AO4702 N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode

General Description The AO4702 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. A Schottky Diode is packaged in parallel to improve device performance in synchronous recitification applications, or H-bridge configurations. Standard Product AO4702 is Pb-free (meets ROHS & Sony 259 specifications).

Features
VDS (V) = 30V ID = 11A (VGS = 10V) RDS(ON) < 16m (VGS = 10V) RDS(ON) < 25m (VGS = 4.5V) SCHOTTKY VDS (V) = 30V, IF = 3A, VF<0.5V@1A UIS TESTED! Rg,Ciss,Coss,Crss Tested

D S S S G D D D D

G S A

SOIC-8

Absolute Maximum Ratings TA=25C unless otherwise noted Symbol Parameter MOSFET V DS Drain-Source Voltage 30 Gate-Source Voltage TA=25C Continuous Drain Current AF Pulsed Drain Current
B

Schottky

Units V V A

VGS TA=70C ID IDM VKA TA=25C TA=70C

B

20 11 9.3 50 30 4.4 3.2 3 2 17 43 -55 to 150 -55 to 150 30 3 2

Schottky reverse voltage Continuous Forward Current AF Pulsed Diode Forward Current Power Dissipation Avalanche Current B

V A

IF IFM

TA=25C TA=70C IAR

B

PD

W A mJ C

Repetitive avalanche energy 0.3mH

EAR TJ, TSTG

Junction and Storage Temperature Range

Alpha & Omega Semiconductor, Ltd.

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AO4702

Thermal Characteristics: MOSFET Parameter Maximum Junction-to-Ambient A A Maximum Junction-to-Ambient C Maximum Junction-to-Lead Thermal Characteristics: Schottky Parameter Maximum Junction-to-Ambient A A Maximum Junction-to-Ambient C Maximum Junction-to-Lead

Symbol t 10s Steady-State Steady-State RJA RJL

Typ 31 59 16

Max 40 75 24

Units C/W C/W C/W

Symbol t 10s Steady-State Steady-State RJA RJL

Typ 36 67 25

Max 40 75 30

Units C/W C/W C/W

A: The value of R JA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead R JL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The SOA curve provides a single pulse rating. F. The current rating is based on the t 10s junction to ambient thermal resistance rating. G. The Schottky appears in parallel with the MOSFET body diode, even though it is a separate chip. Therefore, we provide the net forward drop, capacitance and recovery characteristics of the MOSFET and Schottky. However, the thermal resistance is specified for each chip separately. Rev 6 : Dec 2006

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Alpha & Omega Semiconductor, Ltd.

www.aosmd.com

AO4702

Electrical Characteristics (TJ=25C unless otherwise noted) Symbol Parameter Conditions ID=250A, VGS=0V VR=30V VR=30V, TJ=125C VR=30V, TJ=150C VDS=0V, VGS= 20V VDS=VGS ID=250A VGS=4.5V, VDS=5V VGS=10V, ID=11A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=4.5V, ID=8A Forward Transconductance VDS=5V, ID=11A IS=1A,VGS=0V Diode + Schottky Forward Voltage Maximum Body-Diode + Schottky Continuous Current TJ=125C 1 40 13.4 16.8 20 25 0.45 0.5 5 1040 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 0.35 212 121 0.7 19.8 VGS=10V, VDS=15V, ID=11A 9.8 2.5 3.5 4.5 VGS=10V, VDS=15V, RL=1.35, RGEN=3 IF=11A, dI/dt=100A/s IF=11A, dI/dt=100A/s 3.9 17.4 3.2 19 9 7 7 30 5.7 23 11 170 0.85 24 12 1250 16 21 25 1.8 Min 30 0.007 3.2 12 0.05 10 20 100 3 mA nA V A m m S V A pF pF pF nC nC nC nC ns ns ns ns ns nC Typ Max Units V

STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current (Set by Schottky leakage) Gate-Body leakage current Gate Threshold Voltage On state drain current

DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance (FET+Schottky) Reverse Transfer Capacitance Gate resistance

SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode + Schottky Reverse Recovery Time Body Diode + Schottky Reverse Recovery Charge

A: The value of R JA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead R JL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The SOA curve provides a single pulse rating. F. The current rating is based on the t 10s junction to ambient thermal resistance rating. G. The Schottky appears in parallel with the MOSFET body diode, even though it is a separate chip. Therefore, we provide the net forward drop, capacitance and recovery characteristics of the MOSFET and Schottky. However, the thermal resistance is specified for each chip separately. Rev 6 : Dec 2006 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Alpha & Omega Semiconductor, Ltd.

www.aosmd.com

AO4702

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

30 25 20 ID (A) 15 10 5 0 0 1 2 3 4 5 VDS (Volts) Fig 1: On-Region Characteristics 24 VGS=4.5V Normalized On-Resistance 22 20 RDS(ON) (m) 18 16 14 12 10 0 5 10 15 20 0.8 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 60 50 ID=11A RDS(ON) (m) IS (A) 40 30 125C 20 10 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 1.0E-03 25C 1.0E-04 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics 1.0E-01 1.0E-02 FET+SCHOTTKY VGS=10V 1.6 VGS=10V ID=11A 1.4 4V 10V 4.5V 3.5V 12 ID(A) 125C 8 VGS=3V 4 0 1.5 2 2.5 3 3.5 4 VGS(Volts) Figure 2: Transfer Characteristics 25C 20 16 VDS=5V

1.2

VGS=4.5V

1.0E+01 125C 1.0E+00 25

Alpha & Omega Semiconductor, Ltd.

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AO4702

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

10 8 VGS (Volts) 6 4 2 0 0 4 8 12 16 20 Qg (nC) Figure 7: Gate-Charge Characteristics 1500 VDS=15V ID=11A Capacitance (pF) 1250 Ciss 1000 750 500 250 0 0 Crss 5 10 15 20 25 30 Coss FET+SCHOTTKY

VDS (Volts) Figure 8: Capacitance Characteristics

100.0 RDS(ON) limited ID (Amps) 10.0 100s 1ms 10ms 0.1s 1.0 TJ(Max)=150C TA=25C 0.1 0.1 1 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100 1s 10s DC

50 10s Power (W) 40 30 20 10 0 0.001

TJ(Max)=150C TA=25C

0.01

0.1

10

100

1000

Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)

10 ZJA Normalized Transient Thermal Resistance

D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=40C/W

In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

PD 0.1 Single Pulse Ton T

0.01 0.00001

0.0001

Pulse 0.1 Width (s) 0.001 0.01 1 10 Figure 11: Normalized Maximum Transient Thermal Impedance

100

1000

Alpha & Omega Semiconductor, Ltd.

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