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Submodel: NPN2

NPN-BJT

NPN-BJT

Assumptions
This is a dynamic Gummel and Poon model of the bipolar transistor.

Interface
B E C

base emitter collector

External Parameters
IS = 1016 BF = 100 NF = 1 VAF = 1010 VA = VAF IKF = 1010 ISE = 0 C2 = ISE/IS NE = 1.5 BR = 1 NR = 1 VAR = 1010 VB = VAR IKR = 1010 ISC = 0 C4 = ISC/IS NC = 2 RE = 0 RB = 0 RBM = RB IRB = 1010 RC = 0 EG = 1.11 CJE = 0 VJE = 0.75 MJE = 0.33 [A] [A] [] [] [] [] [] [A] [] [eV] [F] [V] [] [A] [A] [] [] [] [] [V] [A] [] [] [V] transport saturation current ideal maximum forward beta forward current emission coefficient forward Early voltage (equal) forward-beta high-current roll-off "knee" current base-emitter leakage saturation current base-emitter leakage saturation coefficient base-emitter leakage emission coefficient ideal maximum reverse beta reverse current emission coefficient reverse Early voltage (equal) corner for reverse-beta high-current roll-off base-collector leakage saturation current base-collector leakage saturation coefficient base-collector leakage emission coefficient emitter ohmic resistance zero-bias (maximum) base resistance minimum base resistance current at which RB falls halfway to RBM collector ohmic resistance badgap voltage (barrier height) base-emitter zero-bias p-n capacitance base-emitter built-in potential base-emitter p-n grading factor
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CJC = 0 VJC = 0.75 MJC = 0.33 XCJC = 1 FC = 0.5 TF = 0 XTF = 0 VTF = 1010 ITF = 0 TR = 0 XTB = 0 XTI = 3 TRE1 = 0 TRE2 = 0 TRB1 = 0 TRB2 = 0 TRM1 = 0 TRM2 = 0 TRC1 = 0 TRC2 = 0 TNOM = 300 T = 300

[F] [V] [] [] [] [s] [] [V] [A] [s] [] []

base-collector zero-bias p-n capacitance base-collector built-in potential base-collector p-n grading factor fraction of CBC connected internal to RB forward-bias depletion capacitor coefficient ideal forward transit time transit time bias dependence coefficient transit time dependency on VBC transit time dependency on IC ideal reverse transit time forward and reverse beta temperature coefficient IS temperature effect exponents RE temperature coefficient (linear) RE temperature coefficient (quadratic) RB temperature coefficient (linear) RB temperature coefficient (quadratic) RBM temperature coefficient (linear) RBM temperature coefficient (quadratic) RC temperature coefficient (linear) RC temperature coefficient (quadratic)

[K] [K]

nominal temperature temperature

Description

The bipolar junction transistor model is an adaptation of the integral charge control model of Gummel
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and Poon. The direct current model is defined by the parameters IS, NF, ISE (or C2), NE, IKF, and BF, which determine the forward current gain characteristics; IS, NR, ISC (or C4) , NC, IKR, and BR, which determine the reverse current gain characteristics; and VA (or VAF, forward Early voltage) and VB (or VAR, reverse Early voltage), which determine the output conductance for forward and reverse regions. Three ohmic resistances, RB, RC, and RE, are included, where RB is high current dependent. Base charge storage is modeled by forward and reverse transit times, TF and TR, where TF is high current and bias dependent; and nonlinear depletion layer capacitances, which are determined by the parameters CJE, VJE, and ME for the B-E junction, CJC, VJC, and MC for the B-C junction. The temperature dependence of the saturation current, IS, is determined by the energy gap, EG, and the saturation current temperature exponent, XTI. The temperature dependence of the ideal current gains, BF and BR, is modeled by the gain temperature exponent, XTB. Static model

ICT VBE VBC IBE IBC IDf1 IDr1 IDf2 IDr2 ISS QB Q1 Q2

= ICC IEC

current source voltage across forward diodes

voltage across reverse diodes

= IDf1 + IDf2 = IDr1 + IDr2

current through both forward diodes current through both reverse diodes current through Df 1 current through Dr1 current through Df 2 current through Dr2

= IS (0) Calculation of QB :

zero-bias constant

normalized majority base charge

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; added in all regions of operation

Current dependence of base resistance :

RBB

IB VBC VBE Vt q k

= IBE + IBC = VBi VCi = VBi VEi mV = 1.60 * 1019 As

base current voltage between internal base and internal collector voltage between internal base and internal emitter thermal voltage electron charge conductance to aid convergence

= 1.38 * 1023 J/K Boltzmanns constant

GMIN = 1 * 1012 S
Dynamic model

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B-E diffusion capacitance :

CDE
B-C diffusion capacitance :

CDC
B-E junction capacitance :

CJEB

B-C junction capacitance :

CJCB

Distributed B-C capacitance :

CJX

TF modulation (transit charge) :

TFF

VBX = VB VCi voltage between external base and internal collector F1 = (1 FC)(1 + MJE) F2 = (1 FC)(1 + MJE) F3 = 1 FC(1 + MJC) F4 = 1 FC(1 + MJC)
Thermal model constant constant constant constant

IS (T) EG(T) VJE(T) VJC(T) BF(T)

= VJE * TRATIO 2Vt log [(TRATIO)1.5] [TRATIO * EG EG(T)] = VJC * TRATIO 2Vt log [(TRATIO)1.5] [TRATIO * EG EG(T)] = BF * (T )XTB RATIO
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BR(T) C2(T) C4(T) CJE(T) CJC(T) RE(T) RB(T) RC(T)

= BR * (T )XTB RATIO

= RE[1 + TRE1(T TNOM ) + TRE2(T TNOM )2] = RB[1 + TRB1(T TNOM ) + TRB2(T TNOM )2] = RC[1 + TRC1(T TNOM ) + TRC2(T TNOM )2]

RBM (T) = RBM [1 + TRM 1(T TNOM ) + TRM 2(T TNOM )2] TRATIO Data
:16.12.99,jw,10.2.00 :: NPN-BJT NPN2:: Gummel and Poon model B, :: base E, :: emitter C/ :: collector :(default values result in an ideal transistor) : Static model parameters IS = 1E-16, ::[A] transport saturation current BF = 100, ::[-] ideal maximum forward beta NF = 1, ::[-] forward current emission coefficient VAF = 1E10, ::[V] forward Early voltage VA = VAF, :: (equal) IKF = 1E10, ::[A] forward-beta high-current roll-off "knee" current ISE = 0, ::[A] base-emitter leakage saturation current C2 = ISE/IS, ::[-] base-emitter leakage saturation coefficient NE = 1.5, ::[-] base-emitter leakage emission coefficient BR = 1, ::[-] ideal maximum reverse beta NR = 1, ::[-] reverse current emission coefficient VAR = 1E10, ::[V] reverse Early voltage VB = VAR, :: (equal) IKR = 1E10, ::[A] corner for reverse-beta high-current roll-off ISC = 0, ::[A] base-collector leakage saturation current C4 = ISC/IS, ::[-] base-collector leakage saturation coefficient NC = 2, ::[-] base-collector leakage emission coefficient RE = 0, ::[Ohm] emitter ohmic resistance RB = 0, ::[Ohm] zero-bias (maximum) base resistance RBM = RB, ::[Ohm] minimum base resistance IRB = 1E10, ::[A] current at which RB falls halfway to RBM RC = 0, ::[Ohm] collector ohmic resistance EG = 1.11, ::[eV] badgap voltage (barrier height) : Large-signal model parameters
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CJE = 0, ::[F] base-emitter zero-bias p-n capacitance VJE = 0.75, ::[V] base-emitter built-in potential MJE = 0.33, ::[-] base-emitter p-n grading factor CJC = 0, ::[F] base-collector zero-bias p-n capacitance VJC = 0.75, ::[V] base-collector built-in potential MJC = 0.33, ::[-] base-collector p-n grading factor XCJC= 1, ::[-] fraction of CBC connected internal to RB FC = 0.5, ::[-] forward-bias depletion capacitor coefficient TF = 0, ::[s] ideal forward transit time XTF = 0, ::[-] transit time bias dependence coefficient VTF = 1E10, ::[V] transit time dependency on VBC ITF = 0, ::[A] transit time dependency on IC TR = 0, ::[s] ideal reverse transit time : Parameters for temperature effects XTB = 0, ::[-] forward and reverse beta temperature coefficient XTI = 3, ::[-] IS temperature effect exponents TRE1= 0, ::[(Deg C)^-1] RE temperature coefficient (linear) TRE2= 0, ::[(Deg C)^-2] RE temperature coefficient (quadratic) TRB1= 0, ::[(Deg C)^-1] RB temperature coefficient (linear) TRB2= 0, ::[(Deg C)^-2] RB temperature coefficient (quadratic) TRM1= 0, ::[(Deg C)^-1] RBM temperature coefficient (linear) TRM2= 0, ::[(Deg C)^-2] RBM temperature coefficient (quadratic) TRC1= 0, ::[(Deg C)^-1] RC temperature coefficient (linear) TRC2= 0, ::[(Deg C)^-2] RC temperature coefficient (quadratic) TNOM= 300, ::[K] nominal temperature :(at which all input data is assumed to have been measured) T = 300; ::[K] temperature :Constants q = 1.6021892E-19;:[As] electron charge k = 1.380662E-23; :[J/K] Boltzmann's constant GMIN= 1E-12; :[S] conductance to aid convergence VT = k*T/q; :[V] thermal voltage SYSVAR Iec, Icc, VBC, VBE; VBX = V.B - V.Ci; :(for CJX) temp/exp/ C = -(q*EG)/k;:(for thermal effects) VTSF = -5*VT*NF; :(for QB) VTSR = -5*VT*NR; FCVJE = FC*VJE; :(for cap.) FCVJC = FC*VJC; IKFp = IKF + (1E10)*(IKF=0);:(zero protection) IKRp = IKR + (1E10)*(IKR=0); VAp = VA + (1E10)*(VA=0); VBp = VB + (1E10)*(VB=0); VTFp = VTF + (1E10)*(VTF=0); :Temperature dependencies TRATIO= T/TNOM; :temp. ratio IST = IS*(TRATIO)**XTI*temp(1/T - 1/TNOM);:Is(T) EGT = 1.16 - (7.02E-4)*(T**2)/(1108+T); :EG(T) VJET = VJE*TRATIO - 2*Vt*log(TRATIO**1.5) - (TRatio*EG-EGT); :VJE(T) VJCT = VJC*TRATIO - 2*Vt*log(TRATIO**1.5) - (TRatio*EG-EGT); :VJC(T) BFT = BF*TRATIO**XTB; :beta-forward(T) BRT = BR*TRATIO**XTB; :beta-reverse(T) C2T = C2*TRATIO**(-XTB)*((IST/IS)**(1/NE)); :C2(T) C4T = C4*TRATIO**(-XTB)*(IST/IS)**(1/NC); :C4(T) CJET = CJE*(1 + MJE*((400E-6)*(T-TNOM) - (VJET-VJE)/VJE));
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CJCT = CJC*(1 + MJC*((400E-6)*(T-TNOM) - (VJCT-VJC)/VJC)); FCVJET= FCVJE*VJET/VJE; FCVJCT= FCVJC*VJCT/VJC; RET = RE*(1 + TRE1*(T-TNOM) + TRE2*(T-TNOM)**2); RBT = RB*(1 + TRB1*(T-TNOM) + TRB2*(T-TNOM)**2); RBMT = RBM*(1 + TRM1*(T-TNOM) + TRM2*(T-TNOM)**2); RCT = RC*(1 + TRC1*(T-TNOM) + TRC2*(T-TNOM)**2); :Calculation of QB ISS = IST; :ISS=IS(0) fr/exp/ C=1/(Vt*NR), D=-1, L=VTSR, U=20; ff/exp/ C=1/(Vt*NF), D=-1, L=VTSF, U=20; Q1 = 1/abs(1 - VBC/VAp - VBE/VBp); Q2 = IST*((ff(VBE)/IKFp - 1/IKRp)*((VBE>VTSF)&(VBC<=VTSR)):active + (fr(VBC)/IKRp - 1/IKFp)*((VBE<=VTSF)&(VBC>VTSR)):inverse + (ff(VBE)/IKFp + fr(VBC)/IKRp)*((VBE>VTSF)&(VBC>VTSR)):saturated - (IKFp + IKRp)/(IKFp*IKRp)*((VBE<=VTSF)&(VBC<=VTSR))):off + (VBE/IKFp + VBC/IKRp)*GMIN; :GMIN QB = Q1/2*(1 + sqrt(1 + 4*abs(Q2)));:normalized majority base charge :Substitute circuit (transport model) lnr/log/ B=Vt*NR, C=QB/ISS, D=1, L=0, U=10; lnf/log/ B=Vt*NF, C=QB/ISS, D=1, L=0, U=10; 0 = lnr(Iec) - VBC; 0 = lnf(Icc) - VBE; Dr > E Bi-Ci = VBC;:B-C diode (reverse) Df > E Bi-Ei = VBE;:B-E diode (forward) 0 = -I.Dr + Iec/BR + C4T*Iss*fr(VBC*NR/NC); 0 = -I.Df + Icc/BF + C2T*Iss*ff(VBE*NF/NE); ICT > J Ci-Ei = Icc - Iec;:current source :Current dependence of base resistance IB = abs(I.Dr + I.Df); z1 = 1 + 144*IB/(1PI**2*IRB); z = (-1 + sqrt(z1))/(24*sqrt(IB/IRB)/(1PI**2))*(IRB<0 + IRB>0); RBB = RBMT + ((RBT - RBMT)/QB)*(IRB=0) + (3*(RBT - RBMT)*(tan(z) - z)/(z*tan(z)**2))*(IRB<0 + IRB>0); Rei > R E-Ei = RET; Rbi > R B-Bi = RBB; Rci > R C-Ci = RCT; :TF modulation (transit charge) TFF = TF*(1 + XTF*(ICC/(ICC + ITF))**2*exp(VBC/(1.44*VTFp))); :Capacitances (Sp.p.69) F1 = abs(1 - FC)**(1 + MJE); F2 = 1 - FC*(1 + MJE); F3 = abs(1 - FC)**(1 + MJC); F4 = 1 - FC*(1 + MJC); CDE = TFF*(Icc%VBE);:B-E diffusion cap. CJEB= CJET*((abs(1 - VBE/VJET)**(-MJE))*(VBE<FCVJET) + (1/F1*(F2 + MJE*VBE/VJET)*(VBE>=FCVJET))); :B-E junction (=depletion) cap. CBE = CDE + CJEB; :B-E cap. CDC = TR*(Iec%VBC); :B-C diffusion cap. CJCB= CJCT*((abs(1 - VBC/VJCT)**(-MJC))*(VBC<FCVJCT) + (1/F3*(F4 + MJC*VBC/VJCT)*(VBC>=FCVJCT))); :B-C junction cap. CBC = CDC + CJCB; :B-C cap. :Distributed base-collector cap. CJX = CJCT*(1 - XCJC)*(abs(1 - VBX/VJCT)**(-MJC)*(VBX<FCVJCT) + 1/F3*(F4 + MJC*VBX/VJCT)*(VBX>=FCVJCT));
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Cr > C Bi-Ci = CBC;:B-C cap. Cf > C Bi-Ei = CBE;:B-E cap. Cx > C B-Ci = CJX;:distrib. B-C cap. EO@;

Validation
Files that make use of this model: NPN2 BJT-Characteristic, IC = f (VCE , IB) NPN2 BJT-Characteristic, TFF(IC) NPN2 BJT-Characteristic, IC = f (VCE , IB , RC) NPN2 BJT inverter switching speed Single stage BJT amplifier : npnchar1.prb : npnchar2.prb : npnchar3.prb : invert.prb : amp.prb

Origin
This model is similar to the Gummel and Poon model implemented in SPICE2 and in PSPICE. Wolff J. [1] Getreu I. : Modeling The Bipolar Transistor . Tektronix Inc., Beaverton, Oregon 1976, pp.69-123. [2] Massobrio G., Antognetti P. : Semiconductor Device Modeling with SPICE. Second edition, McGraw-Hill Inc. 1993, pp.74-107.

Last Update
May 12, 2005

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