TPC8204

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (UMOSII)

TPC8204
Lithium Ion Battery Applications Portable Equipment Applications Notebook PCs
Small footprint due to small and thin package Low drainsource ON resistance Low leakage current Enhancementmode : RDS (ON) = 16 m (typ.) High forward transfer admittance : |Yfs| = 18 S (typ.) : IDSS = 10 A (max) (VDS = 20 V) : Vth = 0.5~1.2 V (VDS = 10 V, ID = 200 A) Unit: mm

Maximum Ratings (Ta = 25C)

Characteristics Drain-source voltage Drain-gate voltage (RGS = 20k) Gate-source voltage Drain curren DC Pulse (Note 1) Symbol VDSS VDGR VGSS ID IDP PD (1) Rating 20 20 12 6 24 1.5 W PD(2) 1.1 Unit V V V A

JEDEC JEITA TOSHIBA

2-6J1E

Single-device operation Drain power (Note 3a) dissipation (t = 10s) Single-device value (Note 2a) at dual operation (Note 3b) Drain power dissipation (t = 10s) Single-device value (Note 2b) at dual operation (Note 3b) Single pulse avalanche energy (Note 4) Avalanche current (Note 1) Single-device operation (Note 3a)

Weight: 0.080 g (typ.)

Circuit Configuration
PD (1) 0.75 W PD (2) EAS IAR EAR Tch Tstg 0.45

46.8 6 0.1 150 55~150

mJ A mJ C C

Repetitive avalanche energy Single-device value at operation (Note 2a, Note 3b, Note 5) Channel temperature Storage temperature range

Note: For (Note 1), (Note 2a), (Note 2b), (Note 3a), (Note 3b), (Note 4) and (Note 5) please refer to the next page. This transistor is an electrostatic sensitive device. Please handle with caution.

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TPC8204
Thermal Characteristics
Characteristics Single-device operation (Note 3a) Symbol Rth (ch-a) (1) Rth (ch-a) (2) Rth (ch-a) (1) Rth (ch-a) (2) Max 83.3 Unit

Thermal resistance, channel to ambient (t = 10s) (Note 2a) Single-device value at dual operation (Note 3b)

114 C/W 167

Thermal resistance, channel to ambient (t = 10s) (Note 2b) Single-device value at dual operation (Note 3b)

Single-device operation (Note 3a)

278

Marking (Note 6)

TPC8204

Type Lot No.

Note 1: Please use devices on condition that the channel temperature is below 150C. Note 2: a) Device mounted on a glass-epoxy board (a)
FR-4 25.4 25.4 0.8 (Unit: mm)

b)

Device mounted on a glass-epoxy board (b)

FR-4 25.4 25.4 0.8 (Unit: mm)

(a)

(b)

Note 3: a) The power dissipation and thermal resistance values are shown for a single device (During single-device operation, power is only applied to one device.). b) The power dissipation and thermal resistance values are shown for a single device (During dual operation, power is evenly applied to both devices.). Note 4: VDD = 16 V, Tch = 25C (initial), L = 1.0 mH, RG = 25 , IAR = 6 A Note 5: Repetitive rating; pulse width limited by maximum channel temperature. Note 6: on lower right of the marking indicates Pin 1. Weekly code:(Three digits) Week of manufacture (01 for first week of year, continues up to 52 or 53) Year of manufacture (One low-order digits of calendar year)

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TPC8204
Electrical Characteristics (Ta = 25C)
Characteristic Gate leakage current Drain cutoff current Drainsource breakdown voltage Gate threshold voltage Symbol IGSS IDSS V (BR) DSS V (BR) DSX Vth RDS (ON) Drainsource ON resistance RDS (ON) RDS (ON) Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time |Yfs| Ciss Crss Coss tr VDS = 10 V, VGS = 0 V, f = 1 MHz Test Condition VGS = 10 V, VDS = 0 V VDS = 20 V, VGS = 0 V ID = 10 mA, VGS = 0 V ID = 10 mA, VGS = 12 V VDS = 10 V, ID = 200 A VGS = 2 V, ID = 3 A VGS = 2.5 V, ID = 3A VGS = 4 V, ID = 3 A VDS = 10 V, ID = 3 A Min 20 15 0.5 8.5 Typ. 22 19 16 17 2740 520 600 3 Max 10 10 1.2 45 30 20 pF S m V Unit A A V

Turnon time Switching time Fall time

ton

12

ns

tf

21

Turnoff time Total gate charge (gatesource plus gatedrain) Gatesource charge Gatedrain (miller) charge

toff Qg Qgs Qgd VDD 16 V, VGS = 5 V, ID = 6 A

102 31 24 7

nC

SourceDrain Ratings and Characteristics (Ta = 25C)

Characteristics Drain reverse current Pulse (Note 1) Symbol IDRP VDSF IDR = 6 A, VGS = 0 V Test Condition Min Typ. Max 24 1.2 Unit A V

Forward voltage (diode)

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RESTRICTIONS ON PRODUCT USE

000707EAA

TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the Handling Guide for Semiconductor Devices, or TOSHIBA Semiconductor Reliability Handbook etc.. The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (Unintended Usage). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customers own risk. The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. The information contained herein is subject to change without notice.

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