National Institute of Astrophysics, Optics and Electronics

Berni Manolo Perez Ramos

High re!uency "apacitance Measurements of p#i$%&&' and p#i$%%%' MO# "apacitors

HF Capacitance Curves, Sample I, pSi<100>,Process 2
-10

HF Capacitance Curves, Sample I, pSi<100>,Process 2

2.0x10

1.0
COX= 207 [pF]

C/Cox

1.5x10
Capac !a"c# [F]

-10

0.8 0.6
C/Cox

1.0x10

-10

5.0x10

-11

0.0 -6

%4 C4 &4 %3 %5 B2 F7 B7 F3 -4 -2 0 V$ [V] 2 4 6

0.4
VFB= -0.7 [V]

0.2 0.0 -6 -4 -2

CFB= 54.48 [pF]

CMIN= 25 [pF]

0
VG [V]

The above curves correspond to the C/V measurements of pSi<100> MOS capacitors. (he lat Band )oltage, as indicated, is a*out +&,-. and the lat Band "apacitance is /0,01 2p 3, The devices have an area of 13. !10" cm#$ an o!ide thic%ness of #0&0.' nm and ()uminum as *ate e)ectrode.
HF Capacitance Curves, Sample II, pSi<111>,Process 2 HF Capacitance Curves, Sample II, pSi<111>,Process 2
-10

1.8x10 1.5x10 1.2x10

Capac !a"c# [F]

1.0
-10

COX= 163 [pF]

C/Cox

0.8
-10

9.0x10 6.0x10 3.0x10

-11

-11

-11

&5 F5 %5 %4 %6 '5 (5 (1 (7 -4 -2 0
VG [V]

0.6
C/Cox
CMIN= 95 [pF]

0.4
VFB= -1.6 [V]

0.2 0.0 2 4 6 -6

CFB= 43 [pF]

0.0 -6

-4

-2

0
VG [V]

These )ast t+o fi*ures are the C/V measurements of pSi<111> MOS capacitors. The structure of the devices remains the same$ and the ,)at -and Vo)ta*e and Capacitance are sho+n in the ri*ht *raph. These curves resemb)e a behavior simi)ar to that of a capacitor bein* heated$ that is$ the hi*h fre.uenc/ curves approach the behavior of a .uasi"static capacitance measurement. The )ater ma/ be due to the presence of a hi*h densit/ of interface"states$ that is e!pected for the <111> orientation$ +hich are in hi*h ener*/ )eve)s so that the/ are ab)e to respond to the hi*h fre.uenc/ si*na) of the measurement fi!ture. Then$ for both sets of curves the *raph in the )eft sho+s the obtained curves for different dices a)on* the substrates$ and the ri*ht one is the mean va)ue of the measurements. ()so$ the ,)at -and Vo)ta*e has been obtained from e!trapo)ation of the dep)etion re*ion to 0$ and b/ the second derivative of the 1/C # curve$ both methods sho+in* e!ce))ent a*reement.

,ina))/$ the 0et Char*e 1ensit/ 23T/.4$ +hich inc)udes the 0et ,i!ed Char*e 23f4$ the 0et O!ide Trapped Char*e 23ot4$ and the 0et Mobi)e 5onic Char*e 23 m4$ has been estimated to be 2ne*)ectin* the meta) and semiconductor 6or% ,unction 1ifference47 4( 5 6(7! 5 8,-9:%&%% cm+;, and 4( 5 6(7! 5 %,/0:%&%; cm+;, for p#i$%&&' and p#i$%%%' respecti<ely, -ottom )ine$ the o!ide .ua)it/ of the therma) o!idation of Si in the Microe)ectronics 8ab is$ in terms of the 1 T$ one order of ma*nitude )o+er than the parameters re.uired for MOS processes. The )atter ma/ be improved b/ c)eanin* thorou*h)/ the o!idation furnaces$ b/ carefu))/ app)/ the 1ee) Trian*)e conditions for o!idation and b/ usin* a different inert atmosphere$ )ets sa/ (r*on instead of 0itro*en$ +hich ma/ diffuse and react +ith *ro+in* Si)icon O!ide at such process temperatures.