SPN4526

N-Channel Enhancement Mode MOSFET

DESCRIPTION The SPN4526 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application , notebook computer power management and other battery powered circuits where high-side switching . FEATURES 40V/10A,RDS(ON)= 25m@VGS= 10V 40V/ 8A,RDS(ON)= 30m@VGS= 4.5V 40V/ 6A,RDS(ON)= 36m@VGS= 2.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOP 8P package design APPLICATIONS Power Management in Note book Portable Equipment Battery Powered System DC/DC Converter Load Switch DSC LCD Display inverter

PIN CONFIGURATION(SOP 8P)

PART MARKING

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SPN4526
N-Channel Enhancement Mode MOSFET
PIN DESCRIPTION

Pin 1 2 3 4 5 6 7 8

Symbol S S S G D D D D

Description Source Source Source Gate Drain Drain Drain Drain

ORDERING INFORMATION Part Number SPN4526S8RGB Package SOP- 8P Part Marking SPN4526

SPN4526S8RGB 13 Tape Reel ; Pb Free ; Halogen Free

ABSOULTE MAXIMUM RATINGS (TA=25 Unless otherwise noted) Parameter Drain-Source Voltage Gate Source Voltage Continuous Drain Current(TJ=150) Pulsed Drain Current Continuous Source Current(Diode Conduction) Power Dissipation Operating Junction Temperature Storage Temperature Range Thermal Resistance-Junction to Ambient TA=25 TA=70 TA=25 TA=70 Symbol VDSS VGSS ID IDM IS PD TJ TSTG RJA Typical 40 20 10 8 30 2.3 2.5 1.6 -55/150 -55/150 80 Unit V V A A A W /W

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ELECTRICAL CHARACTERISTICS (TA=25 Unless otherwise noted)

Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Leakage Current Zero Gate Voltage Drain Current On-State Drain Current Drain-Source On-Resistance Forward Transconductance Diode Forward Voltage Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Time Turn-Off Time

Symbol

Conditions

Min.

Typ

Max.

Unit

V(BR)DSS VGS=0V,ID=250uA VGS(th) VDS=VGS,ID=250uA IGSS IDSS ID(on) RDS(on) gfs VSD Qg Qgs Qgd Ciss Coss Crss td(on) tr td(off) tf VDD=20V,RL=4 ID5.0A,VGEN=10V RG=1 VDS=20V,VGS=0V f=1MHz VDS=0V,VGS=20V VDS=32V,VGS=0V VDS=32V,VGS=0V TJ=55 VDS= 5V,VGS =4.5V VGS= 10V,ID=10A VGS=4.5V,ID= 8A VGS=2.5V,ID= 6A VDS=15V,ID=6.2A IS=2.3A,VGS =0V

40 0.5 1.0 100 1 10 10 0.020 0.023 0.027 13 0.8 25 2.8 3.2 850 110 75 6 10 20 6 12 20 36 12 0.025 0.030 0.036 1.2 34

V nA uA A S V

VDS=20V,VGS=4.5V ID= 5A

nC

pF

nS

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SPN4526
N-Channel Enhancement Mode MOSFET
TYPICAL CHARACTERISTICS

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SPN4526
N-Channel Enhancement Mode MOSFET
TYPICAL CHARACTERISTICS

TYPICAL CHARACTERISTICS
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N-Channel Enhancement Mode MOSFET

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N-Channel Enhancement Mode MOSFET
SOP- 8 PACKAGE OUTLINE

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Information provided is alleged to be exact and consistent. SYNC Power Corporation presumes no responsibility for the penalties of use of such information or for any violation of patents or other rights of third parties which may result from its use. No license is granted by allegation or otherwise under any patent or patent rights of SYNC Power Corporation. Conditions mentioned in this publication are subject to change without notice. This publication surpasses and replaces all information previously supplied. SYNC Power Corporation products are not authorized for use as critical components in life support devices or systems without express written approval of SYNC Power Corporation. The SYNC Power logo is a registered trademark of SYNC Power Corporation 2004 SYNC Power Corporation Printed in Taiwan All Rights Reserved SYNC Power Corporation 7F-2, No.3-1, Park Street NanKang District (NKSP), Taipei, Taiwan 115 Phone: 886-2-2655-8178 Fax: 886-2-2655-8468 http://www.syncpower.com 2011/10/04

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