RAI UNIVERSITY, GUJARAT

End-Semester Examination MAY 2014

B.Tech EngineeringSemester VI


Subject: VLSI & Embedded Systems

Subject Code: Total Marks: 100
Enrollment No.:
Date:
Time: 3 hours


Q-1 Multiple Choice Questions:(1 mark each)
1. For a junction FET in the pinch-off region as the drain voltage is increased the drain current:
(a) Becomes Zero (b) Abruptly decreases
(c) Abruptly Increases (d) remains Constant
2. In modern MOSFET, the material used for the gate is:
(a) High-purity silicon (b) High-purity silica
(c) Heavily doped polycrystalline
silicon
(d) Epitaxially grown silicon
3. The threshold voltage of an n-channel MOSFET can be increased by:
(a) Increasing the channel
dopant concentration
(b) Reducing the channel dopant concentration
(c) Reducing the gate oxide
thickness
(d) Reducing the channel length
4. The nominal value of the dc supply voltage for TTL and CMOS is ________.
(a) +3 V (b) +5V
(c) +9V (d) +12V
5. For a CMOS gate, which is the best speed-power product?
(a) 1.4Pj (b) 1.6PJ
(c) 2.4PJ (d) 3.3PJ
6. Which factor does not affect CMOS loading?
(a) Charging time associated with the
output resistance of the driving gate
(b) Discharging time associated with the output
resistance of the driving gate
(c) Output capacitance of the load gates (d) Input capacitance of the load gates
7. Which transistor element is used in CMOS logic?
(a) FET (b) MOSFET
(c) BIPOLAR (d) UNIJUNCTION
8. An embedded system must have:
(a) Hard Disk (b) Processor and Memory
(c) Operating System (d) Processor and Input output units
9. An embedded system hardware can
(a) have microprocessor or
microcontroller or single purpose
processor
(b) have digital signal processor
(c) one or several microprocessor or
microcontroller or digital signal
processor or single purpose
processors
(d) not have single purpose processor (s)

10. An embedded system has RAM memory
(a)
for storing the variables during
program run, stack and input or
output buffers, for example, for
speech or image
(b)
for storing all the instructions and data
(c)
for storing the programs from
external secondary memory
(d) for fetching instructions and data into cache(s)

























































Q-2 Answer in short/Define:(2 marks each)
1. Explain Electric field Intensity?
2. What do you mean by Potential?
3. Define Electric Dipole?
4. State Bio-savarts Law?
5. State Amperes Circuital law?

Q-3 Answer in brief:(3 marks each)
1. Define and prove Potential Difference?
2. Determine H at P
2
(0.4,0.3,0) in the field of an 8A filamentary current directed inward
from infinity to the origin on the positive x axis and then outward to infinity along the y
axis?
3. State and prove Stokes theorem?

Q-4 Answer the following:(5 marks each)
1. What do you mean by magnetic Flux and Magnetic flux density?
2. If H= 0.2z
2
a
x
for z > 0, and H = 0 elsewhere as shown in figure below. Calculate
. H dL

about a square path with side d, centered at (0,0,z

1
) in the y = 0 plane where
z
1
> d/2?
3.
Given the potential field,
2
2 5 V x y z , and a point P(-4, 3, 6), we wish to find several
numerical values at point p: the potential V,the electric field intensity E, the direction of
E, the electric flux density D, and the volume charge density
v
?

Q-5 Answer the following:(7 marks each)
1. State and prove Curl function?
2. Define and Prove Biot Savart Law?
3. Define and prove Amperes circuital law?
Q-6 Answer in detail: (10 marks each)
1. State and prove Energy density in the electrostatic field?
2. a) State and prove potential gradient function for rectangular, cylindrical and spherical
co-ordinates?
b) For the given non uniform field
2
x y z
E ya xa a
Determine the work expended in carrying 2C from B(1,0,1) to A(0.8,0.6,1) along the
shorter arc of the circle;

2 2
x y , z ?