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Modern Transistors
Fig. 3.32 Type Q2T2905 Texas Instruments quad pnp silicon transistor: (a) appearance; (b) pin connections. (Courtesy Texas Instruments Incorporated.)
Copyright 2006 by Pearson Education, Inc. Upper Saddle River, New Jersey 07458 All rights reserved.
Definition
A three terminal device in which current flowing between two terminals can be controlled by a signal on the third terminal. There are two types of transistors:
pnp npn
Transistor Operation
Forward bias, base to emitter narrows the BE depletion region.
Transistor Operation
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Transistor currents.
Thomas L. Floyd Electronic Devices, 6e and Electronic Devices: Electron Flow Version, 4e
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Copyright 2002 by Pearson Education, Inc. Upper Saddle River, New Jersey 07458 All rights reserved.
Currents in a Transistor
By Kirchhoffs current law; ( 4.1)
I E IC I B
dc
IC IB
( 4.2)
dc
IC IE
( 4.3)
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Currents in a Transistor
Relationship of dc and
dc
(4.4)
I E IC I B
Dividing the Eq 4.1 by IC; Eq.4.4
IE IC I B IC IC IC
dc
dc
dc
dc 1 dc
and
dc
dc 1 dc
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Thomas L. Floyd Electronic Devices, 6e and Electronic Devices: Electron Flow Version, 4e
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Copyright 2002 by Pearson Education, Inc. Upper Saddle River, New Jersey 07458 All rights reserved.
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Operation Mode
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Operation Mode
Active:
Most importance mode, e.g. for amplifier operation. The region where current curves are practically flat.
Saturation:
Barrier potential of the junctions cancel each other out causing a virtual short. Ideal transistor behaves like a closed switch.
Cutoff:
Current reduced to zero Ideal transistor behaves like an open switch.
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Operation Mode
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DC load line on a family of collector characteristic curves illustrating the cutoff and saturation conditions.
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Circuit Configuration
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The Emitter is common to both input (base-emitter) and output (collector-emitter). The input is on the Base and the output is on the Collector.
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Common-Emitter Configuration
It is called common-emitter configuration since : - emitter is common or reference to both input and output terminals. - emitter is usually the terminal closest to or at ground potential. Almost amplifier design is using connection of CE due to the high gain for current and voltage. Two set of characteristics are necessary to describe the behavior for CE ;input (base terminal) and output (collector terminal) parameters.
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Common-Emitter Configuration
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Characteristics of Common-Emitter
IB is microamperes compared to miliamperes of IC. IB will flow when VBE > 0.7V for silicon and 0.3V for germanium Before this value IB is very small and no IB. Base-emitter junction is forward bias Increasing VCE will reduce IB for different values.
Collector characteristics = output characteristics. Base characteristics = input characteristics.
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Characteristics of Common-Emitter
Collector characteristics = output characteristics. Base characteristics = input characteristics.
VCE < VCESAT, IC increase linearly with increasing of VCE VCE > VCESAT, IC not totally depends on VCE constant IC IB(uA) is very small compare to IC (mA). Small increase in IB cause big increase in IC IB=0 A ICEO occur. Noticing the value when IC=0A. There is still some value of current 30 flows.
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Beta ()
In DC mode:
IC dc IB
IC ac IB VCE constant
[Formula 3.10]
In AC mode:
[Formula 3.11]
indicates the amplification factor of a transistor. ( is sometimes referred to as hfe, a term used in transistor modeling calculations)
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Example
From output characteristics of common emitter configuration, find ac and dc with an Operating point at IB=25 A and VCE =7.5V.
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Solution:
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Copyright 2006 by Pearson Education, Inc. Upper Saddle River, New Jersey 07458 All rights reserved.
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Common-Base Configuration
Common-base terminology is derived from the fact that the :
Common-Base Configuration
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This demonstrates the input current IE to input voltage VBE for various levels of output voltage VCB.
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Alpha ()
In the dc mode the level of IC and IE due to the majority carriers are related by a quantity called alpha IC =
IE
IC = IE + ICBO It can then be summarize to IC = IE (ignore ICBO due to small value) For ac situations where the point of operation moves on the characteristics curve, an ac alpha defined by
IC
IE
Alpha a common base current gain factor that shows the efficiency by calculating the current percent from current flow from emitter to collector.The value of is typical from 0.9 ~ 0.998.
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Biasing
Proper biasing CB configuration in active region by approximation IC IE (IB 0 uA)
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Transistor as an amplifier
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Limits of Operation
Many BJT transistor used as an amplifier. Thus it is important to notice the limits of operations. At least 3 maximum values is mentioned in data sheet.
There are:
a) Maximum power dissipation at collector: PCmax or PD b) Maximum collector-emitter voltage: VCEmax sometimes named as VBR(CEO) or VCEO. c) Maximum collector current: ICmax There are few rules that need to be followed for BJT transistor used as an amplifier. The rules are: i) transistor need to be operate in active region! ii) IC < ICmax ii) PC < PCmax
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Note:
VCE is at maximum and IC is at minimum (ICmax=ICEO) in the cutoff region. IC is at maximum and VCE is at minimum (VCE max = VCEsat = VCEO) in the saturation region. The transistor operates in the active region between saturation and cutoff.
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Power of Dissipation
Common Base:
PCmax VCBIC
PCmax VCEIC PCmax VCEIE
[Formula 3.18]
Common Emitter:
[Formula 3.16]
Common Collector: a
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Refer to the fig. Step1: The maximum collector power dissipation, PD=ICmax x VCEmax (1) = 18m x 20 = 360 mW Step 2: At any point on the characteristics the product of and must be equal to 360 mW. Ex. 1. If choose ICmax= 5 mA, subtitute into the (1), we get VCEmaxICmax= 360 mW VCEmax(5 m)=360/5=7.2 V
Ex.2. If choose VCEmax=18 V, subtitute into (1), we get VCEmaxICmax= 360 mW (10) ICmax=360m/18=20 mA
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Derating PDmax
PDmax is usually specified at 25C.
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Example
Transistor 2N3904 used in the circuit with VCE=20 V. This circuit used at temperature 1250C. Calculate the new maximum IC. Transistor 2N3904 have maximum power dissipation is 625 mW. Derating factor is 5mW/0C.
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Solution
Step 1: Temperature increase : 1250C 250C = 1000C Step 2: Derate transistor : 5 mW/0C x 1000C = 500 mW Step 3: Maximum power dissipation at 1250C = 625 mW500 mW=125 mW. Step 4: Thus ICmax = PCmax / VCE=125m/20 = 6.25 mA. Step 5:
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Example
The parameters of transistor 2N3055 as follows:
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Solution
Step 1: Temperature increase : 780C 250C = 530C Step 2: Derate transistor : 0.66mW/0C x 530C = 35 mW Step 3:
Step 5:
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Transistor Testing
1. Curve Tracer Provides a graph of the characteristic curves. 2. DMM Some DMMs will measure DC or HFE. 3. Ohmmeter
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Thomas L. Floyd Electronic Devices, 6e and Electronic Devices: Electron Flow Version, 4e
59
Copyright 2002 by Pearson Education, Inc. Upper Saddle River, New Jersey 07458 All rights reserved.