UNISONIC TECHNOLOGIES CO.

, LTD 10N60
10 Amps, 600/650 Volts N-CHANNEL POWER MOSFET
DESCRIPTION

Power MOSFET

The UTC 10N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.

FEATURES
*Pb-free plating product number: 10N60L

* 10A, 600V, RDS(ON) =0.73@VGS =10V * Low gate charge ( typical 44 nC) * Low Crss ( typical 18 pF) * Fast switching * 100% avalanche tested * Improved dv/dt capability

SYMBOL
2.Drain

1.Gate

3.Source

ORDERING INFORMATION
Ordering Number Normal Lead Free Plating 10N60-x-TA3-T 10N60L-x-TA3-T Package TO-220 Pin Assignment 1 2 3 G D S Packing Tube

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ABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise specified)
PARAMETER Drain-Source Voltage Gate-Source Voltage Avalanche Current Continuous Drain Current Pulsed Drain Current (Note 1) Single Pulsed (Note 2) Avalanche Energy Repetitive (Note 1) Peak Diode Recovery dv/dt (Note 3) Power Dissipation Junction Temperature Operating Temperature Storage Temperature 10N60-A 10N60-B (Note 1) TC = 25C TC = 100C SYMBOL VDSS VGSS IAR ID IDM EAS EAR dv/dt PD TJ TOPR TSTG

Power MOSFET

RATINGS 600 650 30 9.5 9.5 3.3 38 700 15.6 4.5 156 +150 -55 ~ +150 -55 ~ +150

UNIT V V V A A A mJ mJ V/ns W

THERMAL DATA
PARAMETER SYMBOL JA JC RATING 62.5 0.8 UNIT C/W C/W

Junction-to-Ambient Junction-to-Case

ELECTRICAL CHARACTERISTICS( TC=25C, unless otherwise specified)

SYMBOL 10N60-A 10N60-B BVDSS BVDSS IDSS TEST CONDITIONS MIN TYP MAX UNIT V V A nA nA V/C V pF pF pF ns ns ns ns nC nC nC

PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage

VGS = 0V, ID = 250A 600 VGS = 0V, ID = 250A 650 Drain-Source Leakage Current VDS = 600V, VGS = 0V 1 Forward VGS = 30 V, VDS = 0 V 100 Gate-Source Leakage Current IGSS -100 Reverse VGS = -30 V, VDS = 0 V Breakdown Voltage Temperature Coefficient BVDSS/TJ ID = 250 A, Referenced to 25C 0.7 ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS = VGS, ID = 250A 2.0 4.0 Static Drain-Source On-State Resistance RDS(ON) VGS = 10V, ID = 4.75A 0.6 0.73 DYNAMIC CHARACTERISTICS Input Capacitance CISS 1570 2040 VDS=25V, VGS=0V, f=1.0 MHz Output Capacitance COSS 166 215 Reverse Transfer Capacitance CRSS 18 24 SWITCHING CHARACTERISTICS Turn-On Delay Time tD(ON) 23 55 Turn-On Rise Time tR VDD=300V, ID =10A, RG =25 69 150 (Note 4, 5) Turn-Off Delay Time tD(OFF) 144 300 Turn-Off Fall Time tF 77 165 Total Gate Charge QG 44 57 VDS=480V, ID=10A, VGS=10 V Gate-Source Charge QGS 6.7 (Note 4, 5) 18.5 Gate-Drain Charge QGD

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ELECTRICAL CHARACTERISTICS(Cont.)
PARAMETER SYMBOL TEST CONDITIONS DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Drain-Source Diode Forward Voltage VSD VGS = 0 V, IS =10A Maximum Continuous Drain-Source Diode IS Forward Current Maximum Pulsed Drain-Source Diode ISM Forward Current Reverse Recovery Time tRR VGS = 0 V, IS = 10A, dIF / dt = 100 A/s (Note 4) Reverse Recovery Charge QRR Note: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 14.2mH, IAS = 10A, VDD = 50V, RG = 25 Starting TJ = 25C 3. ISD 9.5A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test : Pulse width 300s, Duty cycle 2% 5. Essentially independent of operating temperature

Power MOSFET

MIN

TYP MAX UNIT 1.4 10 38 420 4.2 V A A ns C

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TEST CIRCUITS AND WAVEFORMS

Power MOSFET

D.U.T.

+ VDS -

+ L

RG Driver VGS Same Type as D.U.T. * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test VDD

Fig. 1A Peak Diode Recovery dv/dt Test Circuit

VGS (Driver)

Period P.W.

D=

P. W. Period

VGS= 10V

IFM, Body Diode Forward Current ISD (D.U.T.) IRM Body Diode Reverse Current di/dt

Body Diode Recovery dv/dt VDS (D.U.T.) VDD

Body Diode

Forward Voltage Drop

Fig. 1B Peak Diode Recovery dv/dt Waveforms

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TEST CIRCUITS AND WAVEFORMS (Cont.)

Power MOSFET

Fig. 2A Switching Test Circuit

Fig. 2B Switching Waveforms

Fig. 3A Gate Charge Test Circuit

Fig. 3B Gate Charge Waveform

L VDS BVDSS IAS RD VDD D.U.T. tp tp Time VDD

ID(t)

VDS(t)

10V

Fig. 4A Unclamped Inductive Switching Test Circuit

Fig. 4B Unclamped Inductive Switching Waveforms

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10N60

Capacitance, (pF)

Drain-Source On-Resistance, RDS(ON) ()

TYPICAL CHARACTERISTICS

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Reverse Drain Current, IDR (A)

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Gate-Source Voltage, VCG (V)

Power MOSFET

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TYPICAL CHARACTERISTICS(Cont.)

Power MOSFET

Drain-Source Breakdown Voltage, BVDSS (Normalized)

Maximum Safe Operating Area 102

Operation in this Area is United by RDM 10s

Drain Current, ID (A)

101
DC

1ms 10ms 100ms

Drain Current, ID (A) 103

100s

100
Notes: 1.TC=25 2.TJ=150 3.Single Pulse

10-1 0 10

102 101 Drain-Source Voltage, VDS (V)

Drain-Source On-Resistance, RDS(ON) (Normalized)

Maximum Drain Current vs. Case Temperature 10 8 6 4 2 0 25

50 75 100 125 Case Temperature, TC ()

150

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Transient Thermal Response Curve 100
D=0.5 0.2

Power MOSFET

10

-1

0.1 0.05 0.02 0.01 Single pulse

NOTES: 1.ZJC(t)=2.5D/W Max 2.Duty Factor,D=t1/t2 3.TJW-TC=PDW-ZJC(t)

PDW t1 t2

10-2 10-5

10-4

10-3 10-2 10-1 Square Wave Pulse Duration, t1 (sec)

100

101

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Power MOSFET

UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.

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