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by BU806/D

SEMICONDUCTOR TECHNICAL DATA




 


8.0 AMPERE
DARLINGTON
NPN POWER
TRANSISTORS
60 WATTS
200 VOLTS

This Darlington transistor is a high voltage, high speed device for use in horizontal
deflection circuits in TVs and CRTs.
High Voltage: VCEV = 330 or 400 V
Fast Switching Speed:
tc = 1.0 s (max)
Low Saturation Voltage:
VCE(sat) = 1.5 V (max)
Packaged in JEDEC TO220AB
Damper Diode VF is specified.
VF = 2.0 V (max)

CASE 221A06
TO220AB

MAXIMUM RATINGS

Symbol

BU806

Unit

CollectorEmitter Voltage

Rating

VCEO

200

Vdc

CollectorEmitter Voltage

VCEV

400

Vdc

CollectorBase Voltage

VCBO

400

Vdc

EmitterBase Voltage

VEBO

6.0

Vdc

Collector Current Continuous

Peak

IC

8.0
15

Adc

EmitterCollector Diode Current

IF

10

Adc

Base Current

IB

2.0

Adc

Total Device Dissipation, TC = 25C

Derate above TC = 25_C

PD

60
0.48

Watts
W/_C

TJ, Tstg

65 to 150

_C

Symbol

Max

Unit

Thermal Resistance, Junction to Case

RJC

2.08

_C/W

Thermal Resistance, Junction to Ambient

RJA

70

_C/W

Lead Temperature for Soldering Purposes,

1/8 from Case for 5.0 Seconds

TL

275

_C

Operating and Storage Junction Temperature Range

THERMAL CHARACTERISTICS

Characteristic

REV 1

Motorola, Inc. 1995

Motorola Bipolar Power Transistor Device Data


BU806

v
v
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic

Symbol

Min

Typ

Max

Unit

VCEO(sus)

200

Vdc

Collector Cutoff Current

(VCE = Rated VCBO, VBE = 0)

ICES

100

Adc

Collector Cutoff Current

(VCE = Rated VCEV, VBE(off) = 6.0 Vdc)

ICEV

100

Adc

Emitter Cutoff Current

(VEB = 6.0 Vdc, IC = 0)

IEBO

3.0

mAdc

CollectorEmitter Saturation Voltage

(IC = 5.0 Adc, IB = 50 mAdc)

VCE(sat)

1.5

Vdc

BaseEmitter Saturation Voltage

(IC = 5.0 Adc, IB = 50 mAdc)

VBE(sat)

2.4

Vdc

VF

2.0

Vdc

ton

0.35

ts

0.55

tf

0.20

tc

0.40

1.0

OFF CHARACTERISTICS

CollectorEmitter Sustaining Voltage (1)

(IC = 100 mAdc, IB = 0)

ON CHARACTERISTICS (1)

EmitterCollector Diode Forward Voltage

(IF = 4.0 Adc)

SWITCHING CHARACTERISTICS
TurnOn Time

(Resistive Load, VCC = 100 Vdc,

IC = 5.0 Adc, IB1 = 50 mAdc,
IB2 = 500 mAdc)

Storage Time
Fall Time

Crossover Time
(IC = 5.0 Adc, IB1 = 50 mAdc, VBE(off) = 4.0 Vdc,
Vclamp = 200 Vdc, L = 500 H)

(1) Pulse Test: Pulse Width

300 s, Duty Cycle

1%.

20

hFE, DC CURRENT GAIN

400

IC, COLLECTOR CURRENT (AMPS)

600
VCE = 5.0 V
TJ = 25C

300
200

100
80
60

10 nonrepetitive

1.0 ms

0.1

BONDING WIRE LIMIT

THERMAL LIMIT
SECOND BREAKDOWN LIMIT

TC = 25C
0.2

0.3

0.5 0.7 1.0

5.0 7.0
2.0 3.0
IC, COLLECTOR CURRENT (AMPS)

Figure 1. DC Current Gain

10 s

dc

1.0

40
30

5.0 ms

10

0
3.0

50 ms
BU806

60
100
200 300
10
VCE, COLLECTOREMITTER VOLTAGE (VOLTS)

Figure 2. Safe Operating Area (FBSOA)

Motorola Bipolar Power Transistor Device Data

BU806
PACKAGE DIMENSIONS

T
B

SEATING
PLANE

F
T

DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z

Q
1 2 3

H
K
Z
L

NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.

G
D
N

INCHES
MIN
MAX
0.570
0.620
0.380
0.405
0.160
0.190
0.025
0.035
0.142
0.147
0.095
0.105
0.110
0.155
0.018
0.025
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045

0.080

STYLE 1:
PIN 1.
2.
3.
4.

MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.28
4.07
4.82
0.64
0.88
3.61
3.73
2.42
2.66
2.80
3.93
0.46
0.64
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15

2.04

BASE
COLLECTOR
EMITTER
COLLECTOR

CASE 221A06
TO220AB
ISSUE Y

Motorola Bipolar Power Transistor Device Data

BU806

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Motorola Bipolar Power Transistor Device Data

*BU806/D*

BU806/D

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