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TIME :3 hrs
MAX MARKS :100
3. Stae the two parameters that describe a directional coupler. Define them
7. Draw the equivalent circuits of pin diode under (a0 Reverse bias and (b)
Forward bias
8. Which two phase angle make the voltage and current on A valanche transmit time
device to be out of phase by 180 degrees?
10 What are LOW VSWR and HIGH VSWR and name the method followed to measure HIGH
VSWR?
PART -B (5 X 16 =80)
OR
(b) A certain two -port microwave junction can be represented by the following
equivalent circuit. Determine the susceptance B and the turns ratio n of ideal
transformer if the measurements give S11= -(1 + j )/3 +j ,S22 = 1-j/3 +j
13(a) (i) From the first principle ,derive the scatttering matrix of an ideal
directional coupler. Hence or otherwise write down [s] matrix of HYBRID COUPLER
and MAGIC - T
(ii) Explain how the inductances and capacitances can be varied using IRESES and
SCREWS (posts)
(b) Derive 'HULL CUT OFF' condition and 'HARTEE' condition of a cavity type
mgnetron
(ii) Use the above relations to find the poer gain of an UP CONVERTER and a DOWN
CONVERTER
OR
(b) Write in detail the principle mechanism of operation and the application of
IMPATT diode.
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B.E./B.TECH.DEGREE EXAMINATION MAY/JUNE 2006
VII -SEMESTER
MICROWAVE ENGINEERING
TIME :3 hrs
MAX MARKS :100
2. Express S11 of two port microwave component in terms of its equivalent ABCD
parameters
6. Write down two important difference between TWT and multi cavity klysron
7.Name two important materials that are used in Schottky -barrier diode.
8. Mention two basic difference between IMPATT and BARITT in terms of biasing and
NOISE
10. Write down the relationship of uide wavelength ,cut off wavelength and free
space wavelength of a waveguide.
PART -B (5 X 16 = 80)
11.(i) Name three different types of devices that are used to detect microwave
piwer.
(iii) How do you measure the micowave frequency without frequncy meter?
12 (b) (i) Obtain the ABCD parameters of a series impedance Z ohms from the first
priciple.
(ii) An ideal transformer has 1000 turns on its primary and 100 turns on its
secondry side. Assuming that it has a 50 ohms connectot on each side ,determine
its scaterring parameters.
13 (a) (i) Is it possible to match all the oorts of alossless reciprocal microwave
component ? Prove the same.
(ii) Determine the scatering matrix of a crossing between two lines having
charecteristic impedence of 50 ohms and 100 ohms
14 (a) (i) Draw any four types of SLOW WAVE STRUCTES used in TWT.
OR
(b) A two cavity klystron operates at 4.5 GHz . The DC beam voltage is 10 KV,
cavity gap spacing is 2 mm . For a given input, the magnitude of the gap voltage
is 100 volts , the DC component Io = 3.6 A and the drift regeion l= 3 cm .
Calculate (i) the item the electrons are in the gap 9ii0 the transit angle (iii )
the range of velocities of eletrons as they leave the gap reageion (iv) the
maximum voltage gain.
15 (a) (i) Draw the equivalent circuit of schottky diode and write down its
properties
(ii) Draw the equivalent circuit of pin diode and show how it can be used as a
TRANSMISSION TYPE SWITCHED LINE PHASE SHIFTER and as a SERIES SWITCH
OR
(b) (i) Pictorially represent the charecteristics (viz eletric field distribution
,the microwave voltage and the external current flow) of differnt regeions of the
IMPATT diode under reverse biased condition . Write down its typical
charecteristics.
(ii) Give the voltage current wavefrom with respect to time of a TRAPATT diode and
write down its charecteristics
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A 1201
B.E./B.Tech. DEGREE EXAMINATION, MAY/JUNE 2007.
Seventh Semester
Electronics and Communication Engineering
EC 432 � MICROWAVE ENGINEERING
Time : Three hours
Maximum : 100 marks
(b) (i) What is scattering matrix? Derive scattering matrix formulation for
�n� port network. _ (10)
(ii) Relate Z,Y and ABCD parameters with �S� parameters. (6)
12. (a) (i) � Derive the �S� matrix for Magic Tee. (10)
� (ii) Explain with diagrams Waveguide corners, bends and twists. (6)
Or
(b) (i) What is an isolator? Write down its �S� parameters. (4)
(ii) From the first principle derive the scattering matrix parameters of
a directional coupler. (12)
13. (a) (i) Draw a neat sketch showing ahelix type traveling wave tube and
describe the mechanism of electron bunching. (11)
(ii) How does a TWT differ from a Klystron amplifier? (3)
(iii) How are the oscillations that are spontaneously generated in a
TWT suppressed? (2)
Or
(b) (i) What is meant by velocity modulation? � (2)
(ii) Explain the operation of a two cavity klystron amplifier. Derive
expressions for bunched beam current and efficiency. (14)
14. (a) Derive the Manley Rowe power relation. Show how it can be applied to
find the gain of up converter and down converter. (16)
Or
(b) Write short notes on
(i) GUNN Diode (8)
(ii) IMPATT device _ (8)
15. (a) With neat block diagram explain how a Network Analyser can be used to
measure the amplitude and phase of a signal over a wide frequency
range. Also explain the measurement of reflection and transmission
parameters and �S� parameters. (16)
Or
' 2 A 1201
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B.E./B.TECH.DEGREE EXAMINATION, NOV/DEC 2006
VII-SEMESTER
MICROWAVE ENGINERING
TIME : 3 HRS
MAX MARKS : 100
3. What should be the minimum radius of curvature for E plane bend and H plane
bend? Validate your answer.
4. When can you say that termination is matched to a system ? Give the structure
of any such termination and state the significance of that structure
5. What are the slow wave structures ? Why and where are they used?
10 What are the measurement that can be performed using (a) spectrum analyser (b)
Network analyser?
PART -B (5 X 16 = 80 )
(ii) Explain how power splitting occurs in (i) E plane tee (ii) H plane tee (iii)
magic tee
OR
(b) (i) Define coupling factor and dirictivity of a directional coupler . Give
significance of these terms.
(ii) Explain the coupling mechanism in a Bethe -hole directional coupler and two
hole directional coupler.
14 (a) With the help of energy band diagrams explain the working of a tunnel
diode.
OR
(b) With mathematical substantiation expalin the velocity modulation and bunching
process in a reflex klstron.
(ii) Explain the frequency measurement technique using (i) slotted line (ii)
resonant cavities
11. (a) (i) What is a hybrids ring. With the help of a neat diagram explain its
working principle.
(ii) Derive scattering matrix of E-plane Tee using S-parameters theory.
OR
(b) (i) What are the advantages of S-parameters over �Z� or �Y� parameters.
(ii) What is the directivity of an ideal directional coupler? Why.
(iii) From the first principles derive the scattering matrix of an ideal
directional coupler.
12. (a) (i) Explain the constructional details and operation of GaAs MESFET with
neat diagrams and characteristics curves.
OR
(b) (i) What are avalanche transit time devices.
(ii) With a neat diagram explain the construction and operating principle of
IMPACT diode.
14. (a) (i) Explain in detail with suitable diagrams the fabrication techniques of
a monolithic microwave integrated circuit.
OR
(b) Explain in detail the various types of planar transmission lines with
appropriate diagrams.
15. (a) Describe in detail with block diagram the measurement of VSWR through
return loss measurement.
OR
(b) Explain in detail the measurement of load impedance through slotted line
method.
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Time : 3 Hrs
Max Marks : 100
PART A (10 X 2 = 20 )
PART - B ( 5 X 16 =80)
11 (a) (i) What is a hybrid ring ? With the help of a neat diagram explain its
working principle.
(b) (i) What are the advantages of S-parameters over 'Z' or 'Y' parameters.
(iii) From the first principles derive the scattwering matrix of an ideal
directional coupler?
OR
(ii) With neat diagrams explain the construction and operating priciple of IMPATT
diode.
(b) (i) Describe with the neat sketch the constructional details and principles of
operation of a Reflex Klystron tube .With the help of Applegate diagram illustrate
the phenomenon of bunching.
OR
(b) Explain in detail the various types of planer transmission lines with
appropriate diagrams.
15 (a) Describe in detail with block diagram the measurement of VSWR through
return loss measurements.
OR
(b) Explain in detail the measurements oF load impedeance through slotted line
method.
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