AO4812 Dual N-Channel Enhancement Mode Field Effect Transistor

General Description
The AO4812 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in buck converters. AO4812 is Pb-free (meets ROHS & Sony 259 specifications).

Features
VDS (V) = 30V ID = 6.9A (VGS = 10V) RDS(ON) < 28m (VGS = 10V) RDS(ON) < 42m (VGS = 4.5V) UIS TESTED! Rg,Ciss,Coss,Crss Tested

D1 S2 G2 S1 G1 D2 D2 D1 D1

D2

1 2 3 4

8 7 6 5

G1 S1

G2 S2

SOIC-8

Absolute Maximum Ratings T A=25C unless otherwise noted Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current AF Pulsed Drain Current Power Dissipation B Avalanche Current
B

Maximum 30 20 6.9 5.8 30 2 1.44 15 34 -55 to 150

Units V V A

TA=25C TA=70C TA=25C TA=70C

B

ID IDM PD IAR EAR TJ, TSTG

W A mJ C

Repetitive avalanche energy 0.3mH

Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-AmbientA Maximum Junction-to-AmbientA Maximum Junction-to-LeadC

Symbol t 10s Steady-State Steady-State RJA RJL

Typ 48 74 35

Max 62.5 110 40

Units C/W C/W C/W

Alpha & Omega Semiconductor, Ltd.

www.aosmd.com

AO4812

Electrical Characteristics (T J=25C unless otherwise noted) Symbol Parameter Conditions ID=250 A, VGS=0V VDS=30V, VGS=0V TJ=55C VDS=0V, VGS=20V VDS=VGS ID=250 A VGS=4.5V, V DS=5V VGS=10V, I D=6.9A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=4.5V, I D=5.0A Forward Transconductance VDS=5V, ID=6.9A 10 Diode Forward Voltage IS=1A Maximum Body-Diode Continuous Current TJ=125C 1 20 22.5 31.3 34.5 15.4 0.76 1 3 680 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 1.5 102 77 3 13.84 VGS=10V, VDS=15V, I D=6.9A 6.74 1.82 3.2 4.6 VGS=10V, VDS=15V, RL=2.2, RGEN=3 IF=6.9A, dI/dt=100A/ s IF=6.9A, dI/dt=100A/ s 4.1 20.6 5.2 16.5 7.8 7 6.2 30 7.5 20 10 108 3.6 17 8.1 820 28 38 42 1.9 Min 30 1 5 100 3 Typ Max Units V A nA V A m m S V A pF pF pF nC nC nC nC ns ns ns ns ns nC

STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current

DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance

SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge

A: The value of R JA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead RJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using <300s pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The SOA curve provides a single pulse rating. F. The current rating is based on the t 10s junction to ambient thermal resistance rating. Rev5: Dec 2006

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Alpha & Omega Semiconductor, Ltd.

www.aosmd.com

AO4812

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

30 10V 25 20 ID (A) 15 3.5V 10 5 0 0 1 2 3 4 5 VDS (Volts) Fig 1: On-Region Characteristics VGS=3V ID(A) 6V 5V 4.5V

20 16 12 8 4 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 VGS (Volts) Figure 2: Transfer Characteristics 125C 25C VDS=5V

4V

60 50 RDS(ON) (m ) 40 30 20 10 0 5 10 15 20 ID (Amps) Figure 3: On-Resistance vs. Drain Current and Gate Voltage VGS=4.5V Normalized On-Resistance

1.6 1.5 1.4 1.3 1.2 1.1 1 0.9 0.8 0 50 100 150 200 Temperature ( C) Figure 4: On-Resistance vs. Junction Temperature VGS=4.5V

ID=5A

VGS=10V

VGS=10V

70 60 RDS(ON) (m ) 50 40 30 125C

1.0E+01

ID=5A
IS Amps

1.0E+00 1.0E-01 1.0E-02 1.0E-03 1.0E-04 25C 125C

20 10 2 4 6

25C

1.0E-05 0.0 8 10 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body diode characteristics

VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage

Alpha & Omega Semiconductor, Ltd.

www.aosmd.com

AO4812

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

10 8 VGS (Volts) 6 4 2 0 0 2 4 6 8 10 12 14 Qg (nC) Figure 7: Gate-Charge characteristics 1000 VDS=15V ID=6.9A Capacitance (pF) 900 800 700 600 500 400 300 200 100 0 0 Crss 5 10 15 20 25 30 Coss Ciss f=1MHz VGS=0V

VDS (Volts) Figure 8: Capacitance Characteristics

100 RDS(ON) limited 10 ID (Amps) 1ms 10ms 0.1s 1 1s 10s DC 0.1 0.1 1 VDS (Volts) 10

TJ(Max)=150C TA=25C 100s 10s Power W

40 TJ(Max)=150C TA=25C

30

20

10

100

0 0.001

0.01

0.1

10

100

1000

Figure 9: Maximum Forward Biased Safe Operating Area (Note E)

Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)

10 Z JA Normalized Transient Thermal Resistance

D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=62.5C/W

In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

0.1

PD Ton

Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1

T 100 1000

10

Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance

Alpha & Omega Semiconductor, Ltd.

www.aosmd.com