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MCC 161

MCD 161

High Voltage Thyristor Module ITRMS = 2x300 A


ITAVM = 2x165 A
VRRM = 2000-2200 V

VRSM VRRM Type MCC 3 6 7 1 5 4 2 6 7


3
VDSM VDRM 2 4
5
1
V V
2100 2000 MCC 161-20io1 MCD 161-20io1
2300 2200 MCC 161-22io1 MCD 161-22io1 MCD 3 1 54 2

Symbol Conditions Maximum Ratings Features


ITRMS TVJ = TVJM 300 A • International standard package
ITAVM TC = 85°C; 180° sine 165 A • Direct Copper Bonded Al2O3-ceramic
base plate
ITSM TVJ = 45°C; t = 10 ms (50 Hz) 6000 A
• Planar passivated chips
VR = 0 t = 8.3 ms (60 Hz) 6400 A
• Isolation voltage 3600 V~
TVJ = TVJM; t = 10 ms (50 Hz) 5250 A • UL registered, E 72873
VR = 0 t = 8.3 ms (60 Hz) 5600 A • Keyed gate/cathode twin pins
I2dt TVJ = 45°C; t = 10 ms (50 Hz) 180000 A2s
VR = 0 t = 8.3 ms (60 Hz) 170000 A2 s Applications

TVJ = TVJM; t = 10 ms (50 Hz) 137000 A2s • Motor control


VR = 0 t = 8.3 ms (60 Hz) 128000 A2 s • Power converter
• Heat and temperature control for
(di/dt)cr TVJ = TVJM; repetitive, IT = 500 A 150 A/µs industrial furnaces and chemical
f = 50 Hz; tP = 200 µs; processes
VD = 2/3 VDRM; • Lighting control
IG = 0.5 A; non repetitive, IT = ITAVM 500 A/µs • Contactless switches
diG/dt = 0.5 A/µs
(dv/dt)cr TVJ = TVJM; VDR = 2/3 VDRM 1000 V/µs Advantages
RGK = ∞; method 1 (linear voltage rise) • Space and weight savings
PGM TVJ = TVJM; tP = 30 µs 120 W • Simple mounting
IT = ITAVM; tP = 500 µs 60 W • Improved temperature and power
PGAV 8 W cycling
• Reduced protection circuits
VRGM 10 V
TVJ -40...125 °C
TVJM 125 °C
Tstg -40...125 °C
VISOL 50/60 Hz, RMS; t = 1 min 3000 V~
IISOL < 1 mA; t=1s 3600 V~
Md Mounting torque (M6) 2.25-2.75 Nm
Terminal connection torque (M6) 4.5-5.5 Nm
Weight Typical including screws 125 g
Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated
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IXYS reserves the right to change limits, test conditions and dimensions

© 2005 IXYS All rights reserved 1-3


MCC 161
MCD 161

Symbol Conditions Characteristic Values


IRRM, IDRM VR = VRRM; TVJ = TVJM 40 mA
VT IT = 300A; TVJ = 25°C 1.36 V
VT0 For power-loss calculations only (TVJ = TVJM) 0.8 V
rT 1.6 mΩ
VGT VD = 6 V; TVJ = 25°C 2 V
TVJ = -40°C 2.6 V
IGT VD = 6 V; TVJ = 25°C 150 mA
TVJ = -40°C 200 mA
VGD VD = 2/3VDRM; TVJ = TVJM 0.25 V
IGD VD = 2/3VDRM; TVJ = TVJM 10 mA
IL TVJ = 25°C; VD = 6 V; tP = 30 µs 200 mA
diG/dt = 0.45 A/µs; IG = 0.45 A
IH TVJ = 25°C; VD = 6 V; RGK = ∞ 150 mA
tgd TVJ = 25°C; VD = 1/2 VDRM 2 µs
diG/dt = 0.5 A/µs; IG = 0.5 A
tq TVJ = TVJM; VR = 100 V; VD = 2/3VDRM; tP = 200 µs typ. 150 µs Fig. 1 Gate trigger characteristics
dv/dt = 20 V/µs; IT = 160 A; -di/dt = 10A/µs
QS TVJ = TVJM 550 µC
IRM -di/dt = 50 A/µs; IT = 300 A 235 A
RthJC per thyristor; DC current 0.155 K/W
per module 0.078 K/W
RthJK per thyristor; DC current 0.225 K/W
per module 0.113 K/W
dS Creeping distance on surface 12.7 mm
dA Creepage distance in air 9.6 mm
a Maximum allowable acceleration 50 m/s2

Dimensions in mm (1 mm = 0.0394")

Fig. 2 Gate trigger delay time

500
IT,
450
A
IF
400

350

300

250

200

150
TVJ = 125°C
100
TVJ = 25°C
50

0
Optional accessories for modules 0.0 0.5 1.0 1.5 V 2.0
Keyed gate/cathode twin plugs with wire length = 350 mm, gate = yellow, cathode = red VT, VF
Type ZY 180L (L = Left for pin pair 4/5) UL 758, style 1385, Fig 3: Forward current vs. voltage
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Type ZY 180R (R = right for pin pair 6/7) CSA class 5851, guide 460-1-1 drop per thyristor/diode

© 2005 IXYS All rights reserved 2-3


MCC 161
MCD 161

6000 106 350


50 Hz 2
80% VRRM It A
5000 300 DC
2
As
A ITAVM,
I 250
ITSM4000
, FAVM

IFSM
TVJ = 45°C TVJ = 45°C 200 180° sin
3000 105 120° rect
150
TVJ = 125°C
2000 60° rect
100
30° rect
TVJ = 125°C
1000
50

0 104 0
0.001 0.01 0.1 ms 1 1 s 10 0 25 50 75 °C
100 125
t t TC
Fig. 4: Surge overload current Fig. 5: I2t versus time per diode Fig. 6: Max. forward current at case
ITSM, IFSM = f(t) temperature ITAVM/FAVM = f (TC,d)

400 2000
RthKA K/W RthKA K/W
W
360 0.1 W
1800 0.02
Ptot Ptot
0.2 0.04
320 1600
0.3 0.06
280 0.5 1400 0.1
0.8 0.15
240 1200
1.5 0.20
200 2 1000 0.30
DC
160 180° sin 800
120° rect
120 600
60° rect
80 30° rect 400

40 200

0 0
0 50 100 150 200
A 250 0 25 50 75 C
100 125 0 100 200 300 400 A 0 25 50 75 C
100 125
IFAVM, ITAVM TA IDAVM TA
Fig. 7: Power dissipation vs. on-state current and ambient Fig. 8: Power dissipation vs. direct output current and
temperature (per thyristor/diode) ambient temperature (three phase rectifier bridge)

0.3
RthJC for various condition angles:
K/W d RthJC (K/W)
DC_ 0.155
180° 0.171
0.2
120° 0.184
ZthJC
60° 0.222
30° 0.294

0.1
Constants for ZthJC calculation (DC):
30°
60° i Rthi (K/W) ti (s)
120°
180° 1 0.012 0.00014
DC 2 0.008 0.019
0.0
3 0.03 0.18
10-3 10-2 10-1 100 101 s 102 4 0.073 0.52
t 5 0.032 1.6
Fig. 9: Transient thermal impedance junction to case ZthjC
at various conduction angles
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© 2005 IXYS All rights reserved 3-3

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