INTRODUCTION - Chapter 1 in the Text

Introduction - Chapter 1!

This course is basically about silicon chip fabrication, the technologies used to manufacture ICs. We will place a special emphasis on computer simulation tools to help understand these processes and as design tools. These simulation tools are more sophisticated in some technology areas than in others, but in all areas they have made tremendous progress in recent years.

1960 and 2000 integrated circuits. Progress due to: Feature size reduction - 0.7X/2 years (Moores Law). Increasing chip size - ! 16% per year. Creativity in implementing functions.
SILICON VLSI TECHNOLOGY Fundamentals, Practice and Modeling By Plummer, Deal & Griffin 1 ! 2000 by Prentice Hall Upper Saddle River NJ

Feature Size! 100m! 10m! 1m! 0.1m! 10nm! 1nm! 0.1nm!

Device Scaling Over Time!

Era of Simple Scaling!

Introduction - Chapter 1!

Cell dimensions!

Scaling + Innovation! ITRS! Invention!

Transition Region! Quantum Effects Dominate! Atomic Dimensions! 1960! 1980! 2000! 2020! 2040!
Atomic dimensions!

The era of easy scaling is over. We are now in a period where! technology and device innovations are required. Beyond 2020, new! currently unknown inventions will likely be required.!
SILICON VLSI TECHNOLOGY Fundamentals, Practice and Modeling By Plummer, Deal & Griffin 2 ! 2000 by Prentice Hall Upper Saddle River NJ

ITRS - 2003 version!

Year of Production
Technology Node (half pitch) MPU Printed Gate Length DRAM Bits/Chip (Sampling) MPU Transistors/Chip (x106) Min Supply Voltage (volts )

Introduction - Chapter 1!

1998

2000

2002

2004

2007

2010
45 nm 25 nm 32G 2200

2013
32 nm 18 nm 64G 4400

2016
22 nm 13 nm 128G 8800

2018
18 nm 10 nm 128G 14,000

250 nm 180 nm 130 nm 100 nm 256M 512M 70 nm 1G

90 nm 65 nm 53 nm 35 nm 4G 550 16G 1100

1.8-2.5 1.5-1.8 1.2-1.5 0.9-1.2 0.8-1.1 0.7-1-0

06-0.9 0.5-0.8 0.5-0.7

Recent versions (2011) drop 3 year cycle - continuous scaling.!

ITRS at http://www.itrs.net/Links/2011ITRS/Home2011.htm 2011 version also posted on class website. SILICON VLSI TECHNOLOGY
Fundamentals, Practice and Modeling By Plummer, Deal & Griffin 3 ! 2000 by Prentice Hall Upper Saddle River NJ

Introduction - Chapter 1!

Assumes CMOS technology dominates over entire roadmap.

1990 IBM demo of scale lithography. Technology appears to be capable of making structures much smaller than currently known device limits.
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Historical Perspective

Introduction - Chapter 1!

Invention of the bipolar transistor - 1947, Bell Labs. Shockleys creative failure methodology

N P N

N P N

Grown junction transistor technology of the 1950s

N P N N P N

SILICON VLSI TECHNOLOGY Fundamentals, Practice and Modeling By Plummer, Deal & Griffin

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Introduction - Chapter 1!
In

In

Alloy junction technology of the 1950s.

P N

P N

P N

Double diffused transistor technology of the 1950s.

N

P N
N P N

SILICON VLSI TECHNOLOGY Fundamentals, Practice and Modeling By Plummer, Deal & Griffin

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Introduction - Chapter 1!
Si O2 N P N

N
P N

The planar process (Hoerni Fairchild, late 1950s). First passivated junctions.

Light Mask

Photoresist Deposited Film Substrate Film deposition Etch mask Photoresist application Exposure

Basic lithography process which is central to todays chip fabrication.

Development

Etching

Resist removal

SILICON VLSI TECHNOLOGY Fundamentals, Practice and Modeling By Plummer, Deal & Griffin

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Introduction - Chapter 1!

Lithographic process allows integration of multiple devices side by side on a wafer.

P+

P+

N+

N+

Schematic cross-section of a modern silicon IC.

N Well

P Well

SILICON VLSI TECHNOLOGY Fundamentals, Practice and Modeling By Plummer, Deal & Griffin

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Introduction - Chapter 1!

Actual cross-section of a modern chip. Note the multiple levels of metal and planarization. (M. Bohr, Intel, ISSCC 2009).

MOS Transistor Switches

Control Control Resistor (present in BJT circuits) Input Output Output

I ! (control signal)n n ! 1-2

SILICON VLSI TECHNOLOGY Circuits Fundamentals, Practice and Modeling By Plummer, Deal & Griffin

Digital

Analog Circuits
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Introduction - Chapter 1!

Control (Gate) Input (Source) -VG N+ h+ P P Output (Drain) +VD N+ +VG

+VD N+ N+ e-

++VG

+VD N+

N+

Accumulation

Depletion

Inversion

Computer Simulation Tools (TCAD)

Most of the basic technologies in silicon chip manufacturing can now be simulated. Simulation is used for: Designing new processes and devices. Exploring the limits of semiconductor devices and technology (R&D). Centering manufacturing processes. Solving manufacturing problems (what-if?)
SILICON VLSI TECHNOLOGY Fundamentals, Practice and Modeling By Plummer, Deal & Griffin 10 ! 2000 by Prentice Hall Upper Saddle River NJ

Introduction - Chapter 1!

SILICON VLSI TECHNOLOGY Fundamentals, Practice and Modeling By Plummer, Deal & Griffin

2000 by Prentice Hall Upper Saddle River NJ

Challenges For The Future

Introduction - Chapter 1!

Having a roadmap suggests that the future is well defined and there are few challenges to making it happen. The truth is that there are enormous technical hurdles to actually achieving the forecasts of the roadmap. Scaling is no longer enough. 3 stages for future development: Technology Performance Boosters
Silicide Sidewall Spacer Poly Gate Silicide Source S/D Ext Rchan S/D Ext Drain

Invention

Gate

Gate Dielectric

Source

Drain

???

Substrate

Spin-based devices Molecular devices Rapid single flux quantum Quantum cellular automata Resonant tunneling devices Single electron devices

Materials/process innovations NOW

SILICON VLSI TECHNOLOGY Fundamentals, Practice and Modeling By Plummer, Deal & Griffin

Beyond Si CMOS IN 10+ YEARS?? Device innovation NEXT 10+ YEARS

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Materials/Process Innovation

Introduction - Chapter 1!

Strain introduced into channel region to enhance electron and hole mobility. (M. Bohr, Intel, ISSCC 2009).

High-k dielectrics (hafnium based) introduced to allow thicker gate dielectrics. (M. Bohr, Intel, ISSCC 2009).

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Device Innovation - Next 5 - 10 Years

Introduction - Chapter 1!

3D transistor structures ! provide multiple gates, ! better channel control!

(M. Bohr, Intel, ISSCC 2009).

Gate Pd
8nm HfO2 CNT SiO2

Pd

p++ Si
Javey, et al., Nano Letters, 4, 1319, 2004 Prof. C. Zhou (USC)!

Since their discovery 15 years ago, a huge international effort ! has focused on developing the technology to use these materials.! Can we learn how to control their growth and placement?!
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Intel 2011 Announcement

Introduction - Chapter 1!

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Intel 2011 Announcement

Introduction - Chapter 1!

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Introduction - Chapter 1!

Pathways To The Future!

(Luc Van den hove - IMEC)!

For the rst 35 years of silicon chip history only a few elements on the! periodic table were used (O, Si, As, P, B, Al, Cu). ! ! Today, half the periodic table is being explored.!
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Introduction - Chapter 1!

Si Technology - More Than Logic Chips?!

2007 ITRS!

ITRS now denes new opportunities - CMOS + something else.!

SILICON VLSI TECHNOLOGY Fundamentals, Practice and Modeling By Plummer, Deal & Griffin 18 ! 2000 by Prentice Hall Upper Saddle River NJ

Summary of Key Ideas

Introduction - Chapter 1!

For 50 years (1960 - present), technology scaling was relatively easy, although it didnt seem that way at the time! The next 10+ years will be a lot harder and more interesting. What do we do when optical lithography ends? What is the ultimate form of the MOS transistor? Can 3D be used as a pathway to increased density? Is there a new switch beyond the MOSFET? Silicon technology has become a basic toolset for many areas of science and engineering. Consolidation will continue in the industry. What new business models will evolve beyond IDMs, foundries and fabless design companies? Chapter 1 also contains some review information on semiconductor materials and semiconductor devices.
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