This document contains 24 multiple choice questions about solid state devices and semiconductors. The questions cover topics such as common base amplifiers, full wave rectifiers, transistor operation, p-n junction diodes, resistance with temperature, depletion layers, and transistor circuits.
This document contains 24 multiple choice questions about solid state devices and semiconductors. The questions cover topics such as common base amplifiers, full wave rectifiers, transistor operation, p-n junction diodes, resistance with temperature, depletion layers, and transistor circuits.
This document contains 24 multiple choice questions about solid state devices and semiconductors. The questions cover topics such as common base amplifiers, full wave rectifiers, transistor operation, p-n junction diodes, resistance with temperature, depletion layers, and transistor circuits.
Page 1 1 ) In a common base output voltage is amplifier, the phase difference between the Input signal voltage and (a) 11: (b) 'It:/ 4 (c) (d) zero 2 ) In a full wave rectifier, circuit operating from 50 Hz mains frequency, frequency in the ripple would be (a) 25 Hz ( b I 50 Hz ( c I 70.7 Hz ( d I 100 Hz 3 ) When npn transistor is used as an amplifier ( a ) electrons move from base to collector ( c ) electrons move from collector to base [ AIEEE 2005 } 2005} 4) For a transistor amplifier in common emitter impedance of 1 M ( ht = 50 and h.,., = 25 IJA IV ), the current gain i , '!{J (a} -5.2 (b) -15.7 (c) -24.8 (d) 48.7. { AIEEE 2004 I 5) temperature to 80 K. ( a ) each of these increases ( b ) h o se decreases ( c ) copper strip increases and that aniUm decreases The resistance of ( d ) copper strip decreases and o nlum increases [ AIEEE 2004, 2003 I 6 I The lids is due to ( a ) Heisenberg's uncertain ( c ) Bohr's correspondenc ( b ) Pauli's exclusion principle ( d ) Boltzmann's law 7 ) When p-n junction (a I ( b I (c) both the (d) both and barrier eight is Increased widened and barrier height is reduced nJiriogicn and barrier height are reduced region and barrier height are Increased I AIEEE 2004 I I AIEEE 2004 I 8 I The variation of resistance with temperature in a metal and a rises essentially due to the difference in bonding ( b 1 crystal structure g mechanism with temperature ( d } no. of charge carriers with temp. I AIEEE 2003 I middle of the depletion layer of a reverse biased p-n junction, the the potential is zero ( b ) electric field is zero potential is maximum ( d ) electric field is maximum 1 AlE EE 2003 1 10) In a p-n junction, the depletion layer consists of ( a ) electrons ( b ) protons ( c ) mobile ions ( d 1 immobile ions 11 ) In forward bias, the width of otential barrier in p-n )unction diode ( a 1 increases ( b ) decreases ( c ) remans constant ( d ) first increases, then decreases [ AIEEE 2002 I [ AIEEE 2002 } 24 - SOLIDS AND SEMI-CONDUCTOR DEVICES (Answers at the end of all questions} 12 1 When a potential difference is applied across, the current passing through, ( a 1 an insulator at 0 K is zero ( b 1 a semiconductor at 0 K Is zero ( c 1 a metal at 0 K is finite ( d 1 a p-n diode at 300 K is finite if it is reverse biased 13 1 A transistor is used in common emitter mode as ( a 1 the base emitter junction is forward biased ( b 1 the base emitter junction is reverse biased ( c 1 the Input signal is connected In series with the emitter junction ( d } the input signal is connected in series with connector junction 14 1 In a p-n junction diode not connected to any Page 2 9991 the base (a I ( b I ( c I side to the p-type ( d I from the p-type side to the n-type (liT 1998] 15 1 Which of the I liT 1997 I 16) ( b 1 ionic solids [liT 1996] 17 the output is shown in the figure. The v t (b) A, C I c I B, 0 ( d} A, B, C, 0 [liT 19961 18 1 Read the following statements carefully: Y : The resistivity of a semiconductor decreases with increase of temperature Z : In a conducting solid, the rate of collisions between free electrons and ions increases with increase of temperature ( a 1 Y is true but Z is false ( c 1 Both Y and Z are true ( b 1 Y is false but Z is true ( d 1 Y is true and Z is the correct reason for Y (liT 1993] 24 - SOLIDS AND SEMI-CONDUCTOR DEVICES (Answers at the end of all questions} Page 3 19 1 In an n-p-n transistor circuit, the collector current Is 10 mA. If 90% of the electrons emitted reach the collector (a 1 the emitter current wll be 9 mA (b) the emitter current will be 11 mA ( c 1 the base current will be 1 mA ( d 1 the base current will be -1 mA 20 } Two Identical p-n junctions may be connected in series with a battery in three ways as shown in the figure. The potential drops Circuit 1 across the two n-p junctions are equal in 1 + ( a 1 circuit 1 and circuit 2 ( b 1 circuIt 2 and cir i ( c 1 circuIt 3 and circuit 1 ( d 1 circuit 1 on I {liT 1989) 21 1 A piece of copper and another of from room temperature to so K. The resistance of ( a 1 each of them increases ( b ) decreases ( c 1 copper increases and germanium rea ( d 1 copper decreases and 1 eas s [liT 1988) 22 ) The impurity atoms with ilicon should be doped to make a p-type semiconductor are those of (a 1 phosphorous ( ( c 1 antimony 23 1 Select the correct state r the following: ( a 1 A diode can be a rectifier. ( c I aluminium [Ill 1988) ( b 1 A triode cannot as a rectifier. ( d 1 The linear I of the I - V characteristic of a triode is used for amplification witho t dist . [ Ill 1984 ) .. of a triode valve is 3 x 10 3 ohm and its mutual conductance is volt. The amplification factor of the triode is (b) 4.5 (c) 0.45 ( d I 2 X 10 6 1 111 1983, 1981 1 Answers