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DF005M - DF10M
Features
Surge overload rating: 50 amperes peak. Glass passivated junction. Low leakage. UL certified, UL #E111753.
DIP
Bridge Rectifiers
Absolute Maximum Ratings*
Symbol
VRRM VRMS VR IF(AV) IFSM Tstg TJ
TA = 25C unless otherwise noted
Parameter
005M Maximum Repetitive Reverse Voltage Maximum RMS Bridge Input Voltage DC Reverse Voltage (Rated VR) Average Rectified Forward Current, @ TA = 40C Non-repetitive Peak Forward Surge Current 8.3 ms Single Half-Sine-Wave Storage Temperature Range Operating Junction Temperature 50 35 50 01M 100 70 100 02M 200 140 200
Value
04M 400 280 400 1.5 50 -55 to +150 -55 to +150 06M 600 420 600 08M 800 560 800 10M 1000 700 1000
Units
V V V A A C C
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics
Symbol
PD RJA
Parameter
Power Dissipation Thermal Resistance, Junction to Ambient,* per leg
Value
3.1 40
Units
W C/W
Electrical Characteristics
Symbol
VF IR
Parameter
Forward Voltage, per bridge @ 1.0 A Reverse Current, total bridge @ rated VR TA = 25C TA = 125C I2t rating for fusing t < 8.35 ms Total Capacitance, per leg VR = 4.0 V, f = 1.0 MHz
Device
1.1 5.0 500 10 25
Units
V A A A2s pF
CT
DF005M-DF10M, Rev. C
DF005M - DF10M
Bridge Rectifiers
(continued)
Typical Characteristics
50
1.5
40
30
20
0.5
10
50
100
0 20
40
140
160
10
10
T A = 100 C
0.1
TA = 25 C Pulse Width = 200s
0.1
TA = 25 C
0.01 0.4
0.6
1.4
0.01
DF005M-DF10M, Rev. C
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This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. H4
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