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EEE 591: Analog Integrated Circuits

Srikanth Paramaiahgari

ASU ID# 1206321047

LOW DROP OUT REGULATOR DESIGN (PART-1)


Objective: Open Loop Amplifier circuit design with gain of 50-60 dB and basic feedback analysis of LDO circuit. Schematic:

EEE 591: Analog Integrated Circuits

Srikanth Paramaiahgari

ASU ID# 1206321047

EEE 591: Analog Integrated Circuits

Srikanth Paramaiahgari

ASU ID# 1206321047

Maximum current to the load=50 mA Reason for Using PMOS buffer and PMOS pass transistor: PMOS Buffer: PMOS buffer is used because there will be better matching between the cascade amplifier stage and the Buffer stage. PMOS buffer is preferred as substrate and source are at same potential and in NMOS source and bulk are at different potential. Pass Transistor PMOS pass transistor is used since Vin and Vreg vary by small amount (.25V) and NMOS cannot be used as gate voltage (2.25+Vtn) needed for this purpose have to be greater than maximum voltage available i.e. 2.5V and it requires a charge pump. DC biasing of the amplifier and theoretical calculation of AC gain is shown in the next page.

EEE 591: Analog Integrated Circuits

Srikanth Paramaiahgari

ASU ID# 1206321047

EEE 591: Analog Integrated Circuits

Srikanth Paramaiahgari

ASU ID# 1206321047

EEE 591: Analog Integrated Circuits

Srikanth Paramaiahgari

ASU ID# 1206321047

EEE 591: Analog Integrated Circuits AC analysis:

Srikanth Paramaiahgari

ASU ID# 1206321047

As observed from the above plot, the low frequency small signal gain is 56.02 dB and the 3 dB bandwidth is 817.8 KHz.

EEE 591: Analog Integrated Circuits Rin:

Srikanth Paramaiahgari

ASU ID# 1206321047

Rout:

EEE 591: Analog Integrated Circuits

Srikanth Paramaiahgari

ASU ID# 1206321047

EEE 591: Analog Integrated Circuits

Srikanth Paramaiahgari

ASU ID# 1206321047

EEE 591: Analog Integrated Circuits

Srikanth Paramaiahgari

ASU ID# 1206321047

EEE 591: Analog Integrated Circuits

Srikanth Paramaiahgari

ASU ID# 1206321047

Simulation Vs Hand Analysis: AC analysis: Gain Hand Analysis simulation 57.01 dB 56.02 dB Rin 1.4 G Ohms Rout 6.39 M Ohms 6 M Ohms Bandwidth 156 KHz 817 KHz

Differences in simulations when compared to theoretical calculations are due to approximations made in the Gain, Rout and Cout Equations. And also the body effect and channel length modulation effects are ignored. Some optimizations were made in the circuit to achieve the gain of 56 dB. The cascode stage transistors Veff was decreased from 100 mV to 80 mV so as to increase the gain.

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