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General Description
The AO4604 uses advanced trench technology MOSFETs to provide excellen RDS(ON) and low gate charge. The complementary MOSFETs may be used in power inverters, and other applications. AO4604 and AO4604L are electrically identical. -RoHS Compliant -AO4604L is Halogen Free SOIC-8
S2 G2 S1 G1 1 2 3 4 8 7 6 5 D2 D2 D1 D1
Features
n-channel VDS (V) = 30V ID = 6.9A (VGS=10V) RDS(ON) < 28m (VGS=10V) < 42m (VGS=4.5V) p-channel -30V -5A (VGS = -10V) RDS(ON) < 52m (VGS = -10V) < 87m (VGS = -4.5V) 100% Rg Tested!
D2
D1
G2 S2
G1 S1
SOIC-8
Top View Bottom View
n-channel
p-channel
Absolute Maximum Ratings T A=25C unless otherwise noted Symbol Parameter Max n-channel V Drain-Source Voltage 30 DS VGS Gate-Source Voltage 20 Continuous Drain Current A Pulsed Drain Current Power Dissipation
B
Units V V A
W C
Thermal Characteristics: n-channel and p-channel Parameter t 10s Maximum Junction-to-AmbientA Steady-State Maximum Junction-to-AmbientA C Steady-State Maximum Junction-to-Lead t 10s Maximum Junction-to-AmbientA A Steady-State Maximum Junction-to-Ambient Steady-State Maximum Junction-to-LeadC
Typ 48 74 35 48 74 35
AO4604
N-CHANNEL: Electrical Characteristics (T J=25C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) gFS VSD IS Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Static Drain-Source On-Resistance VGS=4.5V, ID=5.0A Forward Transconductance Diode Forward Voltage VDS=5V, ID=6.9A IS=1A 10 Conditions ID=250 A, VGS=0V VDS=24V, V GS=0V TJ=55C VDS=0V, VGS=20V VDS=VGS ID=250 A VGS=4.5V, VDS=5V VGS=10V, ID=6.9A TJ=125C 1 20 22.5 31.3 34.5 15.4 0.76 1 3 680 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 102 77 1.2 13.84 VGS=10V, V DS=15V, ID=6.9A 6.74 1.82 3.2 4.6 VGS=10V, V DS=15V, R L=2.2, RGEN=3 IF=6.9A, dI/dt=100A/ s IF=6.9A, dI/dt=100A/ s
2
Min 30
Typ
Max
Units V
0.004
1 5 100
A nA V A
1.9
3 28 38 42
m m S V A pF pF pF
DYNAMIC PARAMETERS Input Capacitance Ciss Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance
820
2 17 8.1
nC nC nC nC ns ns ns ns
SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Qgs Qgd tD(on) tr tD(off) tf trr Qrr Total Gate Charge Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge
ns nC
A: The value of R JA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The value in any a given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead RJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using 80 s pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The SOA curve provides a single pulse rating. Rev 4: Jan 2009
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE
AO4604
30
20
10V
25 20 ID (A)
6V 5V 4.5V
16
4V
VDS=5V
12
15
3.5V
10 5 0 0 1 2 3 4 5 VDS (Volts) Fig 1: On-Region Characteristics
ID(A) 8
125C
VGS=3V
25C
0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 VGS (Volts) Figure 2: Transfer Characteristics
60
1.6 Normalized On-Resistance 1.5 1.4 1.3 1.2 1.1 1 0.9 0.8
0 5 10 15 20
50 RDS(ON) (m )
ID=5A
VGS=10V
40
VGS=4.5V
VGS=4.5V
30
20
VGS=10V
50
100
150
200
70 60 50
1.0E+01
ID=5A
IS Amps
RDS(ON) (m )
125C
40 30
125C
25C
25C
20 10 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage
1.0E-05 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body diode characteristics
AO4604
1000
VDS=15V ID=6.9A
Capacitance (pF)
f=1MHz VGS=0V
Ciss
Coss Crss
5 10 15 20 25 30
100
RDS(ON) limited
ID (Amps) 10
TJ(Max)=150C TA=25C
1ms 10ms 0.1s
100 s
40
TJ(Max)=150C TA=25C
30 Power W
10s
20
1s 10s DC
10
0.1 0.1 1 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100
0 0.001
0.01
0.1
10
100
1000
Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
PD Ton
Single Pulse
T
100 1000
0.01 0.00001
0.0001
0.001
0.01
0.1
10
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance
AO4604
+
VDC
10V
VDC
DUT
Vgs
+ Vds -
Qgs
Qgd
Ig
Charge
Vds
Vds
Vgs
Rg
DUT
+
VDC
90%
V dd
10% Vgs
t d (o n ) ton tr t d (o ff) t o ff tf
V gs
D io d e R e c o v e ry T e st C irc u it & W a ve fo rm s
Vds +
DUT
Q rr = Vgs
Id t
Vds -
Isd
Vgs
Isd
IF
t rr
d I/d t
+
VD C
Vdd
Vds
I RM Vdd
Ig
AO4604
P-CHANNEL: Electrical Characteristics (TJ=25C unless otherwise noted) Symbol Parameter Conditions ID=-250A, VGS=0V VDS=-24V, VGS=0V TJ=55C VDS=0V, VGS=20V VDS=VGS ID=-250A VGS=-4.5V, VDS=-5V VGS=-10V, ID=-5A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=-4.5V, I D=-4A Forward Transconductance Diode Forward Voltage VDS=-5V, ID=-5A IS=-1A,VGS=0V 6 TJ=125C -1 -20 39 54 67 8.6 -0.77 -1 -2.8 700 VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 120 75 10 14.7 VGS=-10V, VDS=-15V, ID=-5A 7.6 2 3.8 8.3 VGS=-10V, VDS=-15V, RL=3, RGEN=3 IF=-5A, dI/dt=100A/s
2
Min -30
Typ
Max
Units V
STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current
-1 -5 100 -1.8 -3 52 70 87
A nA V A m m S V A pF pF pF
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance
900
15 19 10
nC nC nC nC ns ns ns ns
SWITCHING PARAMETERS Qg (10V) Total Gate Charge (10V) Qg (4.5V) Total Gate Charge (4.5V) Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=-5A, dI/dt=100A/s
5 29 14 23.5 13.4 30
ns nC
A: The value of R JA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with TA =25C. The value in any a given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead RJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 s pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The SOA curve provides a single pulse rating. Rev 4: Jan 2009
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE
AO4604
10
-10V
-6V
-5V
-4.5V
8
-4V
VDS=-5V
15
-ID (A)
10
-3.5V
5
-ID(A)
125C
VGS=-3V
25C
-2.5V
0 0.00
0
1.00 2.00 3.00 4.00 5.00
100
1.60E+00
VGS=-4.5V
80 RDS(ON) (m )
Normalized On-Resistance
VGS=-4.5V
60
1.40E+00
VGS=-10V
1.20E+00
VGS=-10V
40
1.00E+00
ID=-5A
20 1 3 5 7 9
8.00E-01 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature
-ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage
1E+01
ID=-5A
125C
125C
25C
25C
1E-05 1E-06 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -VSD (Volts) Figure 6: Body-Diode Characteristics
AO4604
1200
VDS=-15V ID=-5A
8
1000
Ciss
Capacitance (pF) 800 600 400
-VGS (Volts)
Coss
200 0
Crss
0 5 10 15 20 25 30
100
TJ(Max)=150C TA=25C
RDS(ON) limited
40
10s
100 s
30 Power (W)
TJ(Max)=150C TA=25C
-ID (Amps)
10
1ms 0.1s
1
20
10ms
1s 10s DC
0.1 0.1 1 -VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100
10
0 0.001
0.01
0.1
10
100
1000
Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
PD Ton
Single Pulse
0.01 0.00001
0.0001
0.001
0.01
0.1
10
100
1000
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance
AO4604
Qg
-10V
VDC
VDC
DUT
Vgs
Ig
V ds
V gs
td(on )
V gs
Rg
DUT
V DC
V gs
V ds
DUT
V ds -
Isd
V gs Ig
VD C
+ Vdd -V ds
+
Charge
t on tr t d(o ff) t o ff tf
Vds
Qgs
Qgd
V dd
90%
10%
V gs
t rr
-Isd
-I F
d I/d t
-I R M
Vdd