ATF-54143

Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package

Data Sheet

Description
Avago Technologies ATF-54143 is a high dynamic range, low noise, E-PHEMT housed in a 4-lead SC-70 (SOT-343) surface mount plastic package. The combination of high gain, high linearity and low noise makes the ATF-54143 ideal for cellular/PCS base stations, MMDS, and other systems in the 450 MHz to 6 GHz frequency range.

Features
High linearity performance Enhancement Mode Technology [1] Low noise figure Excellent uniformity in product specifications 800 micron gate width Low cost surface mount small plastic package SOT343 (4 lead SC-70) Tape-and-Reel packaging option available Lead-free option available.

Surface Mount Package SOT-343

Specifications
2 GHz; 3V, 60 mA (Typ.) 36.2 dBm output 3rd order intercept 20.4 dBm output power at 1 dB gain compression 0.5 dB noise figure 16.6 dB associated gain

Pin Connections and Package Marking

4Fx

DRAIN

SOURCE

Applications
GATE

SOURCE

Note: Top View. Package marking provides orientation and identification 4F = Device Code x = Date code character identifies month of manufacture.

Low noise amplifier for cellular/PCS base stations LNA for WLAN, WLL/RLL and MMDS applications General purpose discrete E-PHEMT for other ultra low noise applications
Note: 1. Enhancement mode technology requires positive Vgs, thereby eliminating the need for the negative gate voltage associated with conventional depletion mode devices.

Attention: Observe precautions for handling electrostatic sensitive devices.

ESD Machine Model (Class A) ESD Human Body Model (Class 1A) Refer to Avago Application Note A004R: Electrostatic Discharge Damage and Control.

ATF-54143 Absolute Maximum Ratings [1]

Symbol
VDS VGS VGD IDS Pdiss Pin max. (ON mode) Pin max. (OFF mode) IGS TCH TSTG jc

Parameter
Drain - Source Voltage [2] Gate - Source Voltage [2] Gate Drain Voltage [2] Drain Current[2] Total Power Dissipation[3] RF Input Power (Vds=3V, Ids=60mA) RF Input Power (Vd=0, Ids=0A) Gate Source Current Channel Temperature Storage Temperature Thermal Resistance [4]
120

Units
V V V mA mW dBm dBm mA C C C/W
0.7V

Absolute Maximum
5 -5 to 1 -5 to 1 120 725 20 [5] 20 2 [5] 150 -65 to 150 162

Notes: 1. Operation of this device in excess of any one of these parameters may cause permanent damage. 2. Assumes DC quiescent conditions. 3. Source lead temperature is 25C. Derate 6.2 mW/C for TL > 33C. 4. Thermal resistance measured using 150C Liquid Crystal Measurement method. 5. The device can handle +20 dBm RF Input Power provided IGS is limited to 2 mA. IGS at P1dB drive level is bias circuit dependent. See application section for additional information.

100
0.6V

80

IDS (mA)

60
0.5V

40 20 0 0 1 2 3 4 VDS (V) 5 6 7

0.4V 0.3V

Figure 1. Typical I-V Curves. (VGS = 0.1 V per step)

Product Consistency Distribution Charts [6, 7]

160 Cpk = 0.77 Stdev = 1.41
200 Cpk = 1.35 Stdev = 0.4 160
120 160 Cpk = 1.67 Stdev = 0.073

120

120

80

-3 Std
80

-3 Std

+3 Std
80

+3 Std

40

40

40

0 30 32 34 36 OIP3 (dBm) 38 40 42

0 14 15 16 17 GAIN (dB) 18 19

0 0.25

0.45

0.65 NF (dB)

0.85

1.05

Figure 2. OIP3 @ 2 GHz, 3 V, 60 mA. LSL = 33.0, Nominal = 36.575

Figure 3. Gain @ 2 GHz, 3 V, 60 mA. USL = 18.5, LSL = 15, Nominal = 16.6

Figure 4. NF @ 2 GHz, 3 V, 60 mA. USL = 0.9, Nominal = 0.49

Notes: 6. Distribution data sample size is 450 samples taken from 9 different wafers. Future wafers allocated to this product may have nominal values anywhere between the upper and lower limits. 7. Measurements made on production test board. This circuit represents a trade-off between an optimal noise match and a realizeable match based on production test equipment. Circuit losses have been de-embedded from actual measurements.

ATF-54143 Electrical Specifications

TA = 25C, RF parameters measured in a test circuit for a typical device Symbol
Vgs Vth Idss Gm Igss NF Ga OIP3 P1dB

Parameter and Test Condition

Operational Gate Voltage Threshold Voltage Saturated Drain Current Transconductance Gate Leakage Current Noise Figure[1] Associated Gain[1] Output 3rd Order Intercept Point[1] 1dB Compressed Output Power[1] f = 2 GHz f = 900 MHz f = 2 GHz f = 900 MHz f = 2 GHz f = 900 MHz f = 2 GHz f = 900 MHz Vds = 3V, Ids = 60 mA Vds = 3V, Ids = 4 mA Vds = 3V, Vgs = 0V

Units
V V A

Min.
0.4 0.18 230 15 33

Typ.[2]
0.59 0.38 1 410 0.5 0.3 16.6 23.4 36.2 35.5 20.4 18.4

Max.
0.75 0.52 5 560 200 0.9 18.5

Vds = 3V, gm = Idss/Vgs; mmho Vgs = 0.75 - 0.7 = 0.05V Vgd = Vgs = -3V Vds = 3V, Ids = 60 mA Vds = 3V, Ids = 60 mA Vds = 3V, Ids = 60 mA Vds = 3V, Ids = 60 mA Vds = 3V, Ids = 60 mA Vds = 3V, Ids = 60 mA Vds = 3V, Ids = 60 mA Vds = 3V, Ids = 60 mA A dB dB dB dB dBm dBm dBm dBm

Notes: 1. Measurements obtained using production test board described in Figure 5. 2. Typical values measured from a sample size of 450 parts from 9 wafers.

Input

50 Ohm Transmission Line Including Gate Bias T (0.3 dB loss)

Input Matching Circuit _mag = 0.30 _ang = 150 (0.3 dB loss)

DUT

Output Matching Circuit _mag = 0.035 _ang = -71 (0.4 dB loss)

50 Ohm Transmission Line Including Drain Bias T (0.3 dB loss)

Output

Figure 5. Block diagram of 2 GHz production test board used for Noise Figure, Associated Gain, P1dB, and OIP3 measurements. This circuit represents a trade-off between an optimal noise match and associated impedance matching circuit losses. Circuit losses have been de-embedded from actual measurements.

ATF-54143 Typical Performance Curves

0.7 0.6 0.5 0.4 Fmin (dB) 0.5 Fmin (dB) 0.3 0.2 0.3
3V 4V

19 18 17 GAIN (dB)
3V 4V

0.6

16 15 14 13 12
3V 4V

0.4

0.1 0 0 20 40 60 80

0.2 0 20 40 60 80 100 Ids (mA)

100

20

40

60

80

100

Ids (mA)

Ids (mA)

Figure 6. Fmin vs. Ids and Vds Tuned for Max OIP3 and Fmin at 2 GHz.
25 24 23

Figure 7. Fmin vs. Ids and Vds Tuned for Max OIP3 and Min NF at 900 MHz.
42 37 32

Figure 8. Gain vs. Ids and Vds Tuned for Max OIP3 and Fmin at 2 GHz.
40

35 OIP3 (dBm)

OIP3 (dBm)

GAIN (dB)

22 21 20 19 18 0 20 40 60 80 100 Ids (mA)

3V 4V

30

27 22 17 12 0 20 40 60 80 100 Ids (mA)

3V 4V

25
3V 4V

20

15 0 20 40 60 80 100 Ids (mA)

Figure 9. Gain vs. Ids and Vds Tuned for Max OIP3 and Fmin at 900 MHz.
24 22 20 18 16 14 12 0 20 40 60 80 100 Idq (mA)[1]
3V 4V

Figure 10. OIP3 vs. Ids and Vds Tuned for Max OIP3 and Fmin at 2 GHz.
23 22 21

Figure 11. OIP3 vs. Ids and Vds Tuned for Max OIP3 and Fmin at 900 MHz.
35 30 25 GAIN (dB) 20 15
25 C -40 C 85 C

P1dB (dBm)

P1dB (dBm)

20 19 18 17 16 15 0 20 40 60 80 100 Idq (mA)[1]

3V 4V

10 5 0 1 2 3 4 5 6 FREQUENCY (GHz)

Figure 12. P1dB vs. Idq and Vds Tuned for Max OIP3 and Fmin at 2 GHz.

Figure 13. P1dB vs. Idq and Vds Tuned for Max OIP3 and Fmin at 900 MHz.

Figure 14. Gain vs. Frequency and Temp Tuned for Max OIP3 and Fmin at 3V, 60 mA.

Notes: 1. Idq represents the quiescent drain current without RF drive applied. Under low values of Ids, the application of RF drive will cause Id to increase substantially as P1dB is approached. 2. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements a true Fmin is calculated. Refer to the noise parameter application section for more information.

ATF-54143 Typical Performance Curves, continued

2
25 C -40 C 85 C

45 40 35 P1dB (dBm)
25 C -40 C 85 C

21 20.5 20 19.5 19 18.5 18 17.5 17 0 1 2 3 4 5 6 0 1 2 3 4 5 6 FREQUENCY (GHz) FREQUENCY (GHz)

25 C -40 C 85 C

1.5 OIP3 (dBm) 0 1 2 3 4 5 6 FREQUENCY (GHz) Fmin (dB)

30 25 20 15

1.0

0.5

10

Figure 15. Fmin[2] vs. Frequency and Temp Tuned for Max OIP3 and Fmin at 3V, 60 mA.
1.4 1.2 1.0 Fmin (dB) 0.8 0.6 0.4 0.2 0 0 1 2 3 4 5 6 7 FREQUENCY (GHz)
60 mA 40 mA 80 mA

Figure 16. OIP3 vs. Frequency and Temp Tuned for Max OIP3 and Fmin at 3V, 60 mA.

Figure 17. P1dB vs. Frequency and Temp Tuned for Max OIP3 and Fmin at 3V, 60 mA.

Figure 18. Fmin[1] vs. Frequency and Ids at 3V.

ATF-54143 Reflection Coefficient Parameters tuned for Maximum Output IP3, VDS = 3V, IDS = 60 mA
Freq (GHz)
0.9 2.0 3.9 5.8

Out_Mag.[1] (Mag)
0.017 0.026 0.013 0.025

Out_Ang.[2] (Degrees)
115 -85 173 102

OIP3 (dBm)
35.54 36.23 37.54 35.75

P1dB (dBm)
18.4 20.38 20.28 18.09

Note: 1. Gamma out is the reflection coefficient of the matching circuit presented to the output of the device. 2. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements a true Fmin is calculated. Refer to the noise parameter application section for more information.

ATF-54143 Typical Scattering Parameters, VDS = 3V, IDS = 40 mA

Freq. GHz
0.1 0.5 0.9 1.0 1.5 1.9 2.0 2.5 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0

S11 Mag.
0.99 0.83 0.72 0.70 0.65 0.63 0.62 0.61 0.61 0.63 0.66 0.69 0.71 0.72 0.76 0.83 0.85 0.88 0.89 0.87 0.88 0.87 0.87 0.92

Ang.
-17.6 -76.9 -114 -120.6 -146.5 -162.1 -165.6 178.5 164.2 138.4 116.5 97.9 80.8 62.6 45.2 28.2 13.9 -0.5 -15.1 -31.6 -46.1 -54.8 -62.8 -73.6

dB
27.99 25.47 22.52 21.86 19.09 17.38 17.00 15.33 13.91 11.59 9.65 8.01 6.64 5.38 4.20 2.84 1.42 0.23 -0.86 -2.18 -3.85 -5.61 -7.09 -8.34

S21 Mag.
25.09 18.77 13.37 12.39 9.01 7.40 7.08 5.84 4.96 3.80 3.04 2.51 2.15 1.86 1.62 1.39 1.18 1.03 0.91 0.78 0.64 0.52 0.44 0.38

S12 Ang.
168.5 130.1 108 103.9 87.4 76.6 74.2 62.6 51.5 31 11.6 -6.7 -24.5 -42.5 -60.8 -79.8 -96.9 -112.4 -129.7 -148 -164.8 -178.4 170.1 156.1

S22 Ang.
80.2 52.4 40.4 38.7 33.3 30.4 29.8 26.6 22.9 14 4.2 -6.1 -17.6 -29.3 -40.6 -56.1 -69.3 -81.6 -95.7 -110.3 -124 -134.6 -144.1 -157.4

Mag.
0.009 0.036 0.047 0.049 0.057 0.063 0.065 0.072 0.080 0.094 0.106 0.118 0.128 0.134 0.145 0.150 0.149 0.150 0.149 0.143 0.132 0.121 0.116 0.109

Mag.
0.59 0.44 0.33 0.31 0.24 0.20 0.19 0.15 0.12 0.10 0.14 0.17 0.20 0.22 0.27 0.37 0.45 0.51 0.54 0.61 0.65 0.70 0.73 0.76

Ang.
-12.8 -54.6 -78.7 -83.2 -99.5 -108.6 -110.9 -122.6 -137.5 176.5 138.4 117.6 98.6 73.4 52.8 38.3 25.8 12.7 -4.1 -20.1 -34.9 -45.6 -55.9 -68.7

MSG/MAG dB
34.45 27.17 24.54 24.03 21.99 20.70 20.37 19.09 17.92 15.33 12.99 11.50 10.24 8.83 8.17 8.57 7.47 7.50 6.60 4.57 3.47 2.04 1.05 1.90

Typical Noise Parameters, VDS = 3V, IDS = 40 mA

Freq GHz
0.5 0.9 1.0 1.9 2.0 2.4 3.0 3.9 5.0 5.8 6.0 7.0 8.0 9.0 10.0

Fmin dB
0.17 0.22 0.24 0.42 0.45 0.51 0.59 0.69 0.90 1.14 1.17 1.24 1.57 1.64 1.8

opt Mag.
0.34 0.32 0.32 0.29 0.29 0.30 0.32 0.34 0.45 0.50 0.52 0.58 0.60 0.69 0.80

opt Ang.
34.80 53.00 60.50 108.10 111.10 136.00 169.90 -151.60 -119.50 -101.60 -99.60 -79.50 -57.90 -39.70 -22.20

Rn/50
0.04 0.04 0.04 0.04 0.04 0.04 0.05 0.05 0.09 0.16 0.18 0.33 0.56 0.87 1.34

Ga dB
MSG/MAG and S21 (dB)

40 35 30 25 20 15 10 5 0 -5 10 -15 0 5 10 FREQUENCY (GHz) 15 20

S21 MAG MSG

27.83 23.57 22.93 18.35 17.91 16.39 15.40 13.26 11.89 10.95 10.64 9.61 8.36 7.77 7.68

Figure 19. MSG/MAG and |S21|2 vs. Frequency at 3V, 40 mA.

Notes: 1. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements a true Fmin is calculated. Refer to the noise parameter application section for more information. 2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the gate lead. The output reference plane is at the end of the drain lead. The parameters include the effect of four plated through via holes connecting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the carrier. Two 0.020 inch diameter via holes are placed within 0.010 inch from each source lead contact point, one via on each side of that point.

ATF-54143 Typical Scattering Parameters, VDS = 3V, IDS = 60 mA

Freq. GHz
0.1 0.5 0.9 1.0 1.5 1.9 2.0 2.5 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0

S11 Mag.
0.99 0.81 0.71 0.69 0.64 0.62 0.62 0.60 0.60 0.62 0.66 0.69 0.70 0.72 0.76 0.83 0.85 0.88 0.89 0.88 0.88 0.88 0.88 0.92

Ang.
-18.9 -80.8 -117.9 -124.4 -149.8 -164.9 -168.3 176.2 162.3 137.1 115.5 97.2 80.2 62.2 45.0 28.4 13.9 -0.2 -14.6 -30.6 -45.0 -54.5 -62.5 -73.4

dB
28.84 26.04 22.93 22.24 19.40 17.66 17.28 15.58 14.15 11.81 9.87 8.22 6.85 5.58 4.40 3.06 1.60 0.43 -0.65 -1.98 -3.62 -5.37 -6.83 -8.01

S21 Mag.
27.66 20.05 14.01 12.94 9.34 7.64 7.31 6.01 5.10 3.90 3.11 2.58 2.20 1.90 1.66 1.42 1.20 1.05 0.93 0.80 0.66 0.54 0.46 0.40

S12 Ang.
167.6 128.0 106.2 102.2 86.1 75.6 73.3 61.8 51.0 30.8 11.7 -6.4 -24.0 -41.8 -59.9 -78.7 -95.8 -111.1 -128.0 -146.1 -162.7 -176.6 171.9 157.9

S22 Ang.
80.0 52.4 41.8 40.4 36.1 33.8 33.3 30.1 26.5 17.1 6.8 -3.9 -15.8 -28.0 -39.6 -55.1 -68.6 -80.9 -94.9 -109.3 -122.9 -133.7 -143.2 -156.3

Mag.
0.01 0.03 0.04 0.05 0.05 0.06 0.06 0.07 0.08 0.09 0.11 0.12 0.13 0.14 0.15 0.15 0.15 0.15 0.15 0.14 0.13 0.12 0.12 0.11

Mag.
0.54 0.40 0.29 0.27 0.21 0.17 0.17 0.13 0.11 0.10 0.14 0.18 0.20 0.23 0.29 0.38 0.46 0.51 0.55 0.61 0.66 0.70 0.73 0.76

Ang.
-14.0 -58.8 -83.8 -88.5 -105.2 -114.7 -117.0 -129.7 -146.5 165.2 131.5 112.4 94.3 70.1 50.6 36.8 24.4 11.3 -5.2 -20.8 -35.0 -45.8 -56.1 -68.4

MSG/MAG dB
34.42 28.25 25.44 24.13 22.71 21.05 20.86 19.34 18. 04 1 4.87 13.27 11.72 10.22 9.02 8.38 8.71 7.55 7.55 6.70 5.01 3.73 2.54 1.57 2.22

Typical Noise Parameters, VDS = 3V, IDS = 60 mA

MSG/MAG and S21 (dB)

Freq GHz
0.5 0.9 1.0 1.9 2.0 2.4 3.0 3.9 5.0 5.8 6.0 7.0 8.0 9.0 10.0

Fmin dB
0.15 0.20 0.22 0.42 0.45 0.52 0.59 0.70 0.93 1.16 1.19 1.26 1.63 1.69 1.73

opt Mag.
0.34 0.32 0.32 0.27 0.27 0.26 0.29 0.36 0.47 0.52 0.55 0.60 0.62 0.70 0.79

opt Ang.
42.3 62.8 67.6 116.3 120.1 145.8 178.0 -145.4 -116.0 -98.9 -96.5 -77.1 -56.1 -38.5 -21.5

Rn/50
0.04 0.04 0.04 0.04 0.04 0.04 0.05 0.05 0.10 0.18 0.20 0.37 0.62 0.95 1.45

Ga dB
28.50 24.18 23.47 18.67 18.29 16.65 15.56 13.53 12.13 11.10 10.95 9.73 8.56 7.97 7.76

40 35 30 25 20 15 10 5 0 -5 10 -15 0 5 10 FREQUENCY (GHz) 15 20

S21 MAG MSG

Figure 20. MSG/MAG and |S21|2 vs. Frequency at 3V, 60 mA.

Notes: 1. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements a true Fmin is calculated. Refer to the noise parameter application section for more information. 2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the gate lead. The output reference plane is at the end of the drain lead. The parameters include the effect of four plated through via holes connecting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the carrier. Two 0.020 inch diameter via holes are placed within 0.010 inch from each source lead contact point, one via on each side of that point.

ATF-54143 Typical Scattering Parameters, VDS = 3V, IDS = 80 mA

Freq. GHz
0.1 0.5 0.9 1.0 1.5 1.9 2.0 2.5 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0

S11 Mag.
0.98 0.80 0.72 0.70 0.66 0.65 0.64 0.64 0.63 0.66 0.69 0.72 0.73 0.74 0.78 0.84 0.86 0.88 0.89 0.87 0.87 0.86 0.86 0.91

Ang.
-20.4 -85.9 -123.4 -129.9 -154.6 -169.5 -172.8 172.1 158.5 133.8 112.5 94.3 77.4 59.4 42.1 25.6 11.4 -2.6 -17.0 -33.3 -47.3 -55.6 -63.4 -74.2

dB
28.32 25.32 22.10 21.40 18.55 16.81 16.42 14.69 13.24 10.81 8.74 7.03 5.63 4.26 2.98 1.51 0.00 -1.15 -2.18 -3.48 -5.02 -6.65 -7.92 -8.92

S21 Mag.
26.05 18.45 12.73 11.75 8.46 6.92 6.62 5.42 4.59 3.47 2.74 2.25 1.91 1.63 1.41 1.19 1.00 0.88 0.78 0.67 0.56 0.47 0.40 0.36

S12 Ang.
167.1 126.8 105.2 101.3 85.4 74.9 72.6 61.1 50.1 29.9 11.1 -6.5 -23.5 -41.1 -58.7 -76.4 -92.0 -105.9 -121.7 -138.7 -153.9 -165.9 -175.9 171.2

S22 Ang.
79.4 53.3 43.9 42.7 38.6 35.7 35.0 30.6 25.5 13.4 1.2 -11.3 -24.5 -38.1 -51.1 -66.8 -79.8 -91.7 -105.6 -119.5 -132.3 -141.7 -150.4 -163.0

Mag.
0.01 0.04 0.05 0.05 0.06 0.07 0.07 0.09 0.10 0.12 0.13 0.14 0.15 0.16 0.17 0.16 0.16 0.16 0.15 0.14 0.13 0.12 0.11 0.10

Mag.
0.26 0.29 0.30 0.30 0.30 0.29 0.29 0.29 0.29 0.33 0.39 0.42 0.44 0.47 0.52 0.59 0.64 0.68 0.70 0.73 0.76 0.78 0.79 0.81

Ang.
-27.6 -104.9 -138.8 -144.3 -165.0 -177.6 179.4 164.4 150.2 126.1 107.8 91.8 75.5 55.5 37.8 24.0 11.8 -0.8 -16.7 -31.7 -44.9 -54.9 -64.2 -76.2

MSG/MAG dB
34.16 26.64 24.06 23.71 21.49 19.95 19.76 17.80 16.62 14.61 12.03 10.52 9.12 7.78 7.12 6.96 6.11 5.67 5.08 3.67 2.65 1.48 0.49 1.29

Typical Noise Parameters, VDS = 3V, IDS = 80 mA

MSG/MAG and S21 (dB)

Freq GHz
0.5 0.9 1.0 1.9 2.0 2.4 3.0 3.9 5.0 5.8 6.0 7.0 8.0 9.0 10.0

Fmin dB
0.19 0.24 0.25 0.43 0.42 0.51 0.61 0.70 0.94 1.20 1.26 1.34 1.74 1.82 1.94

opt Mag.
0.23 0.24 0.25 0.28 0.29 0.30 0.35 0.41 0.52 0.56 0.58 0.62 0.63 0.71 0.79

opt Ang.
66.9 84.3 87.3 134.8 138.8 159.5 -173 -141.6 -113.5 -97.1 -94.8 -75.8 -55.5 -37.7 -20.8

Rn/50
0.04 0.04 0.04 0.04 0.04 0.03 0.03 0.06 0.13 0.23 0.26 0.46 0.76 1.17 1.74

Ga dB
27.93 24.13 23.30 18.55 18.15 16.44 15.13 12.97 11.42 10.48 10.11 8.86 7.59 6.97 6.65

40 35 30 25 20 15 10 5 0 -5 10 -15 0 5 10 FREQUENCY (GHz) 15 20

S21 MAG MSG

Figure 21. MSG/MAG and |S21|2 vs. Frequency at 3V, 80 mA.

Notes: 1. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements a true Fmin is calculated. Refer to the noise parameter application section for more information. 2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the gate lead. The output reference plane is at the end of the drain lead. The parameters include the effect of four plated through via holes connecting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the carrier. Two 0.020 inch diameter via holes are placed within 0.010 inch from each source lead contact point, one via on each side of that point.

ATF-54143 Typical Scattering Parameters, VDS = 4V, IDS = 60 mA

Freq. GHz
0.1 0.5 0.9 1.0 1.5 1.9 2.0 2.5 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0

S11 Mag.
0.99 0.81 0.71 0.69 0.64 0.62 0.61 0.60 0.60 0.62 0.65 0.68 0.70 0.72 0.76 0.83 0.86 0.88 0.90 0.87 0.88 0.88 0.87 0.92

Ang.
-18.6 -80.2 -117.3 -123.8 -149.2 -164.5 -167.8 176.6 162.6 137.4 115.9 97.6 80.6 62.6 45.4 28.5 14.1 -0.4 -14.9 -31.4 -46.0 -54.8 -62.8 -73.7

dB
28.88 26.11 23.01 22.33 19.49 17.75 17.36 15.66 14.23 11.91 10.00 8.36 7.01 5.76 4.60 3.28 1.87 0.69 -0.39 -1.72 -3.38 -5.17 -6.73 -7.93

S21 Mag.
27.80 20.22 14.15 13.07 9.43 7.72 7.38 6.07 5.15 3.94 3.16 2.62 2.24 1.94 1.70 1.46 1.24 1.08 0.96 0.82 0.68 0.55 0.46 0.40

S12 Ang.
167.8 128.3 106.4 102.4 86.2 75.7 73.3 61.9 51.1 30.9 11.7 -6.6 -24.3 -42.3 -60.5 -79.6 -97.0 -112.8 -130.2 -148.8 -166.0 179.8 168.4 154.3

S22 Ang.
80.1 52.4 41.7 40.2 36.1 34.0 33.5 30.7 27.3 18.7 9.0 -1.4 -12.9 -24.7 -36.1 -51.8 -65.4 -78.0 -92.2 -107.3 -121.2 -132.2 -142.3 -155.6

Mag.
0.01 0.03 0.04 0.04 0.05 0.06 0.06 0.07 0.07 0.09 0.10 0.11 0.12 0.13 0.14 0.15 0.15 0.15 0.15 0.15 0.14 0.13 0.12 0.11

Mag.
0.58 0.42 0.31 0.29 0.22 0.18 0.18 0.14 0.11 0.07 0.09 0.12 0.15 0.17 0.23 0.32 0.41 0.47 0.51 0.58 0.63 0.69 0.72 0.75

Ang.
-12.6 -52.3 -73.3 -76.9 -89.4 -95.5 -97.0 -104.0 -113.4 -154.7 152.5 127.9 106.9 78.9 56.8 42.1 29.4 16.0 -1.1 -17.6 -32.6 -43.7 -54.2 -67.2

MSG/MAG dB
34.44 28.29 25.49 25.14 22.76 21.09 20.90 19.38 18.67 15.46 13.20 11.73 10.47 9.31 8.69 9.88 9.17 8.57 8.06 4.90 3.86 2.65 1.33 2.26

Typical Noise Parameters, VDS = 4V, IDS = 60 mA

Freq GHz
0.5 0.9 1.0 1.9 2.0 2.4 3.0 3.9 5.0 5.8 6.0 7.0 8.0 9.0 10.0

Fmin dB
0.17 0.25 0.27 0.45 0.49 0.56 0.63 0.73 0.96 1.20 1.23 1.33 1.66 1.71 1.85

opt Mag.
0.33 0.31 0.31 0.27 0.27 0.26 0.28 0.35 0.47 0.52 0.54 0.60 0.63 0.71 0.82

opt Ang.
34.30 60.30 68.10 115.00 119.80 143.50 176.80 -145.90 -116.20 -98.80 -96.90 -77.40 -56.20 -38.60 -21.30

Rn/50
0.03 0.04 0.04 0.04 0.04 0.04 0.04 0.05 0.11 0.19 0.21 0.38 0.64 0.99 1.51

Ga dB
MSG/MAG and S21 (dB)

40 35 30 25 20 15 10 5 0 -5 10 -15 0 5 10 FREQUENCY (GHz) 15 20

S21 MAG MSG MAG MSG

28.02 24.12 23.43 18.72 18.35 16.71 15.58 13.62 12.25 11.23 11.02 9.94 8.81 8.22 8.12

Figure 22. MSG/MAG and |S21|2 vs. Frequency at 4V, 60 mA.

Notes: 1. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements a true Fmin is calculated. Refer to the noise parameter application section for more information. 2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the gate lead. The output reference plane is at the end of the drain lead. The parameters include the effect of four plated through via holes connecting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the carrier. Two 0.020 inch diameter via holes are placed within 0.010 inch from each source lead contact point, one via on each side of that point.

ATF-54143 Applications Information Introduction

Avago Technologies ATF-54143 is a low noise enhancement mode PHEMT designed for use in low cost commercial applications in the VHF through 6 GHz frequency range. As opposed to a typical depletion mode PHEMT where the gate must be made negative with respect to the source for proper operation, an enhancement mode PHEMT requires that the gate be made more positive than the source for normal operation. Therefore a negative power supply voltage is not required for an enhancement mode device. Biasing an enhancement mode PHEMT is much like biasing the typical bipolar junction transistor. Instead of a 0.7V base to emitter voltage, the ATF-54143 enhancement mode PHEMT requires about a 0.6V potential between the gate and source for a nominal drain current of 60 mA.

also provide a termination for low frequency mixing products. These mixing products are as a result of two or more in-band signals mixing and producing third order in-band distortion products. The low frequency or difference mixing products are bypassed by C3 and C6. For best suppression of third order distortion products based on the CDMA 1.25 MHz signal spacing, C3 and C6 should be 0.1 F in value. Smaller values of capacitance will not suppress the generation of the 1.25 MHz difference signal and as a result will show up as poorer two tone IP3 results.

Bias Networks
One of the major advantages of the enhancement mode technology is that it allows the designer to be able to dc ground the source leads and then merely apply a positive voltage on the gate to set the desired amount of quiescent drain current Id. Whereas a depletion mode PHEMT pulls maximum drain current when Vgs = 0V, an enhancement mode PHEMT pulls only a small amount of leakage current when Vgs=0V. Only when Vgs is increased above Vto, the device threshold voltage, will drain current start to flow. At a Vds of 3V and a nominal Vgs of 0.6V, the drain current Id will be approximately 60 mA. The data sheet suggests a minimum and maximum Vgs over which the desired amount of drain current will be achieved. It is also important to note that if the gate terminal is left open circuited, the device will pull some amount of drain current due to leakage current creating a voltage differential between the gate and source terminals.

Matching Networks
The techniques for impedance matching an enhancement mode device are very similar to those for matching a depletion mode device. The only difference is in the method of supplying gate bias. S and Noise Parameters for various bias conditions are listed in this data sheet. The circuit shown in Figure 23 shows a typical LNA circuit normally used for 900 and 1900 MHz applications (Consult the Avago Technologies website for application notes covering specific applications). High pass impedance matching networks consisting of L1/C1 and L4/C4 provide the appropriate match for noise figure, gain, S11 and S22. The high pass structure also provides low frequency gain reduction which can be beneficial from the standpoint of improving out-ofband rejection at lower frequencies.
INPUT Zo C1 C4 Q1 Zo OUTPUT

Passive Biasing
Passive biasing of the ATF-54143 is accomplished by the use of a voltage divider consisting of R1 and R2. The voltage for the divider is derived from the drain voltage which provides a form of voltage feedback through the use of R3 to help keep drain current constant. Resistor R5 (approximately 10k) provides current limiting for the gate of enhancement mode devices such as the ATF-54143. This is especially important when the device is driven to P1dB or PSAT. Resistor R3 is calculated based on desired Vds, Ids and available power supply voltage.

J1

L4 L1 L2 C2 R3 L3 C5

J2

R4

R5 R1

C3 R2 Vdd

C6

Figure 23. Typical ATF-54143 LNA with Passive Biasing.

R3 = VDD Vds Ids + IBB

p

(1)

Capacitors C2 and C5 provide a low impedance in-band RF bypass for the matching networks. Resistors R3 and R4 provide a very important low frequency termination for the device. The resistive termination improves low frequency stability. Capacitors C3 and C6 provide the low frequency RF bypass for resistors R3 and R4. Their value should be chosen carefully as C3 and C6 10

VDD is the power supply voltage. Vds is the device drain to source voltage. Ids is the desired drain current.

IBB is the current flowing through the R1/R2 resistor voltage divider network. The values of resistors R1 and R2 are calculated with the following formulas R1 = Vgs IBB
p

combined series value of these resistors also sets the amount of extra current consumed by the bias network. The equations that describe the circuits operation are as follows. VE = Vds + (Ids R4) R3 = VDD VE Ids (1) (2)
p

(2)

R2 = (Vds Vgs) R1 Vgs

(3) VB = VE VBE VB = R1 VDD R1 + R2

p

(3) (4)

Example Circuit
VDD = 5 V Vds = 3V Ids = 60 mA Vgs = 0.59V Choose IBB to be at least 10X the normal expected gate leakage current. IBB was chosen to be 2 mA for this example. Using equations (1), (2), and (3) the resistors are calculated as follows R1 = 295 R2 = 1205 R3 = 32.3

VDD = IBB (R1 + R2)

(5)

Rearranging equation (4) provides the following formula: R1 (VDD VB) VB and rearranging equation (5) provides the following formula: VDD R1 =
9

R2 =

(4A)

Active Biasing
Active biasing provides a means of keeping the quiescent bias point constant over temperature and constant over lot to lot variations in device dc performance. The advantage of the active biasing of an enhancement mode PHEMT versus a depletion mode PHEMT is that a negative power source is not required. The techniques of active biasing an enhancement mode device are very similar to those used to bias a bipolar junction transistor.
INPUT Zo L1 L2 R5 C2 L3 C5 R4 C3 R6 C7 Q2 R7 R1 R2 R3 C6 Vdd C1 Q1 C4 Zo OUTPUT

(5A)

IBB 1 + VDD VB VB Example Circuit VDD = 5V Vds = 3V Ids = 60 mA R4 = 10 VBE = 0.7 V

L4

Figure 24. Typical ATF-54143 LNA with Active Biasing.

An active bias scheme is shown in Figure 24. R1 and R2 provide a constant voltage source at the base of a PNP transistor at Q2. The constant voltage at the base of Q2 is raised by 0.7 volts at the emitter. The constant emitter voltage plus the regulated VDD supply are present across resistor R3. Constant voltage across R3 provides a constant current supply for the drain current. Resistors R1 and R2 are used to set the desired Vds. The 11

Equation (1) calculates the required voltage at the emitter of the PNP transistor based on desired Vds and Ids through resistor R4 to be 3.6V. Equation (2) calculates the value of resistor R3 which determines the drain current Ids. In the example R3=23.3. Equation (3) calculates the voltage required at the junction of resistors R1 and R2. This voltage plus the step-up of the base emitter junction determines the regulated Vds. Equations (4) and (5) are solved simultaneously to determine the value of resistors R1 and R2. In the example R1=1450 and R2=1050. R7 is chosen to be 1k. This resistor keeps a small amount of current flowing through Q2 to help maintain bias stability. R6 is chosen to be 10k. This value of resistance is necessary to limit Q1 gate current in the presence of high RF drive level (especially when Q1 is driven to P1dB gain compression point).

ATF-54143 Die Model

Advanced_Curtice2_Model MESFETM1 NFET=yes Rf= PFET=no Gscap=2 Vto=0.3 Cgs=1.73 pF Beta=0.9 Cgd=0.255 pF Lambda=82e-3 Gdcap=2 Alpha=13 Fc=0.65 Tau= Rgd=0.25 Ohm Tnom=16.85 Rd=1.0125 Ohm Idstc= Rg=1.0 Ohm Ucrit=-0.72 Vgexp=1.91 Rs=0.3375 Ohm Gamds=1e-4 Ld= Vtotc= Lg=0.18 nH Betatce= Ls= Rgs=0.25 Ohm Cds=0.27 pF Rc=250 Ohm

Crf=0.1 F Gsfwd= Gsrev= Gdfwd= Gdrev= R1= R2= Vbi=0.8 Vbr= Vjr= Is= Ir= Imax= Xti= Eg=

N= Fnc=1 MHz R=0.08 P=0.2 C=0.1 Taumdl=no wVgfwd= wBvgs= wBvgd= wBvds= wldsmax= wPmax= AllParams=

ATF-54143 curtice ADS Model

INSIDE Package
Var Egn

VAR VAR1 K=5 Z2=85 Z1=30

GATE
Port G Num=1 TLINP TL4 Z=Z1 Ohm L=15 mil K=1 A=0.000 F=1 GHz TanD=0.001

C C1 C=0.13 pF TLINP TL3 Z=Z2 Ohm L=25 mil K=K A=0.000 F=1 GHz TanD=0.001

TLINP TL1 Z=Z2/2 Ohm L=20 0 mil K=K A=0.0000 GaAsFET F=1 GHz FET1 TanD=0.001 Mode1=MESFETM1 Mode=Nonlinear L L1 L=0.477 nH R=0.001

TLINP TL2 Z=Z2/2 Ohm L=20 0 mil K=K A=0.0000 F=1 GHz TanD=0.001 L L6 L=0.175 nH R=0.001 TLINP TLINP TL7 TL8 Z=Z2/2 Ohm Z=Z1 Ohm L=5.0 mil L=15.0 mil K=K K=1 C A=0.0000 A=0.0000 C2 F=1 GHz F=1 GHz C=0.159 pF TanD=0.001 TanD=0.001 TLINP TL5 Z=Z2 Ohm L=26.0 mil K=K A=0.0000 F=1 GHz TanD=0.001 TLINP TL6 Z=Z1 Ohm L=15.0 mil K=1 A=0.0000 F=1 GHz TanD=0.001

SOURCE
Port S2 Num=4

DRAIN
Port D Num=3

SOURCE
Port S1 Num=2 TLINP TL10 Z=Z1 Ohm L=15 mil K=1 A=0.000 F=1 GHz TanD=0.001 TLINP TL9 Z=Z2 Ohm L=10.0 mil K=K A=0.000 F=1 GHz TanD=0.001 L L4 L=0.4 nH R=0.001 MSub MSUB MSub1 H=25.0 mil Er=9.6 Mur=1 Cond=1.0E+50 Hu=3.9e+034 mil T=0.15 mil TanD=0 Rough=0 mil

L L7 L=0.746 nH R=0.001

12

Designing with S and Noise Parameters and the Non-Linear Model

The non-linear model describing the ATF-54143 includes both the die and associated package model. The package model includes the effect of the pins but does not include the effect of the additional source inductance associated with grounding the source leads through the printed circuit board. The device S and Noise Parameters do include the effect of 0.020 inch thickness printed circuit board vias. When comparing simulation results between the measured S parameters and the simulated non-linear model, be sure to include the effect of the printed circuit board to get an accurate comparison. This is shown schematically in Figure 25.

For Further Information

The information presented here is an introduction to the use of the ATF-54143 enhancement mode PHEMT. More detailed application circuit information is available from Avago Technologies. Consult the web page or your local Avago Technologies sales representative.

VIA2 V1 D=20.0 mil H=25.0 mil T=0.15 mil Rho=1.0 W=40.0 mil

DRAIN

SOURCE

VIA2 V3 D=20.0 mil H=25.0 mil T=0.15 mil Rho=1.0 W=40.0 mil

ATF-54143

SOURCE VIA2 V2 D=20.0 mil H=25.0 mil T=0.15 mil Rho=1.0 W=40.0 mil

GATE

VIA2 V4 D=20.0 mil H=25.0 mil T=0.15 mil Rho=1.0 W=40.0 mil

MSub
MSUB MSub1 H=25.0 mil Er=9.6 Mur=1 Cond=1.0E+50 Hu=3.9e+034 mil T=0.15 mil TanD=0 Rough=0 mil

Figure 25. Adding Vias to the ATF-54143 Non-Linear Model for Comparison to Measured S and Noise Parameters.

13

Noise Parameter Applications Information

Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements, a true Fmin is calculated. Fmin represents the true minimum noise figure of the device when the device is presented with an impedance matching network that transforms the source impedance, typically 50, to an impedance represented by the reflection coefficient Go. The designer must design a matching network that will present Go to the device with minimal associated circuit losses. The noise figure of the completed amplifier is equal to the noise figure of the device plus the losses of the matching network preceding the device. The noise figure of the device is equal to Fmin only when the device is presented with Go. If the reflection coefficient of the matching network is other than Go, then the noise figure of the device will be greater than Fmin based on the following equation. NF = Fmin + 4 Rn |s o | 2 Zo (|1 + o| 2)(1 - |s| 2) Where Rn/Zo is the normalized noise resistance, Go is the optimum reflection coefficient required to produce Fmin and Gs is the reflection coefficient of the source impedance actually presented to the device. The losses of the matching networks are non-zero and they will also add to the noise figure of the device creating a higher amplifier noise figure. The losses of the matching networks are related to the Q of the components and associated printed circuit board loss. Go is typically fairly low at higher frequencies and increases as frequency is lowered. Larger gate width devices will typically have a lower Go as compared to narrower gate width devices. Typically for FETs, the higher Go usually infers that an impedance much higher than 50 is required for the device to produce Fmin. At VHF frequencies and even lower L Band frequencies, the required impedance can be in the vicinity of several thousand ohms. Matching to such a high impedance requires very hi-Q components in order to minimize circuit losses. As an example at 900 MHz, when airwwound coils (Q>100) are used for matching networks, the loss can still be up to 0.25 dB which will add directly to the noise figure of the device. Using muiltilayer molded inductors with Qs in the 30 to 50 range results in additional loss over the airwound coil. Losses as high as 0.5 dB or greater add to the typical 0.15 dB Fmin of the device creating an amplifier noise figure of nearly 0.65 dB. A discussion concerning calculated and measured circuit losses and their effect on amplifier noise figure is covered in Avago Technologies Application 1085.

14

Ordering Information
Part Number
ATF-54143-TR1G ATF-54143-TR2G ATF-54143-BLKG

No. of Devices
3000 10000 100

Container
7 Reel 13Reel antistatic bag

Package Dimensions Outline 43 (SO%-343/SC70 4 lead)

1.30 (.051) BSC

Recommended PCB Pad Layout for Avagos SC70 4L/SOT-343 Products

1.30 (0.051) 1.00 (0.039)

HE

E 0.60 (0.024)

2.00 (0.079)

1.15 (.045) BSC b1 D 1.15 (0.045) A A2 Dimensions in mm (inches) 0.9 (0.035)

b DIMENSIONS (mm) SYMBOL E D HE A A2 A1 b b1 c L MIN. 1.15 1.85 1.80 0.80 0.80 0.00 0.15 0.55 0.10 0.10

A1 L

MAX. 1.35 2.25 2.40 1.10 1.00 0.10 0.40 0.70 0.20 0.46

NOTES: 1. All dimensions are in mm. 2. Dimensions are inclusive of plating. 3. Dimensions are exclusive of mold flash & metal burr. 4. All specifications comply to EIAJ SC70. 5. Die is facing up for mold and facing down for trim/form, ie: reverse trim/form. 6. Package surface to be mirror finish.

15

Device Orientation
REEL 4 mm

CARRIER TAPE USER FEED DIRECTION COVER TAPE

8 mm

4Fx

4Fx

4Fx

4Fx

TOP VIEW

END VIEW

Tape Dimensions For Outline 4T

P Po D P2

F W C

t1 (CARRIER TAPE THICKNESS)

D1

Tt (COVER TAPE THICKNESS)

10 MAX.

Ko

10 MAX.

Ao DESCRIPTION CAVITY LENGTH WIDTH DEPTH PITCH BOTTOM HOLE DIAMETER DIAMETER PITCH POSITION WIDTH THICKNESS WIDTH TAPE THICKNESS CAVITY TO PERFORATION (WIDTH DIRECTION) CAVITY TO PERFORATION (LENGTH DIRECTION) SYMBOL Ao Bo Ko P D1 D Po E W t1 C Tt F P2 SIZE (mm) 2.40 0.10 2.40 0.10 1.20 0.10 4.00 0.10 1.00 + 0.25 1.55 0.10 4.00 0.10 1.75 0.10 8.00 + 0.30 - 0.10 0.254 0.02 5.40 0.10 0.062 0.001 3.50 0.05 2.00 0.05 SIZE (INCHES) 0.094 0.004 0.094 0.004 0.047 0.004 0.157 0.004 0.039 + 0.010 0.061 + 0.002 0.157 0.004 0.069 0.004 0.315 + 0.012 0.0100 0.0008 0.205 + 0.004 0.0025 0.0004 0.138 0.002 0.079 0.002

Bo

PERFORATION

CARRIER TAPE COVER TAPE DISTANCE

For product information and a complete list of distributors, please go to our web site: www.avagotech.com Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies in the United States and other countries. Data subject to change. Copyright 2005-2012 Avago Technologies. All rights reserved. Obsoletes AV01-0620EN AV02-0488EN - June 8, 2012