Lecture 16 MOSFET Equivalent Circuit Models

Outline L i l model d l Large-signal Low-frequency small-signal equivalent circuit model High-frequency g eque cy s small-signal all s g al equ equivalent vale t circuit c cu t model odel

Large Signal Model for NMOS Transistor

Regimes of operation:

 Cut-off Linear / Triode:

Saturation Regimes g of operation: p

Effect of back bias

Small signal device modeling Small-signal

In many applications, we are only interested in the response of the device to a small-signal applied on top of a bias.

Key Points: Small-signal is small response of non-linear components becomes linear Since response is linear, lots of linear circuit techniques such as superposition can be used to determine the circuit response. Notation: iD = ID + id ---Total = DC + Small Signal Mathematically:

With id linear on small-signal g drives: Define: gm transconductance [S] go output p or drain conductance [ [S] ] gmb backgate transconductance [S] Approach pp to computing p g gm, go, and gmb.

Transconductance
In saturation regime:

Then (neglecting channel length modulation) the transconductance is:

Rewrite in terms of ID:

Equivalent circuit model representation of gm:

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Output conductance
In saturation regime:

Then:

Output resistance is the inverse of output conductance:

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Remember also:

Hence: Equivalent circuit model representation of go:

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Backgate transconductance
In saturation regime (neglect channel length modulation):

Then Since

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Hence: Equivalent circuit representation of gmb:

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High-frequency small-signal equivalent circuit model

Need to add capacitances. In saturation:

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Cgs = channel charge g + overlap p capacitance p Cov, Cgd= overlap capacitance, Cov, CSb= source junction depletion capacitance (+sidewall) Cdb =drain junction depletion capacitance (+sidewall) ONLY Channel Ch l Charge Ch C Capacitance i i is i intrinsic i i to d device i operation. All others are parasitic.

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Inversion layer charge in saturation

Note that qN is total inversion charge in the channel & vC(y) is the channel voltage. But:

Then:

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Remember: Then:

Do integral, substitute iD in saturation and get:

Gate charge: Intrinsic gate-to-source gate to source capacitance:

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Must add overlap capacitance:

Gate-to-drain capacitance only overlap capacitance:

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0ther capacitances

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High-frequency small-signal equivalent circuit model of MOSFET

In saturation:

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