ndust ri al & Mul t i market

Dat a Sheet
Rev. 2.1, 2010-02-09
Final
Cool MOS C6
600V CoolMOS" C6 Power Transistor
PW60R070C6
MOSFET
Metal Oxide Semiconductor Field Effect Transistor
drain
pin 2
gate
pin 1
source
pin 3
600V CooIMOS C6 Power Transistor IPW60R070C6
Final Data Sheet 2 Rev. 2.1, 2010-02-09
1 Description
CoolMOS" is a revolutionary technology for high voltage power MOSFETs,
designed according to the superjunction (SJ) principle and pioneered by nfineon
Technologies. CoolMOS" C6 series combines the experience of the leading SJ
MOSFET supplier with high class innovation. The offered devices provide all
benefits of a fast switching SJ MOSFET while not sacrificing ease of use.
Extremely low switching and conduction losses make switching applications
even more efficient, more compact, lighter, and cooler.
Features
Extremely low losses due to very low FOM Rdson*Qg and Eoss
Very high commutation ruggedness
Easy to use/drive
JEDEC
1)
qualified, Pb-free plating, Halogen free
AppIications
PFC stages, hard switching PWM stages and resonant switching PWM stages for
e.g. PC Silverbox, Adapter, LCD & PDP TV, Lighting, Server, Telecom and UPS.
Please note: For MOSFET paralleling the use of ferrite beads on the gate or separate totem poles is generally
recommended.
1) J-STD20 and JESD22
TabIe 1 Key Performance Parameters
Parameter VaIue Unit ReIated Links
(
DS
@ '
j,max
650 V FX C6 Product Brief
R
DS(on),max
0.07 # FX C6 Portfolio
%
g,typ
170 nC FX CoolMOS Webpage
#
D,pulse
159 A FX Design tools
"
oss
@ 400V 13 J
Body diode d+/d, 300 A/s
Type Package Marking
PW60R070C6 PG-TO247 6R070C6
600V CooIMOS C6 Power Transistor
IPW60R070C6
TabIe of Contents
Final Data Sheet 3 Rev. 2.1, 2010-02-09
1 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
TabIe of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
3 ThermaI characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
4 EIectricaI characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
5 EIectricaI characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
6 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
7 Package outIines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
8 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
TabIe of Contents
600V CooIMOS C6 Power Transistor
IPW60R070C6
Maximum ratings
Final Data Sheet 4 Rev. 2.1, 2010-02-09
2 Maximum ratings
at '
j
= 25 C, unless otherwise specified.
3 ThermaI characteristics
TabIe 2 Maximum ratings
Parameter SymboI VaIues Unit Note / Test Condition
Min. Typ. Max.
Continuous drain current
1)
1) Limited by '
j,max.
Maximum duty cycle D=0.75
I
D
- - 53 A T
C
= 25 C
34 T
C
= 100C
Pulsed drain current
2)
2) Pulse width ,
p
limited by '
j,max
I
D,pulse
- - 159 A T
C
=25 C
Avalanche energy, single pulse E
AS
- - 1135 mJ I
D
=9.3 A,V
DD
=50 V
(see table 17)
Avalanche energy, repetitive E
AR
- - 1.72 I
D
=9.3 A,V
DD
=50 V
Avalanche current, repetitive I
AR
- - 9.3 A
MOSFET dv/dt ruggedness dv/dt - - 50 V/ns V
DS
=0...480 V
Gate source voltage V
GS
-20 - 20 V static
-30 30 AC (f>1 Hz)
Power dissipation P
tot
- - 391 W T
C
=25 C
Operating and storage temperature T
j
,T
stg
-55 - 150 C
Mounting torque - - 60 Ncm M3 and M3.5 screws
Continuous diode forward current I
S
- - 46 A T
C
=25 C
Diode pulse current
2)
I
S,pulse
- - 159 A T
C
=25 C
Reverse diode dv/dt
3)
3) dentical low side and high side switch with identical &
G
dv/dt - - 15 V/ns V
DS
=0...400 V, I
SD
$ I
D
,
T
j
=25 C
Maximum diode commutation
speed
3)
di
f
/dt - - 300 A/s (see table 18)
TabIe 3 ThermaI characteristics TO-247 (IPW60R070C6)
Parameter SymboI VaIues Unit Note /
Test Condition
Min. Typ. Max.
Thermal resistance, junction - case &
thJC
- - 0.32 C/W
Thermal resistance, junction -
ambient
&
thJA
- - 62 leaded
Soldering temperature,
wavesoldering only allowed at
leads
'
sold
- - 260 C 1.6 mm (0.063 in.)
from case for 10 s
600V CooIMOS C6 Power Transistor
IPW60R070C6
EIectricaI characteristics
Final Data Sheet 5 Rev. 2.1, 2010-02-09
4 EIectricaI characteristics
Electrical characteristics, at 'j=25 C, unless otherwise specified.
TabIe 4 Static characteristics
Parameter SymboI VaIues Unit Note / Test Condition
Min. Typ. Max.
Drain-source breakdown voltage (
(BR)DSS
600 - - V (
GS
=0 V, #
D
=0.25 mA
Gate threshold voltage (
GS(th)
2.5 3 3.5 (
DS
=(
GS
, #
D
=1.72 mA
Zero gate voltage drain current #
DSS
- - 5 A (
DS
=600 V, (
GS
=0 V,
'
j
=25 C
- 50 - (
DS
=600 V, (
GS
=0 V,
'
j
=150 C
Gate-source leakage current #
GSS
- - 100 nA (
GS
=20 V, (
DS
=0 V
Drain-source on-state resistance &
DS(on)
- 0.063 0.07 # (
GS
=10 V, #
D
=25.8 A,
'
j
=25 C
- 0.164 - (
GS
=10 V, #
D
=25.8 A,
'
j
=150 C
Gate resistance &
G
- 0.85 - # *=1 MHz, open drain
TabIe 5 Dynamic characteristics
Parameter SymboI VaIues Unit Note /
Test Condition
Min. Typ. Max.
nput capacitance !
iss
- 3800 - pF (
GS
=0 V, (
DS
=100 V,
*=1 MHz
Output capacitance !
oss
- 215 -
Effective output capacitance,
energy related
1)
1) !
o(er)
is a fixed capacitance that gives the same stored energy as !
oss
while V
DS
is rising from 0 to 80% V
(BR)DSS
!
o(er)
- 140 - (
GS
=0 V,
(
DS
=0...480 V
Effective output capacitance, time
related
2)
2) !
o(tr)
is a fixed capacitance that gives the same charging time as !
oss
while V
DS
is rising from 0 to 80% V
(BR)DSS
!
o(tr)
- 710 - #
D
=constant,
GS
=0 V
(
DS
=0...480V
Turn-on delay time ,
d(on)
- 16 - ns (
DD
=400 V,
(
GS
=13 V, #
D
=25.8A,
&
G
= 1."#
(see table 16
Rise time ,
r
- 12 -
Turn-off delay time ,
d(off)
- 83 -
Fall time ,
f
- 5 -
600V CooIMOS C6 Power Transistor
IPW60R070C6
EIectricaI characteristics
Final Data Sheet 6 Rev. 2.1, 2010-02-09
TabIe 6 Gate charge characteristics
Parameter SymboI VaIues Unit Note /
Test Condition
Min. Typ. Max.
Gate to source charge %
gs
- 21 - nC (
DD
=480 V,
#
D
=25.8 A,
(
GS
=0 to 10 V
Gate to drain charge %
gd
- 87 -
Gate charge total %
g
- 170 -
Gate plateau voltage (
plateau
- 5.4 - V
TabIe 7 Reverse diode characteristics
Parameter SymboI VaIues Unit Note /
Test Condition
Min. Typ. Max.
Diode forward voltage (
SD
- 0.9 - V (
GS
=0 V, #
F
=25.8 A,
'
j
=25 C
Reverse recovery time ,
rr
- 720 - ns (
R
=400 V, #
F
=25.8 A,
d+
F
/d,=100 A/s
(see table 18)
Reverse recovery charge %
rr
- 19 - C
Peak reverse recovery current #
rrm
- 52 - A
600V CooIMOS C6 Power Transistor
IPW60R070C6
EIectricaI characteristics diagrams
Final Data Sheet 7 Rev. 2.1, 2010-02-09
5 EIectricaI characteristics diagrams
TabIe 8
Power dissipation Max. transient thermaI impedance

tot
= f('
C
)
(thJC)
=f(tp); parameter: D=t
p
/T
TabIe 9
Safe operating area "
C
=25 C Safe operating area "
C
=80 C
I
D
=f(V
DS
); T
C
=25 C; D=0; parameter t
p
I
D
=f(V
DS
); T
C
=80C; D=0; parameter t
p
600V CooIMOS C6 Power Transistor
IPW60R070C6
EIectricaI characteristics diagrams
Final Data Sheet 8 Rev. 2.1, 2010-02-09
TabIe 10
Typ. output characteristics !
j
=25 C Typ. output characteristics !
j
=125 C
I
D
=f(V
DS
); T
j
=25 C; parameter: V
GS
I
D
=f(V
DS
); T
j
=125 C; parameter: V
GS
TabIe 11
Typ. drain-source on-state resistance Drain-source on-state resistance
R
DS(on)
=f(I
D
); T
j
=125 C; parameter: V
GS
R
DS(on)
=f(T
j
); I
D
=25.8 A; V
GS
=10 V
600V CooIMOS C6 Power Transistor
IPW60R070C6
EIectricaI characteristics diagrams
Final Data Sheet 9 Rev. 2.1, 2010-02-09
TabIe 12
Typ. transfer characteristics Typ. gate charge
I
D
=f(V
GS
); V
DS
=20V
V
GS
=f(Q
gate
), I
D
=25.8 A pulsed
TabIe 13
AvaIanche energy Drain-source breakdown voItage
E
AS
=f(T
j
); I
D
=9.3 A; V
DD
=50 V V
BR(DSS)
=f(T
j
); I
D
=0.25 mA
600V CooIMOS C6 Power Transistor
IPW60R070C6
EIectricaI characteristics diagrams
Final Data Sheet 10 Rev. 2.1, 2010-02-09
TabIe 14
Typ. capacitances Typ. !
oss
stored energy
C=f(V
DS
); V
GS
=0 V; f=1 MHz E
OSS
=f(V
DS
)
TabIe 15
Forward characteristics of reverse diode
I
F
=f(V
SD
); parameter: T
j
600V CooIMOS C6 Power Transistor
IPW60R070C6
Test circuits
Final Data Sheet 11 Rev. 2.1, 2010-02-09
6 Test circuits
TabIe 16 Switching times test circuit and waveform for inductive Ioad
Switching times test circuit for inductive Ioad Switching time waveform
TabIe 17 UncIamped inductive Ioad test circuit and waveform
UncIamped inductive Ioad test circuit UncIamped inductive waveform
TabIe 18 Test circuit and waveform for diode recovery times
Test circuit for diode recovery times Diode recovery waveform
V
DS
V
GS
V
DS
V
GS
t
d(on)
td(off)
t
r
t
on
tf
t
off
10%
90%
V
DS
I
D
V
DS
V
D
V
(BR)DS
ID
V
DS
V
DS
I
D
R
G1
R
G2
R
G1
= R
G2
F
d$ % /d
%
rr
10%
90%
RRM
RRM
%
RRM
SL00088
"
F
$
F
"
S
RRM
#
S
% %
F
/d $ d
rr
%
rr
% %
S
%
F
= +
=
rr
" "
S F
+ "
600V CooIMOS C6 Power Transistor
IPW60R070C6
Package outIines
Final Data Sheet 12 Rev. 2.1, 2010-02-09
7 Package outIines
Figure 1 OutIines TO-247, dimensions in mm/inches
600V CooIMOS C6 Power Transistor
IPW60R070C6
Revision History
Final Data Sheet 13 Rev. 2.1, 2010-02-09
8 Revision History
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Your feedback will help us to continuously improve the quality of this document.
Please send your proposal (including a reference to this document) to: erratum@infineon.com
Edition 2010-02-09
Published by
nfineon Technologies AG
81726 Munich, Germany
2010 nfineon Technologies AG
All Rights Reserved.
LegaI DiscIaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any
information regarding the application of the device, nfineon Technologies hereby disclaims any and all warranties
and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
nfineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact the nearest nfineon Technologies Office.
nfineon Technologies component described in this Data Sheet may be used in life-support devices or systems
and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon
Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support,
automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system.
Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and
sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons
may be endangered.
CooIMOS C6 600V CooIMOS C6 Power Transistor
Revision History: 2010-02-09, Rev. 2.1
Previous Revision:
Revision Subjects (major changes since Iast revision)
2.0 Release of final data sheet
2.1 New package outlines TO-247