Syllabus : 1.

Semiconductor Diodes Semiconductor materials- intrinsic and extrinsic types Ideal Diode Terminal characteristics of diodes: p-n junction under open circuit condition p-n junction under forward bias and reverse bias conditions p-n junction in breakdown region Diode small signal model Zener diode and applications Rectifier Circuits Clipping and Clamping circuits 2. Bipolar Junction Transistors (BJTs) Physical structure and operation modes Active region operation of transistor D.C. analysis of transistor circuits Transistor as an amplifier Biasing the BJT: fixed bias, emitter feedback bias, collector feedback bias and voltage divider bias Basic BJT amplifier configuration: common emitter, common base and common collector amplifiers Transistor as a switch: cut-off and saturation modes High frequency model of BJT amplifier 3. Field Effect Transistor (FET) Enhancement-type MOSFET: structure and physical operation, current-voltage characteristics Depletion-type MOSFET D.C. operation of MOSFET circuits MOSFET as an amplifier Biasing in MOSFET amplifiers Basic MOSFET amplifier configuration: common source, common gate and common drain types High frequency model of MOSFET amplifier Junction Field-Effect Transistor (JFET) 4. Operation Amplifier (Op-amps) Ideal Op-amp Differential amplifier: differential and common mode operation common mode rejection ratio (CMRR) Practical op-amp circuits: inverting amplifier, non -inverting amplifier, weight ed summer, integrator, differentiator Large signal operation of op-amps Other applications of op-amps: instrumentation circuits, active filters, controlled sources, logarithmic amplifiers, waveform generators, Schmitt triggers, comparators 5. Power Circuits and Systems Class A large signal amplifiers, second-harmonic distortion Transformer coupled audio power amplifier Class B amplifier Class AB operation Power BJTs Regulated power supplies Series voltage regulator Four layer diodes: p-n-p-n characteristicsfrequency ranges is 3-17 GHz). 11.5.2 Circular Disks Through the integration over the circular area (according to Figure 11.10) resul ts the calculation of the Radar backscattering cross-section of a circular disk with r >> ? , just as in antenna technology for homogenous arrangement.

Figure 11.10 Geometry for calculating the Radar backscattering cross-section (Au fpunkt = emission point). s ? r'= 0 r? d ? = 0 2p ? df d = f (r',?,?), ? = aspect angle (11.19) Radar System Engineering Chapter 10 Characteristics of Radar Targets 103 The result of the integration reads: s = r2p Syllabus : 1. Semiconductor Diodes Semiconductor materials- intrinsic and extrinsic types Ideal Diode Terminal characteristics of diodes: p-n junction under open circuit condition p-n junction under forward bias and reverse bias conditions p-n junction in breakdown region Diode small signal model Zener diode and applications Rectifier Circuits Clipping and Clamping circuits 2. Bipolar Junction Transistors (BJTs) Physical structure and operation modes Active region operation of transistor D.C. analysis of transistor circuits Transistor as an amplifier Biasing the BJT: fixed bias, emitter feedback bias, collector feedback bias and voltage divider bias Basic BJT amplifier configuration: common emitter, common base and common collector amplifiers Transistor as a switch: cut-off and saturation modes High frequency model of BJT amplifier 3. Field Effect Transistor (FET) Enhancement-type MOSFET: structure and physical operation, current-voltage characteristics Depletion-type MOSFET D.C. operation of MOSFET circuits MOSFET as an amplifier Biasing in MOSFET amplifiers Basic MOSFET amplifier configuration: common source, common gate and common drain types High frequency model of MOSFET amplifier Junction Field-Effect Transistor (JFET) 4. Operation Amplifier (Op-amps) Ideal Op-amp Differential amplifier: differential and common mode operation common mode rejection ratio (CMRR) Practical op-amp circuits: inverting amplifier, non -inverting amplifier, weight ed summer, integrator, differentiator Large signal operation of op-amps Other applications of op-amps: instrumentation circuits, active filters, controlled sources, logarithmic amplifiers, waveform generators, Schmitt

triggers, comparators 5. Power Circuits and Systems Class A large signal amplifiers, second-harmonic distortion Transformer coupled audio power amplifier Class B amplifier Class AB operation Power BJTs Regulated power supplies Series voltage regulator Four layer diodes: p-n-p-n characteristicsSyllabus : 1. Semiconductor Diodes Semiconductor materials- intrinsic and extrinsic types Ideal Diode Terminal characteristics of diodes: p-n junction under open circuit condition p-n junction under forward bias and reverse bias conditions p-n junction in breakdown region Diode small signal model Zener diode and applications Rectifier Circuits Clipping and Clamping circuits 2. Bipolar Junction Transistors (BJTs) Physical structure and operation modes Active region operation of transistor D.C. analysis of transistor circuits Transistor as an amplifier Biasing the BJT: fixed bias, emitter feedback bias, collector feedback bias and voltage divider bias Basic BJT amplifier configuration: common emitter, common base and common collector amplifiers Transistor as a switch: cut-off and saturation modes High frequency model of BJT amplifier 3. Field Effect Transistor (FET) Enhancement-type MOSFET: structure and physical operation, current-voltage characteristics Depletion-type MOSFET D.C. operation of MOSFET circuits MOSFET as an amplifier Biasing in MOSFET amplifiers Basic MOSFET amplifier configuration: common source, common gate and common drain types High frequency model of MOSFET amplifier Junction Field-Effect Transistor (JFET) 4. OperatiSyllabus : 1. Semiconductor Diodes Semiconductor materials- intrinsic and extrinsic types Ideal Diode Terminal characteristics of diodes: p-n junction under open circuit condition p-n junction under forward bias and reverse bias conditions p-n junction in breakdown region Diode small signal model Zener diode and applications Rectifier Circuits Clipping and Clamping circuits 2. Bipolar Junction Transistors (BJTs) Physical structure and operation modes Active region operation of transistor D.C. analysis of transistor circuits Transistor as an amplifier

Biasing the BJT: fixed bias, emitter feedback bias, collector feedback bias and voltage divider bias Basic BJT amplifier configuration: common emitter, common base and common collector amplifiers Transistor as a switch: cut-off and saturation modes High frequency model of BJT amplifier 3. Field Effect Transistor (FET) Enhancement-type MOSFET: structure and physical operation, current-voltage characteristics Depletion-type MOSFET D.C. operation of MOSFET circuits MOSFET as an amplifier Biasing in MOSFET amplifiers Basic MOSFET amplifier configuration: common source, common gate and common drain types High frequency model of MOSFET amplifier Junction Field-Effect Transistor (JFET) 4. Operation Amplifier (Op-amps) Ideal Op-amp Differential amplifier: differential and common mode operation common moSyllabus : 1. Semiconductor Diodes Semiconductor materials- intrinsic and extrinsic types Ideal Diode Terminal characteristics of diodes: p-n junction under open circuit condition p-n junction under forward bias and reverse bias conditions p-n junction in breakdown region Diode small signal model Zener diode and applications Rectifier Circuits Clipping and Clamping circuits 2. Bipolar Junction Transistors (BJTs) Physical structure and operation modes Active region operation of transistor D.C. analysis of transistor circuits Transistor as an amplifier Biasing the BJT: fixed bias, emitter feedback bias, collector feedback bias and voltage divider bias Basic BJT amplifier configuration: common emitter, common base and common collector amplifiers Transistor as a switch: cut-off and saturation modes High frequency model of BJT amplifier 3. Field Effect Transistor (FET) Enhancement-type MOSFET: structure and physical operation, current-voltage characteristics Depletion-type MOSFET D.C. operation of MOSFET circuits MOSFET as an amplifier Biasing in MOSFET amplifiers Basic MOSFET amplifier configuration: common source, common gate and common drain types High frequency model of MOSFET amplifier Junction Field-Effect Transistor (JFET) 4. Operation Amplifier (Op-amps) Ideal Op-amp Differential amplifier: differential and common mode operation common mode rejection ratio (CMRR) Practical op-amp circuits: inverting amplifier, non -inverting amplifier, weight ed

summer, integrator, differentiator Large signal operation of op-amps Other applications of op-amps: instrumentation circuits, active filters, controlled sources, logarithmic amplifiers, waveform generators, Schmitt triggers,Syllabus : 1. Semiconductor Diodes Semiconductor materials- intrinsic and extrinsic types Ideal Diode Terminal characteristics of diodes: p-n junction under open circuit condition p-n junction under forward bias and reverse bias conditions p-n junction in breakdown region Diode small signal model Zener diode and applications Rectifier Circuits Clipping and Clamping circuits 2. Bipolar Junction Transistors (BJTs) Physical structure and operation modes Active region operation of transistor D.C. analysis of transistor circuits Transistor as an amplifier Biasing the BJT: fixed bias, emitter feedback bias, collector feedback bias and voltage divider bias Basic BJT amplifier configuration: common emitter, common base and common collector amplifiers Transistor as a switch: cut-off and saturation modes High frequency model of BJT amplifier 3. Field Effect Transistor (FET) Enhancement-type MOSFET: structure and physical operation, current-voltage characteristics Depletion-type MOSFET D.C. operation of MOSFET circuits MOSFET as an amplifier Biasing in MOSFET amplifiers Basic MOSFET amplifier configuration: common source, common gate and common drain types High frequency model of MOSFET amplifier Junction Field-Effect Transistor (JFET) 4. Operation Amplifier (Op-amps) Ideal Op-amp Differential amplifier: differential and common mode operation common mode rejection ratio (CMRR) Practical op-amp circuits: inverting amplifier, non -inverting amplifier, weight ed summer, integrator, differentiator Large signal operation of op-amps Other applications of op-amps: instrumentation circuits, active filters, controlled sources, logarithmic amplifiers, waveform generators, Schmitt triggers, comparators 5. Power Circuits and Systems Class A large signal amplifiers, second-harmonic distortion Transformer coupled audio power amplifier Class B amplifier Class AB operation Power BJTs Regulated power supplies Series voltage regulator Four layer diodes: p-n-p-n characteristicsSyllabus : 1. Semiconductor Diodes Semiconductor materials- intrinsic and extrinsic types

Ideal Diode Terminal characteristics of diodes: p-n junction under open circuit condition p-n junction under forward bias and reverse bias conditions p-n junction in breakdown region Diode small signal model Zener diode and applications Rectifier Circuits Clipping and Clamping circuits 2. Bipolar Junction Transistors (BJTs) Physical structure and operation modes Active region operation of transistor D.C. analysis of transistor circuits Transistor as an amplifier Biasing the BJT: fixed bias, emitter feedback bias, collector feedback bias and voltage divider bias Basic BJT amplifier configuration: common emitter, common base and common collector amplifiers Transistor as a switch: cut-off and saturation modes High frequency model of BJT amplifier 3. Field Effect Transistor (FET) Enhancement-type MOSFET: structure and physical operation, current-voltage characteristics Depletion-type MOSFET D.C. operation of MOSFET circuits MOSFET as an amplifier Biasing in MOSFET amplifiers Basic MOSFET amplifier configuration: common source, common gate and common drain types High frequency model of MOSFET amplifier Junction Field-Effect Transistor (JFET) 4. Operation Amplifier (Op-amps) Ideal Op-amp Differential amplifier: differential and common mode operation common mode rejection ratio (CMRR) Practical op-amp circuits: inverting amplifier, non -inverting amplifier, weight ed summer, integrator, differentiator Large signal operation of op-amps Other applications of op-amps: instrumentation circuits, active filters, controlled sources, logarithmic amplifiers, waveform generators, Schmitt triggers, comparators 5. Power Circuits and Systems Class A large signal amplifiers, second-harmonic distortion Transformer coupled audio power amplifier Class B amplifier Class AB operation Power BSyllabus : 1. Semiconductor Diodes Semiconductor materials- intrinsic and extrinsic types Ideal Diode Terminal characteristics of diodes: p-n junction under open circuit condition p-n junction under forward bias and reverse bias conditions p-n junction in breakdown region Diode small signal model Zener diode and applications Rectifier Circuits Clipping and Clamping circuits 2. Bipolar Junction Transistors (BJTs)

Physical structure and operation modes Active region operation of transistor D.C. analysis of transistor circuits Transistor as an amplifier Biasing the BJT: fixed bias, emitter feedback bias, collector feedback bias and voltage divider bias Basic BJT amplifier configuration: common emitter, common base and common collector amplifiers Transistor as a switch: cut-off and saturation modes High frequency model of BJT amplifier 3. Field Effect Transistor (FET) Enhancement-type MOSFET: structure and physical operation, current-voltage characteristics Depletion-type MOSFET D.C. operation of MOSFET circuits MOSFET as an amplifier Biasing in MOSFET amplifiers Basic MOSFET amplifier configuration: common source, common gate and common drain types High frequency model of MOSFET amplifier Junction Field-Effect Transistor (JFET) 4. Operation Amplifier (Op-amps) Ideal Op-amp Differential amplifier: differential and common mode operation common mode rejection ratio (CMRR) Practical op-amp circuits: inverting amplifier, non -inverting amplifier, weight ed summer, integrator, differentiator Large signal operation of op-amps Other applications of op-amps: instrumentation circuits, active filters, controlled sources, logarithmic amplifiers, waveform generators, Schmitt triggers, comparators 5. Power Circuits and Systems Class A large signal amplifiers, second-harmonic distortion Transformer coupled audio power amplifier Class B amplifier Class AB operation Power BJTs Regulated power supplies Series voltage regulator Four layer diodes: p-n-p-n characteristicsJTs Regulated power supplies Series voltage regulator Four layer diodes: p-n-p-n characteristics comparators 5. Power Circuits and Systems Class A large signal amplifiers, second-harmonic distortion Transformer coupled audio power amplifier Class B amplifier Class AB operation Power BJTs Regulated power supplies Series voltage regulator Four layer diodes: p-n-p-n characteristicsde rejection ratio (CMRR) Practical op-amp circuits: inverting amplifier, non -inverting amplifier, weight ed summer, integrator, differentiator Large signal operation of op-amps Other applications of op-amps: instrumentation circuits, active filters, controlled sources, logarithmic amplifiers, waveform generators, Schmitt triggers, comparators

5. Power Circuits and Systems Class A large signal amplifiers, second-harmonic distortion Transformer coupled audio power amplifier Class B amplifier Class AB operation Power BJTs Regulated power supplies Series voltage regulator Four layer diodes: p-n-p-n characteristicson Amplifier (Op-amps) Ideal Op-amp Differential amplifier: differential and common mode operation common mode rejection ratio (CMRR) Practical op-amp circuits: inverting amplifier, non -inverting amplifier, weight ed summer, integrator, differentiator Large signal operation of op-amps Other applications of op-amps: instrumentation circuits, active filters, controlled sources, logarithmic amplifiers, waveform generators, Schmitt triggers, comparators 5. Power Circuits and Systems Class A large signal amplifiers, second-harmonic distortion Transformer coupled audio power amplifier Class B amplifier Class AB operation Power BJTs Regulated power supplies Series voltage regulator Four layer diodes: p-n-p-n characteristics 2 4pr ? sin? ? ? ? ? ? ? (11.20) For orthogonal incidence one obtains the following from Equation (11.20) s = 4p 3r4 ?2 = G AW (11.21) Where Aw = surface of the disk and the disk is assumed to be infinitesimally thi n. A disk with a diameter of 1 m has a Radar backscattering cross-section of 8610 m2 with a fre quency of 10 GHz. 11.5.3 Arbitrary Flat Disk Again underA wavelet is a wave-like oscillation with an amplitude that begins at zero, increases, and then decreases back to zero. It can typically be visualize d as a "brief oscillation" like one might see recorded by a seismograph or heart monitor. Generally, wavelets are purposefully crafted to have specific properti es that make them useful for signal processing. Wavelets can be combined, using a "reverse, shift, multiply and integrate" technique called convolution, with po rtions of a known signal to extract information from the unknown signal. Seismic Wavelet

For example, a wavelet could be created to have a frequency of Middle C and a sh ort duration of roughly a 32nd note. If this wavelet was to be convolved with a signal created from the recording of a song, then the resulting signal would be useful for determining when the Middle C note was being played in the song. Math ematically, the wavelet will correlate with the signal if the unknown signal con tains information of similar frequency. This concept of correlation is at the co re of many practical applications of wavelet theory.As a mathematical tool, wave lets can be used to extract information from many different kinds of data, inclu ding but certainly not limited to audio signals and images. Sets of wavelets are generally needed to analyze data fully. A set of "complementary" wavelets will decompose data without gaps or overlap so that the decomposition process is math ematically reversible. Thus, sets of complementary wavelets are useful in wavele t based compression/decompression algorithms where it is desirable to recover th e original information with minimal loss.In formal terms, this representation is a wavelet series representation of a square-integrable function with respect to either a complete, orthonormal set of basis functions, or an overcomplete set o r frame of a vector space, for the Hilbert space of square integrable functions. Wavelet transforms A wavelet is a mathematical function used to divide a given function or continuo us-time signal into different scale components. Usually one can assign a frequen cy range to each scale component. Each scale component can then be studied with a resolution that matches its scale. A wavelet transform is the representation o f a function by wavelets. The wavelets are scaled and translated copies (known a s "daughter wavelets") of a finite-length or fast-decaying oscillating waveform (known as the "mother wavelet"). Wavelet transforms have advantages over traditi onal Fourier transforms for representing functions that have discontinuities and sharp peaks, and for accurately deconstructing and reconstructing finite, non-p eriodic and/or non-stationary signals.Wavelet transforms are classified into dis crete wavelet transforms (DWTs) and continuous wavelet transforms (CWTs). Note t hat both DWT and CWT are continuous-time (analog) transforms. They can be used t o represent continuous-time (analog) signals. CWTs operate over every possible s cale and translation whereas DWTs use a specific subset of scale and translation values or representation grid. Contourlets form a multiresolution directional tight frame designed to efficient ly approximate images made of smooth regions separated by smooth boundaries. The Contourlet transform has a fast implementation based on a Laplacian Pyramid dec omposition followed by directional filterbanks applied on each bandpass sub Contourlet Transform A filter bank structure that can deal effectively with piecewise smooth images w ith smooth contours, was proposed by Minh N Do and Martin Vetterli. The resultin g image expansion is a directional multiresolution analysis framework composed o f contour segments, and thus is named contourlet. This will overcome the challen ges of wavelet and curvelet transform. Contourlet transform is a double filter b ank structure. It is implemented by the pyramidal directional filter bank (PDFB) which decomposes images into directional subbands at multiple scales. In terms of structure the contourlet transform is a cascade of a Laplacian Pyramid and a directional filter bank. In essence, it first use a wavelet-like transform for e dge detection, and then a local directional transform for contour segment detect ion. The contourlet transform provides a sparse representation for two-dimension al piecewise smooth signals that resemble images Abstract A new steganography method based on the contourlet transform is proposed in this paper. This strategy is based on storing information in high frequency sub-band s of contourlet transform. The embedding approach is in direction that the conto urlet sub-bands have the least statistical disorder. As a result, the proposed a lgorithm has a higher robustness against to common steganalysis approaches. In a ddition, the quality of stegano image has considerably improved in comparison wi th related state of the art methods, with the extracted secret image having an acceptable quality. Furthermore, the experimental results show robustness respec

t to Gaussian noise and other attacks such as JPEG compression. frequency ranges is 3-17 GHz). 11.5.2 Circular Disks Through the integration over the circular area (according to Figure 11.10) resul ts the calculation of the Radar backscattering cross-section of a circular disk with r >> ? , just as in antenna technology for homogenous arrangement. Figure 11.10 Geometry for calculating the Radar backscattering cross-section (Au fpunkt = emission point). s ? r'= 0 r? d ? = 0 2p ? df d = f (r',?,?), ? = aspect angle (11.19) Radar System Engineering Chapter 10 Characteristics of Radar Targets 103 The result of the integration reads: s = r2p cos2?J1 2 4pr ? sin? ? ? ? ? ? ? (11.20) For orthogonal incidence one obtains the following from Equation (11.20) s = 4p 3r4 ?2 = G AW (11.21) Where Aw = surface of the disk and the disk is assumed to be infinitesimally thi n. A disk with a diameter of 1 m has a Radar backscattering cross-section of 8610 m2 with a fre quency of 10 GHz. 11.5.3 Arbitrary Flat Disk Again under