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Airfast is a trademark of Freescale Semiconductor, Inc. All other product or service names are the property of
their respective owners. 2014 Freescale Semiconductor, Inc.

Announcing Second-Generation
Airfast RF Power Solutions

J u n e . 2 0 1 4
A2T07D160W04S
A2T07H310-24S
A2I22D050N
A2I25D012N
A2T26H160-24S


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RF High Power Cellular Application Areas


Wireless network
infrastructure
markets such as:

- Macrocell base
stations

- Small cell
equipment such
as femtocells,
enterprise
picocells,
microcell base
stations

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Airfast Second-Generation Solutions
Significant step forward in RF
performance
Portfolio includes VHVs (48 V
LDMOS), ICs, Discretes and GaN
Multi-band solutions
Targeting 700 MHz to 3.5 GHz
frequency band coverage
Industrys best Doherty gain
up to 22 dB discrete gain
up to 33 dB IC gain
Ground breaking LDMOS efficiency
over 50%
Packaging technology innovations
higher integration, improved thermal
performance
Broadest portfolio of packages in air
cavity and over-molded plastic

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Cellular Market Space Challenges
Capacity, data rates, subscribers
Ever increasing need for data
Smart devices increasing Internet traffic
Reduce equipment size
Smaller footprint to reduce installation costs
Network infrastructure evolution
Network infrastructure evolution from passive antennas
to active antennas
Reduced power consumption requirement (5G power
consumption 90% less than 4G with 10x capacity)
Multiple standards to support
2G/GSM/GPRS/EDGE
UMTS/3G/TD-SCDMA
TDD-LTE/FDD-LTE
4G / LTE-A
Reduce CAPEX/OPEX
Higher gain/higher efficiency
Higher capacity/higher bandwidth requirement



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Freescale Solutions: Airfast Second-Generation Products


Features include
High gain
eliminates stages, reducing systems cost
High efficiency
allows use of smaller heatsinks and housings
less heat leads to lower operational costs
Multi-band solutions
solutions at multiple frequency bands
Packaging technology
Improved isolation across the carrier and peaking
side improving Doherty circuit performance
Equivalent power in smaller footprint compared to
previous generations
Available in over-molded plastic packages and air
cavity packages
Enhanced customer solutions for faster time-to-market
Announcing J une 2014:
A2T07D160W04S
A2T07H310-24S
A2I22D050N
A2I25D012N
A2T26H160-24S
RF
Airfast Second-generation Product Details
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A2T07D160W04S A2T07H310-24S

A2T26H160-24S

160 W dual path device
728 to 960 MHz
Doherty performance:
52.5 dBm peak power
21.5 dB gain
51% efficiency @ 7 dB OBO
NI-780S-4L


310 W asymmetrical Doherty in-
package device
720 to 960 MHz
Doherty performance:
55 dBm peak power
18.9 dB gain
50% efficiency @ 8 dB OBO
NI-1230S-4L2L
Sampling now; Production Q214
160 W asymmetrical Doherty in-
package device
2496 to 2690 MHz
Doherty performance:
52.5 dBm peak power
15.7 dB gain
47% efficiency @ 8 dB OBO
NI-780S-4L2L
Sampling now; Production Q314
Key Product Features: Airfast Second-Generation Discretes
Designed for 28 V operation for cellular base station applications
Sampling now; Production Q214

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Key Product Features: Airfast Second-Generation ICs
Designed for 28 V operation for cellular base station applications
A2I22D050N/GN A2I25D012N/GN
50 W wideband integrated power amplifier
2000 to 2200 MHz
Doherty performance:
49 dBm peak power
28 dB gain
42% efficiency at 8 dB OBO
TO-270WB-15
Sampling now; production Q314
12 W wideband integrated power amplifier
2300 to 2690 MHz
Doherty performance:
43.5 dBm peak power
29 dB gain
41% efficiency at 8 dB OBO
TO-270WB-15
Sampling now; production Q314


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RF
RF Power Products Resources and Support
www.freescale.com/RFpower
Application notes
Data sheets
MTTF calculators, .s2p files
Package index
Product summary pages
RF Power selector tool
Models
ADS and AWR compatible large-signal models in development
www.freescale.com/RF/models
Application Support
Direct assistance available by Freescale RF applications team, via your local sales or distribution
contact.
Social Media
Blogs & Twitter (@RFLeonard)

TM
2014 Freescale Semiconductor, Inc. | External Use
www.Freescale.com