OBJECTIVES QUESTIONS

ELECTRONIC DEVICES & CIRCUITS

1. A vacuum tube has electrodes confined inside an evacuated
(a) glass envelope only (b) metal envelope only
(c) either of (a) and (b) above (d) none of the above
2. In which of the following application vacuum tubes are still being used?
(a) public address system (b) radio receivers
(c) radio transmitters (d) electroplating plants
3. acuum tubes in a radio transmitter are used to
(a) provide dc supply (b) generate high power radio waves
(c) record programs (d) provide lighting inside the studio
!. "ransistors have not replaced vacuum tubes because
(a) transistors are non#linear
(b) transistors do not have grid
(c) high power transistors are not available
(d) heat dissipation from transistors is difficult
$. acuum tubes are still used in some electronic device due to
(a) their long life
(b) their trouble free life
(c) their capacity to handle high power
(d) their better reliability
%. "he emission of electrons in a vacuum diode is achieved by
(a) electrostatic field (b) magnetic field
(c) heating (d) electron bombardment
&. At ordinary temperatures' energy of free electrons in metals as compared with
wor( function is
(a) more (b) less
(c) e)ual (d) none of the above
*. "he energy can be provided to electrons to cross the surface barrier by
(a) heating (b) electric field
(c) light (d) any of the above
+. "he principle of emission of electrons from a metal surface' under the influence
of light is (nown as
(a) photo electric emission (b) seebec( effect
(c) secondary emission (d) none of the above
1,. -ith an indirectly heated cathode' the heater voltage
(a) must be a steady dc voltage (b) is applied to the cathode
(c) is separate from the cathode circuit
(d) none of the above
11. .econdary emission of electrons occurs when the metal surface is
(a) cooled to very low temperatures (b) heated
(c) sub/ected to electric as well as magnetic field
(d) bombardment with high energy electrons
12. "he filament of a vacuum tube can be heated by
(a) dc voltage only (b) low fre)uency ac voltage
(c) rectified dc voltage (d) any of the above
13. "he wor( function for the o0ide coated emitter material is
(a) 1., e (b) 2.%3 e
(c) 3.+* e (d) !.$2 e
1!. "he wor( function of pure tungsten is
(a) 1.$ e (b) 2.$ e
(c) *.$ e (d) !.$ e
1$. 10ide coated cathodes are used for the tubes
(a) designed to handle small power
(b) designed to handle large power
(c) used in radio transmitters
(d) none of the above
1%. "he emission efficiency of a cathode is
(a) emission current2volt
(b) emission current2
,
3
(c) emission current2-
(d) emission current2electron density
1&. A directly heated cathode may be made of
(a) tungsten
(b) thoriated tungsten
(c) tungsten coated with strontium o0ide
(d) any of the above
1*. In case of indirectly heated tubes the heater filament is usually made of
(a) manganin (b) tungsten
(c) invar (d) any of the above
1+. "he anode material is usually
(a) nic(el (b) carbon
(c) copper (d) aluminium
2,. 4ins are often provided on
(a) heater filament (b) cathode
(c) anode (d) all of the above
21. In triodes' the grid is made in the form of
(a) single filament wire (b) metal strip
(c) mesh (d) metallic cylinder
22. In a troide' the third electrode is (ept
(a) near the cathode (b) near the anode
(c) e0actly in between cathode and anode
(d) anywhere between cathode and anode
23. -hich of the following vacuum tube cannot be used as an amplifier?
(a) 5iode (b) "riode
(c) "etrode (d) 6entode
2!. "he process by which impurities are added to a pure semi#conductor is
(a) 5iffusing (b) 5rift
(c) 5oping (d) 7i0ing
2$. -hich of the following is a passive component?
(a) .emi#conductor device (b) acuum tube device
(c) 3apacitors (d) All of the above
2%. A 8ermanium atom contains
(a) "wo electron orbits (b) "hree valence electrons
(c) 4our protons (d) 4our valance electron
2&. "he type of atomic bonding most common in semi#conductor is
(a) 7etallic (b) Ionic
(c) 3ovalent (d) 3hemical
2*. -hen at atom either gains or loses an electron it is said to be
(a) Ioni9ed (b) :onded
(c) ;0cited (d) .tablised (e) An acceptor
2+. "he diameter of an atom is
(a) 1,
#%
metre (b) 1,
#1,
metre
(c) 1,
#1$
metre (d) 1,
#21
metre
3,. "he atomic weight of an atom is determined by
(a) "he number of protons
(b) "he number of neutrons
(c) "he number of protons and neutrons
(d) "he number of electrons and protons
31. "he constituents of an atoms are
I. 6rotons II. <eutrons
III. ;lectrons I. 6ositron
"he mass of which two constituents is nearly the same?
(a) I and II only (b) II and III only
(c) I and III only (d) II and I only
32. "he number of protons in an atom is called its
(a) isotope number (b) atomic number
(c) atomic weight (d) none of the above
33. "he ma0imum number of electrons in third orbit can be
(a) 3 (b) %
(c) 12 (d) 1*
3!. alence electrons are the
(a) loosely pac(ed electrons (b) mobile electrons
(c) electrons present in the outermost orbit
(d) electrons that of not carry any charge
3$. -hich of the following element has lowest atomic number?
(a) : (b) Al
(c) 8a (d) In
3%. -hich of the following element has four valence electrons?
(a) .ilicon (b) 8ermanium
(c) :oth (a) and (b) above (d) <one of the above
3&. -hich of the following element has four valance electrons?
(a) .ilicon (b) Antimony
(c) 6hosphorous (d) :oron
3*. "he forbidden energy gap for germanium is
(a) ,.12 e (b) ,.32 e
(c) ,.&2 e d) ,.+2 e
3+. 4ree electrons e0ist in
(a) 4irst band (b) .econd band
(c) "hird band (d) 3onduction band
!,. "he advantage of transistor over vacuum tube is
(a) no heat is re)uired
(b) small si9e and light in weight
(c) very low power consumption
(d) all of the above
!1. A collector collects
(a) electrons from the base in case of 6<6 transistor
(b) electrons from the emitter in case 6<6 transistor
(c) holes from the base in case of <6< transistor
(d) holes from the base in case of 6<6 transistor
!2. A 6<6 transistor is made of
(a) .ilicon (b) 8ermanium
(c) ;ither silicon or germanium (d) <one of the above
!3. A transistor which of the following region is very lightly doped and is very
thin?
(a) ;mitter (b) :ase
(c) 3ollector (d) <one of the above
!!. In a 6<6 transistor' with normal bias' the emitter /unction
(a) is always reverse biased (b) offers very high resistance
(c) offers a low resistance (d) remains open
!$. In a <6< transistor' when emitter /unction is forward biased and collector
/unction is reverse biased' the transistor will operate in
(a) active region (b) saturation region
(c) cut off region (d) inverted region
!%. In a 6<6 transistor' electrons flow
(a) into the transistor at the collector only
(b) into the transistor at the base and the collector leads
(c) out of the transistor at base' and collector leads
(d) out of the transistor at base collector as well as emitter leads
!&. A transistor may fail due to
(a) open weld at the wire leads to the semiconductor
(b) short circuit caused by momentary overloads
(c) overheating due to circuit failures
(d) any of the above
!*. Arrow head on a transistor symbol indicates
(a) 5irection of electron current in emitter
(b) direction of hole current in emitter
(c) different current in emitter
(d) drift current in emitter
!+. "he heat sin( disposes off heat mainly by
(a) radiation (b) natural convection
(c) forced convection (d) conduction
$,. A transistor has
I. 3ollector
II. ;mitter
III. :ase
In a 6<6 transistor the electron flow into the transistor at
(a) I only (b) II only
(c) II and III only (d) I and III only
$1. A diac is a semi#conductor device which acts as a
(a) 2 terminal unidirectional switch
(b) 2 terminal bidirectional switch
(c) 3 terminal bidirectional switch
(d) ! terminal multi#directional switch
$2. A triac is a semi#conductor device which acts as a
(a) 2 terminal unidirectional switch
(b) 2 terminal bidirectional switch
(c) 3 terminal bidirectional switch
(d) ! terminal multi#directional switch
$3. "he input and output signals for 3; amplifier are always
(a) e)ual (b) inphase
(c) out of phase (d) complementary to each other
$!. 3ommon emitter transistor has
(a) high current and high voltage gain
(b) low current gain and low voltage gain
(c) high current gain and low voltage gain
(d) low current and voltage gain
$$. -hich of the following is not provided in a 6<6 transistor?
(a) :ase (b) 3ollector
(c) ;mitter (d) =eater
$%. A dc amplifiers
(a) dc only (b) ac only
(c) both ac and dc (d) neither of the above
$&. -hich of the following device acts as an <6< and a 6<6 transistor connected
base to base and emitter to collector?
(a) >?" (b) .3@
(c) 5iac (d) "riac
$*. -hich of the following is the fastest switching device?
(a) ?4;" (b) :?"
(c) 71.4;" (d) "riode
$+. An amplifier should have
(a) high fidelity (b) low noise
(c) stable operation (d) all of the above
%,. 4;" has
a) high input impedance b ) low input impedance
c) high output impedance d) both a and c
%1. "he biasing of ?4;"271.4;" can be done by using
a)self#bias b)forward bias c)either a or b d)none.
%2. "he value for lattice constant for silicon e)uals toA
a)$.!3B1,
C11
b)$.!3B1,
#+
c)$.!3B1,
#1,
d)$.!3B1,
#1$
%3. 3ommon mode re/ection ratio e)uals
a)a
dm
2a
cm
b)ac
m
2ad
m
c)a
dm
2a
c
d)none.
%!.An ideal diode conducts abruptly for
a)
d
D, b)
d
E, c)
d
F, d)none
%$."he area depleted of charge carrier and having only ions is called
a)space charge region b)transistion region c)both aGb d)none
%%.A clamping circuit is also called as
a)53 adder b)53 subtractor c)both aGc d)dc restorer
%&. "he pea( inverse voltage of full wave rectifier is
a)
ma0
b)2
ma0
c)
ma0
22 d)2
min
%*. A rectifier can be called as
a)amplitude detector b)signal detector c)neither a nor b d)either a or b.
%+. A :?" is aA
a) current controlled current device b)voltage controlled current device c) voltage
controlled voltage device d)either a or b
&,. 71.4;" input resistance is typically of the order
a)1,
1,
#1,
1$
H b) 1,
1,
#1,
12
H c) 1,
1,
#1,
21
H d)none
&1.?4;" is a
a) voltage controlled voltage device b)voltage controlled current device c) current
controlled voltage device d)either a or b
&2.-hat is ripple factor?
a) ripple voltage2dc voltage b)
rms
2
dc
c)I
rms
2I
dc
d)any of the above
&3.the depletion region is an open circuited 6< /unction contain
a)electrons b)holes c)uncovered immobile impurity ions d)none.
&!.the dynamic response @ of a diode varies as
a)12I b)12I
2
c)I d)I
2.
&$. 3ut in voltage of silicon is appro0imately
a) ,.2 b) ,.% c) 1.1 d) any other value
..
&%. "he reverse saturation current Io fo r a silicon diode varies
a) "
3
b) "
1.$
c) "
2
d) 2" where " is temp
&&."he product of diffusion capacitance 3
5
and dynamic resistance of a diode is
e)ual to
a)I
2
b)I c) 12I d)any other )uantity -here I is the lifetime of minority carriers
&*. 4ermi level represents the energy level with probability of itJs operation
a) , b) $,K c) 1,,K d) 2$K
&+. At , ( all the )uantum states with energy less than fermilevel e
f
are occupied
a)true b)false
*,. Intrinsic concentration of charge carriers in a semi conductor varies as
a) " b)"
2
c)"
3
d)t
#3
*1. "he diffusion current is directly proportional to
a)applied electric field b)concentration radient of charge carrier c)s)uare of applied
electric field d)s)uare root of applied ele.field.
*2. "he ratio of diffusion for holes to mobility for holes is proportional to
a) " b)"L c)12" d)independent of " 'here " is temperature
*3. Might falls on one end of the long open circuited n#type semiconductor from far
low level in/ection the hole ct is due predominantly to
a)drift b)diffusion c)either a or b d)length of the bar
*!.4orward transconductance 8
fs
F
a) N
ds
2NI
d
b) N
gs
2N
ds
c) NI
d
2N
gs
d) N
gs
2NI
d.
*$.71.4;" is said to be operate in depletion mode when
a) N
gs
D, b) N
gs
EF, c) N
gs
F, d) none .
*%.-hen does the electric field become strong enough to pull free electrons to the
layer under the insulator
a) N
gs
EF N
t
b) N
gs
DF N
t
c) N
gs
DN
t
d)none.
*&.which one of the following is a compound semi conductor
a)8aAs b)8a.i c)<acl d)none.
**.In pnp transistor'on reaching the collector /unction potential behavior falls down
a)true b) false
*+."ransistor O approaches unity when
a)Pb2 PeD1 b) Pb2 PeE1 c) Pb2 PeF1 d)none
+,.As the magnitude of reverse detector /unction voltage increase the effective bias
width a)increases b)decreases c)remains unaffected d) none
+1.Materal pnp integrated transistor has current gain
a) lower than b) higher than
c)of the same order as the conventional pnp transistor
d)of the same order as the conventional npn
+2.;pita0ial growth involves chemical reaction a)yes b)no
+3. 4;" has offset voltage of about
a),.2v b),.%v c)1.1v d),v
+!."he concentration of minority carriers at ?3 in the base region of pnp transistor
operating in the active region
a), b)thermal e)uilibrium value p c)same as the value of ?ed)none
+$.As the semiconductor photodiode
a)photoconductive effect b) photo emissive effect c) photovoltaic effect d)none
+%.In a tunnel diode 'width of depletion region is of the order of
a)1,, amstrong units b),.1 microns c)1 microns d)12.3 microns
+&."ransferred electron bul( effect ta(es place in
a)ge#arsenide b) silicon c) ge d) none
+*.In tunnel diode impurity concentration of the order of
a)1 in 1,Q* b) 1 in 1,Q$
c) 1 in 1,Q3 d) 1 in 1,
++."he other name for the 71.4;" is
a)I84;" b)I871.4;" c)I8?4;" d)<1<;
1,,.4;" have higher input impedence than :?"Js
a)true b)false
1,1.In an 4;" transconductance gm is propotional to
a)I5. b)I5.Q2 c)s).root of I5. d)12I5.
1,2.In a ?4;" 'dynamic drain resistance rd is of the order of
a)1( b)1,( c)1,,( d)1,mR
1,3.Input resistance of 4;" common source amp in its low fre)uency small signal
operation is
a)very small b)medium c)high d)almost infinite
1,!."he current gain of the transistor amplifier is lowest in
a)3: configuration b)3; c)33 d) none
1,$.Input resistances of ideal voltage amplifier G ideal current amplifier are a)S',
b),' S c) S'S d),',
1,%..tability factor in fi0ed bias 3; amplifier is given by
a)T b) TC1 c)12 TC1 d)12 T
1,&. In half wave rectifier'the lowest ripple fre)uency is
a)f22 b)f c)2f d)3f
1,*.In a full wave rectifier the lowest ripple fre)uency is
a)f22 b) f c) 2f d) 3f