BC337 and BC338

Vishay Semiconductors
formerly General Semiconductor

Small Signal Transistors (NPN)

TO-226AA (TO-92)
0.142 (3.6)

Features
NPN Silicon Epitaxial Planar Transistors for switching and amplifier applications. Especially suited for AF-driver stages and low power output stages. These types are also available subdivided into three groups -16, -25, and -40, according to their DC current gain. As complementary types, the PNP transistors BC327 and BC328 are recommended. On special request, this transistor is also manufactured in the pin configuration TO-18.

0.181 (4.6) min. 0.492 (12.5) 0.181 (4.6)

Mechanical Data
Case: TO-92 Plastic Package Weight: approx. 0.18g Packaging Codes/Options: E6/Bulk 5K per container, 20K/box E7/4K per Ammo mag., 20K/box

max. 0.022 (0.55) 0.098 (2.5)

Dimensions in inches and (millimeters)

Bottom View

Maximum Ratings & Thermal Characteristics

Parameter Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Peak Collector Current Base Current Power Dissipation at Tamb = 25C Thermal Resistance Junction to Ambient Air Junction Temperature Storage Temperature Range BC337 BC338 BC337 BC338

Ratings at 25C ambient temperature unless otherwise specified.

Symbol VCES VCEO VEBO IC ICM IB Ptot RJA Tj TS

Value 50 30 45 25 5 800 1 100 625 200

(1) (1)

Unit V V V mA A mA mW C/W C C

150 65 to +150

Note: (1) Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case.

Document Number 88159 8-Mar-02

www.vishay.com 1

BC337 and BC338

Vishay Semiconductors
formerly General Semiconductor

Electrical Characteristics
Parameter

(TJ = 25C unless otherwise noted)

Symbol
Current gain group

Test Condition VCE = 1 V, IC = 100 mA

Min 100 160 250 60 100 170 45 20 50 30 5

Typ 160 250 400 130 200 320 2 2 100 12

Max 250 400 630

Unit

-16 -25 -40 hFE -16 -25 -40

DC Current Gain
Current gain group

VCE = 1 V, IC = 300 mA VCE = 45 V VCE = 25 V VCE = 45 V, Tamb = 125C VCE = 25 V, Tamb = 125C IC = 10 mA IC = 0.1 mA IE = 0.1 mA IC = 500 mA, IB = 50 mA VCE = 1 V, IC = 300 mA VCE = 5 V, IC = 10 mA f = 50 MHz VCB = 10 V, f = 1 MHz 100 100 10 10 0.7 1.2 nA nA A A V V V V V MHz pF

Collector-Emitter Cutoff Current

BC337 BC338 BC337 BC338 BC337 BC338 BC337 BC338

ICES

Collector-Emitter BreakdownVoltage Collector-Emitter BreakdownVoltage Emitter-Base Breakdown Voltage Collector Saturation Voltage Base-Emitter Voltage Gain-Bandwidth Product Collector-Base Capacitance

V(BR)CEO V(BR)CES V(BR)EBO VCEsat VBE fT CCBO

Ratings and Characteristic Curves (TA = 25C unless otherwise noted)

www.vishay.com 2

Document Number 88159 8-Mar-02

BC337 and BC338

Vishay Semiconductors
formerly General Semiconductor

Ratings and Characteristic Curves (TA = 25C unless otherwise noted)

Document Number 88159 8-Mar-02

www.vishay.com 3

BC337 and BC338

Vishay Semiconductors
formerly General Semiconductor

Ratings and Characteristic Curves (TA = 25C unless otherwise noted)

www.vishay.com 4

Document Number 88159 8-Mar-02

This datasheet has been download from: www.datasheetcatalog.com Datasheets for electronics components.