10246

021021061

Analysis and Optimum Design of On-Chip Inductor for RF ICs

2005 4 20

Analysis and Optimum Design of On-Chip Inductor for RF ICs

by
Hongyan Jian
B.S. (Shaanxi Normal University, Xian) 1992
M.S. (Ocean University of China, Qingdao) 1996
A dissertation submitted in partial satisfaction of the
requirements for the degree of
Doctor of Philosophy
in
Microelectronics
in the
GRADUATE DIVISION
of the
FUDAN UNIVERSITY, SHANGHAI
Committee in charge:
Professor Hao Min
Professor Zhiliang Hong
Professor Junyan Ren
Professor Lianxing Yang

Spring 2005
Copyright Spring 2005, by Hongyan Jian
ALL RIGHTS RESERVED

1.1

1.2

1.3
1.3.1

1.3.2

1.3.3
1.4

2.1

10

2.1.1

10

2.1.2

11

2.1.3

12

2.1.4

13

2.2

13

2.2.1

13

2.2.2

15

2.2.3
2.3
2.3.1

16

17
17

2.3.1.1

18

2.3.1.2

20

2.3.2
2.3.3

22

2.3.4
2.4
2.4.1

33

33
34

2.4.2
2.4.2.1

34
35

2.4.2.2
2.4.3

37

40

26

2.5
2.5.1

43

2.5.1.1

43

2.5.1.2

43

2.5.2

48

2.5.2.1

48

2.5.2.2

49

2.5.3

50

2.5.4
2.6

51

51

42

50

3.1

55

3.1.1
3.1.2
3.1.3 58

55

3.2

57

60

3.2.1

60

3.2.2

62

3.2.3

63

3.3 64
3.3.1 64
3.3.1.1

64

3.3.1.2

65

3.3.2

66

3.3.2.1

66

3.3.2.2

69

3.3.2.3
3.4

75
75

3.4.1

3.4.2
3.4.3 78
3.5

3.5.1

79
79
ii

76

72

3.5.2 80
3.5.3 pn
3.5.4 83
3.6

83

84

82

4.1

88

4.1.1

89

4.1.2

91

4.2

93

4.2.1

93

4.2.2
4.2.3

94

97

4.2.4 99
4.2.5

100

4.2.5.1
4.2.5.2

100

101

4.2.6
4.2.6.1

106

pn

4.2.6.2

107

107

4.2.6.3
4.3

110

111

5.1

112

5.2 113
115

118

119

120

122

iii

109

VCO

0.35m4

9.9nH1.3nH
1nH434
12Qmax
34Qmax 210

40
CMOSnppn

p n

pn19

iv

Analysis and Optimum Design of On-Chip Inductor for RF ICs

Abstract
The wireless communication revolution has spawned a revival of interest in the design
and optimization of radio transceivers. On-chip inductors are important,
performance-limiting, large die area components in monolithic radio frequency (RF)
circuits, such as voltage-controlled oscillators (VCO), low-noise amplifiers and
passive-element filters.
Although numerous results of on-chip inductors have been reported, the basic
understanding of performance limitations and the procedures for optimizing the quality
factor (Q) are insufficient. Most published inductor models rely on numerical techniques,
which are not intuitive enough to provide the insight needed in a design process. This
dissertation presents physical models that address the electromagnetic phenomena and
parasitics important to the behavior of on-chip inductors. Guidelines for the optimum
inductor design are proposed from the point of view of the integrated circuits (ICs) design
and technology.
Inductors have been fabricated in a 0.35m two-poly four-metal CMOS technology for
validating the some proposed techniques and theories without altering technology to
improve the Q of the inductor and circuits in this dissertation.
Based on the guidelines of the distributed capacitance mode and coupling coefficient
formula, the stacked and planar inductors are designed. Using the close die area of the
planar inductor with 1.34nH, the stacked inductor realizes 9.9nH inductance. Realizing 1nH
inductance, the die area of the four-layer-interconnect series inductor only is the quarter of
that of the planar spiral inductor. The maximum Q of the inductor that designed by metal
3//metal 4 in series with metal 1//metal 2 is 110 greater than that of the planar inductor
with same inductance.
The electromagnetic theory indicates that the metal with small cross-area has the weak
skin effect and the inductors with the less ratio the turn width of the space between turns
have weak proximity effect. Thus, the one turn metal of the inductor is divided into
multi-shunt tracks with the same impedance, and then the maximum Q has 40%
improvement.
Dual pn junctions in lateral and vertical directions are formed by diffusing the p+ on
the patterned n-well in standard CMOS technology, which are inserted under the inductor.
The p+-diffusion layer is grounded to shield the substrate from the electric field of inductor,
the width of the depletion regions of the lateral and vertical pn junctions are changed by
increasing the voltage applied to the n-wells, and then quality factor is improved by 19%.
This phenomenon validates the physical models of the electric field and magnetic field
losses of the on-chip inductors in the substrate.
Key Wards: On-chip inductor, quality factor, self-resonant frequency, planar spirals, stacked
inductor, series resistance, parasitical capacitance, substrate loss, optimum design, on-wafer
measurement
v

1.1

BiCMOS
(GaAs) CMOS
PCB

CMOS fT
GaAs CMOS CMOS
CMOS
GHz
CMOS

[1.1]
PCB
10
LC
CMOS IC
IC PCB
PCB

PCB
RLC
PCB RLC
PCB

0.8-2.5GHz
1-25nH
225 10nH
IC
50

1.2

0.8 2.5GHz

L T.H. Lee
[1.2]LNA[1.3-1.4][1.5-1.6][1.7-1.8]

GHz
LC VCOVCO
LC [1.9-1.10]
[1.2,1.11]
[1.12]
[1.13]

1.3

1.3.1

Q
1
2
3

[1.141.15]

1.1

Q30
600.5 - 4nH

[1.161.17]

1.1

1.2 CMOS

1.2 IC
pH nH

Tony Yeung[1.18]
Soorapanth, T [1.12]

1.3.2

Chik Patrick Yue[1.1]

Sunderarajan S. Mohan[1.18]
Ali M. Niknejad [1.21]
ASITICAdam C. Watson [1.22]
1960
1990 Nguyen Meyer

RF IC
GaAs

150-200m

CMOS

[1.22]

[1.21, 1.231.24]

[1.25

1.27]

[1.281.31]

EDA

1.3.3

CMOS
CMOS

1.3 [1.32]
2

1.3

CMOS

1.4

1
2Z

4LITZ

5pn

LC CVO
pn
LC VCO
LCR

pn

LCR

[1.1] Chik Patrick Yue. On-chip spiral inductors for silicon-based radio-frequency integrated circuits [D].
A dissertation of the department of electrical engineering of STANFORD University for the doctor
philosophy, 1998.
[1.2] T.H. Lee. The Design of CMOS Radio-Frequency Integrated Circuits [M]. New York, New York:
Cambridge University Press, 1998.
[1.3] Gramegna, G.; Paparo, M.; Erratico, P.G.; De Vita, P.. A sub-1-dB NF2.3-kV ESD-protected
900-MHz CMOS LNA [J]. IEEE Journal of Solid-State Circuits, 2001, 36(7):1010 1017.
[1.4] Egels, M.; Gaubert, J.; Pannier, P.; Bourdel, S.. Design method for fully integrated CMOS RF LNA
[J]. Electronics Letters, 2004, 40 (24):1513 1514.
[1.5] Vauhkonen, A.; Tarvainen, E.. Inductors allow low-voltage performance for IC mixers [C]. IEEE
International Conference on Electronics, Circuits and Systems, 1998, 1(9):329 332.
[1.6] Tae Wook Kim; Bonkee Kim; Lee, K. A new mixer linearization method and optimization of
integrated inductor for single balance mixer LO buffer [C]. IEEE Radio Frequency Integrated
Circuits (RF IC) Symposium, 2004. Digest of Papers. 2004, 6-8(6):43 46.
[1.7] Burghartz, J.N.; Soyuer, M.; Jenkins, K.A.; Hulvey, M.D.. High-Q inductors in standard silicon
interconnect technology and its application to an integrated RF power amplifier [C]. International
Electron Devices Meeting, 1995, 10-13(9):1015 1018.
[1.8] Gupta, R.; Ballweber, B.M.; Allstot, D.J. Design and optimization of CMOS RF power amplifiers
[J]. IEEE Journal of Solid-State Circuits, 2001, 36(2):166 175.

[1.9] Joonho Gil; Seong-Sik Song; Hyunjin Lee; Hyungcheol Shin. A -119.2 dBc/Hz at 1 MHz, 1.5 mW,
fully integrated, 2.5-GHz, CMOS VCO using helical inductors [J]. IEEE Microwave and Wireless
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459.
[1.10] Yong Zhan; Harjani, R.; Sapatnekar, S.S.. On the selection of on-chip inductors for the optimal
VCO design [C] Proceedings of the IEEE Custom Integrated Circuits Conference, 2004
3-6(10) :277 280.
[1.11] Mohan, S.S.; Hershenson, M.D.M.; Boyd, S.P.; Lee, T.H. . Bandwidth extension in CMOS with
optimized on-chip inductors [J]. IEEE Journal of Solid-State Circuits, 2000, 35(3):346 355.
[1.12] Soorapanth, T.; Wong, S.S. A 0-dB IL 214030 MHz bandpass filter utilizing Q-enhanced spiral
inductors in standard CMOS [J]. IEEE Journal of Solid-State Circuits, 2002, 37(5):579 586.
[1.13] Niranjan Talwalkar. Integrated CMOS Transmit-Receive Switch Using On-Chip Spiral Inductors
[D]. A DISSERTATION FOR THE DEGREE OF DOCTOR OF PHILOSOPHY OF THE
DEPARTMENT OF ELECTRICAL ENGINEERING OF STANFORD UNIVERSITY, 2004.
[1.14] Lucyszyn, S.; Robertson, I.D. Monolithic narrow-band filter using ultrahigh-Q tunable active
inductors [J]. IEEE Transactions on Microwave Theory and Techniques, 1994, 42(12):2617
2622.
[1.15] Curtis Leifso, James W.Haslett, John G.McRory. Monolithic tunable active inductor with
independent Q control [J]. IEEE Trans. Microwave theory and techniques, 2000, 48(6): 1024
1029.
[1.16] Francesco Svelto and Rinaldo Castello. A bond-wire inductor-MOS varactor VCO tunable from 1.8
to 2.4 GHz [J]. IEEE Trans. Microwave theiry and techniques,2002, 50(1):403-407.
[1.17] Dec, A.; Suyama, K. A 1.9-GHz CMOS VCO with micromachined electromechanically tunable
capacitors [J]. IEEE Journal of Solid-State Circuits, 35(8): 1231 1237.
[1.18] Tony Yeung. Analysis and Design of On-chip Spiral Inductors and Transformers for Silicon RF
Integrated Circuits [D] A thesis for Master of Philosophy in Electrical and Electronic Engineering
at The Hong Kong University of Science and Technology in December 1998.
[1.19] Sunderarajan S. Mohan. The design, modeling and optimization of on-chip inductor and
transformer circuits [D]. A dissertation of the department of electrical engineering of STANFORD
University for the doctor philosophy, 1999.
[1.20] Ali M. Niknejad. Analysis, Simulation, and Applications of Passive Devices on Conductive
Substrates [D]. A dissertation for the degree of Doctor of Philosophy in EngineeringElectrical
Engineering and Computer Science in the UNIVERSITY of CALIFORNIA at BERKELEY, 2000.
[1.21] Adam C. Watson. Analysis and Modeling of Single-Ended and Differential Spiral Inductors in

Silicon-Based RFICs [J]. A thesis for the degree of Master of Science of Oregon State University
in June 2004.
[1.22] Niknejad A M. Analysis, Design, and Optimization of Spiral Inductors and Transformers for Si
RF Ics [D]. Master Thesis, University of California, Berkeley, Spring 1997.
[1.23] Yu Cao; Groves, R.A.; Xuejue Huang; Zamdmer, N.D.; Plouchart, J.-O.; Wachnik, R.A.; Tsu-Jae
King; Chenming Hu. Frequency-independent equivalent-circuit model for on-chip spiral inductors
[J]. IEEE Journal of Solid-State Circuits, 2003,38(3):419 426.
[1.24] Scuderi, A.; Biondi, T.; Ragonese, E.; Palmisano, G.. A lumped scalable model for silicon
integrated spiral inductors [J] IEEE Transactions on Circuits and Systems I: Regular Papers, [see
also IEEE Transactions on Circuits and Systems I: Fundamental Theory and Applications,], 2004,
51(6):1203 1209.
[1.25] Tiemeijer, L.F.; Leenaerts, D.; Pavlovic, N.; Havens, R.J. Record Q spiral inductors in standard
CMOS [C] International Electron Devices Meeting, 2001. IEDM Technical Digest. , 2001,
32-5(9):40.7.1 - 40.7.
[1.26] Jan Craninckx, and Michiel S. J. Steyaert. A 1.8-GHz Low-Phase-Noise CMOS VCO Using
Optimized Hollow Spiral Inductors [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1997,
32(5):736-744.
[1.27] Lopez-Villegas, J.M.; Samitier, J.; Cane, C.; Losantos, P.; Bausells, J. . Improvement of the quality
factor of RF integrated inductors by layout optimization [J]. IEEE Transactions on Microwave
Theory and Techniques, 2000, 48(1): 76 83.
[1.28] Zolfaghari, A. Chan, and B. Razavi. Stacked Inductors and Transformers in CMOS Technology [J].
IEEE J. Solid-State Circuits, 2001, 36(4):620-628.
[1.29] Chih-Chun Tang; Chia-Hsin Wu; Shen-Iuan Liu. Miniature 3-D inductors in standard CMOS
process[ J]. IEEE J. Solid-State Circuits, 2002, 37(4):471 480.
[1.30] Chia-Hsin Wu,Chih-Chun Tang and Shen-Iuan Liu. Analysis of on-chip spiral inductors using the
distributed capacitance model [J]. IEEE J. Solid-State Circuits, 2003, 38(6):1040-1044.
[1.31] Hongyan Jian, Zhangwen Tang, Jie He, Hao Min. Analysis of Self-resonant Frequency for
Differential-driven Symmetric and Single-ended Inductors. 2004, A3.13(10):194-197.
[1.32] Sen, P.; Garg, V.; Garg, R.; Chakrabarti, N.B.. Design of power amplifiers at 2.4 GHz/900 MHz
and implementation of on-chip linearization technique in 0.18 /0.25um CMOS [C]. International
Conference on VLSI Design, 2004. Proceedings. 17th, 2004, 410 415.

CMOS
CMOS
10 CMOS

1GHz
10GHz

2.1

2.1.1

E
B = J +
t

2.1

B dl = J +

10

E
ds
t

2.2

B
E =
t

2.3

E dl =

B ds
S

2.4

I
I

L=
(2.5)
I
L

2.1.2

1 I1 2 2
2 I2 l
1

I1 2 21
I1

M 21 =

21
I1

M 12 =

12
I2

11

M21 M12
M21M12M

M=

12 21
=
I2
I1

2.6

k
:

k=

M
L1 L2

(2.7)

k 1

L1 L2

L = L1 + L2 + 2M

(2.8)

L1 L2

L = L1 + L2 2M

(2.9)

2.1.3

Grover [2.1] Greenhouse[2.2]

[2.32.4]

[2.5 2.6]
Ltran
2.5 55125
[2.7]

12

2.1.4

2
LCCMOS

2.2

[2.8-2.10]

2.2.1
2.1

2.1 ab

2.2

13

1
2

3
4

2.3CMOS

a
b
2.2 ab

2.4

2.3 CMOS

2.4

2.5

14

2.5(a-d).

(a)

(b)

(d)

(e)

(c)

(f)

2.5

2.5(e)

2.5(f)

w s
n din dout
2.2.2
2.6

0.4m4m

15

Cm_s

2.6i1i2i3

Cm_mCm_m

2.6

2.2.3
Q
fSR

Energy stored
Energy lost in one cycle

2.1

Emav Eeav )
(
Im( y11 )
QL ( ) =
= 2
Re( y11 )
Pl av

2.2

Q L ( ) = 2

16

Emav Eeav Pl av
y111Y
[2.11]
QL ( ) =

Im( y12 )
Re( y12 )

2.3

y1212Y

ZinZin

[2.12]

QL ( ) =

Im( Z in )
Re( Z in )

2.4

2.4

[2.13]LC

VCO

fSR
fSR

2.3

2
3

2.3.1
Cm_s
Cm_s
Cm_s
17

2.7Cm_m

Cm_m
Cm_m
Cm_m Cm_s

2.7

2.3.1.1
DCM Cm_m Cm_s
[2.14]
[2.15-2.16]

[2.17-2.19]:

1) m wm
tm

2)
3)

[2.14]

[2.16]

l (1), l (2),...l (m), l (2n) n

m ltot (= l (1) + l (2),... + l (2n))
Vbeg Vend
VSVbegVend
18

m [Vend(m)]
m

Vend (m) =Vbeg

l
j =1

ltot

(V

beg

Vend

(2.5)

m Vend(m)
m1 Vbeg(m)
Vbeg (m)Vend(m-1) Vbeg(0)= Vbeg

(2.6)

2.8

2.8 m k 2
i Vi

i
Vi (m) = Vbeg (m) ( V (m) )
k

(2.7)

V (m) = Vbeg (m) Vend (m) = Vend (m 1) Vend (m) =

l ( m)
(Vbeg Vend ) (2.8)
ltot

2.52.8
k 2.52.8 x y
i Vi(x,y)

Vi ( x, y) = Vi ( x) Vi ( y)
i
i

= Vbeg ( x) ( V ( x) ) Vbeg ( y) ( V ( y) )
k
k

i l
i l
= Vend ( x 1) x (Vbeg Vend ) Vend ( y 1) y (Vbeg Vend )
k ltot
k ltot

(2.9)

y 1

l j

i l y lx
j=x

=
+
(Vbeg Vend )
ltot
k ltot

19

x
i Vi(x,xsubstrate) ,
Vi(x,0) 2.7
i
Zsub,jVsub,j
(2.5-2.9)
2.3.1.2

[1.10] m m k
i Vi(m) i

wl
1
1
2
2
Ec,ms (i) = Ci (m) (Vi (m) 0) = Cms (m) m m (Vi (m))
k
2
2

,Cms(m) m
m m

k
k
1
2
Ec,m _ s,m = Ec,m _ s,i = Cms (m) (Vi 0)
i =1
i =1 2
k
1
=

i =1 2

wmlm
i

Cms (m)
Vbeg (m) V (m)
k
k

2
2
1 1

(
)
2
(
)
(
)
(
)
V
m
V
m
V
m
i
V
m

beg

i
beg
k k

i =1
1
2
k + 1 (k + 1)(2k + 1)
2

= Cmplate
( V (m) )
_ s (m) Vbeg (m) Vbeg (m)V (m)
+
2
2
k
6k

1
1
= Cmplate
_ s (m)
2
k

1 plate
1
2
2
Cm _ s (m) Vbeg
(m) Vbeg (m)V (m) + ( V (m) )
2
3

lm
1 plate
1 lm
2
= Cm _ s (m) Vend (m 1) Vend (m 1) (Vbeg Vend ) + (Vbeg Vend )

2
ltot
3 ltot

1
= B(m) Cmplate
_ s (m)
2
(2.10)

20

Cmplate
_ s ( m) ( = Cms ( m) wm lm ) m
m1

lj

j =1
B(m) = Vbeg
(Vbeg Vend

ltot

m

lj

j =1
) Vbeg l (Vbeg Vend
tot

1 lm

) + 3 l (Vbeg Vend )
tot

m
Ec ,m _ s (m)
Ec ,m _ s
M

Ec,m_ s = Ec,m_ s (m)

(2.11)

m=1

M
k x y

i Vi(x,y)2.9 i

1
2
Ec , mm _ i ( x, y ) = Cmm ( x, y ) ( Vi ( x, y ) )
2

y 1

l j

i l ( y ) l ( x)
1 plate
1 j=x
= Cmm ( x, y )
+
(Vbeg Vend
k ltot
k
ltot
2

lx + l y
plate
( x, y ) = Cmm ( x, y ) d m
Cmm

x y dm tm
x y
dm x y
wx =

wy Cmm(x,y) x y
x y
k

Ec , m _ m ( x, y ) = Ec ,mm _ i
i =1

y 1

l
j

k
2
1 j=x
i l y lx
1 plate
= Cmm ( x, y )
+
(Vbeg Vend )
k ltot
k ltot
i =1 2

y 1
y 1 2

l j ( l y lx ) l j
2
k 1
1 l y lx

j=x
plate
+

( x, y ) j = x +
Cmm

(Vbeg Vend
2
ltot
ltot
2
3 ltot

21

Ec,m_m
2n
2
1
Ec,m _ m = Cm _ m (Vbeg Vend ) = Ec,mm ( x, y)
2
x=1, y =1

y1

l j
2n
1 plate
j =x
= Cmm ( x, y)
l
x=1, y =1 2

tot

y1

l j
1 2n plate
j =x
= Cmm ( x, y)
l
2 x=1, y=1

tot

2
y 1

2
( ly lx ) l j
1 ly lx
j =x
+
+
(Vbeg Vend
2

ltot
3 ltot

2
) 2.12

2
y 1

l
l
l

2
( y x) j
l y lx

1
j
=
x
+
+
(Vbeg Vend

ltot2
3 ltot

Cmplate
_ s ( m) ( = Cms ( m) wm lm ) m

y1

l j
2n
plate
j =x
Cm_ m = Cmm (x, y)
l
x=1, y=1

tot

2
y1

l
l
l
2
( y x) j

l
l

j =x
y
x
+
+

2

3 ltot
ltot

(2.13)

2n

x =1, y =1

kc ksp
kv

2.3.2
Cm_s
spiral
( ECspiral
Vs
, m _ s ); Cm_m EC , m _ m

22

1
C eqVs2
2
spiral
= ECspiral
, m _ s + EC , m _ m

EC ,total =

1 spiral 2 1 spiral 2
C m _ m Vs + C m _ s Vs
2
2
1
2
spiral
= ( C mspiral
_ m + C m _ s ) Vs
2

(2.14)

( Ceqspiral )
spiral
Ceqspiral = Cmspiral
_ m + Cm _ s

(2.15)

2.9
2.9(a)

Cm_m_symmetric

Cm_m_symmetric

4 2 6

1 5 3 Signal Ground 4 2 6 1 5 3
Signal Ground

1
+ Vs
2

1
Vs
2

1
1
C
C
2 m_s 2 m_s

Cm_m_se_spiral

1 3 5

6 4 2

Vs

Vs

Cm_s

Cm_s

(a)
(b)
(c)
2.9 (a)(DSPI); (b)
(SSPI); (c) (SEPI). (123456

2.9 (a)

2.10 n

23

(a)

(b)

(c)
2.10 n

Vend0VSVbeg3.63.7
2n
2
1
Ecspiral
=
C
V

V
=
Ecspiral

,m_ s,se
m_ s ( beg
end )
,m_ s,se (m)
2
m=1
m
m1
2n l j l j
1
= 1 j=1 1 j=1
ltot
ltot
2 m=1

1 1 2n
2
= Cmplate
_ s (m) V S
2 3 m=1

24

2
+ 1 lm Cmplate
_ s (m) V S

3 ltot

1 2n plate
plate
Cmspiral
=
Cm_ s (m) = kcspiral
_ s,se
,se Cm_ s
3 m=1

(2.16)

2n

1
plate
plate
kcspiral
,se = Cm _ s = Cm _ s ( m)
3
m =1

Cmspiral
_ s , se
VbegVS/2VendVS/22.10-2.11
spiral
c,m _ s ,diff

2n
2
1
= Cm _ s (Vbeg Vend ) = Ecspiral
,m _ s ,diff (m)
2
m=1
2
m1
m1

l j l j
1 1 j =1 1 j =1
=

ltot 2
ltot
2 2

1 1 2n
2
= Cmplate
_ s (m) V S
2 12 m=1

2n

l
l
1
2
m + m Cmplate
_ s (m) VS

ltot 3 ltot m=1

Cmspiral
_ s,diff =

kcspiral
,diff =

1 2n plate
plate
Cm_ s (m) = kcspiral
,diff Cm_ s
12 m=1

(2.17)

2n
1
Cmplate
=
Cmplate

_s
_ s ( m)
12
m =1

Cmspiral
_ s , diff
2.162.17 2.9

1 spiral
Cmspiral
Cm _ s , se
_ s , diff =
4

(2.18)

2.11
2.18[2.10]
25

2.11 Cm_s

2.9 x,y y=x+2

(2.13)
( l ( x + 2) l ( x ) )

spiral
m _ m , se

ltot

lx + lx +1
plate
Cmm ( x, x + 2)

l
x =1
tot

2n2

(2.19)

y=2n-xx y=2n-x+2x
(2.15)
2
2

2nx1
2nx+1

lj n
lj
n1
ltot
j =x

spiral
plate
plate
+ Cmm (x,2n x + 2) j =x (2.20)

Cm_ m_ diff
Cmm (x,2n x)

ltot x=2
ltot
x=1

2.15-2.17,2.192.20:

( l ( y )l ( x)) 0

spiral
eq , se

=C

spiral
m _ m , se

+C

spiral
m _ s , se

2
2n2
lx + lx +1
1 2 n plate
plate
= Cm _ s (m) + Cmm ( x, x + 2)
(2.21)
ltot
3 m=1
x =1

spiral
spiral
Ceqspiral
,diff = Cm _ m,diff + Cm _ s,diff

2nx1

lj
n1
1 2n plate
j =x

plate
= Cm_ s (m) + Cmm (x,2n x)
ltot
12 m=1
x=1

2nx+1
n
lj
+ C plate (x,2n x + 2) j=x

mm
ltot
x=2

(2.22)

2.3.3
90 Lstacked n 2 Lsin gle layer
n 2.12 4
2.13 2.14 n

26

a
b
2.12 a(b)

(a)
b
2.13 n ab

(a)
b
2.14 n ab

x y y=x+22.13
solenoid
m _ m , se

lx + lx+1 1
= Amm ( x, x + 2)
=
ltot n2
x =1

2 n 2

27

2 n2

C
x =1

plate
mm

plate
( x, x + 2) = kcsolenoid
, m _ m , seCm _ m , se 2.23

2 n 2 plate

Cmplate
_ m , se = Cmm ( x, x + 2)
x =1

1
kcsolenoid
, m _ m , se = 2 n
n

2n2

Amm ( x, x + 2)

( n 1)

x =1

2.14(a)
n-1,

kspsolenoid
=
, se

1
(n 1) 2

solenoid
v , se

1
= 2
n

1
1
= 1
2
(n 1) n

2.15

2.15 Cmsolenoid

_ m _ se

28

2.13 y=2n-xx y=2n-x+2

x

Cmsolenoid
_ m _ diff

2 n x 1
2 n x +1
l

j
lj
n 1
n
j=x

+ Amm ( x, 2n x + 2) j = x
= Amm ( x, 2n x)
ltot x = 2
ltot
x =1

2
1 n 1 2 n x 1 n 1

= 2 1 2 Amm ( x, 2n x)
4n x =1 j = x x =1

1 n 1
n 1

= 2 ( n 2 2nx + x 2 ) 2 Amm ( x, 2n x)
n x =1
x =1

3.24

2n 2 3n + 1 n 1

=
2 Amm ( x, 2n x)
6n

x =1
solenoid
plate
= kc ,m _ m,diff Cm _ m ,diff
n 1

x =1

x=2

Amm ( x, 2n x) = Amm ( x, 2n x + 2)

n 1

solenoid
2
Cmsolenoid
_ m _ diff = 2 ( Amm ( x, 2n x ) ) k m _ m _ diff = ( 2n 3n + 1) 6n
x =1

2n2

Amm ( x, x + 2)

( 2n 2 )

x =1

2.13(b)
2n-2

k spsolenoid
=
, diff

1
4(n 1) 2

kvsolenoid
= kcsolenoid
k spsolenoid
=
, diff
, diff
, diff

29

2(2n 4 7n3 + 9n 2 5n + 1)
3n

2.16

2.16

2.17

2.17

2.52.10 2.11

30

2n
2n
2
1 solenoid
Ecsolenoid
Cm _ s _ se (Vbeg (2n 2) Vend (2n) ) = Ec,mm (m, sub) + Ec,ms (m, sub)
,m _ s , se =
2
m=2n2
m=2n1

1 1 2 2
1 1 1 1 2 2 plate
1 plate

= Cms (2n 1, sub) + V S + Cms (2n, sub) V S

3 2n
n 2n 3 2n

1 7
1

= 2 Cmsplate (2n 1, sub) + 2 Cmsplate (2n, sub) V S2

2 12n
12n

1 1 2n
1
= Cmsplate ( x, sub) VS
2 3 x=2n2
n

1
Cmsolenoid
Cms wlsingle-turn
_ s _ se =
3

2.25

n+1
2
1 solenoid
solenoid
Ecsolenoid
,m_ s,diff = Cc,m_ s,diff (Vbeg (n) Vend (n +1)) = Ec,m_ s,diff (m)
2
m=n
n1

lj
1 1 j=1
=

2 2 ltot

lj

1
j=1

2 ltot

lj
1 1 j=1
+

2 2 ltot

l 2
V 2
+ 1 n Cmplate
(
n
)
_s
S

3 ltot

n+1

lj

1
j=1

2 ltot

2
2
+ 1 ln+1 Cmplate
_ s (n +1) VS

3 ltot

1 1 n+1
1
= Cmplate
VS
_ s (m)
2 3 m=n
2n

1 1 n+1
1VS 1 VS
= Cmplate

_ s (m)

2 12 m=n
n 2 n 2

Cmsolenoid
_ s _ diff =

1
Cms wlsingle-turn
12

2.26

n
2.252.26
solenoid
Cmsolenoid
_ s _ se = 4Cm _ s _ diff

31

2.27

2
1
solenoid
Ecsolenoid
= Ceqsolenoid (Vbeg Vend ) = Ecsolenoid
, se
, m _ s , se + Ec , m _ s , diff
2

2n2

Ec,mm ( x, x + 2) +
x =1

2n

x = 2 n 1

Ec , ms ( x, sub)

2n
1 1 2 n2
1

2 ( Cmm ( x, x + 2) ) + 2 ( Cms ( x, sub) ) V S2

2 n x =1
3n x = 2 n 1

Ceqsolenoid
=
, se

2n
1 2n2
1
(
,
)

C
x
y
+

)
( mm
( Cms ( x, y) )
3n 2 x = 2 n 1
n 2 x =1

2.28

2
1
solenoid
solenoid
Ecsolenoid
= Ceqsolenoid
, diff
, diff (Vbeg Vend ) = Ec , m _ s , diff + Ec , m _ s , diff
2
n 1

x =1

x =2

= Ec,mm ( x, 2n x) + Ec,mm ( x, 2n x + 2) +

2n

x = 2 n 1

Ec,ms ( x, sub)

2n

1
1
n1

= ( 2n2 3n + 1) 6n 2 ( Cmm ( x, 2n x) ) +
( Cms ( x, sub) ) V S2

2
2
x=1
12n x=2 n1

2n
1
n1

2
=

Ceqsolenoid
n
n
n
C
x
n
x
2
3
1
6
2
(
,
2
)
(
)
(
) mm
, diff
12n2 ( Cms ( x, sub) ) 2.29
x = 2 n 1
x=1

2.18

2.18
2.18 2.282.29

32

Cm_m
.

2.3.4

[2.20]

Cmplate
_s =

w l 0 eff

2.30

Teff

w l Teff
T w Teff
6
w
T T
Teff = w + 2.42 0.44 + 1
w w
T

2.31

eff
eff =

1 + 1 10T
+
1 +

2
2
w

1 2

2.32

2.4
RdcRskin
Rprox Rr
RskinRprox
RindRr
Rr
33

2.4.1
Rdc
Rdc
Rdc

Rdc =

20 (1 + (T 20C) ) l
tw

=R

l
w

2.33

20 , ,T,l ,t,w 20C

R

( = (1 + (T 20C) ) t )
20

IC

2.19

CuAl
Cu,201.78cmAl,202.86cm
Cu = 0.00393 Al = 0.00429
2.332.19

2.4.2

34

Rskin Rskin Rdc Rskin

2.4.2.1

[2.21]
I0 2.20I0
B
I1
2.20
1 -B I0
dB

= jB U B U
2
2
dt

I0

2
3
I1 U

4 I1 I0

2
I1 I0

5 I1 I0 2.20
2.20 I1 I0
I1 I0 I1 I0
I1 I0

2.20
35

d
j

j = j0 e d /
j0
j j0 1/e

2.34

2.21

2.21

2.22

2. 22[2.22]
36

2.4.2.2
1916[2.23]
[2.242.33]
[2.31]R. Faraji-Dana Y. Chow
[2.33][2.29, 2.32]

Z skin ( ) =

(1 wt ) + ( k Z hf ( )
2

(w + t ) )

2.35

wtk1.2

Zhf

Z hf ( ) =

j / 4

2.36

2.35

Z
t
[2.32]

Z t ( ) =

coth( t / 2)
2

2.37

2 = j

Rdc t =

1
t

2.38

2.37teff

sheet
Rskin
_ v = real ( Z t ( ) ) =

t
teff

Rdc t

teff =

Rdc t
=
real ( Z t ( ) )

37

real 2 coth( t / 2)
2

2.39

sheet
Rskin _ v = w Rskin
_v =

[2.31]

tw
Rdc t
teff

2.40

t
t
Rskin _ v = real Rdc coth
2
2

1+ i

2.41

2.402.41

2.23

2.24
m-2

2.23

2.24
/m2
Rhf

ttotal

ttotal ( ) 2 ( )

2.42

weffteff
Rskin =

tw
Rdc
teff weff

weff =

38

tw
Rdc
teff Rskin

2.43

2.25

2.25
w/tweffw/t1weff

B)

kskin =

real ( Zskin () )
Rdc

= real 1 + j ( k wt ( 2(w + t ) ) )

2
2

= 1 + ( k wt ( 2(w + t ) ) )

0.25

2.44

2
1

cos atan ( k wt ( 2(w + t ) ) )

2

39

2.26

2.44wt2.26
2.442.26

1tkskinw
2wkskint
kskinwt
2.4.3

Rprox

40

2.27

A)
2.27

B)

2.28

n N nb N nb
N1 N2 N3 N4Nkk1234
4.20 n [2.27]
Racn =

nth strip

Eni ( x, y ) dxdy

nth strip

i
n

E ( x, y )dxdy

2.45

Racn 2.45

41

a
b
2.29 Pw/s(a)(b)
w/t=5 P =

w/t
/t

2.29w/t=5Pw/s(a)(b)

1
2w/s
3
;

4
C)

2.5
CMOS
[2.35-2.37]
[2.38-2.40]

42

2.5.1

2.5.1.1

()

2.30 k
Lind Rind Lsub Rsub
iind ieddy

Lind

AC

iind
Rind

k
Rsub
ieddy

Lsub

2.30

()

2.5.1.2

43

2.30
:
.

(2.46)

0 = ( Rsub + j Lsub ) I eddy + j M I ind

(2.47)

U ind = ( Rind0 + j Lind0 ) I ind + j M I eddy

.

j M I eddy , j M I ind

2.47
.

I eddy =

.
j M
I ind
Rsub + j Lsub

(2.48)

I eddy ,nor =

I eddy
.

j k Lind Lsub
jk Lind Lsub
j M
=
=
Rsub + j Lsub
Rsub + j Lsub
Rsub + jLsub

(2.49)

I ind
M

M = k Lind Lsub

(2.50)

PAI sub ,eddy = tan real I eddy ,nor image I eddy ,nor

(2.51)

2.31

2.31 210nH

0.01nH
2.48-2.51 2.31

44

1
0 90
2
90 0
3
4
5
6
7 Rsub

Lsub I eddy ,nor K Lind Lsub

Rsub Lsub
Rsub > Lsub

I ind _ eddy

.
.
( j M )
j M
=
I eddy =
I ind
Rind + j Lind
( Rind + j Lind ) ( Rsub + j Lsub )
2

(2.52)

( j M )
I ind _ eddy =
( Rind + j Lind ) ( Rsub + j Lsub )
2

(2.53)

( L R + Lind Rsub )
PAI sub ,eddy = tg 2 sub ind

Lind Lsub Rsub Rind

( Lsub Rsub + Lind Rind )
= tg

( Lsub Rsub ) ( Lind Rind ) 1

Q + Qind
= tg sub

Qsub Qind 1
Qind

Qsub

tg ( Qind )

45

(2.54)

2.32

2.32 210nH
0.01nH
2.52-2.54 2.32
1

2.482.46
.

U ind = ( Rind 0 + j Lind 0 ) I ind + j M I eddy

.

= ( Rind 0 + j Lind 0 ) I ind +

( M )

Rsub + j Lsub

I ind

2
Rsub ( M )2
Lsub ) ( M ) .
(
= ( Rind 0 + j Lind 0 ) I ind + 2
j 2
I ind
2
R + ( L )2

R
L
+

(
)
sub
sub
sub
sub

2
2

Lsub ( M ) .
R ( M )
j

L
= Rind 0 + 2 sub
+
+

I ind
2
ind 0 R 2 + ( L )2
Rsub + ( Lsub )

sub
sub

= ( Rind 0 + Rr ) + j ( Lind 0 + Lr ) I&ind

.

= Z ind ,eff I&ind

Z ind ,eff = ( Rind 0 + Rr ) + j ( Lind 0 + Lr )

M )
k 2 ( Lind ) Q 1 k 2 2 Lind Lsub
(

Rr = 2
Rsub =
2
1 Qsub + Qsub
Rsub
Rsub + ( Lsub )
2

sub

46

2.55
2.56

Lr =

( M )

2
Rsub
+ ( Lsub )

Lsub =

k 2

( R ( L ) )
sub

sub

+1

Lind =

k 2

(1 Qsub )

+1

Lind 2.57

Rr Lr
Z rRr + j Lr

2.58

Zr

2.56-2.57
1
2
3

m
e
Esub
, eddy Esub , eddy

k 2 2 Lind Lsub 2
I ind
Rsub

e
2
Esub
, eddy = I ind Rr =

m
sub , eddy

k 2 Lind
1
1
2
2
I ind
= Lr I ind =
2
2
2 ( Rsub ( Lsub ) ) + 1

2.59

2.60

2.592.60
1)

2)
3)
4)

47

sub =

sub0

Rsub =

2 sub sub

Rsub =

sub sub

(2.61)

= Lind I ind = kLsub I eddy

2.48
2 2
Lind k Lsub Lind Lsub
=
2
2
Lsub
+ ( Lsub )
Rsub

(2.62)

k = 2
2
rh + d
2
h

3
2

(2.63)

rh d

2.612.632.562.572.592.60

2.5.2

2.5.2.1

2.6 i1

2.6 i2

48


2.6 i3capacitive coupling substrate
CCSC
currentsCCSC
2.5.2.2

2.33

2.33
k j vind,jCms,j
vsub,j 2.33 Rsub,c,j Csub,c,j

2.33

Rsub ,c , j (1 + j Rsub ,c , j Csub ,c , j )

vsub , j = real
vj
Rsub ,c , j (1 + j Rsub ,c , j Csub ,c , j ) + 1 jCms , j

( R
=

sub ,c , j

Cms , j ( Cms , j + Csub ,c , j )

1 + Rsub ,c , j ( Cms , j + Csub ,c , j )

Cms , j
or

Csub ,c , j
1
R sub Csub

( R

1 + (C

sub , c , j

Cms , j )

vind , j

2.64

ms , j Rsub , c , j )

vind , j

2
1
Ec , sub , j = Cm _ s , j ( vind , j vsub , j )
2

2
1
Ec , sub , j = Cm _ s ( vind , j vsub , j )
2.65
4

Ec , sub , j =

vsub , j 2
Rsub ,c , j

49

2.66


vsub , j 2
Rsub ,c , j

2
1
= Cm _ s ( vind , j vsub , j )
4

2.67

2.642.67

2.642.65

1 (Cms , j Rsub ,c , j ) 1
2

2.5.3

[2.42][2.41]
[2.43]

2.5.4
Groves, R[2.44]/BiCMOS
50

2.6

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Inductors [D]. A DISSERTATION FOR THE DEGREE OF DOCTOR OF PHILOSOPHY
OF THE DEPARTMENT OF ELECTRICAL ENGINEERING OF STANFORD
UNIVERSITY, 2004.
[2.32] L. F. Tiemeijer, R. J. Havens, Y. Bouttement, and H. J. Pranger. The Impact of an Aluminum
Top Layer on Inductors Integrated in an Advanced CMOS Copper Backend [J]. IEEE
ELECTRON DEVICE LETTERS, 2004, 25(11):722-724.
[2.33] R. Faraji-Dana and Y. Chow. Edge condition of the field and ac resistance of a rectangular
strip conductor [C]. Proc. Inst. Elect. Eng., 1990, 137:133140.
[2.34] Faraji-Dana, R.; Chow, Y.L.. AC resistance of two coupled strip conductors [C]. IEE

53


Proceedings

Microwaves,

Antennas

and

Propagation

[see

also

IEE

Proceedings-Microwaves, Antennas and Propagation], 1991, 138(1):37 45.

[2.35] Niknejad, A.M.; Meyer, R.G.. Analysis, design, and optimization of spiral inductors and
transformers for Si RF IcsJ.

IEEE Journal of Solid-State Circuits, 1998, 33(10):1470

1481.
[2.36] Burghartz, J.N.. Progress in RF inductors on silicon-understanding substrate lossesC.
International Electron Devices Meeting, 1998, 6-9.
[2.37] Yue, C.P.; Wong, S.S. Physical modeling of spiral inductors on siliconJ. IEEE
Transactions on Electron Devices, 2000, 47(3):560 568.
[2.38] Pin-Quan Chen; Yi-Jen Chan. Improved microwave performance on low-resistivity Si
substrates by Si+ ion implantationJ.

IEEE Transactions on Microwave Theory and

Techniques, 2000, 48(9):1582 1585.

[2.39] Lakdawala, H.; Zhu, X.; Luo, H.; Santhanam, S.; Carley, L.R.; Fedder, G.K. Micromachined
high-Q inductors in a 0.18-m copper interconnect low-k dielectric CMOS processJ.
IEEE Journal of Solid-State Circuits, 2002, 37(3):394 403.
[2.40] Royet, A.S.; Cuchet, R.; Pellissier, D.; Ancey, P. On the investigation of spiral inductors
processed on Si substrates with thick porous Si layersC. 33rd Conference on European
Solid-State Device Research, 2003. ESSDERC '03. 16-18:111 114.
[2.41] Yue, C.P.; Wong, S.S.. On-chip spiral inductors with patterned ground shields for Si-based
RF IcsC.

IEEE Journal of Solid-State Circuits, 1998, 33(5):743 752.

[2.42] Pun, A.L.L.; Yeung, T.; Lau, J.; Clement, J.R.; Su, D.K.. Substrate noise coupling through
planar spiral inductorJ. IEEE Journal of Solid-State Circuits, 1998, 33(6):877 884.
[2.43] Murata, K.; Hosaka, T.; Sugimoto, Y.. Effect of a ground shield of a silicon on-chip spiral
inductorC. Asia-Pacific Microwave Conference, 2000, 3-6:177 180.
[2.44] Groves, R.; Harame, D.L.; Jadus, D.. Temperature dependence of Q and inductance in spiral
inductors fabricated in a silicon-germanium/BiCMOS technologyJ. IEEE Journal of
Solid-State Circuits, 1997, 32(9).

54

LCR

3.1

3.1

3.1r1r2
d

k
3

k1,2

r r 2
= 21 2 2
r1 + d

(3.1)

3.1.1

d=0
3

k1,2

r 2
= 2
r1

(3.2)

55


N 1 2 N i
wi i i1 si pi
wi+si r i

i 1

ri = r ( w j + s j ) (
j =1

wi + si
)
2

(3.3)

3.33.2
m n
3

km ,n

3.2

m 1
wm + sm 2

3
(
)
r

w
+
s

(
)

j
j
rm 2
2
j =1

= =
n 1
rn r ( w + s ) ( wn + sn )

j
j

2
j =1

3.3

(3.4)

200m 16m

1m 11

3.1 200m 16m 1m 11

turn

10

11

0.8698

0.7459

0.6284

0.5179

0.4147

0.3195

0.2329

0.1560

0.0901

0.0376

0.8698

0.8575

0.7225

0.5954

0.4768

0.3673

0.2678

0.1794

0.1036

0.0432

0.7459

0.8575

0.8425

0.6944

0.5560

0.4284

0.3123

0.2092

0.1209

0.0504

0.6284

0.7225

0.8425

0.8241

0.6599

0.5084

0.3707

0.2483

0.1434

0.0599

0.5179

0.5954

0.6944

0.8241

0.8008

0.6169

0.4498

0.3013

0.1741

0.0726

0.4147

0.4768

0.5560

0.6599

0.8008

0.7704

0.5617

0.3762

0.2174

0.0907

0.3195

0.3673

0.4284

0.5084

0.6169

0.7704

0.7291

0.4883

0.2821

0.1177

0.2329

0.2678

0.3123

0.3707

0.4498

0.5617

0.7291

0.6698

0.3870

0.1615

0.1560

0.1794

0.2092

0.2483

0.3013

0.3762

0.4883

0.6698

0.5778

0.2411

10

0.0901

0.1036

0.1209

0.1434

0.1741

0.2174

0.2821

0.3870

0.5778

0.4173

r(i)

200

191.5

174.5

157.5

140.5

123.5

106.5

89.5

73.5

55.5

38.5

56


3.4
3.2 3.3 200m
16m 1m 11 3.1
3.3

3.1-3.4 3.1 3.3

1
2
3

kmin

ki>kmin i

b
3.4

3.1.2

3.4
57


3.4
3.1
11

;
3

3.1.3

0.9
n
n
n2 n

m4

m4

m3

m3

m2

m2

m1

m1

whole

whole

3.5

3.5 3.5

58


3.5

Z 3.6

3.6
a(b)

3.7 4 [3.1]

Z Z
Z
Z
Z 3.7 4
Z Z
Z Z
Z Z

59

4th

3th

3.8

2th

1th

whole

4 3

3.8 4 3

3.5

m1m2m3m4

3.2

3.2.1

Cm_s

1)

2.182.27 Cm_s

60

Cm_s

3pn Cm_s

pn

[3.2-3.4]

pn Cm_s [3.5-3.6]

3.9 pn

CMOS p n+ n p
pn n+-p nw-p 3.9 (a), (b)
n p+ pn (p+-nw-p) 3.9 (c)
pn n-
p-(pw-nw) 3.9 (d)d p n 3 pn
(n+-pw-dnw) 3.9 (e)
pn

pn
Cm_s pn Cm_s

61

Cm_s

Cm_s
Cm_s Cm_s
C

m_s
m_s
m_s
_s
m_s
Qmetal
> Qn mwell
> Qdeep
1 > Q poly > Qn +
n well

(3.5)

Cm_s
Cm_s Cm_s

1
poly
n
n well
n well
Cmmetal
> Cmdeep
_ s > Cm _ s > Cm _ s > C m _ s
_s

(3.6)

1
LC VCO Cm_s
2

pn
A pn pn 3.9(d) (e)
n-
B pn 3.9(c) n-
pn Cm_s

3.2.2 [3.7]

S
S

(1)

62

3.10 (a)

(2)

3.10 (b)

1 3 5

m1
4

2 4 6

m3//4

m2

1 3 2

2 1 3

(a)
(b)
3.10 (:123456
; mi, m i )

li i (ltot)

Cm_m[3.8-3.10]
[3.10]Cm_m

3.2.3

1)

63


2)

[3.11];
3) pn

3.3

3.3.1

3.3.1.1

2.33Rdc t
w l
Rdc
1

t
Rdc.
2

2.33
Rdc

l
Rdc
Rdc
4

L = I = BS I

3.7

BSI
l
Rdc
64

3.11 n

3.12

3.11 n
a P A R r

Ap
Pp

1

R cos
2
n

3.8

Ac R
=
Pc 2

3.9

3.83.9

RAPpc = cos( / n)

3.10

3.103.12
12

3.3.1.2
2.33Rdc
Rdc

1
IC

65


Rdc

0.13m
Rdc

3
2.33Rdc
3.3.2

3.3.2.1

AwtA
Rdc
3.13

(a)

(b)

(c)

3.13
abc

32m (Rdc) 32m

(Rskin) 3.14 32m
(Rskin-v) 32m
3.15

66

3.14 32m 1m 32
1m 32m2m 16 2m 32m

3.15 32m 3.14

67

3.16 4m

3.17 4m

4m

4m

3.16

0.5m 8
0.5 4m

3.184m16m
w/t=1m/0.5m161m16m80.5m
4

3.16RHF

68

3.17

3.16
3.17

3.18 4m 16m

3.3.2.2

A)

Zr1
P3.19
r
i rp d sin( )
dH =
cos( )
r2
4

3.11

3.11

I
3.12
H c = rp2 3
2

3.19

3.20

69


3.20
Z

[3.12]

3.21[3.13]

3.21[3.13]

3.22

3.22
4
C

3.23

3.232.45
70


3.243.25

ext

3.24 Ez EZ
w/t=5, P =

w/t
/t

[3.14]

= 9 ,a)w/s=0.1,b)w/s=1.0,c)w/s=10

ext

3.25 Ez EZ
w/t=5, w/s=4a)P=1,b)P=3,c)P=9 P =

w/t
/t

P [3.14]

3.243.25
1w/s
2

ww/s

[3.153.16]
D
90
3.26a
71

3.26b
/

3.26 ab

3.3.2.3

LITZ
3.27LITZ

LITZ

3.27LITZ

3.28[3.16]
440.18m6CMOS

[3.16]3.28
LITZ
72


40
LITZ

3.29LITZ

[3.17]

LITZ

3.30Z2

wl

Top-layer

Bottom-layer
wt/2

l0
via
One-turn
3.29 LITZ

lt(i)

ws

Z
wt
wt/2

3.30 LITZ

3.308LITZLITZ
73

m
N
n
tlll1

ws
ls
s
wl
wt
l0
lt(i)ii
3.30

w l = m(w s + s ) s

3.13a

w t =l0 tan( )

3.13b

lt (i)=nw l

3.13c

ls (i)=2n ( l0 + tl )

3.13d

3.30 2

3.31 LITZ[3.17]

3.3120PCBLITZ1MHz
[3.17]

74


3.32
4
( 2 ) / N d Nd

3.33
WIW0RI
s
WO + s RI + Wt
=
WI + s
RI

3.14

n
n=
1th

2 RI
WI + s

3.15

Wo

2th
Center Line

Wt

via

WI

RI

RO

O
3.32

3.33

3.4
CMOS GHZ

3.4.1
2.592.60

1
2
3
:

75

5
6

[3.18]
PCB

pn
[3.19-5.22]
pn p+ n+
pn
pn
pn
3.34

3.34 pn
3.34pnpn
pnpn
pn
pn

3.4.2

pn

76


pn

(a)

slot
connected partly

(b)
3.35

n+n
[3.23-3.25]

3.35
77


3.35b

3.35a
3

5 1 Cm_s Q
LC VCO C

1 [5.15-5.16]

2
3 p n pn

4
5

3.4.3

[3.26][3.23]
[3.25]

78

3.36

1)

2)

3.36

3.5

3.37

3.5.1

3.37

79

3.5.2 [3.6]
LC VCO
LC
pn pn
Cm_s Cm_s
pn pn

Apn

pn

1
Cms = Cox1 + ( C eff
j ) + Csub
1

(3.16)

1
1
C eff
j = ( C j (1) + ... + C j (i ) )

(3.17)

Cj(i)Cox C eff
j Csub
ipn

(C )(W

Cj =

q si N A N D
1

2bi ( N A + N D ) bi + VR

(3.18)

Wdi =

2 si ( N A + N D )
VR + bi
qN A N D

(3.19)

NA, ND (atoms/cm3) p- n-si

bi pn VR pn
80

CjNwell-psub
CjPdiff-Nwell
Cjdual pn
CjNdiff-psub

316

109
10 109.7

142

81

47
45.6
34.5

100

Cox (aF)

pn Junction Capacitance (aF/um 2)

10

10

2 3 4
6
pn Junction ReverseBias Voltage(V)

(0.3,115)

(1.2,29)
(2.7,13)
10

0
0

eff

3.38 C j VR

6
8 10
Tox (um)

12

14

3.39 Cox Tox

CMOS p-n- p-NAsub

=1015 cm-3, NDn-well =1016 cm-3 NA_d-diff =1017 cm-3 3.38 (3.18)
Cj pn
C eff
j Cm_s
(Cox)
Cox =

0 ox
Tox

(3.20)

0 , ox (8.8541810-14F/cm)
(3.9)Tox 3.39
Cox ToxToxCoxTox
Cox C eff
j
C a b b aC a

b C C
Tox Cm-s Cox C eff
j
pn Cm-s C eff
j Cox Csub

pn
pn

1 pn pn

81

3 pn pn
4
Cox

5 pn pn
6
B

Qtank = 2

(3.21)

2.2

Qtank > QL

(3.22)

fSR

fSR

QL,VCISO > QL, normal

(3.23)

LC VCO [3.27-3.29] LC
VCOQtankQLQC

Qtank =

QC QL
QC + QL

(3.24)

Qtank < QL

(3.25)

3.233.25LC

LC
82


3.5.3 pn

LCLC
pn
LCLC

3.5.4

Cm_s
3.40 LC

3.40

LC

LC LC LC
Q Cm_s LC VCO
(3.22) LC
Cm_m Cm_s
1

2
3
4
LC VCO

3.6

83

pn
12

LITZ3DLITZ

pn

LC CVO
pn
LC VCO
LCR

[3.1] . [P].
200510023534.7,:2005 1 25
[3.2]

J. Maget, R. Kraus, M. Tiebout. Voltage-controlled substrate structure for integrated

inductors in standard digital CMOS technologies [C]. ESSDERC2002, Session D15: new
device concepts, 2002.

84


[3.3]

LIU Chang, CHEN Xue-liang and YAN Jin-long. Substrate pn junction isolation for RF
integrated inductors on silicon. CHINESE JOURNAL OF SEMICONDUCTORS,
2001,22(12):1486-1489.

[3.4]

Chang Chiaming Alex, Tseng Sung-pi, Yi Jun Chuang, Shiue-Shr Jiang, and J. Andrew
Yeh. Characterization of Spiral Inductors With Patterned Floating Structures [J]. IEEE
Transactions on Microwave Theory and Techniques, 2004, 52(5):1375-1381

[3.5] Hongyan Jian, Zhangwen Tang, Jie He, Jinglan He, Min Hao. Standard CMOS Technology
On-chip Inductors with pn Junctions Substrate Isolation [C]. 2004 International
Conference on Solid-State and Integrated-Circuit Technology (ICSICT) Beijing, China
2004, A3.13: 194-197.
[3.6] . PN [P].
200410067600,:2004 10 28
[3.7] .
[P].200410067598,:2004 10 28
[3.8] . [P].
200510023534.7,:2005 1 25
[3.9] Hau-Yiu Tsui; Lau, J.
vertical solenoid

Experimental results and die area efficient self-shielded on-chip

nductors for multi-GHz CMOS RFIC [C]. IEEE Radio Frequency

Integrated Circuits (RFIC) Symposium, 2003 , 8-10: 243 246.

[3.10] Wei-Zen Chen; Wen-Hui Chen. Symmetric 3D passive components for RF ICs application
[C]. IEEE Radio Frequency Integrated Circuits (RFIC) Symposium,2003, 8-10: 599 602.
[3.11] Ohmi, T.; Sugawa, S.; Kotani, K.; Hirayama, M.; Morimoto, A.. New paradigm of silicon
technology [C]. Proceedings of the IEEE 2001, 89(3): 394 412.
[3.12] Jan Craninckx, and Michiel S. J. Steyaert. A 1.8-GHz Low-Phase-Noise CMOS VCO
Using Optimized Hollow Spiral Inductors [J]. IEEE JOURNAL OF SOLID-STATE
CIRCUITS, 1997, 32(5): 736-744.
[3.13] Jos M. Lpez-Villegas , Josep Samitier, Charles Can, Pere Losantos, and Joan Bausells.
Improvement of the Quality Factor of RF Integrated Inductors by Layout Optimization [J].
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2000, 48(1):
76-83.
[3.14] Faraji-Dana, R.; Chow, Y.L.. AC resistance of two coupled strip conductors [C]. IEE
Proceedings

Microwaves,

Antennas

and

Propagation

[see

also

IEE

Proceedings-Microwaves, Antennas and Propagation], 1991, 138(1):37 45.

[3.15] . [P].

85


200410067599.7,:2004 10 28
[3.16] L.F. Tiemeijer et al.. Record Q Spiral Inductors in Standard CMOS [C]. International
Electron Devices Meeting Technical Digest, 2001, 949-951.
[3.17] Wang, S.; deRooij, M.A.; Odendaal, W.G.; vanWyk, J.D.; Boroyevich, D.. Reduction of
High-Frequency Conduction Losses Using a Planar Litz Structure [J]. IEEE Transactions
on Power Electronics, 2005,vol:20(2):261 267.
[3.18] Yong-Zhong Xiong. Investigation of silicon substrate thickness effects on inductor
C. 5th
International Conference on ASIC, 2003. Proceedings. 2003, 2(21-24):1120 1123.
[3.19] LIU Chang, CHEN Xue-liang and YAN Jin-long. Substrate pn junction isolation for RF
integrated inductors on siliconJ. CHINESE JOURNAL OF SEMICONDUCTORS,
2001,22(12):1486.
[3.20] J. Maget, R. Kraus, M. Tiebout. Voltage-controlled substrate structure for integrated
inductors in standard digital CMOS technologiesC. ESSDERC2002, Session D15: new
device concepts, 2002.
[3.21] Jian Hongyan, Tang Jue, Tang Zhangwen, He Jie, Min Hao. Patterned Dual pn Junctions
Restraining Substrate Loss of On-Chip Inductor J . CHINESE JOURNAL OF
SEMICONDUCTORS , in press.
[3.22] Hongyan Jian, Zhangwen Tang, Jie He, Jinglan He, Hao Min. Standard CMOS Technology
On-Chip Inductors with pn Junctions Substrate IsolationC.

ASP-DAC 2005, Jan.

18-25, 2005, Shanghai China, Special Session: University Design ContestDC3D

5.
[3.23] Yue, C.P.; Wong, S.S.. On-chip spiral inductors with patterned ground shields for Si-based
RF IcsC.

IEEE Journal of Solid-State Circuits, 1998, 33(5):743 752.

[3.24] Murata, K.; Hosaka, T.; Sugimoto, Y.. Effect of a ground shield of a silicon on-chip spiral
inductorC. Asia-Pacific Microwave Conference, 2000, 3-6:177 180.
[3.25] Seong-Mo Yim; Tong Chen; O, K.K.. The effects of a ground shield on the characteristics
and performance of spiral inductorsJ.

IEEE Journal of Solid-State Circuits, 2002,

37(2):237 244.
[3.26] Pun, A.L.L.; Yeung, T.; Lau, J.; Clement, J.R.; Su, D.K.. Substrate noise coupling through
planar spiral inductorJ. IEEE Journal of Solid-State Circuits, 1998, 33(6):877 884.
[3.27] Maget, J.; Tiebout, M.; Kraus, R. MOS varactors with n- and p-type gates and their
influence on an LC-VCO in digital CMOS [J]. IEEE Journal of Solid-State Circuits, 2003,
38(7):1139 1147.
[3.28] Hyunwon Moon; Sungweon Kang; Youn Tae Kim; Kwyro Lee. A fully differential

86


LC-VCO using a new varactor control structure[J]. IEEE Microwave and Wireless
Components Letters, 2004, 14(9):410 412.
[3.29] Yao-Huang Kao; Meng-Ting Hsu. Theoretical analysis of low phase noise design of
CMOS VCO [J]. IEEE Microwave and Wireless Components Letters, 2005, 15(1)::33
35.

87

0.35m 4CMOS

4.1

S
nH

pick off[4.1-4.2]de-embedding

1nH

Tero Kaija
Eero O. Ristolainen [4.3] CMOS

Tero Kaija Eero O.

Ristolainen Wheeler [4.4]

[4.5]

[4.2]

88


4.1.1

GSGSGGSGSG
GGround SSignal
GSG
GSG 4.1a
4.1b
a
b

b GSG

b
Ground shielding metal

4.1.

4.1a 4.1b

4.2 DUTDevice Under Test

4.2a 4.2b
RS LS
CS
Cox Rsub Csub
RC
S

4.2 (a) (b)

89

[4.6]
B

4.3(a)

Thru

Inductor

Open

G S

G S

Very low-parasites Connection

4.3
a
b
c

4.3b 4.3c

CllClgClgf
Cox-lg Clg ClgfRS LS

G S G
G S G
(a)
4.4

(b)

(c)

0.35 m CMOS
90

0.35m CMOS
380m 4.4a
250m
4.4b 200m 4.3(a)

GSG 4.4(c)

1 GSG S Y
YOpenYThruYPad

2
YSL_Open =YOpenYPad

4.1

YSL_Thru =YThruYPad

4.2

CSL =

11
image(YSL_Open
)

4.3

3 YSL_Thru Z ZSL_Thru

R SL =real(Z11SL_Thru )
LSL =

4.5

image(Z11SL_Thru )

4.4
4.5

4.5

4.1.2 [4.7]

Ldut Lde
91


Lde/ Ldut

1 GSG S Y
YOpen_measYThru_measYPad_meas

2
YSL_Open_cal =YOpen_measYPad_meas

4.6

Y0SL_Thru_cal =YThru_measYPad_meas

4.7

3) Y YPSL_Open
YPSL_Open= YSL_Open_cal + YPad_meas

4.8

4 Y Z
0
0
YSL_Thru_cal
ZSL_Thru_cal

5)
0
Z11, SL _ Thru _ cal = Z11,SL_Thru_cal
0
Z12, SL _ Thru _ cal = Z12,SL_Thru_cal

Z 21, SL _ Thru _ cal = Z021,SL_Thru_cal

Z 22, SL _ Thru _ cal = Z022,SL_Thru_cal

6 Z Y
ZSL_Thru_cal YSL_Thru_cal

7) Y YPSL_Thru_cal
YPSL_Thru_cal = YSL_Thru_cal + YPad_meas

4.9

8) Y S
YPSL_Thru_cal SPSL_Thru_cal
YPSL_Open_cal SPSL_Open_cal

4.10

S
S [4.2]
4.6 S
S11S22S12S21 4.6 20GHz

92

4.6 S

4.2
Q

4.7 0.35 m

4.8 0.35 m

4.2.1
0.35 mCMOS
4.7CMOS4.8CMOS

93

Cascade Microtech GSGS

[4.2]4.9

4.9

4.2.2

4.1 4.10 4.11

4.12 4.13

4.1

nH

2@h (m3//m4)

12

1.05

13936

1.00

7.2e-5

131.1

3@h (m3//m4)

12

1.05

17187

1.34

7.8e-5

93

144.15

4@h (m3//m4)

12

1.05

20779

2.50

1.2e-4

93

157.2

5@h (m3//m4)

12

1.05

24712

3.91

1.6e-4

93

170.25

6@h (m3//m4)

12

1.05

28985

5.97

2.1e-4

L9

48

60

4@v(m1-m2- m3-m4)

12

3600

1.00

2.8e-4

L6

68

80

4@v(m1-m2- m3-m4)

12

6400

1.41

2.2e-4

L2

88

100

4@v(m1-m2- m3-m4)

12

10000

2.00

2.0e-4

L18

108

120

4@v(m1-m2- m3-m4)

12

14400

2.78

1.9e-4

L32

68

80

2@v(m1//m2- m3//m4)

12

6400

1.00

1.6e-4

L33

68

80

2@v(m2-m4)

12

6400

1.00

1.6e-4

L7

69

86

4@v(m1-m2- m3-m4)

17

7396

1.26

1.7e-4

L15

115

127

3@h4@v(m1-m2-m3-

12

1.5

16129

9.90

6.1e-4

L12

93

118.05

L5

93

L11

L4

L16

m4)

94

4.10

4.11

4.12

4.13

40GHz 4.12- 4.14

10

4.1 4.10 4.13

L15

3
1nH (L9)
(L12)
L5 L15
L15 L5 8

4
95

[3.83.9

()
]

4.14 4 1nH

4.14 4 1nH
1 L33 2 4
L33

2L33 L9
L33
3L9 1 4
L9
L9

4L12 L32
QL12 QL32
5 L32
L12 L32 L12 2.29
2.22 L32 L12 L32
L32
L12
2.1Qmax

L12 Qmax

6L33 L32 L33 2

3
L32 1 2 3 4
L33
L32

96


4.2.3

Leq1 Leq2 DCM

Ceq1 Ceq2
RatiofSR =

L C
fSRL1
= eq2 eq 2
L2
fSR
Leq1 Ceq 1

4.11

2.9a 2.9b
Cm_m
Cm_m/Cm_s_diff :

RatiofSR =

fSR _ diff
fSR _ se

4 + Cm_ m /Cm_ s _ diff

4.12

1+ Cm_ m /Cm_ s _ diff

Cm_m Cm_s_diff 4.12 2 Cm_s_diff

Cm_m 4.12 4Cm_ s _ diff +Cm_ m Cm_ m = 1
Cm_ s _ diff + Cm_ m

Cm_ m

1<

fSR_ diff _ symm

fSR_ se _ symm

<2

4.13

4.15 Ratio f SR
RatioC (=Cm_s _diff /Cm_m ) Ratio f SR RatioC

4.15

4.16 1 L1

Ratio f SR

n-well L2 Q fSR

RatioC (=Cm_s _diff /Cm_m )

Cm_s Cm_s
97


Cm_s Q

Cm_m
Cm_s
RatiofSR =

L1
fSRL1 C m_ s + Cm_ m
=
fSRL2 C mL2_ s + Cm_ m

4.14

4.16 L1 L2 L1
L2 n

Cm_s n
p pn pn
pn
Cm_s

fSRL2_ se
191%
fSRL1_ se

fSRL1_ diff
fSRL2_ diff
4.134.14 4.16 L1_ se 192% L1_ diff 123%
fSR
fSR
fSRL2_ diff
124%
fSRL2_ se
Cm_s Cm_m
Q fSR [4.8]
4.2 DCM fSR

fSR

L1se

L2se

L3se

L4se

L5se

Error(%)

6.4

8.2

5.6

7.3

6.7

fSR
Error(%)

L6se
7.2

L1diff L2diff L3diff L4diff L5diff L6diff

8.3

9.2

6.4

9.5

7.8

8.9

4.2 (fSR)

( Ratio f SR ) 10%

98

1 2
3

4.17 Cm_m Q fSR

99


4.2.4 [4.9-4.10]

4.17 3.10 Cm_m Q fSR

L3 3.10 (b)L5 3.10aL4 L6
[2.9(a) ]L3 L5
L3 L4L5 L6L3L41234
L5L634
fSR
Cm_m
4.2.5

4. 18

4. 19
se diff

4.2.5.1

4.18 L6 L7
L7 L6 L7

L6 4.1
L7 L6
Cm_s
QL6> QL7
4.19 L1

L4 m4//m3//m2//m1m4//m3//m2m4//m3m4

100

4.20 4 3

4.21

4.2.5.2

0.35m 2p4m4

44.204.21
MS
diffse

4.22

4.22

101


4.21

15

4.3 4.8
/

,m

, m

,
m

L20

0.65

0.65

L19

0.65

0.65

L25

3.9

0.65

0.825

L24

5.4

0.675

0.9

L27

17

1.05

L26

17

1.05

A
4.204.3

4.23

40

4.9
4.20

4.23
102


Ls
Cs

Port1

Port2

C ox
C sub

Ls

Rs

Rs
Cs

C ox
R sub

R sub

C sub

Csub,s Rsub,s

b
4.24

4.24
a
b
LSRSCoxCS
RsubCsub
Rsub,sCsub,s
4.25

4.25a

4.25b
4.23

4.25 (a)(b)

103

4.26

4.27 (a)(b)

B
4.26L19L20
5 L26L27

L20L26L19L27

4.27

4.264.27

104

4.27b
2.27

3.303.32

4.2.6

[4.11]

4.29 pn

105

4.2.6.1 pn
4.29 pn pn
VR p
n pn
3.3Vn 1.1m

4.30 abc

4.30
4.30a n 0V 3V
19 pn

4V
3.3V n-well pn
7V pn 19

106


pn n

4.30(b)(c)
pn
pn

4.2.6.2

4.310.35m 2p4m CMOS

4.4

4.31
4.4

Qmax

fQmax(GHz)

fself(GHz)

L4

m3//m4

m1G-pb

8.6

4.85

10.70

L5

m3//m4

m1G-slot

8.2

4.80

10.75

L6

m3//m4

poly2G-pb

9.2

5.55

11.40

L7

m3//m4

nG-pb

10.2

5.55

11.6

L2

m1//m2//m3//m4

60m

9.0

3.00

8.65

L8

m1//m2//m3//m4

nR-pb

60m

9.1

3.00

8.55

L11

m1//m2//m3//m4

pRnR-pb

60m

9.3

3.55

8.30

*ppnnR10kGpp
slot
107


4.32

L4
L5
L4L5L4
L5

(b)

4.32ab

(a)

(b)

4.33

4.34 pn

108

4.33
4 3

Ls Rs
L4L6 L7 Rs Rs4>Rs6>Rs7

L7L6 L4
4.34 pn
4 1 L2 L8 L11
n pn nw-p n p pn
p+-nw-ppn nw-p pn
p+-nw-p nw-p p n
n

L2
L8 L11 Rs Rs2>Rs8>Rs11

pn pn
L2 L8 L11
L2L8 L11
pn pn

4.2.6.3

4.35
LC VCOPA

109

4.35

4.3

pn
pn
pn pn
pn

110

[4.1] Tiemeijer, L.F. and Havens, R.J.. A calibrated lumped-element de-embedding technique for
on-wafer RF characterization of high-quality inductors and high-speed transistorsJ. IEEE
Transactions on Electron Devices, 2003, 50(3): 822-829.
[4.2] Maget, J., VARACTORS AND INDUCTORS FOR INTEGRATED RF CIRCUITS IN
STANDARD MOS TECHNOLOGIES [D], Dept. of Electr. Eng., Univ. of Bundeswehr,
Neubiberg, Germany, 2002.
[4.3] Kaija, T. and Ristolainen, E.O.. An experimental study of scalability in shield-based
on-wafer CMOS test fixturesJ. IEEE Transactions on Microwave Theory and Techniques,
2004,523
945-953.
[4.4] Wheeler H. A.. Transmission-line properties of a strip on a dielectric sheet on a planeJ.
IEEE Trans. Microwave Theory Tech., 1977, 25(8) 631-747.
[4.5] Kaija, T. and Ristolainen, E.. Scalable ground-shielded open fixture applied to
de-embedding techniquesC. International Conference on Microelectronic Test Structures,
2003. 2003(3):85-90.
[4.6] Kolding, T.E., Jensen, O.K. and Larsen, T.. Ground-shielded measuring technique for
accurate on-wafer characterization of RF CMOS devicesC. Proceedings of the 2000
International

Conference

on

Microelectronic

Test

Structures,

2000.

ICMTS

2000, 13-16:246-251.
[4.7] .
[J].
[4.8] Hongyan Jian, Zhangwen Tang, Jie He, Hao Min. Analysis of Self-resonant Frequency for
Differential-driven Symmetric and Single-ended Inductors [J]. 2004 International
Conference on Solid-State and Integrated-Circuit Technology (ICSICT) Beijing, China,
2004, A3.13:194-197.
[4.9] Hongyan Jian, Zhangwen Tang, Jie He, Hao Min. Analysis and Optimum Design of
Differential Inductors Using the Distributed Capacitance Model [J]. Chinese Journal of
Semiconductors, in press.
[4.10] .
[P]. 200410067598,:20041028
[4.11] Hongyan Jian, Zhangwen Tang, Jie He, Jinglan He, Hao Min. Standard CMOS
Technology On-Chip Inductors with pn Junctions Substrate Isolation [C]. ASP-DAC
2005, Jan. 18-25, 2005, Shanghai China, Special Session: University Design
Contest2005, DC3D5.

111

5.1

40

112

LITZLITZ

pnpnpn
pn
pn
LC VCO

pnpn

LCR

5.2

1)2

3
4pn

113

5)

6)

EDA

114

j
j=E E E

ld r

(1)
dldrH
1 r
H =
j 2 rdr j H
2r 0

H
(2)
E = l dr
t
ABCD
E (r) r BC AD
AB CD
E
U = l [E (r + dr E (r )] =
ldr
r
115

(3)


j D C t ABCD
ABCD
E (r +dr) E (r )
r

E
H
=
r
t

1 r
j rdr j=E
r 0
E r j
r E
=
rdr =
rdr
r 0 t
r 0 t
r

(4)

E (r +t) H =

(5)

r E
E
=
rdr
0 t
r

(6)

r
E
E
= r
r
r r
t

(7)

E%

~
E
~
= iE
t
~
~
2 E 1 E
~
+
iE
2
r r
r

(8)

~
~
~
E r E j
~
~ ~
E E j r
~ ~
E j r

~
1 E

r r

~
2E
~
= iE
2
r

116

(9)

(10)

~
E = E 0 e ( r0 r ) i ( r0 r ) e it

(11)

r0

E = E 0 e ( r0 r ) cos[t (r0 r )]

(12)

j = E 0 e ( r0 r ) cos[t (r0 r )]

(13)

E j r
e ( r0 r ) E 0 e ( r0 r )

r 0

(14)

e
0.368

117

o2

r2

d
o1

r1

r1 r2
d
S1S2 I1I2 1 d

I
B(d ) = 0 1
2

r22
d 2 + r12

V2 ( I 2 = 0) = Stag

dB
dt

V1 = j L1 I1 + j MI 2

V2 = j L2 I 2 + j MI1

M = k L1 L2

14
r r
k1,2 = 21 2 2
r1 + d

3
2

118

S Y

S Y

S meas , DUT Ymeas , DUT ;

S meas , DUT Ymeas , DUT ;

S meas ,Thru Ymeas ,Thru

S meas ,Thort Ymeas ,Thort

S meas ,open Ymeas ,open ;

S meas ,open Ymeas ,open ;

YDUT ,Open = Ymeas , DUT Ymeas ,open

YDUT ,Open = Ymeas , DUT Ymeas ,open

YThru ,Open = Ymeas ,Thru Ymeas ,open

YThort ,Open = Ymeas ,Thort Ymeas ,open

Y Z

Y Z

YDUT ,Open Z DUT ,Open ;

YDUT ,Open Z DUT ,Open ;

YShru ,Open Z Shru ,Open

YShort ,Open Z Short ,Open

1
Z11, DUT = Z11, DUT _ Open Z11,Thru _ Open
2
Z12, DUT = Z12, DUT _ Open ;

Z DUT = Z DUT _ Open Z Short _ Open

Z 21, DUT = Z 21, DUT _ Open

1
Z 22, DUT = Z 22, DUT _ Open Z 22,Thru _ Open
2

Z S

Z S

Z DUT S DUT

Z DUT S DUT

* ZThru-Open Z
1 2 Z

Y11 =

(1 S11 )(1 + S22 ) S12 S21

Z 0 (1 + S11 )(1 + S 22 ) S12 S 21

S11 =

Y12 =

2 S12
Z 0 (1 + S11 )(1 + S 22 ) S12 S 21

( Z11 Z 0 )( Z 22 Z 0 ) Z12 Z 21
( Z11 + Z 0 )( Z 22 + Z 0 ) Z12 Z 21

S12 =

Y21 =

2 S 21
Z 0 (1 + S11 )(1 + S 22 ) S12 S 21

2 Z12 Z 0
( Z11 + Z 0 )( Z 22 + Z 0 ) Z12 Z 21

S 21 =

2 Z 21Z 0
( Z11 + Z 0 )( Z 22 + Z 0 ) Z12 Z 21

S 22 =

( Z11 + Z 0 )( Z 22 Z 0 ) Z12 Z 21
( Z11 + Z 0 )( Z 22 + Z 0 ) Z12 Z 21

(1 + S11 )(1 S22 ) S12 S21

Z 0 (1 + S11 )(1 + S 22 ) S12 S 21
1
Z = (Y )

Y22 =

119

,
Z Y h ABCD

ABCD ABCD
ABCD

ABCD
vin A B v out
=

iin C D iout
A=

Vin
Vout

for Iout=0

B=

Vin
I out

for Vout=0

C=

I in
Vout

for Iout=0

D=

I in
I out

for Vout=0

120


Z IN =

ZL A + B
Z LC + D

Z OUT =

ZS D + B
ZSC + A

AVF =

ZL
AD BC
AVR =
B
ZL A + B
D+
ZS

ABCD

S
an bn

an =

bn =

1
2 Z0
1
2 Z0

(Vn + Z 0 I n )
(Vn Z 0 I n )

n 12 Z0

b1 S11
=
b2 S 21

S12 a1

S 22 a 2

S11 =

b1
a1

for a2=0

S 21 =

b2
a1

for a2=0

S 22 =

b2
a2

for a1=0

S12 =

b1
a2

for a1=0

S11 1 S22

1 2 S21 2
S12 1
S21S12S11S22
S S

121

55

122