Power Transistors

2SD1267, 2SD1267A
Silicon NPN triple diffusion planar type
0.70.1

For power amplification Complementary to 2SB0942 and 2SB0942A I Features

High forward current transfer ratio hFE which has satisfactory linearity Low collector to emitter saturation voltage VCE(sat) Full-pack package which can be installed to the heat sink with one screw
16.70.3

Unit: mm
10.00.2 5.50.2 4.20.2 2.70.2

7.50.2

3.10.1

4.20.2

Solder Dip (4.0)

14.00.5

I Absolute Maximum Ratings TC = 25C

Parameter Collector to base voltage Collector to emitter voltage 2SD1267 2SD1267A 2SD1267 2SD1267A VEBO ICP IC TC = 25C Ta = 25C Tj Tstg PC VCEO Symbol VCBO Rating 60 80 60 80 5 8 4 40 2 150 55 to +150 C C V A A W V Unit V

1.40.1

1.30.2 0.5+0.2 0.1

0.80.1

2.540.3 5.080.5

1 2 3

Emitter to base voltage Peak collector current Collector current Collector power dissipation

1: Base 2: Collector 3: Emitter EIAJ: SC-67 TO-220F-A1 Package

Junction temperature Storage temperature

I Electrical Characteristics TC = 25C

Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector to emitter voltage 2SD1267 2SD1267A hFE1 * hFE2 Base to emitter voltage Collector to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time Note) *: Rank classification Rank hFE1 Q 70 to 150 P 120 to 250 VBE VCE(sat) fT ton tstg tf VCE = 4 V, IC = 1 A VCE = 4 V, IC = 3 A VCE = 4 V, IC = 3 A IC = 4 A, IB = 0.4 A VCE = 5 V, IC = 0.5 A, f = 1 MHz IC = 4 A, IB1 = 0.4 A, IB2 = 0.4 A, VCC = 50 V 20 0.4 1.5 0.5 2SD1267 2SD1267A 2SD1267 2SD1267A IEBO VCEO ICEO Symbol ICES Conditions VCB = 60 V, VBE = 0 VCB = 80 V, VBE = 0 VCE = 30 V, IB = 0 VCE = 60 V, IB = 0 VEB = 5 V, IC = 0 IC = 30 mA, IB = 0 60 80 70 15 2 1.5 V V MHz s s s 250 Min Typ Max 400 400 700 700 1 mA V A Unit A

Forward current transfer ratio

285

2SD1267, 2SD1267A
PC T a
50 6 (1) TC=Ta (2) With a 100 100 2mm Al heat sink (3) With a 50 50 2mm Al heat sink (4) Without heat sink (PC=2W) TC=25C 5 IB=150mA 7

Power Transistors
IC VCE
8 VCE=4V 25C TC=100C 25C

IC VBE

Collector power dissipation PC (W)

Collector current IC (A)

Collector current IC (A)

20

40

(1)

100mA 4 80mA 60mA 3 40mA 30mA 2 20mA 10mA 1 5mA 0

6 5 4 3 2 1 0

30

20

10

(2) (3) (4)

0 0 20 40 60 80 100 120 140 160

12

16

0.4

0.8

1.2

1.6

2.0

2.4

Ambient temperature Ta (C)

Collector to emitter voltage VCE (V)

Base to emitter voltage VBE (V)

VCE(sat) IC
Collector to emitter saturation voltage VCE(sat) (V)
100 IC/IB=10 30 10 3 1 0.3 0.1 0.03 0.01 0.01 0.03 TC=100C 10000

hFE IC
10000 VCE=4V 3000 1000 300 100 30 10 3 1 0.01 0.03

fT I C
VCE=10V f=1MHz TC=25C

Forward current transfer ratio hFE

1000 300 100 25C 30 10 3 1 0.01 0.03 25C

TC=100C

25C 25C

0.1

0.3

10

0.1

0.3

10

Transition frequency fT (MHz)

3000

0.1

0.3

10

Collector current IC (A)

Collector current IC (A)

Collector current IC (A)

Area of safe operation (ASO)

100 30 103 Non repetitive pulse TC=25C

Rth(t) t
(1) Without heat sink (2) With a 100 100 2mm Al heat sink (1)

Thermal resistance Rth(t) (C/W)

Collector current IC (A)

10 ICP 3 IC 1 0.3 0.1 0.03 0.01 1 3 10 30 10ms DC t=1ms

102

10

(2)

2SD1267A

2SD1267

101

100

300

1000

102 104

103

102

101

10

102

103

104

Collector to emitter voltage VCE (V)

Time t (s)

286

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2001 MAR

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