PD-97270 RevA

IRAM136-3023B
Series
30A, 150V
Integrated Power Hybrid IC for
Low Voltage Motor Applications
with Internal Shunt Resistor
Description
International Rectifier's IRAM136-3023B is a 30A, 150V Integrated Power Hybrid IC with Internal Shunt
Resistor for low voltage Motor Drives applications such as electric vehicles, portable power tools and light
industrial applications. IR's technology offers an extremely compact, high performance AC motor-driver in a
single isolated package to simplify design.
This advanced HIC is a combination of IR's low R
DS(on)
Advance Planar MOSFET Super Rugged technology
and the industry benchmark 3-Phase high voltage, high speed driver in a fully isolated thermally enhanced
package. A built-in temperature monitor and over-current and over-temperature protections and integrated
under-voltage lockout function, deliver high level of protection and fail-safe operation. Using a new
developed single in line package (SiP3) with heat spreader for the power die along with full transfer mold
structure minimizes PCB space and resolves isolation problems to heatsink.
Features
Integrated Gate Drivers
Temperature Monitor and Protection
Overcurrent shutdown
Low R
DS
(on) Advance Planar Super Rugged Technology
Undervoltage lockout for all channels
Matched propagation delay for all channels
5V Schmitt-triggered input logic
Cross-conduction prevention logic
Lower di/dt gate driver for better noise immunity
Motor Power up to 4.0kW / 48~100 Vdc
Fully Isolated Package, Isolation 2000V
RMS
min
Absolute Maximum Ratings
Parameter Description Value Units
V
BR(DSS)
MOSFET Blocking Voltage 150
V
+
Positive Bus Input Voltage 100
I
O
@ T
C
=25C RMS Phase Current (Note 1) 30
I
O
@ T
C
=100C RMS Phase Current (Note 1) 15
I
O
Pulsed RMS Phase Current (Note 1 and 2) 56
F
PWM
PWM Carrier Frequency 20 kHz
P
D
Power Dissipation per MOSFET @ T
C
=25C 89 W
V
ISO
Isolation Voltage (1min) 2000 V
RMS
T
J
(MOSFET & IC) Maximum Operating Junction Temperature +150
T
C
Operating Case Temperature Range -20 to +100
T
STG
Storage Temperature Range -40 to +125
T Mounting Torque (M4 screw) 0.7 to 1.17 Nm
Note 1: Sinusoidal modulation at V
+
=100V, T
J
=150C, F
PWM
=20kHz, modulation depth=0.8, pf=0.6, see Figure 3
V
A
C
Note 2: t
P
<100ms; T
C
=25C; F
PWM
=20kHz, limited by I
BUS-TRIP
, see Table "Inverter Section Electrical Characteristics"
www.irf.com 1
IRAM136-3023B
Internal Electrical Schematic IRAM136-3023B
23 VS1
24 HO1
25 VB1
1 VCC
2 HIN1
3 HIN2
4 HIN3
5 LIN1
LIN2
6
LIN3
7
F
8
ITRIP
9
EN
10
RCIN
11
VSS
12
COM
13
22
VB2
21
HO2
20
VS2
19
VB3
18
HO3
17
VS3
V
-
(12)
VB1 (1)
U, VS1 (2)
VB2 (4)
V, VS2 (5)
VB3 (7)
W, VS3 (8)
V
CC
(21)
V
SS
(22)
R
9
R
8
R
1
R
2
R
3
IC1
LO1 16
LO3 14
LO2 15
R
4
R
5
R
6
I
TRIP
(20)
V
+
(10)
C
6
C
5
F/T
MON
(19)
HIN1 (13)
HIN2 (14)
HIN3 (15)
LIN1 (16)
LIN2 (17)
LIN3 (18)
THERMISTOR
R
7 R
13
R
12
R
14
R
11
C
7
POSISTOR
R
10A,B,C,D,E,F
R
15
Q
7
Q
1
Q
4
Q
2 Q
3
Q
5 Q
6
D
15
D
14
D
13
C
4
C
3
C
2
C
1

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IRAM136-3023B
Absolute Maximum Ratings (Continued)
Symbol Parameter Min Max Units
I
BDF
Bootstrap Diode Peak Forward
Current
--- 4.5 A
P
BR Peak
Bootstrap Resistor Peak Power
(Single Pulse)
--- 25.0 W
V
S1,2,3
High side floating supply offset
voltage
V
B1,2,3
- 25 V
B1,2,3
+0.3 V
V
B1,2,3
High side floating supply voltage -0.3 150 V
V
CC
Low Side and logic fixed supply
voltage
-0.3 20 V
V
IN
Input voltage LIN, HIN, I
Trip
-0.3
Lower of
(V
SS
+15V) or
V
CC
+0.3V
V
Conditions
t
P
= 10ms,
T
J
= 150C, T
C
=100C
t
P
=100s, T
C
=100C



Inverter Section Electrical Characteristics @T
J
= 25C
Symbol Parameter Min Typ Max Units
V
(BR)DSS
Drain-to-Source Breakdown
Voltage
150 --- --- V
V
(BR)DSS
/ T
Temperature Coeff. Of
Breakdown Voltage
--- 0.16 --- V/C
--- 38 80
--- 65 122
--- 3 80
--- 8 ---
--- 1.2 1.9
--- 1.0 1.8
-- -- 1.25
--- --- 1.10
R
BR
Bootstrap Resistor Value --- 22 ---
R
BR
/R
BR
Bootstrap Resistor Tolerance --- --- 5 %
I
BUS_TRIP
Current Protection Threshold
(positive going)
56 --- 68 A
T
J
=25C
T
J
=25C
See Figure 2
V
BDFM
Bootstrap Diode Forward
Voltage Drop
V
I
F
=1A
I
F
=1A, T
J
=125C
V
IN
=5V, V
+
=150V, T
J
=125C
V
SD
Body Diode Forward Voltage
Drop
V
I
D
=15A
I
D
=15A, T
J
=125C
I
DSS
Zero Gate Voltage Drain Current A
V
IN
=5V, V
+
=150V
Conditions
V
IN
=5V, I
D
=250A
V
IN
=5V, I
D
=1.0mA
(25C - 150C)
R
DS(ON)
Drain-to-Source On Resistance m
I
D
=15A, V
CC
=15V
I
D
=15A, V
CC
=15V, T
J
=125C

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IRAM136-3023B
Inverter Section Switching Characteristics @ T
J
= 25C
Symbol Parameter Min Typ Max Units
E
ON Turn-On Switching Loss
1/
--- 395 1100
E
OFF Turn-Off Switching Loss
1/
--- 135 250
E
TOT Total Switching Loss
1/
--- 530 1350
E
REC Diode Reverse Recovery energy
1/
--- 210 1000
t
RR Diode Reverse Recovery time
1/
--- 240 --- ns
E
ON Turn-on Swtiching Loss
1/
--- 360 970
E
OFF Turn-off Switching Loss
1/
--- 115 210
E
TOT Total Switching Loss
1/
--- 475 1180
E
REC Diode Reverse Recovery energy
1/
--- 230 1000
t
RR Diode Reverse Recovery time
1/
--- 270 --- ns
Q
G Turn-On FET Gate Charge
1/
--- 60 89 nC
E
AS
Single Pulse Avalanche Energy --- --- 470 mJ
I
AR
Avalanche Current --- --- 36 A
E
AR
Repetitive Avalanche Energy --- --- 32 mJ
Note 3: Starting T
J
= 25C, L = 0.72mH, R
G
= 25, I
AS
= 36A
Note 4: This is only applied to TO-220AB package
1/
Based on Characterization Data only. Not subject to production test.
Conditions
J
I
D
=15A, V
+
=100V
V
CC
=15V, L=2mH
Energy losses include "tail" and
diode reverse recovery
See CT1
J
I
D
=15A, V
+
=100V
V
CC
=15V, L=2mH, T
J
=125C
Energy losses include "tail" and
diode reverse recovery
See CT1
I
D
=36A, V
+
=75V, V
GS
=10V
Note 3, 4
Repetitive rating; pulse width
limited by max. junction
temperature. (Note 4)



Recommended Operating Conditions Driver Function
Symbol Definition Min Max Units
V
B1,2,3
High side floating supply voltage V
S
+10 V
S
+20
V
S1,2,3
High side floating supply offset voltage Note 6 150
V
CC
Low side and logic fixed supply voltage 12 20 V
V
IN
Logic input voltage LIN, HIN V
SS
V
SS
+5 V
Note 5: For more details, see IR2136 data sheet
The Input/Output logic timing diagram is shown in Figure 1. For proper operation the device should be used within the
recommended conditions. All voltages are absolute referenced to COM/I
TRIP
. The V
S
offset is tested with all supplies
biased at 15V differential (Note 5).
V
Note 6: Logic operational for V
s
from COM-5V to COM+150V. Logic state held for V
s
from COM-5V to COM-V
BS
.
(please refer to DT97-3 for more details)


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IRAM136-3023B
Static Electrical Characteristics Driver Function @ T
J
= 25C
Symbol Definition Min Typ Max Units
V
IH
Logic "0" input voltage 3.0 --- --- V
V
IL
Logic "1" input voltage --- --- 0.8 V
V
CCUV+,
V
BSUV+
V
CC
and V
BS
supply undervoltage positive going threshold 8.0 8.9 9.8 V
V
CCUV-,
V
BSUV-
V
CC
and V
BS
supply undervoltage negative going threshold 7.4 8.2 9.0 V
V
CCUVH,
V
BSUVH
V
CC
and V
BS
supply undervoltage lock-out hysteresis 0.3 0.7 --- V
V
IN,Clamp
Input Clamp Voltage (HIN, LIN, T/I
TRIP
) I
IN
=10A 4.9 5.2 5.5 V
I
QBS
Quiescent V
BS
supply current V
IN
=0V --- --- 165 A
I
QCC
Quiescent V
CC
supply current V
IN
=0V --- --- 3.35 mA
I
LK
Offset Supply Leakage Current --- --- 60 A
I
IN+
Input bias current V
IN
=5V --- 200 300 A
I
IN-
Input bias current V
IN
=0V --- 100 220 A
I
TRIP+
I
TRIP
bias current V
ITRIP
=5V --- 30 100 A
I
TRIP-
I
TRIP
bias current V
ITRIP
=0V --- 0 1 A
V(I
TRIP
) I
TRIP
threshold Voltage 440 490 540 mV
V(I
TRIP
,HYS) I
TRIP
Input Hysteresis --- 70 --- mV
V
BIAS
(V
CC
, V
BS1,2,3
)=15V, unless otherwise specified. The V
IN
and I
IN
parameters are referenced to V
SS
and are
applicable to all six channels (Static Electrical Characteristics are Based on Driver IC Data Sheet, Note 5).


Dynamic Electrical Characteristics @ T
J
= 25C
Symbol Parameter Min Typ Max Units Conditions
T
ON
Input to Output propagation turn-
on delay time (see fig.11)
2/
--- 0.83 --- s
T
OFF
Input to Output propagation turn-
off delay time (see fig. 11)
2/
--- 1.08 --- s
T
FLIN Input Filter time (HIN, LIN)
3/
100 200 --- ns V
IN
=0 & V
IN
=5V
T
BLT-Trip I
TRIP
Blancking Time
3/
100 150 --- ns V
IN
=0 & V
IN
=5V
D
T Dead Time (V
BS
=V
DD
=15V)
3/
220 290 360 ns V
BS
=V
CC
=15V
M
T
Matching Propagation Delay Time
(On & Off)
3/
--- 40 75 ns
V
CC
= V
BS
= 15V, external dead
time> 400ns
T
ITrip
I
Trip
to six switch to turn-off
propagation delay (see fig. 2)
4/
--- 3.2 --- s
V
CC
=V
BS
= 15V, I
D
=30A,
V
+
=100V
--- 7.7 --- T
C
= 25C
--- 6.7 --- T
C
= 100C
2/
Based on Characterization Data only. Not subject to production test.
3/
Based on Driver IC Data Sheet.
4/
Verified by Design. Not subject to production test.
V
CC
=V
BS
= 15V, I
D
=30A,
V
+
=100V
T
FLT-CLR
Post I
Trip
to six switch to turn-off
clear time (see fig. 2)
4/
ms
www.irf.com 5
IRAM136-3023B
Thermal and Mechanical Characteristics
Symbol Parameter Min Typ Max Units Conditions
R
th(J-C) Thermal resistance, FET
5/
--- 1.2 1.4
R
th(C-S) Thermal resistance, C-S
5/
--- 0.1 ---
C
D
Creepage Distance 3.5 --- --- mm See outline Drawings
5/
Based on Characterization Data only. Not subject to production test.
C/W
Flat, greased surface. Heatsink
compound thermal conductivity
1W/mK


Internal Current Sensing Resistor - Shunt Characteristics
Symbol Parameter Min Typ Max Units Conditions
R
Shunt
Resistance 8.1 8.3 8.5 m T
C
= 25C
T
Coeff
Temperature Coefficient 0 --- 200 ppm/C
P
Shunt
Power Dissipation --- --- 4.5 W -40C< T
C
<100C
T
Range
Temperature Range -20 --- 125 C


Internal NTC - Thermistor Characteristics
Parameter Definition Min Typ Max Units Conditions
R
25
Resistance 97 100 103 k T
C
= 25C
R
125 Resistance
6/
2.25 2.52 2.80 k T
C
= 125C
B B-constant (25-50C)
6/
4165 4250 4335 k R
2
= R
1
e
[B(1/T2 - 1/T1)]
Temperature Range -20 --- 125 C
Typ. Dissipation constant --- 1 --- mW/C T
C
= 25C
6/
Verified by Design. Not subject to production test.


Input-Output Logic Level Table
I
TRIP
U,V,W
0 0 1 V
+
0 1 0 0
0 1 1 X
1 X X X
Ho
Lo
U,V,W
IC
Driver
V
+
Hin1,2,3
Lin1,2,3
(13,14,15)
(16,17,18)
(2,5,8)
HIN1,2,3 LIN1,2,3

6 www.irf.com
IRAM136-3023B

Figure 1. Input/Output Timing Diagram

I
TRIP
LIN1,2,3
HIN1,2,3
T
FLT-CLR
50%
50%
U,V,W
50%
T
ITRIP
50%


Figure 2. I
TRIP
Timing Waveform

Note 7: The shaded area indicates that both high-side and low-side switches are off and therefore the half-
bridge output voltage would be determined by the direction of current flow in the load.

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IRAM136-3023B
Module Pin-Out Description
Pin Name Description
1 V
B1
High Side Floating Supply Voltage 1
2 U, V
S1
Output 1 - High Side Floating Supply Offset Voltage
3 NA none
4 V
B2
High Side Floating Supply voltage 2
5 V,V
S2
Output 2 - High Side Floating Supply Offset Voltage
6 NA none
7 V
B3
High Side Floating Supply voltage 3
8 W,V
S3
Output 3 - High Side Floating Supply Offset Voltage
9 NA none
10 V
+
Positive Bus Input Voltage
11 NA none
12 V- Negative Bus Input Voltage
13 H
IN1
Logic Input High Side Gate Driver - Phase 1
14 H
IN2
Logic Input High Side Gate Driver - Phase 2
15 H
IN3
Logic Input High Side Gate Driver - Phase 3
16 L
IN1
Logic Input Low Side Gate Driver - Phase 1
17 L
IN2
Logic Input Low Side Gate Driver - Phase 2
18 L
IN3
Logic Input Low Side Gate Driver - Phase 3
19 Fault/T
MON
Temperature Monitor and Fault Function
20 I
Sense
Current Monitor
21 V
CC
+15V Main Supply
22 V
SS
Negative Main Supply

8 www.irf.com
IRAM136-3023B
Typical Application Connection IRAM136-3023B

1
2
2
HIN3
HIN2
LIN1
LIN2
LIN3
HIN1
D
a
t
e

C
o
d
e

L
o
t

#
I
R
A
M
1
3
6
-
3
0
2
3
B
3-Phase AC
MOTOR
BOOT-STRAP
CAPACITORS
U
V
W
Vcc (15 V)
ITRIP
VSS
CONTROLLER
V
+
DC BUS
CAPACITORS
10m
0.1m
FLT/TMON
12kohm
+5V
+15V
V
-
VB1
VB2
VB3
+5V
IMonitor
Fault & Temp
Monitor
V
+


1. Electrolytic bus capacitors should be mounted as close to the module bus terminals as possible to reduce
ringing and EMI problems. Additional high frequency ceramic capacitor mounted close to the module pins
will further improve performance.
2. In order to provide good decoupling between VCC-VSS and VB1,2,3-VS1,2,3 terminals, the capacitors
shown connected between these terminals should be located very close to the module pins. Additional
high frequency capacitors, typically 0.1F, are strongly recommended.
3. Value of the boot-strap capacitors depends upon the switching frequency. Their selection should be
made based on IR design tip DN 98-2a, application note AN-1044 or Figure 9. Bootstrap capacitor value
must be selected to limit the power dissipation of the internal resistor in series with the VCC. (see
maximum ratings Table on page 3).
4. After approx. 8ms the FAULT is reset. (see Dynamic Characteristics Table on page 5).
5. PWM generator must be disabled within Fault duration to guarantee shutdown of the system, overcurrent
condition must be cleared before resuming operation.
6. Fault/T
MON
Monitor pin must be pulled-up to +5V.
www.irf.com 9
IRAM136-3023B
0
2
4
6
8
10
12
14
16
18
20
22
24
26
0 2 4 6 8 10 12 14 16 18 2
PWM Switching Frequency - kHz
M
a
x
i
m
u
m

O
u
t
p
u
t

P
h
a
s
e

R
M
S

C
u
r
r
e
n
t

-

A
0
T
C
= 80C
T
C
= 90C
T
C
= 100C

Figure 3. Maximum Sinusoidal Phase Current vs. PWM Switching Frequency
Sinusoidal Modulation, V
+
=100V, T
J
=150C, Modulation Depth=0.8, PF=0.6


0
2
4
6
8
10
12
14
16
18
20
1 10 100
Modulation Frequency - Hz
M
a
x
i
m
u
m

O
u
t
p
u
t

P
h
a
s
e

R
M
S

C
u
r
r
e
n
t

-

A
F
PWM
= 12kHz
F
PWM
= 16kHz
F
PWM
= 20kHz

Figure 4. Maximum Sinusoidal Phase Current vs. Modulation Frequency
Sinusoidal Modulation, V
+
=100V, T
J
=100C, Modulation Depth=0.8, PF=0.6
10 www.irf.com
IRAM136-3023B
0
20
40
60
80
100
120
140
160
180
200
220
240
0 2 4 6 8 10 12 14 16 18 2
PWM Switching Frequency - kHz
T
o
t
a
l

P
o
w
e
r

L
o
s
s
-

W
0
I
OUT
= 18A
I
OUT
= 15A
I
OUT
= 12A

Figure 5. Total Power Losses vs. PWM Switching Frequency
Sinusoidal Modulation, V
+
=100V, T
J
=150C, Modulation Depth=0.8, PF=0.6


0
50
100
150
200
250
300
350
0 2 4 6 8 10 12 14 16 18 20 22 2
Output Phase Current - A
RMS
T
o
t
a
l

P
o
w
e
r

L
o
s
s

-

W
4
F
PWM
= 20kHz
F
PWM
= 16kHz
F
PWM
= 12kHz

Figure 6. Total Power Losses vs. Output Phase Current
Sinusoidal Modulation, V
+
=100V, T
J
=150C, Modulation Depth=0.8, PF=0.6
www.irf.com 11
IRAM136-3023B
0
10
20
30
40
50
60
70
80
90
100
110
120
130
140
150
0 2 4 6 8 10 12 14 16 18 20 22 2
Output Phase Current - A
RMS
M
a
x

A
l
l
o
w
a
b
l
e

C
a
s
e

T
e
m
p
e
r
a
t
u
r
e

-

C
4
F
PWM
= 12kHz
F
PWM
= 16kHz
F
PWM
= 20kHz

Figure 7. Maximum Allowable Case Temperature vs. Output RMS Current per Phase
Sinusoidal Modulation, V
+
=100V, T
J
=150C, Modulation Depth=0.8, PF=0.6


102.3
100
110
120
130
140
150
160
65 70 75 80 85 90 95 100 105 110
Internal Thermistor Temperature Equivalent Read Out - C
M
O
S
F
E
T

J
u
n
c
t
i
o
n

T
e
m
p
e
r
a
t
u
r
e

-

C
T
J avg
= 1.4026 x T
Therm
+ 6.4583

Figure 8. Estimated Maximum MOSFET Junction Temperature vs. Thermistor Temperature
12 www.irf.com
IRAM136-3023B
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
-40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 100 110 120 130 140 150
Thermistor Temperature - C
T
h
e
r
m
i
s
t
o
r

P
i
n

R
e
a
d
-
O
u
t

V
o
l
t
a
g
e

-

V
Min
Avg.
Max
TTHERM RTHERM TTHERM RTHERM TTHERM RTHERM
C C C
-40 4397119 25 100000 90 7481
-35 3088599 30 79222 95 6337
-30 2197225 35 63167 100 5384
-25 1581881 40 50677 105 4594
-20 1151037 45 40904 110 3934
-15 846579 50 33195 115 3380
-10 628988 55 27091 120 2916
-5 471632 60 22224 125 2522
0 357012 65 18322 130 2190
5 272500 70 15184 135 1907
10 209710 75 12635 140 1665
15 162651 80 10566 145 1459
20 127080 85 8873 150 1282
+5V
EXT R
VTherm
RTherm

Figure 9. Thermistor Readout vs. Temperature (12Kohm pull-up resistor, 5V) and
Normal Thermistor Resistance values vs. Temperature Table.


0.0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
11.0
12.0
13.0
14.0
15.0
16.0
0 5 10 15 20
PWM Frequency - kHz
R
e
c
o
m
m
e
n
d
e
d

B
o
o
t
s
t
r
a
p

C
a
p
a
c
i
t
o
r

-

F15F
6.8F
4.7F
3.3F
10F
COM
Lo
Ho
Vs HIN H
HIN
L
Vcc
B V
SS V
BS C BS D
BS R
G1 R
G2 R
V
+
U,V,W
GND
HIN
H
+15V
HIN
L
SS V

Figure 10. Recommended Bootstrap Capacitor Value vs. Switching Frequency
www.irf.com 13
IRAM136-3023B
Figure 11. Switching Parameter Definitions
50%
H
IN
/L
IN
V
DS
I
D
H
IN
/L
IN
T
OFF
t
f
10% ID
50%
V
CE
V
DS
I
D
H
IN
/L
IN
T
ON
t
r
50%
H
IN
/L
IN
90% ID
10% ID
50%
V
DS
90% ID

Figure 11a. Input to Output propagation turn-on
delay time.
Figure 11b. Input to Output propagation turn-off
delay time.


Figure 11c. Diode Reverse Recovery.

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IRAM136-3023B



Figure CT1. Switching Loss Circuit

IN
IO

Figure CT2. S.C.SOA Circuit

IN
IO

Figure CT3. R.B.SOA Circuit
www.irf.com 15
IRAM136-3023B
Package Outline

IRAM136-3023B

P 4DB00

note2
note3
note4
Missing Pin : 3,6,9,11
note5
note1: Unit Tolerance is +0.5mm,
Unless Otherwise Specified.
note2: Mirror Surface Mark indicates Pin1 Identification.
note3: Part Number Marking.
Characters Font in this drawing differs from
Font shown on Module.
note4: Lot Code Marking.
Characters Font in this drawing differs from
Font shown on Module.
note5: P Character denotes Lead Free.
Characters Font in this drawing differs from
Font shown on Module.

Missing pins: 3, 6, 9, 11
TENTATIVE

For mounting instruction see AN-1049


Data and Specifications are subject to change without notice
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02/2008
16 www.irf.com