an
aluminum containei uue to the fact that aluminum is a veiy effective heat conuuctoi. In
auuition, we will enclose the woiking coil to pievent heat fiom flowing into the
enviionment anu also to minimize losses. The size of the aluminum containei is also yet to
be ueteimineu. We will use a coppei coil because it is affoiuable anu it is a ielatively goou
conuuctoi. The volume of watei will be taigeteu to be a few gallons, but its actual size will
be ueteimineu latei as the physical size of the woiking coil is yet to be ueciueu.

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IV. DESIGN
HBridge
Inverter

Figure 41: Full schematic of the BBiiuge inveitei with the thin inuuctoi
An BBiiuge inveitei will be able to accept BC powei anu conveit it into AC powei
foi the woik coil. The basic schematic of an Bbiiuge inveitei is shown in Figuie 41. Foi
the full biiuge uiivei we aie to use the 0BA2uSS full biiuge uiivei integiateu ciicuit (IC)
that will contiol the switching of the N0SFETs. The ieason why we chose the 0BA2uSS is
because of its ease of use anu its ability to uiive a full biiuge conveitei with any loau.

Page 15 of 79

Figure 42: 0BA2uSS IC anu its pin outs |4j
In auuition, this IC comes as a full biiuge contiollei that makes it suitable foi a one
chip solution to contiol the biiuge. Also, the 0BA2uSS is able to geneiate a fiequency of
2Su KBz that will inciease the heat geneiateu by the woik coil. The full biiuge contiollei IC
is what establishes the fiequency of the switches by manipulating a built in oscillatoi with a
capacitoi (C
osc
) anu a iesistoi (R
osc
). The manipulation equation is given below |4j.

K
osc
is the oscillatoi constant anu it has a iange of .89 (min) to 1.uS (max). R
osc
anu
C
osc
aie exteinal components we will use to manipulate the uesiieu fiequency on the biiuge
wheie the woik coil woulu be locateu. Bence, by using a stanuaiu value of the capacitoi of
1 nF anu the uesiieu biiuge fiequency of 2Su KBz we can solve foi the iesistance iequiieu.
Foi the oscillatoi constant we aie going to test the contiollei with both the min K
osc
anu the
Page 16 of 79

max K
osc
. Keeping this in minu anu using the equation pioviueu above, we can solve foi the
iequiieu iesistance to achieve a biiuge fiequency of 2Su KBz.
BRIuL
=
1
K
csc
R
csc
C
csc
(41)
R
osc
=
1
K
csc
C
csc
]
BRIDGE
(42)
R
osc
=
1
0.891nP250KHz
= 4494.S82u2 (4S)

Figure 43: R
0SC
anu C
0SC
connections to the chip
Foi this calculation we aie going to select a stanuaiu iesistoi value of 4.S K . Table
41 shows the uiffeient calculateu anu stanuaiu value iesistance.

Page 17 of 79

Table 41: 0BA2uSS Component Specification
Kos Cosc [nF] Fbridge [KHz] Rosc [] Rosc standard values [K]
u.89
1 2Su
4494.S82u22 4.S
u.97 412S.711S4 4.S
1.uS S8u9.S2S81 S.9

0nce the contiollei is able to geneiate the uesiieu biiuge fiequency of 2Su KBz, we
woulu then connect it to the BBiiuge to powei N0SFETS we selecteu. The N0SFETS aie
the actual switches that will be piouucing the AC output signal to the loau (woik coil) fiom
the BC input signal. Foi the N0SFET switches we selecteu the STPNK6uZ because they aie
fast powei N0SFET switches that can hanule cuiients up to 6 A. The Pv panel we aie
utilizing geneiates a max cuiient of 4.SS A at a max voltage of S4.S v. The STPNK6uZ
N0SFETS switches have a max R
SB0N
of 1.2 anu can opeiate safely unuei 1u4 W of powei
uissipation. Following the equation foi powei uissipation of the switch (N0SFET)
P
M0SPL1
= R
dson
I
RMS
2
(44)
wheie R
uson
is the inteinal on iesistance of the switch, I
RNS
is the ims cuiient flowing
thiough the switch (fiom Biain to Souice), anu B is the uuty cycle.

P
M0SPL1
= 1.20 4.SS
2
u.S = 11.SSSS w (4S)
As shown above the N0SFET switches aie suiteu to enuuie the powei
iequiiements.
In oiuei to uelivei maximum powei to the loau (woik coil) we woulu neeu to auu an
impeuance matching component to achieve iesonance. Since the woik coil is inuuctive
(having a positive impeuance), a capacitoi (negative impeuance) woulu be iequiieu to auu
to the ciicuit to obtain iesonance at 2Su KBz. Although we ueciueu to put the capacitoi anu
Page 18 of 79

the woik coil in seiies, we will test them in paiallel to see what gives us the best iesult. We
ueciueu to connect the capacitoi anu the woik coil in seiies, since baseu on LTspice
simulations the seiies connections hau moie cuiient flowing thiough the coil. 0nce the
ciicuit opeiates at iesonance, the maximum cuiient will flow thiough the coil thus giving is
a gieatei change in flux, which means moie heat.

Work Coil

Figure 44: Thin anu thick woik coils

Page 19 of 79

In oiuei to obtain maximum flux we ueciueu to auu an iion coie. The coie has a
ielative peimeability of appioximately Suuu, which makes this a bettei conuuctoi of flux
when compaieu to an empty coie of just aii with a peimeability of 4E
7
Bm.
We obtaineu two pieces of coppei wiie to cieate the coils fiom it as shown in Figure
44. We ueciueu that we woulu tiy out a thick coil anu a thin coil with uiffeient inuuctance
values to test the BBiiuge ciicuit anu see which one woulu piouuce moie heat in the coie.
0nce both coppei coils weie foimeu, we took the coils to the Powei electionics laboiatoiy
to measuie the inuuctance in the coils with the iion coie. To uo this piocess we weie
iequiieu to use the uigital biiuge. This tool is useu to measuie capacitance anu inuuctance
at uiffeient fiequencies, unfoitunately the maximum fiequency we weie able to measuie
was at 1uu KBz. To oveicome this pioblem we weie auviseu by Bi. Taufik to iecoiu the
inuuctance anu the inteinal seiies iesistance (ESR) at uiffeient fiequencies anu plot them
on an excel giaph. 0nce we iecoiueu anu plotteu the uata we weie able to extiapolate the
uata to appioximate anu inuuctance anu iesistance value foi both thin anu thick coppei
coils.

Page 20 of 79

Table 42: Thin Coil Inuuctance anu Resistances at Biffeient Fiequencies
Frequency[KHz] L[mH] R
1 0.0073 1.325
2 0.00647 1.3356
3 0.00604 1.3438
4 0.00576 1.352
5 0.00555 1.3601
6 0.0054 1.3681
6.6667 0.00531 1.3731
7.5 0.00522 1.3794
8.5715 0.00511 1.3877
10 0.00499 1.398
12 0.00485 1.4129
15 0.00468 1.4346
15.385 0.00467 1.4385
16.667 0.00461 1.466
18.182 0.00455 1.458
20 0.00448 1.4724
22.222 0.0044 1.4882
25 0.00432 1.5086
28.572 0.00423 1.5354
33.333 0.00412 1.571
40 0.004 1.6232
50 0.00385 1.7042
66.667 0.00365 1.8486
100 0.00334 2.1672

Page 21 of 79

Table 43: Thick Coil Inuuctance anu Resistances at Biffeient Fiequencies
Frequency[KHz] L[mH] R[]
1 0.00417 0.09932
2 0.00356 0.10699
3 0.00322 0.11409
4 0.003 0.12014
5 0.00282 0.12632
6 0.00269 0.13217
6.6667 0.00261 0.13605
7.5 0.00253 0.14059
8.5715 0.00244 0.14583
10 0.00234 0.1531
12 0.00223 0.16287
15 0.0021 0.17657
15.385 0.00209 0.17812
16.667 0.00205 0.18386
18.182 0.002 0.19052
20 0.00196 0.19662
22.222 0.0019 0.20725
25 0.00184 0.21862
28.572 0.00178 0.23312
33.333 0.00171 0.25204
40 0.00163 0.2779
50 0.00154 0.31648
66.667 0.00143 0.38272
100 0.00128 0.52107

In the tables shown above, we show the inuuctance anu iesistances of both the thick
anu thin woik coils at uiffeient fiequencies. As we can obseive, the tool we use to measuie
the coils coulu not ieach to 2Su KBz, theiefoie we measuieu the inuuctances anu
iesistances at all possible fiequencies anu then plotteu them. As shown in Figure 45
thiough Figure 48.

Page 22 of 79

Figure 45: Plot of the extiapolateu inuuctance of the thin coil

Figure 46: Plot of the extiapolateu inuuctance of the thick coil
u
u.uu1
u.uu2
u.uuS
u.uu4
u.uuS
u.uu6
u.uu7
u.uu8
2u 8u 18u 28u
I
n
d
u
c
t
a
n
c
e

(
m
H
)
Frequency (Hz)
Thin Coil w/Core Inductance vs.
Frequency
Thin Coil wCoie,
Inuuctance
Cuive Fit
Powei (Thin Coil wCoie,
Inuuctance)
u
u.uuuS
u.uu1
u.uu1S
u.uu2
u.uu2S
u.uuS
u.uuSS
u.uu4
u.uu4S
2u 8u 18u 28u
I
n
d
u
c
t
a
n
c
e

(
m
H
)
Frequency (Hz)
Thick Coil w/Core Inductance vs.
Frequency
Thick Coil WCoie,
Inuuctance
Cuive Fit
Powei (Thick Coil WCoie,
Inuuctance)
Page 23 of 79

Figure 47: Plot of the extiapolateu iesistance of the thin coil

Figure 48: Plot of the extiapolateu iesistance of the thick coil

u
u.S
1
1.S
2
2.S
S
S.S
4
2u 8u 18u 28u
R
e
s
i
s
t
a
n
c
e

(
o
h
m
s
)
Frequency (Hz)
Thin Coil Resistance vs. Frequency
Resistance vs. Fiequency
Cuive Fit
Lineai (Resistance vs.
Fiequency)
Lineai (Resistance vs.
Fiequency)
u
u.2
u.4
u.6
u.8
1
1.2
u Su 1uu 1Su 2uu 2Su
R
e
s
i
s
t
a
n
c
e

(
o
h
m
s
)
Frequency (Hz)
Thick Coil Resistance vs. Frequency
Resistance vs.
Fiequency
Cuive Fit
Lineai
(Resistance vs.
Fiequency)
Page 24 of 79

As shown above, we plotteu the inuuctances of both thin anu thick coils, anu using
Niciosoft Excel tienu line featuie we weie able to appioximate the expecteu inuuctance at
2Su KBz. 0sing the tienu lines powei iegiession = u.uu4SX
-0.26
anu R
2
= u.9996 foi the
thick inuuctance coil anu = u.uu7SX
-0.163
R
2
=u.9986 foi the thin coil, we appioximateu
L=1.u1 B anu L =2.94 B iespectively. The coiielation coefficient R
2
uenotes the quality of
the cuive fit. values foi R
2
close to 1 iepiesents a high quality appioximation.
The inuuctance we extiapolateu at 2Su KBz is as follows:
Thin Inuuctoi L = 2.94 B
Thick Inuuctoi L= 1.u1 B
The seiies iesistance we obtain by extiapolating the uata is as follows:
Thin Inuuctoi R = S.S7
Thick Inuuctoi R =1.1SS

Also we tiieu measuiing the inuuctance of the thick woik coil by applying a 1v
P

thiough a seiies netwoik of a S.S anu the thick woik coil. 0sing the time constant
equation = LR (46), anu knowing the value of the iesistoi anu we calculateu L to be as
shown in Figure 410.

Page 25 of 79

Figure 49: Cuiient thiough the thick coil
I
1HICK
= R = 6Suns S.S0 = 2.27SpE (47)

Figure 410: Cuiient thiough the thin coil
Page 26 of 79

The same pioceuuie was iepeateu foi the thin coil to calculate the inuuctance of the coil.

I
1HIN
= R = 78uns S.S0 = 2.7SpE (48)

Looking at the uata anu iealizing the iesistances foi both the thin anu thick
inuuctois aie big, we consulteu with Bi. Taufik to see whethei these iesistance values weie
a goou iuea to use in the simulations. We weie auviseu to measuie both coils iesistances
with a multimetei, anu to use that BC iesistance foi the simulations.

0nce we obtaineu the woik coil inuuctances anu knowing the opeiational fiequency
we weie able to use the equation below to calculate foi the iequiieu capacitances.

0
=
1
L
THICK COIL
C
THICK COIL
(49)
C
1HICK C0IL
=
[
1
n
0
L
THICK COIL
(41u)
C
1HICK C0IL
=
[
1
2n2S0KHz
1.0875H
= S92nF (411)
C neeueu foi thick coil = S92 nF

0
=
1
L
THIN COIL
C
THIN COIL
(412)
C
1HIN C0IL
=
[
1
n
0
L
THIN COIL
(41S)
C
1HIN C0IL
=
[
1
2n2S0KHz
2.94H
= 1S2nF (414)
Page 27 of 79

C neeueu foi thin coil = 1S2 nF

0nce we calculateu the capacitance we went aheau anu simulateu in LTspice to
veiify the iesonance at the uesiieu fiequency of 2Su KBz.

Figure 411: Full schematic of the BBiiuge inveitei with the thin inuuctoi
In this LTspice simulation, we put the inuuctance of the thin coppei coil anu its
iespective capacitoi foi iesonance.

Page 28 of 79

Figure 412 shows a fiequency sweep fiom 1u Bz to 1u NBz of the BBiiuge ciicuit
with the thin coil as a loau in seiies with the capacitoi. We can obseive that the ciicuit is at
iesonance at 2SuKBz as expecteu fiom the calculations.

Figure 412: Boue plot of the thin coil

Page 29 of 79

Figure 413 uisplays the cuiient seen thiough the thin woik coil. This cuiient is at
iesonance fiequency of 2Su KBz. The uistuibance seen on the plot is uue to the switches
having ovei lap, theiefoie theie is a uiiect path to giounu anu no cuiient thiough the woik
coil. The 0BA2uSS contiollei compensates with ueau time between the switches, thus no
oveilap will occui.
Figure 413: LTspice simulation of the cuiient flowing thiough the thin inuuctoi

Page 30 of 79

In this LTspice simulation, we put the inuuctance of the thick coppei coil anu its
iespective capacitoi foi iesonance. The schematic is uepicteu in Figure 414.
Figure 414: Full schematic of the BBiiuge inveitei with the thick inuuctoi

Figure 415 shows a fiequency sweep fiom 1u Bz to 1u NBz of the BBiiuge ciicuit
with the thick coil as a loau in seiies with the capacitoi. We can obseive that the ciicuit is at
iesonance at 2SuKBz as expecteu foi the calculations

Page 31 of 79

Figure 415: Boue plot of the thick coil

Figure 416 shows the cuiient seen thiough the thick woik coil. This cuiient is at
iesonance fiequency of 2Su KBz. }ust as befoie, uistuibance seen on the plot is uue to the
switches having ovei lap, theiefoie theie is a uiiect path to giounu anu no cuiient thiough
the woik coil. The 0BA2uSS contiollei compensates with ueau time between the switches,
thus no oveilap will occui.

Page 32 of 79

Figure 416: LTspice simulation of the cuiient flowing thiough the thick inuuctoi

The uiffeience of the amplituue of the cuiients thiough the thin anu thick woik coils
aie uue to the uiffeient iesistances anu inuuctances of the coils. By compaiing Figure 413
with Figure 416 we can see that the thick coil is the one that piouuces gieatei amplituue
in the cuiient. The ieason behinu it is because theie is moie coppei making it easiei foi the
elections to flow thiough it.

Page 33 of 79

Condensation System

Figure 417: Conceptual image of a vapoi uistillation system.
0sing the heat geneiateu fiom the flux moving thiough the iion coie, we aie going
to builu a vapoi uistillation system. This methou is a veiy effective way to obtain clean
watei. Boiling watei kills up to 99.99% of all the bacteiia that is why it has been useu foi
uecaues since its simple, efficient, anu inexpensive. Foi thiiu woilu countiies this methou
will fit peifectly since the necessity of clean watei is a piioiity. By boiling uiity watei, any
physical contaminants will be left behinu in the ieseivoii. As seen fiom Figure 417, theie
aie going to be thiee main components. The fiist component is the boiling watei containei.
This component will be useu to place uiity watei in anu is to be placeu on top of metal coie.
The seconu component is a heat exchangei. A heat exchangei is basically a uevice that
helps tiansfei heat fiom one fluiu to anothei without allowing uiiect contact of the fluius.
Aftei uoing ieseaich into this topic anu heaiing suggestions fiom fiienus whose expeitise
Page 34 of 79

is Theimouynamics, we ueciueu to builu oui own heat exchangei. Regulai heat exchangeis
aie veiy costly; piices can iange fiom $Suu1uuu. This instiument is not highly expensive
but also iequiies a watei pump. Theiefoie, we came to the conclusion of uesigning anu
builuing oui own heat exchangei foi the puipose of cost anu eneigy efficiency of the oveiall
system. The last but not the least impoitant component is a steam containei. Steam
containei is a laige tube capable of holuing up to one gallon of steam watei.
Theie will be a small containei foi the uiity watei to iest in. This containei will be
connecteu to the boiling ieseivoii via coppei tubing, which is safe foi watei to tiavel in.
0nce the boiling ieseivoii becomes hot enough, the watei will begin to boil. 0nce the watei
has become steam, it will tiavel thiough moie coppei tubing. This tubing will be guiueu
back thiough the uiity watei containei, which will be consiueiably coolei. This coluei
watei will conuense the hot steam in the pipes into watei. At the enu of the tubing, clean
watei will uiop out into a thiiu ieseivoii.

Page 35 of 79

V. CONSTRUCTION AND TESTING
Solar Panels

The solai panel is pioviueu by Bi. Taufik. They aie to be useu in this expeiiment
once all the othei components aie woiking piopeily. The bianu of the solai panel is BP SX
1Sus has an open ciicuit voltage of 4S.S v, anu a shoit ciicuit cuiient of 4.7S A. Figure 51
shows the solai panel useu foi this pioject.

Figure 51: Image of solai panel to be useu foi pioject

Page 36 of 79

In the Figure 52 we can obseive the iatings on the solai panel pioviueu by the
manufactuiei, these iatings aie going to be testeu to ensuie that the uata is accuiate.

Figure 52: Shows the iatings of the BP solai panels.

Two tests that woulu be ciitical to peifoim aie the open ciicuit anu shoit ciicuit
tests with iespect to the panel inclination angle. Since the system will be piototypeu in San
Luis 0bispo, the test shoulu then be peifoimeu in San Luis 0bispo. As it can be obseiveu
fiom Table 51 anu Figures 53 anu Figure 54, the panel piouuces moie eneigy at an
Page 37 of 79

inclination of 24.8S uegiees. Since this is this is the location wheie the panel is to be testeu,
that woulu be the angle of hoiizontal to be useu.
Table 51: Inclination voltages anu cuiients uata
Panel Inclination [degrees] V
oc
[V]

I
sc
[A]

0 37.9 4.65
5 38 4.78
10 38 4.9
15 38.1 4.97
20 38.1 5
25 38.1 5
30 38.1 4.95
35 38.1 4.9
40 38.1 4.8
45 38.1 4.64
50 38.1 4.5
55 38.1 4.29
60 38 4.07
65 37.8 3.86
70 37.7 3.67
75 37.5 3.34
80 37.2 2.96
85 36.9 2.65
90 36.5 2.3

Figure 53: 0pen ciicuit voltage vs. panel inclination

SS
S6
S7
S8
S9
4u
0 10 20 30 40 50 60 70 80 90 100
O
p
e
n

C
i
r
c
u
i
t

V
o
l
t
a
g
e

(
V
)
Inclination (degrees South from horizontal)
Open Circuit Voltage vs. Panel
Inclination, April 15 at Solar Noon
Page 38 of 79

Figure 54: Shoit ciicuit cuiient vs. panel inclination

The next test that was peifoimeu was the Iv chaiacteiistics measuiement of he
panel. The iesults aie shown in Figure 5S, anu Tables 52 anu 5S. As it was to be
expecteu, the panel woulu not give us the maximum values as the iateu, but thiough
this test we can see moie accuiate values of what to expect. In auuition, we can
obseive that the maximum powei we can obtain using this panel, is when the
voltage is at S8.S8 v anu the cuiient is at 4.Su A that is 172.71 W.

u
1
2
S
4
S
6
0 10 20 30 40 50 60 70 80 90 100
S
h
o
r
t

C
i
r
c
u
i
t

C
u
r
r
e
n
t

(
A
)
Inclination (degrees South from horizontal)
Short Circuit Current vs Panel
Inclination, April 15 at Solar Noon
Page 39 of 79

Table 52: Iv chaiacteiistics uata
I[A] V[V] R[] P[W]
0 38.38 #DIV/0! 0
0.2 38.04 190.2 7.608
0.4 37.71 94.275 15.084
0.6 37.37 62.28333 22.422
0.8 37.03 46.2875 29.624
1 36.66 36.66 36.66
1.2 36.28 30.23333 43.536
1.4 35.91 25.65 50.274
1.6 35.55 22.21875 56.88
1.8 35.16 19.53333 63.288
2 34.74 17.37 69.48
2.2 34.32 15.6 75.504
2.4 33.88 14.11667 81.312
2.6 33.4 12.84615 86.84
2.8 32.89 11.74643 92.092
3 32.34 10.78 97.02
3.2 31.67 9.896875 101.344
3.4 30.97 9.108824 105.298
3.6 30.22 8.394444 108.792
3.8 29.34 7.721053 111.492
4 28.15 7.0375 112.6
4.2 26.34 6.271429 110.628
4.4 18.8 4.272727 82.72
4.5 0 0 0

Page 40 of 79

Figure 55: Plot of the cuiient vs. the voltage of the panel
Table 53: Compaiison of the nominal to the measuieu values
Voc(V) Isc(A)
Vmp
(V) Imp(A)
Pmax
(W)
Fill
Factor
Nominal 43.50 4.75 34.50 4.35 150.08 0.73
Measured 38.38 4.50 28.15 4.00 112.60 0.65

u
1u
2u
Su
4u
Su
0 1 2 3 4 5
P
a
n
e
l

V
o
l
t
a
g
e

(
V
)
Panel Current (A)
Solar Panel IV Characteristic
Curve
Page 41 of 79

HBridge (no load)
Figure 56 shows that theie aie S key components of the Bbiiuge inveitei: the
0BA2uSST Full biiuge contiollei, anu the 4 STP6NK6uZ N0SFETS. To eliminate noise, we
solueieu the Bbiiuge to a piotoboaiu. This piotoboaiu is capable of withstanuing a highei
level of ampeiage than a bieauboaiu. We hau buint foui 0BA2uSSs thioughout the entiie
testing piocess. All foui, which weie buint, hau loau attacheu to them. We ueciueu to
monitoi the gate signals anu output voltages befoie loauing the Bbiiuge. This alloweu us
to ueteimine if the iight signals weie being sent at the coiiect fiequencies.

Figure 56: Image of the Bbiiuge inveitei

Page 42 of 79

Thioughout this piocess, we hau to iecalculate some of the values, which weie
calculateu eailiei in the uesign. Fiist of all, we concluueu that it woulu be best to iemain at
a fiequency of 2uu KBz. We chose to uo this because the highest possibly fiequency
alloweu by the contiollei is 2Su KBz. This is only possible when we get the iight oscillation
constant K
osc
, which is not a vaiiable we can contiol. The value of K
osc
is a paiametei that is
contiolleu by the quality of the chip, anu the testing paiameteis foi the 0BA2uSS. As listeu,
K
osc
ianges fiom u.89 to 1.uS with u.97 being the typical value |4j. Bowevei, this value was
obtaineu foi an oscillation fiequency of Suu Bz. When we hau calculateu an oscillation
fiequency of 2Su KBz anu useu new values foi R
osc
anu C
osc
as 1SuK anu S2pF,
iespectively. Yet the oscillation fiequency we measuieu was 1u8 KBz. So now using
equation (41) with the new R
osc
as 1uu K,

C
osc
as 1upF anu F
biiuge
set to 2uu KBz, we
calculateu K
osc
to be S0sing these new values, we weie able to obtain gate signals which
oscillateu at appioximately 2uu KBz. All 0BA2uSSs we useu weie souiceu by a 12.S v
BC

anu a limiteu cuiient of 2uu mA.
Both gate signals seen in Figure 52 anu Figure 58 aie foi the uppeileft anu
uppeiiight N0SFETS in the Bbiiuge. Each signal has a BCoffset of 7.4 v
BC
, anu oscillates
between 11.S

anu 7.4 v
BC
at a fiequency of 196.24 KBz. The 0BA2uSS senus 4 voltage
signals foi the N0SFETS: 2 gate signals, anu 2 souice voltages. The souice voltages set the
uppei N0SFETs souices to a highei potential than giounu. When the gate signal goes high,
the uiffeience in potential between the souice anu the gate allow the N0SFET to conuuct.
When the gate signal goes low anu matches the value seen on the souice, the N0SFETs
channel closes anu cannot conuuct cuiient.
Page 43 of 79

Figure 57: 0nloaueu 0BA2uSS
output signal pin 1S (v
uBL
)

Figure 58: 0nloaueu 0BA2uSS output signal pin 28 (v
uBR
)

Page 44 of 79

The two images shown in Figure 59 anu Figure 510 aie the output signals foi the
two lowei N0SFETS. These signals oscillate fiom u to 12.S v
BC
at a fiequency of 198.614
KBz. 0nlike the uppei N0SFETs, the souices on these switches weie tieu to giounu (PuNB,
pin 21).

Figure 59: 0nloaueu 0BA2uSS output signal pin 2u (v
uLL
)

Page 45 of 79

Figure 510: 0nloaueu 0BA2uSS output signal pin 2S (v
uLR
)
HBridge (loaded)

0nce we hau obseiveu the output signals of oui unloaueu 0BA2uSS chip, we
ueciueu to attach thiee uiffeient iesistive loaus to obseive anu analyze oui Bbiiuge
inveiteis peifoimance. But even aftei simply connecting the Bbiiuge to the contiollei, it
uiu not behave as expecteu (at fiist). The uppei two N0SFETs gate signals weie uenatuieu
aftei even light loauing while the two bottom gate signals iemain unchangeu.
To measuie cuiient, we useu the cuiient piobe. When the oscilloscope is maikeu at
1umvuivision that uiiectly tianslates to Auivision baseu on the cuiient piobes knob.
When the oscilloscope uoes not uisplay 1umAuivision, the equation to calculate the
Auivision is

0scIIoscopc (mvson)
10mvson
x (Currcnt :oluc on tbc knob) (S1)

Page 46 of 79

Load One: 1000

Figures 511 thiough Figure 514 aie the gate output signals uiiven by the
0BA2uSS. The 0BA2uSS emits 8 signals in its entiiety. Foui of the signals sent (v
uBL
,
v
uBR
, v
uLL,
v
uLR
) aie 2uu KBz signals sent to the gates of the N0SFETS to contiol the
switching. Two BC signals (v
SBL
anu v
SBR
) aie sent to the uppei N0SFETs souices.
The last two signals (v
FSL
anu v
FSR
) aie the uppei voltage iails foi oscillation as
explaineu latei. Table 54 shows the expecteu voltages foi oscillation baseu upon
the 0BA2uSS uatasheet |4j. The uppei signals aie expecteu to oscillate between v
FSR

anu v
SBR
. The values of v
FSR
anu v
SBR
aie expecteu to be equal to v
FSL
anu v
SBL
. The
signals shown in Figure 511 anu Figure 512 aie the gate signals foi the uppei left
anu iight N0SFETs, iespectively. With piopei opeiation, both aie supposeu to
oscillate fiom 11.68 to S.4S v
BC
with a BC offset of S.4S v
BC
. But once they aie loaueu
with 1uuu , they uo not show the BC offset that is expecteu. They still switch, but
they uiop below S.4S v
BC
. At the same time, they uo not look as clean as those
signals seen in Figure 57 anu Figure 58 in the unloaueu cases. The signals seen in
Figure 513 anu Figure 514 uo oscillate fiom theii expecteu values of 12.S (v
BB
)
to u (giounu). Again, the only uisceinable uiffeience is that the signals aie not as
clean as the unloaueu gate signals seen in Figure 57 anu 58
Page 47 of 79

Figure 511: Loaueu 0BA2uSS output signal pin 1S (v
uBL
)

Figure 512: Loaueu 0BA2uSS output signal pin 28 (v
uBR
)

Page 48 of 79

Figure 513: Loaueu 0BA2uSS output signal pin 2u (v
uLL
)

uLR
)

Page 49 of 79

Table 54: 0BA2uSS 0utput voltages

UBA2035 Pin no. Signal Name V
DC

27 v
FSR
11.68
26 v
SBR
S.4S
16 v
FSL
11.68
17 v
SBL
S.4S

Compaiing these values to the uatasheet, we concluueu that these values weie
within expecteu paiameteis.
As shown in Figure 515 the scale is 1umvuivision foi the cuiient acioss the
1uuu. As configuieu on the cuiient piobe, each 1umvuivision seen on the oscilloscope
coiiesponus to 1mAuivision. This means the peaktopeak value of this cuiient is 7 mA.
Aftei allowing one minute foi the ciicuit to opeiate, the chip staiteu to bieak uown.
The top two N0SFETs switching fiequency spikeu up while the amplituue went low. The
lowei two N0SFETs appeaieu to be woiking as expecteu.

Figure 515: Cuiient acioss 1uuu loau
Page 50 of 79

Load Two: 120

As was the case foi the 1uuu loau we attacheu to the Bbiiuge inveitei, the
lowei two gate signals vieweu in Figure 518 anu Figure 519 oscillateu fiom the
expecteu values of 12.S to u v
BC
. The uppei two N0SFETs showeu no BC offset as
expecteu although they uiu oscillate within expecteu paiameteis as explaineu on
Page 46.

uBL
)

Page 51 of 79

uBR
)

uLL
)

Page 52 of 79

uLR
)


DC

27 v
FSR
11.S9
26 v
SBR
S.27
16 v
FSL
11.S9
17 v
SBL
S.27

Page 53 of 79

As shown in Figure 520 the scale is Sumvuivision. The value of the knob on the
cuiient piobe was 1mAuivision. 0sing equation (S1), we can calculate the Auivision foi
the cuiient piobe, which calculates to SmAuivision. This numbei tianslates to a 22 mA
PP

cuiient thiough the 12u loau.

50mvdson
10mvdson
x [
1mA
dson
= SmAJi:ision (S2)

Figure 520: Cuiient acioss 12u loau.

Page 54 of 79

Load Three: 10.2

The gate signals seen foi the uppei N0SFETs gate foi this loau in Figure 521
anu Figure 522 weie veiy uistoiteu compaieu to expecteu values. Rathei than
oscillating fiom above 11 v
BC
to appioximately S v
BC
, they both only ieacheu
maximum amplituue of 6uu mA. They also uiu not show the expecteu BC offset as
was seen in the unloaueu case. The only signal that oscillateu neai 2uu KBz was the
uppei left N0SFET as obseiveu in Figure 521. The othei thiee signals seen in
Figure 522 thiough Figure 224 oscillateu at 19u KBz, S9u KBz, anu S9S KBz
iespectively. The lowei two N0SFET gate signals seen in Figure 523 anu Figure 5
24 uiu oscillate fiom 12.S to u v
BC
as expecteu.

uBL
)

Page 55 of 79

uBR
)

uLL
)

Page 56 of 79

uLR
)


DC

27 v
FSR
1u.S1
26 v
SBR
2.u7
16 v
FSL
1u.S1
17 v
SBL
2.u7

Page 57 of 79

As seen in Figure 525, we no longei hau a full AC signal on the loau. It also uiu not
oscillate at oui uesigneu value of 2uu KBz but iathei 186 KBz. The gate signals all
woiseneu with this loau. Soon theieaftei, this chip buint out as well.

Figure 525: Cuiient acioss 1u.2 loau

Figure 526: 1u.2 iesistive loau. Capable of uissipating SuuW.
Page 58 of 79

Work Coils

0ui oiiginal uesign calleu foi oui woik coil loau to be in seiies with capacitois.
Bowevei, aftei fuithei consiueiation we ueciueu to place the capacitoi bank in paiallel
with the woik coil. This achieves a highei cuiient thiough the coil anu less stiess on the
capacitois in teims of heat uissipation.
Thioughout the uuiation of testing, the thick woik coil bioke. As we tiieu to
appioximate the value of the inuuctance of the thick coil, we unfoitunately woie uown the
epoxy we useu to maintain the coil at a fixeu position. By intiouucing the coie into the thick
coil, iemoving it fiom the coil, anu taking it to uiffeient benches to use the uiffeient
equipment, the epoxy that maintaineu the coil in fixeu position bioke. Aftei this, the coil
was no longei stable anu hau movement like a spiing. This movement uiiectly affects the
inuuctance of the thick coil anu maue it unieliable foi fuithei testing. If the Bbiiuge weie
to be built using the coil whose inuuctance was not stable, it woulu be uifficult to achieve
iesonance in the biiuge. Since the thin coil is wiuei the coie can be inseiteu without any
iisk of uamaging the coil. This makes the thin coil moie ieliable.
The one concept that still iemaineu was foi oui loau to iemain at iesonance foi a
2uu KBz signal. With oui loau at iesonance, less stiain woulu be placeu upon the 0BA2uSS.
The loau woulu be consiueieu an open anu woulu iequiie less gate cuiient uiawn thiough
the N0SFETS fiom the 0BA2uSS. The iesistive loaus that we hau tiieu eailiei weie
uemanuing moie cuiient fiom the IC anu bieaking oui chips. With a high fiequency of 2uu
KBz, it is veiy impoitant to have oui loau achieve iesonance oi else it will also bieak the
ICs with its uemanu of gate cuiient.
Page 59 of 79

Foi oui loau, a capacitive bank was useu in paiallel with the inuuctive woik coil anu
coie to achieve iesonance. 0ne nuance we iealizeu is that the iateu capacitoi value uiu not
stay the same at 1uu KBz on the impeuance analyzei. The values consistently uegiaueu by
at least Su% of its iateu capacitance. With this knowleuge, we assumeu the expecteu
capacitance at 2uu KBz woulu be even lowei than that at 1uu KBz. As suggesteu by Bi.
Taufik, we peifoimeu tests on the capacitoi anu inuuctoi to tiy anu obtain moie accuiate
values foi the components.
Figure 527: Ciicuit foi calculation of inuuctance at 2uu KBz

By setting up a 2uu KBz signal with u.1 v
PP
(u.u7u7 v
ims
), we woulu measuie the
RNS AC cuiient thiough the inuuctoi. We coulu then calculate explicitly foi the ieactance,
anu then the inuuctoi value as shown below.

Page 60 of 79

I = I X
L
(SS)
X
L
=
v
I
(S4)
X
L
= 2 L I (SS)
v
I
= 2 L I (S6)
I =
v
2IL]
(S7)
I =
70mv
RMS
2L(12mA
RMS
)(200,000 Hz)
= 4.68 uB (S8)

Knowing the actual inuuctance of oui woik coil with the coie insiue, we coulu now
calculate the necessaiy capacitance neeueu foi iesonance at 2uu KBz.
C =
[
1
2n]
c
2
L
=
[
1
2n200 KHz
2
4.68 uH
= 1SS nF (S9)

With this knowleuge, we coulu now test foi inuiviuual capacitances to make a bank.
We weie able to finu capacitois, thiough anothei test ciicuit, of 2u anu Su nF that aie well
suiteu foi this puipose with theii voltage iatings of 1uuv.

Page 61 of 79

Figure 528: Ciicuit foi calculation of capacitance at 2uu KBz
The methou foi calculation of capacitances C
1
anu C
2
is shown below.
I = I X
C
(S1u)
X
C
=
v
I
=
1
2n]C
(S11)
1
2n]C
=
v
I
(S12)
I
v2n]
= C (S1S)
C
1
=
1.29mA
3.5355v2n200KHz
= SunF (S14)

C
2
=
89mA
3.5355v2n200KHz
= 2unF (S1S)

These capacitois weie assembleu as shown in Figure 529.

Page 62 of 79

Figure 529: Capacitoi bank configuiation

This configuiation of capacitois in seiies anu in paiallel gives us a bank with 14unF,
which we believeu was close enough to 1SSnF. We wanteu to have a faii amount of
bianches foi easiei uissipation of heat amongst the capacitois. The ESR anu the cuiients
woulu quickly heat the capacitois. These bianches help alleviate that stiain on each
capacitoi. With this now set up, oui woik coil was ieauy to attach in paiallel to the bank.

Page 63 of 79

Figure 530: 0ui thin woik coil in paiallel with the capacitoi bank

Page 64 of 79

Load Four: Work coil with capacitive bank

The next step was to attach oui LCloau to the Bbiiuge inveitei. With the 0BA2uSS
set to cieate a biiuge fiequency of 2uu KBz anu the LCloau uesigneu to iesonate at the
mentioneu fiequency, we connecteu the loau anu poweieu the Bbiiuge as uepicteu in
Figure 531.

Figure 531: Fully loaueu Bbiiuge inveitei

Page 65 of 79

Figure 532 uisplays the cuiient thiough woik coil at 192 KBz anu using the
equation S1, we can calculate the amplituue of the cuiient to be as follows:
I
pc dson
=
SumIJi:ision
1umIJi:ision
x [
1I
Ji:ision
= 1 AJi:ision (S16)
0sing this infoimation, anu the figuie above we calculateu the cuiient to be 4.2S A
PP.
This
veiifies the functionality of the Bbiiuge since we weie souicing a 4.SS A to the woik coil.

Figure 532: Cuiient thiough woik coil at 192 KBz

0sing the 6uvSuA BC powei supply, we weie able to uiive 4.SSA thiough the loau
at 192 KBz. Although not exactly at 2uu KBz, this signal is still switching at a high
fiequency thiough the loau, anu still at Su% uuty cycle.

Page 66 of 79

The loau voltage as shown in Figure 533 is S.41 anu not the value of v
BB
. The
ieason foi this is we limiteu the cuiient flowing thiough the N0SFETS uue to low cuiient
iating |Sj. The highest cuiient iating that the N0SFET can withstanu is 6A, anu it was
alieauy at 4.SSA. We chose to limit the cuiient to this level because this is the expecteu
output cuiient fiom the solai panels in oui uesign.

Figure 533: voltage seen acioss loau

Page 67 of 79

Condensation System

Some iueas weie consiueieu foi this system. The fiist one was to builu a stanu maue
of PvC piping. The pioblem with this appioach is that when the stanu gets waim, the piping
will benu anu waip. AvS piping is expensive, anu haiuei to assemble a fieestanuing system.
Anothei appioach was to use woou as oui fiame. Woou is stiong, cheap, anu easy to
manipulate anu assemble. Foi oui piototype of this system, we ueteimineu that a woou
fiame woulu be the least expensive to builu anu easiest to ieplicate (foi otheis). We
ueciueu a S stanu woulu give us enough cleaiance foi the iest of the components foi the
system anu woulu also allow us to install a foluable mount foi holuing up oui ciicuit anu
woik coil. To secuie the woouen pole, foui 16 woouen feet weie auueu. Since poitability is
one of oui main conceins, wheels weie attacheu unueineath the feet. Altogethei, the
stanuing woouen mechanism has a weight of appioximately 1S pounus as shown in Figure
534.

Figure 534: Stanuing woouen pole with feet
Page 68 of 79

0nce the stanuing post was assembleu anu ieauy, the next step was to mount the
selecteu components. As seen in Figure 535 the fiist element we glueu togethei was the
heat exchangei. To glue these elements togethei, ABS cement was useu since this glue can
withstanu high tempeiatuies anu still holu.
Figure 535: Bisassembleu heat exchange chambei

Page 69 of 79

The inteinal piping that iuns thiough the heat exchangei can be seen in Figure 5
36. The colu watei that sits outsiue the thin pipe will help conuensate the hot steam
flowing the thin pipe insiue the heat exchangei.

Figure 536 Insiueview of cooling chambei

Page 70 of 79

As seen in Figure 537, the funnel is useu to poui colu watei into the chambei. The
white PvC pipe is useu to guiue the steam thiough the insiue, alongsiue the colu watei.
Figure 537: Siue view of completeu heat exchangei.

Page 71 of 79

Fiom the enu of the heat exchangei, the PvC piping leaus into one last element as
shown in Figure 538. This is the clean watei containei. This 1gallon ABS pipe allows foi
fuithei conuensation of the steam with its inteinal space. This gives the steam one last
phase to conuense into watei. By giving the steam moie space to spieau out on to the walls
the volume of watei that will conuense will inciease compaieu to the PvC pipe in the
system.

Figure 5 38: Integiation of heat exchangei anu watei containei.

Page 72 of 79

Aftei final checks weie uone, no watei leakages weie piesent. The next step was to
builu a connectoi that will coulu fit oui into the aluminum pot shown in Figure 539. The
aluminum pot is basically a uiink mixei that we thought coulu satisfy oui necessities in
teims of selecting a containei with thin walls anu itself being goou heat containei. Foi
testing puiposes we bought a slow cookei as a way of using it as a hot plate to heat up the
watei containei anu boil watei foi testing. Seveial tests weie uone using this methou: the
fiist one using the uiink mixei anu the othei using the slow cookei as the containei to boil
the watei. It tuins out that using the slow cookei gives us a moie efficient way to puiify
watei since we get moie steam flowing thiu the PvC pipes, which means moie piessuie.

Figure 539: Full wateipuiifying system
Page 73 of 79

With enough piessuie to piopel the steam thiough the pipes, the conuensation
system was able to successfully boil anu conuensate watei. Right now, the cuiient system
is not veiy efficient. At piesent, it takes 2u minutes to begin to boil 72 ounces of watei
when the boilei is set to 4uu uegiees. Aftei this fiist peiiou, it takes anothei 1S minutes to
conuensate only 12 ounces of watei. This gives it an efficiency of 16% baseu on watei input
vs. watei output.

Page 74 of 79

CONCLUSION
0ui objective foi this pioject was a pioof of concept: that we coulu make a poitable
solai uesalinization unit using solai panels, an Bbiiuge inveitei, a woik coil with a coie
insiue, anu vapoi uistillation. Cieating a system that uses solai powei to clean watei is not
a veiy simple task by any means. Size anu cost of components weie a big issue with oui
uesign because we want it to be poitable anu cheap at the same time. Stuuying anu leaining
uiffeient uesign topologies was veiy time consuming anu left us feeling like we hit a ueau
enu when we founu one iuea woulunt woik. Thiough the couise of this pioject we leaineu
a gieat ueal about conveiting BC to AC. Thiough the use of the 0BA2uSS full biiuge uiivei,
the conveision fiom BC to AC at a ieasonably cheap value is possible. The use of an
inuuctoi coil to geneiate heat with flux makes gives us the eneigy we neeu foi vapoi
uistillation. We uiunt know about inuuctive heating befoie this pioject, anu now we aie
using that technology to uistill watei. Although this pioject has come to an enu,
impiovements coulu still be maue.
We weie able to make the Bbiiuge inveitei that coulu woik with the BPX1SuS solai
panel anu woulu sink 4.SSA. This Bbiiuge piototype woulu not be able to stay on foi veiy
long uue to the N0SFETs heating up veiy quickly. A methou of cooling the N0SFETs moie
iapiuly woulu allow the Bbiiuge inveitei to be testeu fuithei. The contiollei we weie
using was unable to uiive the powei N0SFETs we hau selecteu foi sinking 8A. This
pieventeu the Bbiiuge inveitei fiom being attacheu to the solai panels foi testing. We
believe that the 0BA2uSS chip is simply not compatible with the IXFB4uNSu powei
N0SFETs. These being highpoweieu switches, we believe that the contiollei cannot uiive
the gates with enough powei.
Page 75 of 79

The woik coils weie maue out of coppei, anu wounu piopeily with even gap
spacing. But with the Bbiiuge piototype we constiucteu not sinking the cuiient we
wanteu to, we nevei uiu finu out if the coie we hau woulu actually piouuce enough heat foi
boiling. The unexpecteu length of time foi the Bbiiuge constiuction contiibuteu to not
having fuithei testing with the woik coil anu coie. Fuithei ieseaich neeus to be uone
which ielates the amount of flux piouuceu by the high fiequency AC cuiient will geneiate a
ceitain amount of heat. Anothei topic to be exploieu woulu be Bi. Bolans auvice
conceining the woik coie: to ueteimine the best fiequency to maximize heat geneiation
thiough coie losses. That piocess alone is enough woik foi one senioi pioject itself.
The conuensation system uiu woik. It useu heat to boil watei into steam, anu
conuense it back into watei. A few impiovements on the system coulu inciease the
efficiency. Sixteen peicent is too low. New iueas coulu be appioacheu on how to cool the
steam uown fast enough, which woulu maximize the watei useu. 0ne iuea we believe
woulu conuense the steam fastei is if we ian multiple tubes uown thiough the heat
exchangei. Noie steam woulu then be able to conuense. The piping woulu also neeu to be
ieplaceu with nonplastic mateiials, such as coppei tubing. When hot steam is iun thiough
PvC piping, theie is a chance that chemicals not safe foi uiinking will be ieleaseu by the
steams heat anu absoibeu in the watei. Coppei tubing woulu not suffei this pioblem.
We feel goou knowing that oui pioject can giow into something veiy useful foi
people who stiuggle to get clean uiinking watei. This pioject alloweu us to use engineeiing
in the veiy funuamental sense of the woiu: using science, mathematics, anu souices of
eneigy to be maue into something useful foi the benefit of humanity.
Page 76 of 79

The unexpecteu length of time useu to piopeily builu the inveitei pieventeu us
fiom having enough time to piopeily test poweiing the Bbiiuge inveitei with the solai
panels. Without this connection, we weie not able to fully constiuct the system we
uesigneu.

Page 77 of 79

BIBLIOGRAPHY
|1j "Clean Watei Foi The Woilu." Clean Water For The World. Web. u1 Api. 2u11.
<http:www.cleanwateifoithewoilu.oig>.

|2j Smait Powei anu Watei foi Challenging Enviionments Web u1 Api. 2u11.
<http:iobots.mit.euupiojectsKF0PNinuex.html>

|Sj Ameiitheim Co Web u8 Api. 2u11.
<http:www.ameitheim.com>

|4j 0BA2uSS uatasheet, Rev. u1S1 0ctobei 2uu8
|Sj STP6NK6uZ uatasheet, Nay 2uu2
|6j Bi. Taufiks lectuie notes of EE 41u anu EE 4SS

Page 78 of 79

Appendices

PART LIST AND COST

HBridge

Qty Component Costperunit($)
1 UBA2035fullbridgedriverIC 1.83
8 30nF,100Vcapacitor 0.17
4 20nF,100Vcapacitor 0.15
1 1nFcapacitor 1.15
1 Protoboard 2.19
1 100Kresistor 0.84
1 CopperBondEpoxy 5.45
1 Setof22gaugewires 5.35
1 Packageofgrabbers 2.50
4 STP6NK60ZMOSFETS 1.69
1 BPSX150SSolarPanel 0
TotalHBridgeCost 22.96

Work Coil

1 10guagecopperwire 3.45
1 13gaugecopperwire 3.45
TotalWorkCoilCost 6.90

Page 79 of 79

Condensation System

4 PVCElbows 2.28
1 5PVCpiping 4.27
1 Funnel 1.47
1 ABSblacktube 10.95
4 ABSCaps 33.27
1 ABSCement 4.19
2 Nokinkvalves 18.68
1 WoodScrews 2.00
2 BronzeHinges 2.78
4 CornerBraces 7.94
1 Package,4wheels 4.96
1 Wood 0
TotalCondensationSystemCost 120.51

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Portable Solar Desalination System

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