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Section 2.7 :
Ex. 2.7.4 : The resistivity of intrinsic silicon is 3 10
5
-cm at 30
! "-sec. at 30
C
. # = 0.05 m
! "-sec at 30
C or 303
K :
To calculate ni at 303
K ...(3)
Step 2 : Intrinsic concentration at 100C or 373K :
To calculate ni at 3(3
K
and T1 = 303
K
5irst of all let us calculate 6+o7 89 su8stituting the te#perature to 8e 303
K.
( ni )
%
= +o e
! ),- . /T%
+nita : ;:<%013<,u=arat<Katre<Basic )lectronics>,-%%+ (?ith @;)<@; )Aa#ples<chp%<
@hapB%.doc 2
nd
proof
$asic %lectronics &'T() - Trans#ort *henomena in +emiconductors
:u8stituting the alues we get'
( ni )
%
= ".3( 10
$$
(3(3)
3
e
! ( 1.%1 . 3."% 10! 4 3(3 )
= 1.$*( 10
3"
ni = 1.%%3 10
13
per #
3
...Ans.
This is the intrinsic concentration at 100
@ or 3(3
K.
Ex. 2.7.5 : A ,ar of intrinsic silicon having a cross-sectional area of .5 10
- .
m
has an electron
density of 1.5 10
1/
electrons!m
3
. 0f the electron mo,ility is 0.1. m
! "-sec1 what is the length of the ,ar in order to have a current of 1. mA when 2
"olts are a##lied across its ends 3 .Page No. 2-25.
Soln. :
Given : 1. + = %.4 10
! $
#
%
%. n = 1.4 10
1"
. #
3
3. n = 0.1$ #
%
. 0Bs and p = 0.04 #
%
. 0Bs $. C = 1.% #+' 0 = * 0olts
Step 1 : Conductivity of the intrinsic silicon :
+s we /now' the conductiit9 of intrinsic silicon is gien 89 :
i = ni (n + p ) q ...(1)
5or an intrinsic se#iconductor
n = p = ni
ni = 1.4 10
1"
. #
3
...(%)
:u8stituting the alues into )quation (1) we get'
i = 1.4 10
1"
(0.1$ + 0.04) 1." 10
! 1*
i = $.4" 10
! $
( ! #)
! 1
...(3)
Step 2 : esistivity of the intrinsic silicon :
Desistiit9' i = ...($)
:u8stituting the alue of i fro# )quation (3) we get'
i =
i = %1*3 ! # ...(4)
Step 3 : !en"th #l$ of the se%iconductor &ar :
Desistance of the se#iconductor 8ar = = = (400 ...(")
+nd eApression for resistance is D = ...(()
:u8stituting the alues we get (400 =
l = 3.44 10
! $
#. = 0.344 ## ...Ans.
Ex. 2.7. : Calculate the intrinsic carrier concentration of +ilicon and 'ermanium at .00
4.
.Page No. 2-25.
Soln. : The alue of +o and ),- for the :ilicon and ,er#aniu# are as follows :
'aterial (alue of Ao )G*
$asic %lectronics &'T() -3 Trans#ort *henomena in +emiconductors
:ilicon %.(34 10
31
1.1 e0
,er#aniu# %.(44 10
30
0.(34 e0
/ = 3."% 10
! 4
e0 .
K and T = $00
K
?e /now that = +o T
3
e
! ),- . /T
1. +or Silicon :
= %.(34 10
31
($00)
3
e
! 1.1 . 3."% 10! 4 $00
= %.$$ 10
%4
ni = $.*$ 10
1%
per #
3
... Ans.
2. +or Ger%aniu% :
= %.(44 10
30
($00)
3
e
! 0.(34 . 3."% 10! 4 $00
= %.%3$4 10
%3
ni = 1.41 10
1$
per #
3
... Ans.
Comment :
+t the sa#e te#perature' the intrinsic carrier concentration of ,er#aniu# is higher than that
of silicon.
Ex. 2.7.7 : The intrinsic concentration of +ilicon at .00
4 is ..2. 10
1
! m
3
. Calculate its carrier
concentration at 500
K
T% = 400
K and K = 3."% 10
! 4
e0 .
K
,o +ind : ni% at 400
K
?e /now that'
= +o T
3
e
! ),- . /T
...(1)
:o
( ni1 )
%
= +o e
! ),- . /T1
...(%)
and ( ni% )
%
= +o e
! ),- . /T%
...(3)
;iide )quation (3) 89 )quation (%) to get'
=
=
= %131.*3*
( ni% )
%
= %131.*3* ( ni1 )
%
= %131.*3* ( $.*$ 10
1%
)
%
= 4.3%$3 10
%3
ni% = %.30(4 10
1$
. #
3
...Ans.
Comment :
The alue of ni% shows that the intrinsic concentration increases with increase in te#perature.
$asic %lectronics &'T() -. Trans#ort *henomena in +emiconductors
Section 2.! :
Ex. 2.!.2 : A sam#le of germanium is do#ed with 10
1.
! cm
3
of donor im#urity and 6 10
13
! cm
3
of
acce#tor im#urity. 7esistivity of #ure 'e is /0 ohms-cm at room tem#erature. 0f the total
current density of the sam#le is 5 mA!cm
! "-sec1 # = 500 cm
! "-sec1
# = 0.05 m
! "-sec1 ni = 1.5 10
10
! cm
3
. .Page No. 2-"#.
Soln. :
Given : l = 0.1 c# = 1 10
! 3
#' D = 1.4 /' n = 0.1$ #
%
. 0Bsec.
+ = 3 10
! 3
#
%
p = 0.04 #
%
. 0Bsec. ni = 1.4 10
10
. c#
3
The #a=orit9 carrier densit9 ( E; ) as the phosphorous is a donor i#purit9 can 8e calculated fro#
the following equation :
n = nn n q
$asic %lectronics &'T() -6 Trans#ort *henomena in +emiconductors
-D
n = E; n q ...(1)
?e do not /now n so let us calculate it.
To o8tain n we will hae to calculate resistiit9 n.
Step 1 : ,o o&tain the value of resistivity -n / :
Desistance' D =
n =
:u8stituting the alues we get'
n = = 0.1% B# ...(%)
Step 2 : ,o o&tain the value of conductivity - n / :
n = = = 3.33 (B#)
! 1
...(3)
Step 3 : ,o o&tain the value of 01 :
5ro# )quation (1) we can write that'
E; =
:u8stituting the alues we get'
E; = = 3.(1* 10
%0
. #
3
...Ans.
Ex. 2.!.5 : =ind the resistivity of intrinsic silicon. :hat will ,e the resistivity when the silicon is do#ed
with a #entavalent im#urity to the e9tent of 1 im#urity atom for each 10
8
atoms of silicon 3
'iven for silicon :
1. >um,er of silicon atoms #er cm
3
= 5 10
. 0ntrinsic carrier concentration = 1.5 10
10
! cm
3
= 1.5 10
1/
! m
3
3. %lectron charge = 1./ 10
- 12
Coulom,.
.. %lectron mo,ility = 0.135 m
! "-s.
7esistivity of intrinsic silicon and after do#ing is to ,e o,tained. .Page No. 2-"$.
Soln. :
Step 1 : esistivity of intrinsic silicon :
The conductiit9 of intrinsic silicon is gien 89'
i = ni ( n + p ) q ...(1)
$asic %lectronics &'T() -8 Trans#ort *henomena in +emiconductors
:u8stituting the alues we get'
i = 1.4% 10
1"
(0.134 + 0.0$3) 1." 10
! 1*
i = $.$4 10
! $
( B#)
! 1
...(%)
Desistiit9 of the intrinsic silicon = i = = = %%$(.% B# ...Ans.
Step 2 : esistivity of doped silicon :
Deferring to )quation (%.3.1$) we can write that the conductiit9 of an 6n7Bt9pe se#iconductor is
gien 89'
n = E; n q ...(3)
This equation has 8een written with an assu#ption that the concentration of electrons in an
nBt9pe se#iconductor is #uch higher than that of the holes.
The nu#8er of i#purit9 ato#s is 1 in 10
3
.
Therefore the nu#8er of i#purit9 (donor) ato#s in 4 10
%%
silicon ato#s is gien 89'
E; = = 4 10
1$
. c#
3
@onert it into ato#s.#
3
as'
E; = 4 10
1$
10
"
. #
3
E; = 4 10
%0
. #
3
...($)
:u8stituting this alue in )quation (3) we get'
n = 4 10
%0
0.134 1." 10
! 1*
= 10.3 (B#)
! 1
Therefore resistiit9 of doped silicon is gien 89'
n = = = 0.0*%4* = *%.4* 10
! 3
B#.
n = *%.4* 10
! 3
B# ...Ans.
Ex. 2.!. : A donor im#urity is added to intrinsic silicon and the resistivity at room tem#erature is
o,served to ,e 2./ -cm. Calculate the ratio of donor atoms to silicon atoms #er unit
volume. Assume n as 1300 cm
! "-s
Ao,ility for electrons = 3800 cm
! "-s
Charge on an electron = 1./ 10
- 12
C .Page No. 2-"$.
Soln. : The conductiit9 of an intrinsic se#iconductor is gien 89'
i = ni (n + p ) q ...(1)
To o8tain the resistiit9 of the intrinsic ger#aniu#' we need to calculate its conductiit9.
:u8stitute the alues into )quation (1) to get'
i = %.4 10
13
(3300 + 1300) 1." 10
! 1*
= 0.0%%$ (Bc#)
! 1
The resistiit9 is gien 89'
i = = = $$."$ (Bc# ) $4 Bc#. ...Ans.
&ence proed.
Ex. 2.!.! : A ,ar of silicon has intrinsic concentration of 1. 10
1/
#er m
3
. The silicon is so do#ed that
the hole concentration ,ecomes 10
#er m
3
. @etermine :
1. %lectron concentration of do#ed silicon
. Conductivity of do#ed silicon
3. Ty#e of resulting silicon &# or n ty#e)
'iven : n = 1350 cm
! "-sec1 # = 500 cm
.
'iven : =or +i at 300
41 ni = 1.5 10
10
! cm
3
.
n = 1300 cm
! "-sec1 # = 500 cm
! "-sec # = 1800 cm
! "-sec
ni = .5 10
13
! cm
3
Atoms #er cm
3
for 'e = ... 10
C.
1. Calculate electron and hole concentrations.
. 0f e9cess holes and electrons are generated with concentrations of
# = n = 10
1.
cm
- 3
1 determine the total concentrations of holes and electrons.
3. =or the same semiconductor sam#le with e9cess charge carriers1 calculate current
flowing through it if the voltage a##lied across its length is ".
'or silicon :
ni = 1.5 10
10
cm
- 3
n = 1.00 cm
! "-sec # = 500 cm
@ or 300
K
:ince Ed NN ni we assu#e that the electron concentration n Ed
n = Ed = 3 10
14
electrons per c#
3
...Ans.
Msing the law of #ass action we can write'
= n p
&ole concentration p = =
p = %.31%4 10
$
holes per c#
3
...Ans.
3art II : ,otal concentration of electrons and holes :
;ue to the eAcess holes and electrons' the electron and hole concentrations are'
nT = Ed + n = ( 3 10
14
) + 10
1$
= 3.1 10
14
c#
! 3
and pT = p + p
= ( %.31%4 10
$
) + 10
1$
= 1 10
1$
c#
! 3
$asic %lectronics &'T() -13 Trans#ort *henomena in +emiconductors
3art III : Calculate current :
Given : 0oltage across the se#iconductor = % 0.
Step 1 : Calculate conductivity :
@onductiit9 = ( nT n + pT p ) q
= K (3.1 10
14
1$00) + (1 10
1$
400) L 1." 10
! 1*
= 1.3%%$ (Bc#)
! 1
Step 2 : Calculate resistivity and resistance :
Desistiit9 = = 0.4$3( (Bc#)
Desistance D = = 0.4$3( (Bc#)
D = 4$.3(
Step 3 : Calculate current I :
C = = = 0.03"$$ +#p
= 3".$$ #+ ...Ans.
Ex. 2.!.$" : A silicon sam#le is non-uniformly do#ed with donor im#urity of 10
1.
m
- 3
. A current density of
10 mA ! cm
is generated when electric field of 3"!cm is a##lied across it. =ind the
concentration gradient at 6
C.
'iven : n = 1500 cm
1
d = 5 mm and % = 5 "!cm. :hat is the magnitude of ?all voltage "? 3 .Page No. 2-"5.
Soln. :
?e /now that the &all oltage 0& is gien 89'
$asic %lectronics &'T() -1. Trans#ort *henomena in +emiconductors
0& = ...(1)
Step 1 : ,o o&tain the char"e density #$ :
@harge densit9 67 = n q = E; q
= 10
13
1." 10
! 1*
= 1." 10
! "
@. c#
3
...(%)
Step 2 : ,o o&tain the value of current density #.$ :
Deferring to )quation (%.*.$) we can write that'
F = ...(3)
:u8stituting = ;rift elocit9 = n ) we get'
F = n )
+ssu#ing n = 1300 c#
%
. 0Bsec we get'
F = 1." 10
! "
1300 4 = 0.010$ +#p . c#
%
...($)
Step 3 : ,o o&tain the hall volta"e (4 :
:u8stitute )quations (%) and ($) into )quation (1) and su8stitute the alues of 6B7 and 6d7 into
)quation (1).
B = 0.% ?8 . #
%
= 0.% 10
! $
?8.c#
%
and d = 4 ## = 4 10
! 1
c#
0& =
0& = 0.0"4 olts or "4 #0 ...Ans.
Ex. 2.%.2 : The ?all e9#eriment is used for a silicon ,ar <nown to ,e #-ty#e. The resistivity of the ,ar is
0 10
3
-cm . :idth of the ,ar is mm and distance ,etween the two surfaces of the ,ar
is . mm. The magnetic field used has intensity of 0.1 :,!m
O(%)