SOT223 PNP SILICON PLANAR HIGH CURRENT

(HIGH PERFORMANCE) POWER TRANSISTOR

FZT968

ISSUE 3 OCTOBER 1995

FEATURES
* Extremely low equivalent on-resistance; RCE(sat) 44m at 5A
* 6 Amps continuous current (Up to 20 Amps peak )
* High gain and very low saturation voltage

TYPICAL CHARACTERISTICS
0.8

0.8

+25 C

I+/I*=50

0.6

0.6
I+/I*=250
I+/I*=200
I+/I*=100
I+/I*=50
I+/I*=10

0.4

10m

100m

10

10m

100m

VCE(sat) v IC

600
400

IC - Collector Current (A)

VCE(sat) v IC

V+-=1V

Collector-Emitter Voltage

VCEO

-12

VEBO

-6

ICM

-20

IC

-6

Ptot

Operating and Storage Temperature Range

-55 C
+25 C
+100 C

1.2

Tj:Tstg

-55 to +150

ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated)

+25 C

0.8

PARAMETER

MIN.

TYP.

V(BR)CBO

-15

-28

V(BR)CEO

-12

-20

IC=-10mA*

V(BR)EBO

0.4

SYMBOL

Breakdown Voltages

-55 C

Continuous Collector Current

+100 C

200

UNIT

-15

Power Dissipation at Tamb=25C

I+/I*=50

1.6

VALUE

VCBO

Emitter-Base Voltage

100

SYMBOL

Collector-Base Voltage

Peak Pulse Current

10

IC - Collector Current (A)

800

-6

-8

IE=-100A

nA

VCB=-12V
VCB=-12V, Tamb=100C

1m

10m

100m

10

-55 C
+25 C
+100 C

10

DC
1s
100ms
10ms
1ms
100s

ICBO
IEBO

-10

nA

VEB=-6V

Collector-Emitter Saturation
Voltage

0.7

Collector Cut-Off Current

Emitter Cut-Off Current

100

10

VCE(sat)

-65
-132
-360

-130
-170
-450

mV
mV
mV

IC=-500mA, IB=-5mA*
IC=-2A, IB=-50mA*
IC=-6A, IB=-250mA*

VBE(sat)

-1050

-1200

mV

IC=-6A, IB=-250mA*

VBE(on)

-870

-1050

mV

IC=-6A, VCE=-1V*

hFE

Transition Frequency

fT

80

Output Capacitance

Cobo
ton
toff

0.1
1

10

IC=-100A

Static Forward Current

Transfer Ratio

VBE(sat) v IC

V+-=1V

100m

CONDITIONS.

Base-Emitter
Turn-On Voltage

100m

100

10m

UNIT

Switching Times

10m

IC - Collector Current (A)

hFE v IC

1m

MAX.

Base-Emitter
Saturation Voltage

1m

100

IC - Collector Current (A)

1.4

PARAMETER
1m

100

ABSOLUTE MAXIMUM RATINGS.

0
1m

+100 C
+25 C
-55 C

0.2

PARTMARKING DETAIL FZT968

0.4

0.2

FZT968

100

IC - Collector Current (A)

0.1

10

VCE - Collector Emitter Voltage (V)

VBE(on) v IC

Safe Operating Area

3 - 295

100

-10
-1.0

300
300
200
150

450
450
300
240
50

IC=-10mA, VCE=-1V*
IC=-500mA, VCE=-1V*
IC=-5A, VCE=-1V*
IC=-10A, VCE=-1V*
IC=-20A, VCE=-1V*

1000

MHz

IC=-100mA, VCE=-10V
f=50MHz

161

pF

VCB=-20V, f=1MHz

120
116

ns
ns

IC=-4A, IB1=-400mA
IB2=400mA, VCC=-10V

*Measured under pulsed conditions. Pulse width=300s. Duty cycle 2%

Spice parameter data is available upon request for this device
3 - 294

SOT223 PNP SILICON PLANAR HIGH CURRENT

(HIGH PERFORMANCE) POWER TRANSISTOR

FZT968

ISSUE 3 OCTOBER 1995

FEATURES
* Extremely low equivalent on-resistance; RCE(sat) 44m at 5A
* 6 Amps continuous current (Up to 20 Amps peak )
* High gain and very low saturation voltage

TYPICAL CHARACTERISTICS
0.8

0.8

+25 C

I+/I*=50

0.6

0.6
I+/I*=250
I+/I*=200
I+/I*=100
I+/I*=50
I+/I*=10

0.4

10m

100m

10

10m

100m

VCE(sat) v IC

600
400

IC - Collector Current (A)

VCE(sat) v IC

V+-=1V

Collector-Emitter Voltage

VCEO

-12

VEBO

-6

ICM

-20

IC

-6

Ptot

Operating and Storage Temperature Range

-55 C
+25 C
+100 C

1.2

Tj:Tstg

-55 to +150

ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated)

+25 C

0.8

PARAMETER

MIN.

TYP.

V(BR)CBO

-15

-28

V(BR)CEO

-12

-20

IC=-10mA*

V(BR)EBO

0.4

SYMBOL

Breakdown Voltages

-55 C

Continuous Collector Current

+100 C

200

UNIT

-15

Power Dissipation at Tamb=25C

I+/I*=50

1.6

VALUE

VCBO

Emitter-Base Voltage

100

SYMBOL

Collector-Base Voltage

Peak Pulse Current

10

IC - Collector Current (A)

800

-6

-8

IE=-100A

nA

VCB=-12V
VCB=-12V, Tamb=100C

1m

10m

100m

10

-55 C
+25 C
+100 C

10

DC
1s
100ms
10ms
1ms
100s

ICBO
IEBO

-10

nA

VEB=-6V

Collector-Emitter Saturation
Voltage

0.7

Collector Cut-Off Current

Emitter Cut-Off Current

100

10

VCE(sat)

-65
-132
-360

-130
-170
-450

mV
mV
mV

IC=-500mA, IB=-5mA*
IC=-2A, IB=-50mA*
IC=-6A, IB=-250mA*

VBE(sat)

-1050

-1200

mV

IC=-6A, IB=-250mA*

VBE(on)

-870

-1050

mV

IC=-6A, VCE=-1V*

hFE

Transition Frequency

fT

80

Output Capacitance

Cobo
ton
toff

0.1
1

10

IC=-100A

Static Forward Current

Transfer Ratio

VBE(sat) v IC

V+-=1V

100m

CONDITIONS.

Base-Emitter
Turn-On Voltage

100m

100

10m

UNIT

Switching Times

10m

IC - Collector Current (A)

hFE v IC

1m

MAX.

Base-Emitter
Saturation Voltage

1m

100

IC - Collector Current (A)

1.4

PARAMETER
1m

100

ABSOLUTE MAXIMUM RATINGS.

0
1m

+100 C
+25 C
-55 C

0.2

PARTMARKING DETAIL FZT968

0.4

0.2

FZT968

100

IC - Collector Current (A)

0.1

10

VCE - Collector Emitter Voltage (V)

VBE(on) v IC

Safe Operating Area

3 - 295

100

-10
-1.0

300
300
200
150

450
450
300
240
50

IC=-10mA, VCE=-1V*
IC=-500mA, VCE=-1V*
IC=-5A, VCE=-1V*
IC=-10A, VCE=-1V*
IC=-20A, VCE=-1V*

1000

MHz

IC=-100mA, VCE=-10V
f=50MHz

161

pF

VCB=-20V, f=1MHz

120
116

ns
ns

IC=-4A, IB1=-400mA
IB2=400mA, VCC=-10V

*Measured under pulsed conditions. Pulse width=300s. Duty cycle 2%

Spice parameter data is available upon request for this device
3 - 294