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OptiMOS Power-Transistor
Features N-channel - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green package (lead free) Ultra low Rds(on) 100% Avalanche tested PG-TO263-3-2
PG-TO220-3-1
PG-TO262-3-1
Maximum ratings, at T j=25 C, unless otherwise specified Parameter Continuous drain current1) Symbol ID Conditions T C=25 C, V GS=10 V T C=100 C, V GS=10 V2) Pulsed drain current2) Avalanche energy, single pulse2) Gate source voltage4) Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 I D,pulse E AS V GS P tot T j, T stg T C=25 C T C=25 C I D= 80 A Value 80 80 320 450 20 215 -55 ... +175 55/175/56 mJ V W C Unit A
Rev. 1.0
page 1
2006-03-13
1 1 6.5 6.2
Rev. 1.0
page 2
2006-03-13
t rr
55
70
ns
Q rr
85
110
nC
Current is limited by bondwire; with an R thJC = 0.7 K/W the chip is able to carry 109 A at 25C. For detailed information see Application Note ANPS071E at www.infineon.com/optimos
2) 3)
Defined by design. Not subject to production test. See diagram 13. Qualified at -20V and +20V.
4) 5)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 70 m thick) copper area for drain connection. PCB is vertical in still air.
Rev. 1.0
page 3
2006-03-13
250
100
200
80
150
60
P tot [W]
100
I D [A]
40 50 20 0 0 50 100 150 200 0 0 50 100 150 200
T C [C]
T C [C]
100
1 ms
100 s
10-1
0.1
Z thJC [K/W]
0.05
I D [A]
0.01
10
10
-2
single pulse
1 0.1 1 10 100
V DS [V]
t p [s]
Rev. 1.0
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2006-03-13
250
16
14 200
R DS(on) [m]
I D [A]
12
6V
150
6V
10
100
5.5 V
8
8V
50
5V
6
10 V
4.5 V
0 0 2 4 6 8 10
4 0 20 40 60 80 100 120
V DS [V]
I D [A]
125
g fs [S]
I D [A]
100 75
V GS [V]
I D [A]
Rev. 1.0
page 5
2006-03-13
10
3.5
750 A
R DS(on) [m]
V GS(th) [V]
150 A
2.5
4
1.5
T j [C]
T j [C]
104
103
Ciss
102
C [pF]
103
Coss
I F [A]
101
Crss
175 C
25 C
102 0 5 10 15 20 25 30
V DS [V]
V SD [V]
Rev. 1.0
page 6
2006-03-13
12
11 V
44 V
E AS [mJ]
V GS [V]
50 100 150 200
80 A
400 300
4 200 2 100 0 0 0 0 20 40 60 80
T j [C]
Q gate [nC]
66 64 62 60
V GS
Qg
V BR(DSS) [V]
Q gate
Q gs Q gd
T j [C]
Rev. 1.0
page 7
2006-03-13
Information For further information on technology, delivery terms and conditions and prices, please contact your nearest Infineon Technologies Office (www.infineon.com)
Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact your nearest Infineon Technologies Office. Infineon Technologies' components may only be used in life-support devices or systems with the expressed written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Rev. 1.0
page 8
2006-03-13