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\
| A
A A + =
|
|
.
|
\
|
A + A
2 2
2
0 1 ,
2
0 5 ,
V
V V B V V k
V
V V V B V V V k
n n T DD M n
DSATn
DSATn DD n n T DD M n
( ) ( ) ( ) ( )
( )CR B
V V CR CR V V V CR V B
V
n
n T DD DSATn n T DD DSATn n
2 1
2 1 1
2
0
2 2
0
+ + + +
~ A
Slide 7 W. Rhett Davis NC State University ECE 546 Fall 2012
CMOS SRAM Analysis (Read)
For which side of this curve does the SRAM work properly?
0
0
0.2
0.4
0.6
0.8
1
1.2
0.5 1 1.2 1.5 2
Cell Ratio (CR)
2.5 3
V
o
l
t
a
g
e
R
i
s
e
(
V
)
Slide 8 W. Rhett Davis NC State University ECE 546 Fall 2012
Read Static Noise Margin (SNM)
A more robust definition is the maximum noise voltage
needed to flip the value during a read
For simplicity on HW and Exams, we wont use this definition
At low supply voltages, Read SNM is too often negative,
due to Vt variation between transistors
As a result, supply voltages have not scaled below 1V in
advanced technologies
Source:
Calhoun &
Chandrakasan,
JSSC 2007
V from slide 6
Slide 9 W. Rhett Davis NC State University ECE 546 Fall 2012
CMOS SRAM Analysis (Write)
Assume cell contains 1, try to write 0
What needs to happen for a successful write?
BL
=
1 BL
=
0
Q
=
0
Q
=
1
M
1
M
4
M
5
M
6
V
DD
V
DD
WL
Slide 10 W. Rhett Davis NC State University ECE 546 Fall 2012
Conditions for Successful Write
Modified equations
(12.5) and (12.6)
(by Harun Demircioglu)
What are the operating
regions assumed by
these equations?
Is this valid for our
technology?
BL
=
1 BL
=
0
Q
=
0
Q
=
1
M
1
M
4
M
5
M
6
V
DD
V
DD
WL
6 6
4 4
L W
L W
PR =
( ) ( ) ( )
|
|
.
|
\
|
=
|
|
.
|
\
|
+
2 2
2
0 4 ,
2
0 6 ,
DSATp
DSATp DD Q p p T DD M p
Q
Q Q n n T DD M n
V
V V V B V V k
V
V V B V V k
( ) ( ) ( )
( )
n
DSATp
DSATp p T DD p
n
p
DSATp p n T DD DSATp p n T DD
Q
B
V
V V V B PR V B V V V B V V
V
2 1
2
1 2
2
0
2
0 0
|
|
.
|
\
|
+ +
=