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MTP3055E

N-CHANNEL 60V - 0.1 - 12A TO-220 STripFET POWER MOSFET


TYPE MTP3055E
I I I I I

VDSS 60 V

RDS(on) < 0.15

ID 12 A

TYPICAL RDS(on) = 0.1 AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED 175C OPERATING TEMPERATURE APPLICATION ORIENTED CHARACTERIZATION

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TO-220

INTERNAL SCHEMATIC DIAGRAM APPLICATIONS I HIGH CURRENT, HIGH SPEED SWITCHING I SOLENOID AND RELAY DRIVERS I REGULATORS I DC-DC & DC-AC CONVERTERS I MOTOR CONTROL, AUDIO AMPLIFIERS I AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.)

ABSOLUTE MAXIMUM RATINGS


Symbol VDS VDGR VGS ID IDm IDM ( ) PTOT Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 k) Gate- source Voltage Drain Current (continuous) at TC = 25C Drain Current (pulsed) at TC = 100C Drain Current (pulsed) Total Dissipation at TC = 25C Storage Temperature Max. Operating Junction Temperature Value 60 60 20 12 9 48 40 65 to 175 175 Unit V V V A A A W C C

(G ) Pulse width limited by safe operating area First digit of the datecode being Z or K identifies silicon characterized in this datasheet

August 2002

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THERMAL DATA
Rthj-case Rthj-amb Rthc-s Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature For Soldering Purpose 3.75 62.5 0.5 300 C/W C/W C/W C

AVALANCHE CHARACTERISTICS
Symbol IAR EAS Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tjmax) Single pulse Avalanche Energy (starting Tj = 25C, ID =IAR,VDD = 25 V Max Value 12 50 Unit A mJ

ELECTRICAL CHARACTERISTICS (TCASE = 25 C UNLESS OTHERWISE SPECIFIED) OFF


Symbol V(BR)DSS IDSS Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) IGSS Gate-body Leakage Current (VDS = 0) Test Conditions ID = 250 A, VGS = 0 VDS = Max Rating VDS = Max Rating x 0.8, TC= 125 C VGS = 20V Min. 60 1 10 100 Typ. Max. Unit V A A nA

ON (1)
Symbol VGS(th) RDS(on) ID(on) Parameter Gate Threshold Voltage Static Drain-source On Resistance On State Drain Current Test Conditions VDS = VGS, ID = 250 A VGS = 10 V, ID = 7 A VDS> ID(on) X RDS(on)max VGS = 10V 12 Min. 2 Typ. 2.9 0.1 Max. 4 0.15 Unit V A

DYNAMIC
Symbol gfs (1) Ciss Coss Crss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VDS= ID(on) X RDS(on)max , ID = 6 A VDS = 25 V, f = 1 MHz, V GS = 0 Min. 4 Typ. 6 760 100 30 Max. Unit S pF pF pF

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MTP3055E
ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING RESISTIVE LOAD
Symbol td(on) tr td(off) tf Qg Qgs Qgd Parameter Turn-on Time Rise Time Turn-off-Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions VDD = 30 V, ID = 7 A RG = 50 VGS = 10V (see test circuit) ID = 12 A,VGS = 10 V, VDD = 40V (see test circuit) Min. Typ. 20 65 70 35 15 7 5 Max. Unit ns ns ns ns nC nC nC

SOURCE DRAIN DIODE


Symbol ISD ISDM (2) VSD (1) trr Qrr Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge ISD = 12 A, VGS = 0 ISD = 12 A, di/dt = 100 A/s, VDD = 30 V, Tj = 150C 65 0.17 Test Conditions Min. Typ. Max. 12 48 2 Unit A A V ns C

Note: 1. Pulsed: Pulse duration = 300 s, duty cycle 1.5 %. 2. Pulse width limited by safe operating area.

Safe Operating Area

Thermal Impedance

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Output Characteristics Transfer Characteristics

Transconductance

Static Drain-source On Resistance

Gate Charge vs Gate-source Voltage

Capacitance Variations

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Normalized Gate Threshold Voltage vs Temp. Normalized On Resistance vs Temperature

Source-drain Diode Forward Characteristics

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Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform

Fig. 3: Switching Times Test Circuit For Resistive Load

Fig. 4: Gate Charge test Circuit

Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times

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MTP3055E

TO-220 MECHANICAL DATA


DIM. MIN. A C D D1 E F F1 F2 G G1 H2 L2 L4 L5 L6 L7 L9 DIA. 13.0 2.65 15.25 6.2 3.5 3.75 0.49 0.61 1.14 1.14 4.95 2.4 10.0 16.4 14.0 2.95 15.75 6.6 3.93 3.85 0.511 0.104 0.600 0.244 0.137 0.147 4.40 1.23 2.40 1.27 0.70 0.88 1.70 1.70 5.15 2.7 10.40 0.019 0.024 0.044 0.044 0.194 0.094 0.393 0.645 0.551 0.116 0.620 0.260 0.154 0.151 mm TYP. MAX. 4.60 1.32 2.72 MIN. 0.173 0.048 0.094 0.050 0.027 0.034 0.067 0.067 0.203 0.106 0.409 inch TYP. MAX. 0.181 0.051 0.107

D1

L2

F1

G1

E
Dia. L5 L7 L6 L4
P011C

L9

F2

H2

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MTP3055E

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics 2002 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com

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