,r'

Cairo University Faculty of Engineering Depaft ment of Electronics

Electronics(1)- ELC101(B)

and Cornmuaicat;ons Enginer;ng 6izo Campus

Quizl-May2013
Time allowed : 75 Minutes Number of Pages: 5

Question 1( 7 Point ).
Put a circle around the letter corresponding to

the best answer for each of the following. Each

MCQ is of 0.5 point grade.

For the circuit in Fig.1: Vtn=1V, pn*cox=20pA lV2,L= 1um for all transistors, W1=W2=10um,and W3=W4 = 40um, neglect channel length effect ( l,=0)

1..

{s-r--o Q, s^t
12=

a)0.45mA.

t
i
l

@o.s'n.

c) 0.225 mA. d) None ofthe above.

i
I
t

,_-_*l

2. V2=.....................

6lz.sv.
b) 1.sv. c) 1V.
d) None ofthe above.

*t),:

Srrbsfifae

in

o)25 aQrh^,= oAto/,),

- u'

>'i1tqt=

o,,J n a
^

3.

lf width of transistors Q3 and Q4 increases by the same value, then 12will increecp and and\/?*rill a) 12 will increase, V2 will lnrraeco lncrease.

...........
=

Tn,, * *Y4= - t'l'JhA

will decrease, andV2 will decrease_ , @Zwill increase, and V2 will not change K d) None ofthe above. Note: This change in width of e3 doesn't affect its region of operation.
12
.

b)

ry/l>,

-wJz

o,3 =

tvlrar U3 incft^ror K{i" bclrre-n wdth oD e3 tl^.& uilfl, ope, Uitl lncy.*S
7/s

4ct

-vr*w)z

Terlvt.

L--=--__l
/z
o$o,n

/t'l 1o

aS5nme ur= [r ttr= o t|n

\ '^A&' Colc'ttl"l<

:D

4.

The bulk terminal of Q2 , fourth terminal of transistor which represents the body transistor, should be connected to S

a) Source of b) Supply = 5Y.

Q2.

...................

h e-t ,r -H

p_ P- sqlv^/, sq [yra/"

&_'

_> A k-/-''z

For the circuit in Fig.2:assume Ml. operates in saturation region, Kn >Kp, neglect channel length effect

thwutt'
Pn
f,a^Cl'r^

l,=0)

5.

absolute value of voltage gain

fal;L1

b) < 1

always c) =1 d)can'tbe

h P'

'

determined

q^il ffi;;' + vin

S, Sr
Yt4

G,

*\hq+

rcllac.

b; -.-4--

,---,-l*;"' Ac 4oJe1 Rc A;J.i m_mf .fe=$il --1 Hr=

t[:ansamt-"rfr"

"ffi
aitt Tz 1Ao.l
t.a( efi*4,;tq
Yoo

lf

DC

component of Vin increases, then

#r

of voltage gain will ....

.@b)increasec)decreased)can'tbedetermined

bC

GnPoncn"l ixcl'6,rSe-

\A'\-

lf DC current source was added to previous circuit as shown in Fig.3, then the absolute value of voltase eain will

+r= ffi + T, s*rr e9u*t

=) b:, 1--* Yrf -+_fzf

arI
vi"*{ {r, Ml : Fig.3 uitl ,tACW'Sc
ts

a)notchange@c)decreased)can,tbedetermined

Tr

:rz-t;ll -f,

uilt bc X[^+,. ttr unT.

thcn lA.'l
For the circuit in Fig.2

=+_,1lift
drr,
=

.15*-,,
oo

a) Rin = 0, Ai= 0 b) Rin = -, Ai= 0

c)Rin=x,Ai =rc
Rin=0,Ai

Q=o

Rin =

u/i,

=-

:- od Ai=4 ci

Ao=

--tn, = -{ :kar, _\ :--/ $n,

{ tKtry,
TtJt-

.'h>Kp

9.

For the circuit in Fig.4, lf Vin 0 then Vout = = , a)

Vix =6

9[:J,"

d)vdd,
vlD-l

Vt\)r,-f_/e]*;l_1,

_+ Vt:1r., c * Vor * = vorr{ fluj+ br

FaS,i17g*:}

', c

*tp
_o
v6'''' "

VnI
ltt+ *l

*=-p r)ry2-+rVsJ-\VtA,

i0. ForthecircuitinFig. , rrVin=vaa,tr,efY:},;jju-.:ll=

a) Vdd

t
ulo

Vin- \lctot

vrt)..,

b)0

Vout

@raa-vtn
d) lvtpl

(\os L
.

voa4-

Fig.4

v$)nz-_GVe)

11. rhe circujt in Fig.5 represent cMos CMOS inverter,Ronp and Ronn is the equivalent
PMOS and NMOS respectively in triode region

r*;;;#;J;';;'.r;:,,",

;i*i - l3*&{
res;i

=> Az o fu
-4

static power consumption in this inverter = a)Vdd*tDP

b) Vdd2

/(

Ronp+Ronn)

La5*

LeCure

d) None ofthe above

r--J
I

L_-

12. For the circuit in Fig.5, lf Vin 0 then Vout = , I Flvdd

b) Vdd-Vtn

c) d) None ofthe above

lVtpl

Jcf

('{

t la'r (^l heCK ^teXt

:

I iJutl

3/s

13. The inverter in Fig.4 has a voltage transfer characteristic { relation between input and output waveform ) as shown in Fig.6

vil
Mn Mp

Vm

off
Ohmic

X1 x2

X3

X5 X6

Ohmic

x4

off

Fig. 5

The missing regions are x2

Sat

Lc'
X3

il

,e'.'

i rt {c
X5

X1 (a)

x4
Sat Sat

X6 Sat Sat Sat Sat

Sat Sat

triode
Sat

triode triode triode

(ID
(c)

triode triode

off
Sat

Sat Sat

triode
Sat

(d)

off

off

14. The CMOS transmission gate consists of

a) only PMOS transistor.

b) only NMOS transistor.

Q90th of
d)
BJT

PMOS and NMOS transistors.

transistor.

4/s

*ffif;,n"circuitinFig.7,assUmeM1,andM2operateinsaturationregion,neglect

e?1r,5,

bnh{

Rr
0,r, Vgb
J

.{

:)

( o,t)

/'o $e{

4- J

}rcl o,{ bo**

i
Fis.7

r\ Mr-.- (r.

R.

s,,5. +
i L,
R ou'4;=

TX=

t n, \;, W

R'*R, i

@d*a,aae@

vr.=

w *n5*.

":

giiqq'

*;l

n'*R, )uX