Chapter 5 Impedance matching and tuning

5.1 Matching with lumped elements

L-section matching networks using Smith chart
5.2 Single-stub tuning
shunt stub, series stub
5.3 Double-stub tuning
forbidden region
5.4 The quarter-wave transformer
frequency response
5.5 The theory of small reflections
single-section transformer, multi-section transformer
5.6 Binomial multisection matching transformers
5.7 Chebyshev multisection matching transformers
5.8 Taper lines
exponential taper, triangular taper
5.9 The Bode-Fano criterion
Γ-Bandwidth
5-1 微波電路講義
• Impedance matching concept
given ZL, design a matching network to have Γin=0 or selected value

matching
Zo Γin ΓL ZL
network

Zin (=Zo) ZL
Discussion
1. Matching network usually uses lossless components: L, C,
transmission line and transformer.
2. There are ∞ possible solutions for the matching circuit.
3. Properly use Smith chart to find the optimal design.
4. Factors for selecting matching circuit are complexity, bandwidth,
implementation and adjustability.

5-2 微波電路講義
5.1 Matching with lumped elements (2-element L-network)
• Smith chart solution

L
constant constant
G-circle R-circle

C
Z-plane
CW → add series L
(reduce series C)
CCW → add series C
(reduce series L)
Y-plane
CW → add shunt C
(reduce shunt L)
CCW → add shunt L
(reduce shunt C)

5-3 微波電路講義
 (explanation) constant R-circle → L or C in series
j1
L j2 (1)CW A → B :1 + j 0.5 + jx = 1 + j 2 → jx = j1.5 = jωL
j0.5 L : add an L in series
B 1
(2)CCW B → A :1 + j 2 + jx = 1 + j 0.5 → jx = − j1.5 =
A j ωC
: add a C in series, or reduce extra L
C 1
D (3)CCW C → D :1 − j 0.5 + jx = 1 − j 2 → jx = − j1.5 =
C j ωC
C
-j0.5 -jj2 : add a C in series
-j1 (4)CW D → C :1 − j 2 + jx = 1 − j 0.5 → jx = j1.5 = jωL
: add an L in series or reduce extra C

in Z-plane
CW → add a series L (or reduce series C)
CCW → add a series C (or reduce series L)
5-4 微波電路講義
 constant G-circle → L or C in shunt
-j1
L (1)CW A → B :1 − j 2 + jb = 1 − j 0.5 → jb = j1.5 = jωC
-j0.5
-j2 : add a C in shunt, or reduce shunt L
L
1
A B (2)CCW B → A :1 − j 0.5 + jb = 1 − j 2 → jb = − j1.5 =
j ωL
: add an L in shunt
D 1
C (3)CCW C → D :1 + j 2 + jb = 1 + j 0.5 → jb = − j1.5 =
j ωL
C
: add an L in shunt, or reduce shunt C
j2 C j0.5
j1 (4)CW D → C :1 + j 0.5 + jb = 1 + j 2 → jb = j1.5 = jωC
: add a C in shunt

in Y-plane
CW → add a shunt C (or reduce shunt L)
CCW → add a shunt L (or reduce shunt C)
5-5 微波電路講義
 Discussion
1. ZL inside 1+jx circle, two possible solutions
Smith chart solution (shunt-series elements)

1+jx A:
1+jb
B circle
circle Zo ZL
A
B:

series-shunt elements? Zo ZL
“N”
1
analytical solution Z o = jX +
1
jB +
jX R L + jX L
jB ZL ⇒ B > 0 → C ,B < 0 → L
X > 0 → L, X < 0 → C

5-6 微波電路講義
2. ZL outside 1+jx circle, two possible solutions
Smith chart solution (series-shunt elements)

1+jb 1+jx A
circle circle
B A Zo ZL

Zo ZL
shunt-series elements?
“Y”
analytical solution 1 1
= jB +
jX Zo R L + j( X + X L )
⇒ B > 0 → C ,B < 0 → L
jB ZL
X > 0 → L, X < 0 → C

5-7 微波電路講義
 3. Ex. 5.1 ZL=200-j100, Zo=100Ω, f=500MHz

1. zL=2-j1, yL=0.4+j0.2
Solution A
B 3 2. y=0.4+j0.5 → jb=j0.3 → jB=jωC=jb/Zo
C=b/Zoω =0.92pF
1
z=1-j1.2 → jx=j1.2 → jX=j ωL=jxZo
2
A L=xZo/ω =38.8nH
Solution B
3. y=0.4-j0.5 → jb=-j0.7→-jB=1/jωL=-jb/Zo
L=-Zo/ωb=46.1nH
L z=1+j1.2 → jx=-j1.2 → jX=1/jωC=-jxZo
A: C
C=-1/xZoω =2.61pF

frequency response (p.227, Fig.5.3(c))

B: C
L
5-8 微波電路講義
 4. Possible 3-element L-network

1+jx
circle

series ?
“Y” Zo ZL

1+jb
circle

Zo ZL

5-9 微波電路講義
 5. Possible 4-element L-network
shorter paths for a wider operational bandwidth

1+jx
circle

Zo ZL

1+jb
circle

Zo ZL

5-10 微波電路講義
6. Lumped elements (size<λ/10)
capacitor: chip capacitor, MIM capacitor (<25pF), interdigital
gap capacitor (<0.5pF), open stub(<0.1pF)
inductor: chip inductor, loop inductor, spiral inductor (<10nH)
resistor: chip resistor, planar resistor
All these lumped elements inherently have parasitic elements in the
microwave range.
(p.228, “point of interest”)

Size (mil) 0402 0603 0805 1206

A 39 62 78 125
B 24 38 39 62
B C C 8 12 20 23
D 20 31 49 62
D

1mil=0.001in=25um=1/40mm
A

5-11 微波電路講義
5.2 Single-stub tuning
• equivalent microstrip elements
a series C ---
a series L in series with a high impedance microstrip line
a shunt C in shunt with an open microstrip line
a shunt L in shunt with a short microstrip line
Zo 1
an open-circuited microstrip line Z in = ≡
j tan β l jω C
a short-circuited microstrip line Z in = jZ o tan β l ≡ j ω L

a high impedance microstrip line

βl βl
jZ o tan jZ o tan
2 2 jZ o β l
Z1 Z2
Zo, β ≡ Y3 j sin β l ≈
Zo
l
5-12 微波電路講義
 (derivation of high impedance line)
From p.185 Table 4.1
Zo, β ⎡A B ⎤ ⎡ cos β l jZ o sin β l ⎤
=⎢
⎢C
⎣
⎥
D ⎦ ⎣ jYo sin β l cos β l ⎥⎦
l
⎡ Z1 Z1 Z 2 ⎤
1 + Z + Z +
⎡ A B ⎤ ⎢⎢ Z 3 Z3 ⎥
1 2

βl βl ⎢C D ⎥ = ⎢ 1 ⎥
jZ o tan jZ o tan ⎣ ⎦ Z2 ⎥
2 2 ⎢ Z 1 + ⎥
⎣ 3 Z3 ⎦
Z1 Z2
1 Zo j sin β l
Z3 = = , Y3 =
Y3 j sin β l jYo sin β l j sin β l Zo
Zo
Z1
1+ = cos β l , Z1 = (cos β l − 1) Z 3
Z3
jZ o β l
high Zo,Y3→0 βl 1 βl
= −2 sin 2 × − jZ o = jZ o tan
2 βl βl 2
π 2 sin cos
β l << 2 2
2

5-13 微波電路講義
Discussion
1. Shunt stub Smith chart solution

yin = jb = jωC
d
G
Zo Zo ZL

Zo
y in = 1 − jb constant
l
Γ-circle
1
y in = − jb =
jω L G
d

Zo Zo ZL

Zo
y in = 1 + jb
l 5-14 微波電路講義
2. Series stub Smith chart solution

zin = 1 + jx
d
G
Zo Zo ZL

1
l zin = − jx =
Zo jωC

zin = 1 − jx
d G

Zo Zo ZL

l zin = jx = jωL
Zo
5-15 微波電路講義
 3. Ex. 5.2 ZL=60-j80, Zo=50Ω, f=2GHz, using a shunt short stub

3 1. zL=1.2-j1.6, yL=0.3+j0.4
G 4
l1 Solution A
B 2. y=1+j1.47 → d1=0.11λ
3. y=-j1.47 → l1=0.095λ, short stub
S.C.
A 1
Solution B
2 4. y=1-j1.47 → d2=0.26λ
5 5. y=j1.47 → l2=0.405λ, short stub
l2
d frequency response (p.231, Fig.5.5(c))
Solution A has a wider bandwidth.

l ZL

5-16 微波電路講義
 4. Ex. 5.3 ZL=100+j80, Zo=50Ω, f=2GHz, using series open stub

3 1. zL=2+j1.6
G 4 Solution A
2. z=1-j1.33 → d1=0.12λ
B 1 3. z=j1.33 → l1=0.397λ, open stub
O.C.
A Solution B
l2 4. z=1+j1.33 → d2=0.463λ
l1 2
5. z=-j1.33 → l2=0.103λ, open stub
5
frequency response (p.234, Fig.5.6(c))
It can not be implemented in
microstrip lines.

5-17 微波電路講義
 5. Analytical solution for shunt stub

Y in = − jB d

Zo ZL

Y in = Y o + jB
l

⎧⎪⎛ Z L + jZ o tan β d ⎞ −1 ⎫⎪
Yo = Re ⎨⎜ Z o ⎟ ⎬ → d
Z + jZ β d
⎩⎪⎝ ⎠ ⎪⎭
o L tan

⎧ ⎛ Z o ⎞ −1
⎪
⎧⎪⎛ Z L + jZ o tan β l ⎞ −1 ⎫⎪ ⎪ ⎝⎜ tan β l ⎠⎟
open stub
− B = − Im ⎨⎜ Z o ⎟ ⎬=⎨ → l
⎪⎩⎝ Z o + jZ L tan β l ⎠ ⎪⎭ ⎪⎛ 1 ⎞
−1

−
⎪⎜ Z o tan β l ⎟ short stub
⎩⎝ ⎠
5-18 微波電路講義
6. Analytical solution for series stub

Z in = Z o + jX
d
Zo ZL

l Z in = − jX

⎧ Z L + jZ o tan β d ⎫
Z o = Re ⎨ Z o ⎬ → d
⎩ Z o + jZ L tan β d ⎭
⎧ Zo
⎧ Z L + jZ o tan β l ⎫ ⎪ - open stub
− X = − Im ⎨ Z o ⎬ = ⎨ tan β l → l
⎩ Z o + jZ L tan β l ⎭ ⎪ Z o tan β l short stub
⎩

5-19 微波電路講義
5.3 Double-stub tuning

4, 5
1±jb 2, 3 1
1
λ/8 G 5

Zo ZL
2
l2 l1 4
forbidden region
3
Discussion
1. There exists a forbidden region for ZL. It can be tuned out by
adding a certain length of line.

5-20 微波電路講義
 2. Ex. 5.4 ZL=60-j80, Zo=50Ω, f=2GHz, using double-shunt-
open-stubs
l1’ 1. zL=1.2-j1.6, yL=0.3+j0.4
7 Solution A
G 6 2. y=0.3+j 0.286 → 6. b1’ = - 0.114
l2’ → l1’ = 0.482λ
5
4. y=1+j1.38 → 7. b2’ = - 1.38
O.C. → l2’ =0.35λ
B A 2 Solution B
4
1 3. y=0.3+j1.714 → 8. b1 =1.314
3 → l1 =0.146λ
9 l1 5. y=1-j3.38 → 9. b2 = 3.38
l2 8 → l2 =0.204λ
λ/8
frequency response (p.239, Fig.5.9(c))
l2 l1
ZL
5-21 微波電路講義
3. Analytical solution

Y2 = Yo - jB2 Y1

Zo d

Zo ZL

l2 l1 jB1
jB2
−1
⎛ Z + jZ o tan β d ⎞
Y1 = YL + jB1 , Y2 = Yo − jB 2 = ⎜⎜ Z o 1 ⎟⎟
⎝ Z o + jZ 1 tan β d ⎠
Re {Y2 } = Yo → B1 → l1
Y1 → Im {Y2 } = − B 2 → l 2

5-22 微波電路講義
5.4 The quarter-wave transformer
|Γ| ZL/ Z0=10
• frequency response
Δθ
| Γm |
l
ZL/ Z0=2

Zo Γ Z1 ZL
(real)
θm θo π-θm θ
Γm: max. tolerated Γover the
Z1 = ZoZL bandwidth
ZL − Zo π
Γ (θ ) ≈ cos θ , for θ near θ o = , θ = βl
2 ZoZ L 2

Δf 4 Γm 2 ZoZ L
= 2 − cos − 1 ( ), Z L → Z o , Δ f increases
fo π 1− Γm ZL − Zo
2

5-23 微波電路講義
 ZL − Zo
(derivation of Γ (θ) ≈ cos θ )
2 ZoZL
ZL + jZ 1 tan θ
Z1 − Zo
Z in ( θ ) − Z o Z1 + jZ L tan θ Z 1 Z L + jZ 12 tan θ − Z o Z 1 − jZ L Z o tan θ
Γ (θ ) = = =
Z in ( θ ) + Z o Z + jZ 1 tan θ Z 1 Z L + jZ 12 tan θ + Z o Z 1 + jZ L Z o tan θ
Z1 L + Zo
Z1 + jZ L tan θ
Z 12 = Z o Z L
Z1 (Z L − Z o ) ZL − Zo 1
= = =
Z 1 ( Z L + Z o ) + j 2 Z 12 tan θ Z L + Z o + j 2 Z o Z L tan θ ZL + Zo j2 ZoZ L
+ tan θ
ZL − Zo ZL − Zo
π
θ→ θo =
2 ZL − Zo
≈ cos θ
j2 ZoZ L
Δf 4 Γm 2 ZoZL
(derivation of = 2 − cos − 1 ( ))
fo π 1− Γm ZL − Zo
2

1 1
Γ (θ ) = =
Z + Zo 2 2 ZoZL (Z L − Z o )2 + 4Z L Z o 4ZoZ L
[( L ) +( tan θ ) 2 ]1 / 2 [ + tan 2 θ ]1 / 2
ZL − Zo ZL − Zo (Z L − Z o ) 2
(Z L − Z o ) 2

1 + tan 2 θ = sec 2 θ 1
=
4ZoZ L
[1 + sec 2 θ ]1 / 2
(Z L − Z o ) 2
5-24 微波電路講義
 1
Γ (θ ) =
4ZoZ L
[1 + sec 2 θ ]1 / 2
(Z L − Z o ) 2

1 1 2 ZoZ L 2 1
Γ 2m = → 2 −1 = ( )
2 ZoZ L 1 Γm ZL − Zo cos 2 θ m
1+ ( ) 2

Z L − Z o cos θ m
Γm 2 ZoZL
→ cos θ m =
1 − Γ 2m Z L − Z o
2 πf λ o 2 πf v p ( fo ) πf πf m f 2θ m
T E M line: θ = β l = = = → θm = → m =
vp ( f ) 4 v p ( f ) 4 fo 2 fo 2 fo fo π
f 2( f o − f m ) 2 fm 4 Γm 2 ZoZ L
= = 2− = 2 − cos − 1
fo fo fo π 1 − Γ m2 Z L − Z o

5-25 微波電路講義
 5.5 The theory of small reflections
• single-section transformer
θ

T21 ZL
Z1 Γ1 Γ2 Z2 Γ3
T12 (real)

T 21 e − jθ Γ 2 = −Γ1 , T21 = 1 + Γ1 , T12 = 1 + Γ 2

T12T21 Γ 3 e − j 2 θ
Γin Γ3 Γ in = Γ1 +
Γ1 Γ2 1 − Γ 2 Γ 3e − j 2θ
− jθ Γ 1 + Γ 12 Γ 3 e − j 2 θ + (1 − Γ 1 )(1 + Γ 1 ) Γ 3 e − j 2 θ
T12 e =
1 + Γ1 Γ 3e − j 2θ
e − jθ
Γ1 + Γ 3e − j 2θ
=
1 + Γ1 Γ 3e − j 2θ
≈ Γin Γ1 Γ3
≈ Γ 1 + Γ 3 e − j 2 θ if Z 1 ≈ Z 2 ≈ Z L
e − jθ 5-26
微波電路講義
 • multisection transformer
θ θ θ

Zo Γ Z1 Z2 ZN ZL
Γo Γ1 Γ2 ΓN (real)

Γ (θ ) = Γ o + Γ1e− j 2θ + Γ 2e− j 4θ + ......Γ N e− j 2 Nθ , if Γ o = Γ N , Γ1 = Γ N −1......

⎧ e− jNθ [ Γ o (e jNθ + e− jNθ ) + Γ1 (e j ( N −2)θ + e− j ( N −2)θ ) + ......Γ ( N −1) / 2 (e jθ + e− jθ )] N odd
= ⎨ − jNθ − jNθ j ( N − 2) θ
⎩e [ Γ o (e + e ) + Γ1 (e
jNθ
+ e− j ( N −2)θ ) + ......Γ N / 2 ] N even
⎧ − jNθ 1
⎪⎪ 2e [ Γ o cos Nθ + Γ 1 cos( N − 2) θ + .... Γ n cos( N − 2 n )θ + .... Γ( N −1) / 2 cosθ ] N odd
=⎨ 2
⎪2e− jNθ [ Γ cos Nθ + Γ cos( N − 2)θ + ....Γ cos( N − 2n)θ + .... 1 Γ ] N even
⎪⎩ o 1 n
2
N /2

given Γ (θ ), design Z1 , Z 2 ,....Z n

5-27 微波電路講義
 5.6 Binomial multisection matching transformer
• maximal flatness response for Γ (θ)
N
Γ (θ) = A(1 + e ) = A∑ CnN e − j 2 nθ = Γ o + Γ1e − j 2θ + Γ 2 e − j 4θ + ......Γ N e − j 2 Nθ
− j 2θ N

n =0

⇒ Γ n = ACnN
Discussion d N −1 Γ(θ )
1. Maximal flatness response, =0
dθ N −1 θ=
π
or l =
λ
2 4

2. Γ (0) = A 2 N = Z L − Z o → A = 2− N Z L − Z o
Z L + Zo Z L + Zo

Z n +1 − Z n 1 Z n +1 x −1
3. Γ n = ≈ ln (ln x ≈ 2 )
Z n +1 + Z n 2 Zn x +1
Z n +1 Z − Zo N Z
→ ln ≈ 2 Γ n = 2 ACnN = 2 × 2− N L Cn ≈ 2− N CnN ln L
Zn Z L + Zo Zo

(p.249, Table 5.1 for Zn values)

5-28 微波電路講義
 Δf 4 −1 1 Γ m N1
4. = 2 − cos [ ( ) ], N ↑ , Δ f ↑ , Γ m = 2 N A con N θ m
fo π 2 A
∵ Γ (θ) = A(1 + e − j 2θ ) N → Γ (θ) = A 2 N cos N θ
Δf 4 4 −1 1 Γ m N
1
= 2 − θm = 2 − cos [ ( ) ]
fo π π 2 A

5. Ex.5.6 ZL=50Ω, Zo=100Ω, N=3, Γm=0.05

Z L − Zo 1 Z Δf
N = 3, A = 2 − N = N +1 ln L = − 0.0433, = 70%
Z L + Zo 2 Zo fo
Z n +1 Z Z Z
ln = 2 − N C nN ln L ⇒ ln 1 = 2 −3 C 03 ln L → Z1 = 91.7 Ω
Zn Zo Zo Zo
Z2 Z Z Z
ln = 2 −3 C13 ln L → Z 2 = 70.7 Ω , ln 3 = 2 −3 C 23 ln L → Z 3 = 54.5Ω
Z1 Zo Z2 Zo

(p.250, Fig.5.15 for frequency response of |Γ|)

5-29 微波電路講義
 5.7 Chebyshev multisection matching transformers

• Equal ripple response for Γ (θ): optimal design

Γ (θ ) = 2 e − jNθ [ Γ o cos N θ + Γ 1 cos( N − 2)θ + .... Γ n cos( N − 2 n )θ + ....]
= Ae − jNθ TN (sec θ m cos θ ) ⇒ Γ n (p.254, Table 5.2)
T1 ( x ) = x , T2 ( x ) = 2 x 2 − 1, T3 ( x ) = 4 x 3 − 3 x , T4 ( x ) = 8 x 4 − 8 x 2 + 1,
cos θ -1 1
Tn ( x ) = 2 xTn -1 ( x ) − Tn- 2 ( x ), x ≡ , x ≤1 x
cos θ m
π-θm θm
Discussion
1. Γ(0) = ATN (sec θm ) = Z L − Z o → Γ m = A = Z L − Z o 1
Z L + Zo Z L + Z o TN (sec θm )
2. TN (sec θm ) = 1 Z L − Z o → θm (5.63) →
Δf
= 2− m
4θ
Γm Z L + Zo fo π

3. Optimal design: given Γm, maximal Δf

given Δf , minimal Γm.
5-30 微波電路講義
 4. Ex.5.7 ZL=100Ω, Zo=50Ω, N=3, Γm=0.05
N = 3, Γ (θ ) = 2 e − j 3θ ( Γ o cos 3θ + Γ1 cos θ ) = Ae − j 3θ T3 (sec θ m cos θ )
= Ae − j 3θ (4 sec 3 θ m cos 3 θ − 3 sec θ m cos θ )
= Ae − j 3θ [sec 3 θ m (cos 3θ + 3 cos θ ) − 3 sec θ m cos θ ]
Z L − Zo 1 Δf
A= = Γ m → sec θ m =1.408 → θ m = 44.7 o → = 101%
Z L + Z o T3 (sec θ m ) fo
⇒ 2 Γ o = A sec 3 θ m → Γ o = 0.0 698 = Γ 3
2 Γ1 = A(3sec 3 θ m − 3sec θ m ) → Γ1 = 0.1037 = Γ 2
Z1 − Z o
Γo = → Z1 = 57.5Ω
Z1 + Z o
Z 2 − Z1
Γ1 = → Z 2 = 70.7 Ω
Z 2 + Z1
Z3 − Z2
Γo = → Z 3 = 87 Ω
Z3 + Z2
frequency response (p.255, Fig.5.17)
5-31 微波電路講義
5.8 Tapered lines
• Frequency response
Z+ΔZ
Z(z)

ZL
Zo Γ ΔΓ

0 z z+Δz L z
Z + ΔZ − Z ΔZ
ΔΓ = ≈
Z + ΔZ + Z 2Z
1 dZ 1 d ln Z Z o
→ dΓ = = dz
2 Z 2 dz
1 L d Z
→ Γ (θ) = ∫ e − j 2βz (ln ) dz
2 0 dz Zo
5-32 微波電路講義
Discussion
1. Exponential taper
Z ( z ) = Z o e az 0< z< L
1 Z
Z ( L ) = Z L = Z o e aL → a = ln L
L Zo
1 L d 1 Z sin β L
→ Γ (θ ) =
2 ∫ 0
e− j2β z
dz
(ln e az ) dz = ln L e − j β L
2 Zo βL
L ↑ , Γ (θ ) ↓ (p. 257, Fig.5.19)
2. Triangular taper
⎧⎪ Z o e 2 (z/L ) ln Z L Z o
2
0< z< L 2
Z (z) = ⎨
( 4 z/L − 2 z 2 /L2 − 1 ) 2 ln Z L Z o
⎪⎩ o
Z e L 2< z< L
1 Z L − j β L sin( β L 2) 2
Γ (θ ) = ln e [ ]
2 Zo βL 2
first null at 2 π (p. 258, Fig.5.20)
5-33 微波電路講義
3. Klopfenstein taper
Z ( z ) (5.74), (5.75), Γ ( θ ) (5.76), optimal taper

4. Ex.5.8 ZL=100Ω, Zo=50Ω, Γm=0.02

1 ZL
exponential taper: Z ( z ) = Z o eaz , a = ln = 0.693 L
L Zo
1 Z sin β L
Γ (θ ) = ln L
2 Zo β L
1 Z sin β L 2 2
triangular taper: Γ (θ ) = ln L [ ]
2 Zo β L 2
cos ( β L)2 − A2
Klopfenstein taper: Γ (θ ) = Γ o , A = 3.543, Γ o = 0.346
cosh A
frequency response (p. 260, Fig.5.21)

5-34 微波電路講義
 5.9 The Bode-Fano criterion

lossless ∞ 1 π
Zo Γ(ω) matching C R ∫ 0
ln
Γ (ω)
dω ≤
RC
network

Discussion
1.
|Γ | ln1/ |Γ |
1 ln1/Γm

Γm
Δω ω Δω ω

5-35 微波電路講義
 ∞ 1 1
∫
0
ln
Γ ( ω)
dω = ∫
Δω
ln
Γm
dω

1 π
= Δω ln ≤ : constant
Γ m RC

(1) given RC → Δω↑ → Γm↑

(2) Γm≠ 0, unless Δω=0
i.e., Γm=0 only at a finite number of frequencies
(3) R and/or C ↑ → Δω ↓ and/or Γm↑
⇒ high Q load is harder to match

lossless
Zo Γ(ω) matching C R
network

parallel resonator Q= ωoRC

5-36 微波電路講義
 Solved problems: Prob.5.7 find Z1 and l zL
1.95+j0.98 4+j2

Zo=40Ω Z1, l 200+j100 zin

2.05
r’min 0.8 r’max 5.25
200 + j100 + jZ1 tan β l
40 = Z1
Z1 + j (200 + j100) tan β l (Z1)
→ 40 Z1 + j8000 tan βl − 4000 tan β l = 200 Z1 + j100 Z1 + jZ12 tan β l
40 Z1 − 4000 tan β l = 200 Z1 → Z1 = −25 tan β l
→ Z1 kr 'min = 0.8
j8000 tan β l = j100 Z1 + jZ12 tan β l k= ,
50 kr 'max = 5.25
→ r 'min r 'max =1
j8000 = − j 2500 + j 625 tan 2 βl → tan β l = −4.1 → k r 'min r 'max
2
= k 2 = 4.2
Z1 = 102.5 → k = 2.05
→
l = 0.288λ Z1 = 50 × 2.05 = 102.5

5-37 微波電路講義
Prob.5.25 find the best RL over operating range of 3.1~10.6GHz
0.6pF
UWB 75Ω
Zo Γ(ω)
network

∞ 1 π
∫ 0
ln
Γ (ω)
dω ≤
RC
1 π
→ ln ≤
Γm 2 π (10.6 − 3.1) × 10 9 × 75 × 0.6 × 10 − 12
1
→ ln ≤ 1.48 → Γ m ≥ 0.228, RL ≤ 6.4 dB
Γm

Suggested homework (due 2 weeks): 5, 11, 13, 22

ADS examples: Ch5_prj

5-38 微波電路講義