BC556B, BC557, A, B, C,

BC558B, C

Amplifier Transistors
PNP Silicon

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COLLECTOR
MAXIMUM RATINGS
1
Rating Symbol Value Unit
Collector-Emitter Voltage VCEO Vdc 2
1
BC556 –65 BASE 2
BC557 –45 3
BC558 –30
3 CASE 29
Collector-Base Voltage VCBO Vdc EMITTER TO–92
BC556 –80 STYLE 17
BC557 –50
BC558 –30
Emitter-Base Voltage VEBO –5.0 Vdc ORDERING INFORMATION

Collector Current – Continuous IC –100 mAdc Device Package Shipping

Collector Current – Peak ICM –200
BC556B TO–92 5000 Units/Box
Base Current – Peak IBM –200 mAdc
BC556BRL1 TO–92 2000/Tape & Reel
Total Device Dissipation PD
@ TA = 25°C 625 mW BC556BZL1 TO–92 2000/Ammo Pack
Derate above 25°C 5.0 mW/°C
BC557 TO–92 5000 Units/Box
Total Device Dissipation PD
@ TC = 25°C 1.5 Watts BC557ZL1 TO–92 2000/Ammo Pack
Derate above 25°C 12 mW/°C
BC557A TO–92 5000 Units/Box
Operating and Storage Junction TJ, Tstg –55 to °C
Temperature Range +150 BC557AZL1 TO–92 2000/Ammo Pack
THERMAL CHARACTERISTICS BC557B TO–92 5000 Units/Box
Characteristic Symbol Max Unit
BC557BRL1 TO–92 2000/Tape & Reel
Thermal Resistance, RθJA 200 °C/W
Junction to Ambient BC557BZL1 TO–92 2000/Ammo Pack

Thermal Resistance, RθJC 83.3 °C/W BC557C TO–92 5000 Units/Box

Junction to Case
BC557CZL1 TO–92 2000/Ammo Pack

BC558B TO–92 5000 Units/Box

BC558BRL TO–92 2000/Tape & Reel

BC558BRL1 TO–92 2000/Tape & Reel

BC558BZL1 TO–92 2000/Ammo Pack

BC558C TO–92 5000 Units/Box

BC558CRL1 TO–92 2000/Tape & Reel

BC558ZL1 TO–92 2000/Ammo Pack

BC558CZL1 TO–92 2000/Ammo Pack

 Semiconductor Components Industries, LLC, 2001 1 Publication Order Number:

June, 2000 – Rev. 1 BC556/D
 BC556B, BC557, A, B, C, BC558B, C

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage V(BR)CEO V
(IC = –2.0 mAdc, IB = 0) BC556 –65 – –
BC557 –45 – –
BC558 –30 – –
Collector–Base Breakdown Voltage V(BR)CBO V
(IC = –100 µAdc) BC556 –80 – –
BC557 –50 – –
BC558 –30 – –
Emitter–Base Breakdown Voltage V(BR)EBO V
(IE = –100 Adc, IC = 0) BC556 –5.0 – –
BC557 –5.0 – –
BC558 –5.0 – –
Collector–Emitter Leakage Current ICES
(VCES = –40 V) BC556 – –2.0 –100 nA
(VCES = –20 V) BC557 – –2.0 –100
BC558 – –2.0 –100
(VCES = –20 V, TA = 125°C) BC556 – – –4.0 µA
BC557 – – –4.0
BC558 – – –4.0

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 BC556B, BC557, A, B, C, BC558B, C

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic Symbol Min Typ Max Unit
ON CHARACTERISTICS
DC Current Gain hFE –
(IC = –10 µAdc, VCE = –5.0 V) A Series Device – 90 –
B Series Devices – 150 –
C Series Devices – 270 –
(IC = –2.0 mAdc, VCE = –5.0 V) BC557 120 – 800
A Series Device 120 170 220
B Series Devices 180 290 460
C Series Devices 420 500 800
(IC = –100 mAdc, VCE = –5.0 V) A Series Device – 120 –
B Series Devices – 180 –
C Series Devices – 300 –
Collector–Emitter Saturation Voltage VCE(sat) V
(IC = –10 mAdc, IB = –0.5 mAdc) – –0.075 –0.3
(IC = –10 mAdc, IB = see Note 1) – –0.3 –0.6
(IC = –100 mAdc, IB = –5.0 mAdc) – –0.25 –0.65
Base–Emitter Saturation Voltage VBE(sat) V
(IC = –10 mAdc, IB = –0.5 mAdc) – –0.7 –
(IC = –100 mAdc, IB = –5.0 mAdc) – –1.0 –
Base–Emitter On Voltage VBE(on) V
(IC = –2.0 mAdc, VCE = –5.0 Vdc) –0.55 –0.62 –0.7
(IC = –10 mAdc, VCE = –5.0 Vdc) – –0.7 –0.82

SMALL–SIGNAL CHARACTERISTICS
Current–Gain – Bandwidth Product fT MHz
(IC = –10 mA, VCE = –5.0 V, f = 100 MHz) BC556 – 280 –
BC557 – 320 –
BC558 – 360 –
Output Capacitance Cob – 3.0 6.0 pF
(VCB = –10 V, IC = 0, f = 1.0 MHz)
Noise Figure NF dB
(IC = –0.2 mAdc, VCE = –5.0 V, BC556 – 2.0 10
RS = 2.0 k
, f = 1.0 kHz, ∆f = 200 Hz) BC557 – 2.0 10
BC558 – 2.0 10
Small–Signal Current Gain hfe –
(IC = –2.0 mAdc, VCE = 5.0 V, f = 1.0 kHz) BC557 125 – 900
A Series Device 125 – 260
B Series Devices 240 – 500
C Series Devices 450 – 900

Note 1: IC = –10 mAdc on the constant base current characteristics, which yields the point IC = –11 mAdc, VCE = –1.0 V.

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 BC556B, BC557, A, B, C, BC558B, C

BC557/BC558

2.0 -1.0
-0.9 TA = 25°C
hFE , NORMALIZED DC CURRENT GAIN

1.5 VCE = -10 V

TA = 25°C -0.8 VBE(sat) @ IC/IB = 10

1.0 -0.7

V, VOLTAGE (VOLTS)
-0.6 VBE(on) @ VCE = -10 V
0.7
-0.5
0.5 -0.4
-0.3

0.3 -0.2
-0.1 VCE(sat) @ IC/IB = 10

0.2 0
-0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 -0.1 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100
IC, COLLECTOR CURRENT (mAdc) IC, COLLECTOR CURRENT (mAdc)

Figure 1. Normalized DC Current Gain Figure 2. “Saturation” and “On” Voltages

-2.0 1.0
VCE , COLLECTOR-EMITTER VOLTAGE (V)

TA = 25°C θVB , TEMPERATURE COEFFICIENT (mV/ °C) -55°C to +125°C

1.2
-1.6

1.6
-1.2
2.0
IC = IC = -50 mA IC = -200 mA
-0.8
-10 mA
2.4
IC = -100 mA
IC = -20 mA
-0.4
2.8

0
-0.02 -0.1 -1.0 -10 -20 -0.2 -1.0 -10 -100
IB, BASE CURRENT (mA) IC, COLLECTOR CURRENT (mA)

Figure 3. Collector Saturation Region Figure 4. Base–Emitter Temperature Coefficient

T CURRENT-GAIN - BANDWIDTH PRODUCT (MHz)

10 400
Cib 300
7.0
TA = 25°C 200
C, CAPACITANCE (pF)

5.0 150 VCE = -10 V

TA = 25°C
Cob 100
3.0
80
60
2.0
40
30

1.0 20
f,

-0.4 -0.6 -1.0 -2.0 -4.0 -6.0 -10 -20 -30 -40 -0.5 -1.0 -2.0 -3.0 -5.0 -10 -20 -30 -50
VR, REVERSE VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mAdc)

Figure 5. Capacitances Figure 6. Current–Gain – Bandwidth Product

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 BC556B, BC557, A, B, C, BC558B, C

BC556

-1.0
hFE , DC CURRENT GAIN (NORMALIZED)

TJ = 25°C
VCE = -5.0 V
TA = 25°C -0.8
VBE(sat) @ IC/IB = 10

V, VOLTAGE (VOLTS)
2.0
-0.6
VBE @ VCE = -5.0 V
1.0
-0.4
0.5

-0.2
0.2 VCE(sat) @ IC/IB = 10

0
-0.1 -0.2 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)

Figure 7. DC Current Gain Figure 8. “On” Voltage

-2.0 -1.0
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)

θVB, TEMPERATURE COEFFICIENT (mV/ °C)

-1.6 -1.4
IC = -20 mA -50 mA -100 mA -200 mA
-1.2 -10 mA -1.8
θVB for VBE
-55°C to 125°C
-0.8 -2.2

-0.4 -2.6

TJ = 25°C
0 -3.0
-0.02 -0.05 -0.1 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200
IB, BASE CURRENT (mA) IC, COLLECTOR CURRENT (mA)

Figure 9. Collector Saturation Region Figure 10. Base–Emitter Temperature Coefficient

40
T CURRENT-GAIN - BANDWIDTH PRODUCT

VCE = -5.0 V
TJ = 25°C 500
20 Cib
C, CAPACITANCE (pF)

200

10 100
8.0
6.0 50
Cob
4.0
20
f,

2.0
-0.1 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 -1.0 -10 -100
VR, REVERSE VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mA)

Figure 11. Capacitance Figure 12. Current–Gain – Bandwidth Product

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 BC556B, BC557, A, B, C, BC558B, C

1.0
0.7
D = 0.5
0.5
RESISTANCE (NORMALIZED)
0.2
r(t), TRANSIENT THERMAL

0.3
0.2 SINGLE PULSE
0.05
0.1 Z
JC(t) = (t) R
JC
R
JC = 83.3
C/W MAX
0.1 P(pk) Z
JA(t) = r(t) R
JA
R
JA = 200
C/W MAX
0.07 SINGLE PULSE D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
0.05 t1 READ TIME AT t1
TJ(pk) – TC = P(pk) R
JC(t)

0.03 t2
0.02 DUTY CYCLE, D = t1/t2

0.01
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0k 2.0k 5.0k 10
t, TIME (ms)

Figure 13. Thermal Response

-200
1s 3 ms
-100
IC, COLLECTOR CURRENT (mA)

The safe operating area curves indicate IC–VCE limits of the

TA = 25°C TJ = 25°C transistor that must be observed for reliable operation. Collector
-50
load lines for specific circuits must fall below the limits indicated by
the applicable curve.
The data of Figure 14 is based upon TJ(pk) = 150°C; TC or TA is
BC558 variable depending upon conditions. Pulse curves are valid for
BC557 duty cycles to 10% provided TJ(pk) ≤ 150°C. TJ(pk) may be
-10
BC556 calculated from the data in Figure 13. At high case or ambient
-5.0 temperatures, thermal limitations will reduce the power than can
BONDING WIRE LIMIT
be handled to values less than the limitations imposed by second
THERMAL LIMIT
breakdown.
SECOND BREAKDOWN LIMIT
-2.0
-1.0 -5.0 -10 -30 -45 -65 -100
VCE, COLLECTOR-EMITTER VOLTAGE (V)

Figure 14. Active Region – Safe Operating Area

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 BC556B, BC557, A, B, C, BC558B, C

PACKAGE DIMENSIONS

TO–92
(TO–226)
CASE 29–11
ISSUE AL NOTES:
A B 1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
R IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
P BEYOND DIMENSION K MINIMUM.
L
SEATING INCHES MILLIMETERS
PLANE K DIM MIN MAX MIN MAX
A 0.175 0.205 4.45 5.20
B 0.170 0.210 4.32 5.33
C 0.125 0.165 3.18 4.19
D 0.016 0.021 0.407 0.533
X X D G 0.045 0.055 1.15 1.39
G H 0.095 0.105 2.42 2.66
J 0.015 0.020 0.39 0.50
H J K 0.500 --- 12.70 ---
L 0.250 --- 6.35 ---
V C N 0.080 0.105 2.04 2.66
P --- 0.100 --- 2.54
SECTION X–X R 0.115 --- 2.93 ---
1 N V 0.135 --- 3.43 ---
N STYLE 17:
PIN 1. COLLECTOR
2. BASE
3. EMITTER

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 BC556B, BC557, A, B, C, BC558B, C

ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes
without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability,
including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be
validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others.
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