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Agenda Introduction Different types of EMI and their characteristics Regulations and standards for EMI Measurement and sources of EMI Conducted EMI Radiated EMI EMI as integral part of the design flow Conclusion
Company Confidential
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Introduction EMI more and more complex Increasing power density, faster switching, higher currents are causing g more EMI-related issues Conducted / radiated EMI Further changes complicating things New semiconductor switches are faster New topologies (e.g. Quasi-resonant) How to achieve hi a robust b design? d i ? Embed EMI into the design flow from the beginning What is the goal? Emit low EMI levels to meet regulations (dont disturb other applications nearby) EMI compliance Work properly (be self-compliant) Robustness
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Agenda Introduction Different types of EMI and their characteristics Regulations and standards for EMI Measurement and sources of EMI Conducted EMI Radiated EMI EMI as integral part of the design flow Conclusion
Company Confidential
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Galvanic Coupling
Inductive Coupling
Wave Coupling
Galvanic coupling of signals in the circuit Typically <30MHz Any noisy An nois signal in the system (RC) filtering
Company Confidential
Radiated wave traveling in the system High frequencies Fast switching s itching Electromagnetic shield
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Agenda Introduction Different types of EMI and their characteristics Regulations and standards for EMI Measurement and sources of EMI Conducted EMI Radiated EMI EMI as integral part of the design flow Conclusion
Company Confidential
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Regulations and standard for EMI EN550xx and EN61000 most important
Two main considerations: Limit the amount of emission which a given application generates Define minimum immunity levels a given application must tolerate EN550xx the EMI norm (class A = consumer, class B = industrial)
CISPR11, EN55011 for industrial, medical, scientific applications CISPR13, EN55013 for consumer applications CISPR14 EN55014 for CISPR14, f home h appliances, li power tools, t l involving i l i motion ti control t l CISPR15, EN55015 for lighting equipment CISPR22, EN55022 for computing applications CISPR16, EN55016 defines the measurement method
Many applications being tested against a mix of different norms (e.g. EN55022 for frequencies >150kHz, EN55015 for frequencies <150kHz) EN61000 the PFC norm (equipment classes see next page)
Noise current up to the 40th harmonic of the line frequency ( <= 2.0kHz 2 0kHz (e (e.g. g EU) / 2.4kHz 2 4kHz (e.g. (e g US)) EN61000-3-2 for applications < 16A EN61000-3-12 for applications with 16A75A EN61000-4-7 defines the measurement and evaluation method EN61000 4 16 for common EN61000-4-16 common-mode mode disturbances up to 150kHz Many further standards exist, dealing with more specialized applications EN61000 specifies maximum harmonic currents, not a power factor
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Company Confidential
> 75W
Lighting
> 25W
Lighting
Company Confidential
Company Confidential
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Agenda Introduction Different types of EMI and their characteristics Regulations and standards for EMI Measurement and sources of EMI Conducted EMI Radiated EMI EMI as integral part of the design flow Conclusion
Company Confidential
Page 10
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Line Impedance Stabilizer Network (LISN): - Defined impedance for noise voltage measurement - Blocking the noise coming from the grid
Company Confidential
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Frequency Limit (dbuV) Limit (V) Comment 9kHz ... 50kHz 110 316mV EN55011 Quasipeak 50kHz ... 150kHz 90 ... 80 32mV ... 10mV EN55011 Quasipeak EN55022 B, B Quasi-peak; Quasi peak; linearly falling 66 ... 56 2mV ... 0.63mV with log (frequency) 150kHz ... 500kHz EN55022 B, Average; linearly falling with 56 ... 46 0.63mV ... 0.2mV log (frequency) 56 630uV EN55022 B, Quasi-peak 0.5MHz ... 5MHz 46 200uV EN55022 B, Average 60 1mV EN55022 B, Quasi-peak 5MHz ... 30MHz 50 316uV EN55022 B, Average
Frequency range 9kHz ... 150kHz 150kHz ... 30MHz 30MHz ... 1GHz
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2 CM noise current
Ground
Parasitic Coupling
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Company Confidential
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Pi filter 18 db / oct 60 db / dec T filter 18 db / oct 60 db / dec L filter filt 12 db / oct 40 db / dec
(Calculation of component values is explained later)
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Conducted EMI Common mode vs differential mode For common mode noise, the line to line capacitors do not help
Only y the inductors contribute (but ( typically yp y they y are too small) )
Input data
Line frequency Minimal RMS voltage Maximum RMS load current Lowest switching frequency
Attenuation
Determine suitable filter topology and cutoff frequency so attenuation goals are met with a margin g g of 6...10dB (but fcut > 10* fLine)
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Conducted EMI Simulation and results Simulation for compliance: Noise generation and filter attenuation are mostly y determined by yp parasitic elements in the circuit Noise generation: Leakage inductance, ESR, ESL, capacitive coupling (to ground) Attenuation: Core frequency response, capacitive coupling Most simulators allow to set parasitics for all passive components Using a behavioural model for the noise (current) source is a good approximation Simulation for function and robustness: Very complex better to design accordingly, test a prototype, implement fixes in final circuit
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Capacitor
Transformer
CM choke
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DM filter (T type)
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with filter
EN55022 limits (quasi-peak)
Company Confidential
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Agenda Introduction Different types of EMI and their characteristics Regulations and standards for EMI Measurement and sources of EMI Conducted EMI Radiated EMI EMI as integral part of the design flow Conclusion
Company Confidential
Page 22
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Vnoise =
RM RS + RM
*M*
dI dt
RS
Vnoise + Vmeas RM
Coupling factor M depends on: Distance, Di t area and d orientation i t ti of f the th disturbing magnetic loops Magnetic absorption between the loops Current risetime Impedance of the receiver
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Company Confidential
Company Confidential
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Company Confidential
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Radiated EMI How to identify hot spots Use a two-channel scope Connect a (HV) probe to the main switching signal Connect the H-field probe to a probe amplifier (if necessary) and to the second channel (proper termination required) Use the main switching signal as a trigger signal Wander around the PCB to identify areas of large emission, then zoom in Take (static) pictures of the critical field signals to determine q y and quality q y factor ( (this can be used to identify y the frequency elements of the resonant tanks)
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Company Confidential
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Company Confidential
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Fast snubber diode gives faster rise / fall times and lower losses Slow diode with much larger Qrr shows significant magnetic EMI Impact can not be seen in the node voltage need to investigate magnetic field to find out
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At MOSFET
At Diode
Inside inductor
Medium EMI spike at the MOSFET, MOSFET high frequency ( (~40MHz) 40MHz) indicates ringing between Coss (780pF) and the parasitic inductance of the PCB and package (20nH), well damped, after which the inductor ringing takes over Smaller EMI spike at the (SiC) diode shows ringing at similar frequency, indicating that this is imposed p by y the power p MOSFET ( (in this case, , the equivalent q charge g of the diode is 100x smaller so the contribution is too) Long ringing tail of the inductor shows the energy flowing between the inductor and its parasitic capacitance g( (distributed air gap) g p) and the tail lasts for 800ns ( (high g Q) Field is strong Ringing frequency is ~9MHz, parasitic cap ~20pF (estimated) effective inductance is reduced by 40x at this frequency! (core material)
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Company Confidential
Company Confidential
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Prototype Prototype
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Production Production
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