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Applied Physics

GS-122

By Atif M.Khokhar

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 Intro Band theory
 Types of Energy Bands
 Formation of Energy Bands
 Explanation of Bands in Solids
 Semi conductors
 Semi conductors and Periodic Table

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Lecture delivered @ HITEC UNIVERSITY, Taxila, by Atif M. Khokhar
 You will be able to

 Understand band theory of solids


 The formation of bands
 Band description of solids

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Lecture delivered @ HITEC UNIVERSITY, Taxila, by Atif M. Khokhar
 A theory that explains the bands formation in
solids is know as band theory of solid.
 A useful way to visualize the difference between
conductors, insulators and semiconductors and to
plot the available energies for electrons in the
materials. Instead of having discrete energies as in
the case of free atoms, the available energy states
form bands.

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Lecture delivered @ HITEC UNIVERSITY, Taxila, by Atif M. Khokhar
 According to B.T, In crystalline solid electron can
have different energy levels found by Schrödinger.
 Some of these energy levels are permissible and
other are forbidden.

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Lecture delivered @ HITEC UNIVERSITY, Taxila, by Atif M. Khokhar
Energy Level

The possible definite discrete amounts of


energy which a electron can have in an atom is
known as Energy Level.

These are only possible in Insulators.

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 The subdivided energy levels having
slightly different values of energy due to
the influence of different neighboring
atoms upon one another are Sub-Energy
Levels.

Lecture delivered @ HITEC UNIVERSITY, Taxila, by Atif M. Khokhar 7


A group of energy sub-levels
(permissible) where they are so close
that they appear to be continuous, is
called Energy bands.

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Lecture delivered @ HITEC UNIVERSITY, Taxila, by Atif M. Khokhar
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A band which is either vacant or
partially filled is called conduction band.

 It is the upper most band of an


atom(Solid)

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Lecture delivered @ HITEC UNIVERSITY, Taxila, by Atif M. Khokhar
 The complete filled band is called
Valance band.

 It is the sandwich band of an


atom(Solis).

 The electrons are tightly bounded to


their nuclei in this band.
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Lecture delivered @ HITEC UNIVERSITY, Taxila, by Atif M. Khokhar
A band which can not accommodate
more electrons is called Filled band.

 It is the band lying below the valance


band of an atom

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Lecture delivered @ HITEC UNIVERSITY, Taxila, by Atif M. Khokhar
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Lecture delivered @ HITEC UNIVERSITY, Taxila, by Atif M. Khokhar
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Lecture delivered @ HITEC UNIVERSITY, Taxila, by Atif M. Khokhar
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Lecture delivered @ HITEC UNIVERSITY, Taxila, by Atif M. Khokhar
Bands in Solids

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Lecture delivered @ HITEC UNIVERSITY, Taxila, by Atif M. Khokhar
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Lecture delivered @ HITEC UNIVERSITY, Taxila, by Atif M. Khokhar
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Lecture delivered @ HITEC UNIVERSITY, Taxila, by Atif M. Khokhar
We usually don’t care about lower bands.
LASER will be formed by electrons going from conduction to valence band...
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Lecture delivered @ HITEC UNIVERSITY, Taxila, by Atif M. Khokhar
RIPHAH INTERNATIONAL
UNIVERSITY,ISLAMABAD, PAKISTAN 2/6/2008 24
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Lecture delivered @ HITEC UNIVERSITY, Taxila, by Atif M. Khokhar
RIPHAH INTERNATIONAL
UNIVERSITY,ISLAMABAD, PAKISTAN 2/6/2008 27
RIPHAH INTERNATIONAL
UNIVERSITY,ISLAMABAD, PAKISTAN 2/6/2008 28
The energy bands for the outermost electrons are qualitatively similar for carbon, silicon,
germanium and tin. Though they will differ in detail, the generic band diagram below can
show why these materials have different electrical properties.

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Lecture delivered @ HITEC UNIVERSITY, Taxila, by Atif M. Khokhar
Semiconductors

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Lecture delivered @ HITEC UNIVERSITY, Taxila, by Atif M. Khokhar
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Lecture delivered @ HITEC UNIVERSITY, Taxila, by Atif M. Khokhar
Silicon Energy Bands
At finite temperatures, the number of electrons which reach the
conduction band and contribute to current can be modeled by the
Fermi function. That current is small compared to that indoped
semiconductors under the same conditions.

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Germanium Energy Bands
At finite temperatures, the number of electrons which reach the conduction
band and contribute to current can be modeled by the Fermi function. That
current is small compared to that in doped semiconductors under the same
conditions.

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