2SK168

Silicon N-Channel Junction FET

Application
VHF Amplifier, Mixer, Local oscillator
Outline
1. Gate
2. Source
3. Drain
TO-92 (2)
3
2
1
2SK168
2
Absolute Maximum Ratings (Ta = 25C)
Item Symbol Ratings Unit
Gate to drain voltage V
GDO
30 V
Gate to source voltage V
GSS
1 V
Gate current I
G
10 mA
Drain current I
D
20 mA
Channel power dissipation Pch 200 mW
Channel temperature Tch 150 C
Storage temperature Tstg 55 to +150 C
Electrical Characteristics (Ta = 25C)
Item Symbol Min Typ Max Unit Test conditions
Gate to drain breakdown
voltage
V
(BR)GDO
30 V I
G
= 100 A, I
S
= 0
Gate cutoff current I
GSS
10 nA V
GS
= 0.5 V, V
DS
= 0
Drain current I
DSS
*
1
4 20 mA V
DS
= 5 V, V
GS
= 0
Gate to source cutoff voltage V
GS(off)
3.0 V V
DS
= 5 V, I
D
= 10 A
Forward transfer admittance |y
fs
| 8 10 mS V
DS
= 5 V, V
GS
= 0, f = 1 kHz
Input capacitance Ciss 6.8 pF V
DS
= 5 V, V
GS
= 0, f = 1 MHz
Reverse transfer capacitance Crss 0.1 pF V
DS
= 5 V, V
GS
= 0, f = 1 MHz
Power gain PG 27 dB V
DS
= 5 V, V
GS
= 0,
f = 100 MHz
Noise figure NF 1.7 dB V
DS
= 5 V, V
GS
= 0,
f = 100 MHz
Note: 1. The 2SK168 is grouped by I
DSS
as follows.
D E F
4 to 8 6 to 12 10 to 20
2SK168
3
0
100
200
300
50
Ambient Temperature Ta (C)
C
h
a
n
n
e
l

P
o
w
e
r

D
i
s
s
i
p
a
t
i
o
n


P
c
h


(
m
W
)
Maximum Channel Power
Dissipation Curve
100 150
0
4
2
6
8
10
10 20
Drain to Source Voltage V
DS
(V)
D
r
a
i
n

C
u
r
r
e
n
t


I
D


(
m
A
)
Typical Output Characteristics (1)
30 40 50
1.0
0.8
0.6
0.4
0.2 V
V
GS
= 0
P
c
h

=

2
0
0

m
W
0
4
2
6
8
10
1 2
Drain to Source Voltage V
DS
(V)
D
r
a
i
n

C
u
r
r
e
n
t


I
D


(
m
A
)
Typical Output Characteristics (2)
3 4 5
0.4
0.6
0.8
1.0
0.2 V
V
GS
= 0
0
5
10
15
3.0 2.0
Gate to Source Voltage V
GS
(V)
D
r
a
i
n

C
u
r
r
e
n
t


I
D


(
m
A
)
Typical Transfer Characteristics
1.0 0
V
DS
= 5 V
F
E
D
2SK168
4
0
5
10
15
5
Drain to Source Voltage V
DS
(V)
F
o
r
w
a
r
d

T
r
a
n
s
f
e
r

A
d
m
i
t
t
a
n
c
e

y
f
s

(
m
S
)
Forward Transfer Admittance vs.
Drain to Source Voltage
10 15
V
GS
= 0
f = 1 kHz
Ta = 25C
25C
75C
0.5
5
2
1.0
50
20
0.5 1.0 2 0.2
Drain Current I
D
(mA)
F
o
r
w
a
r
d

T
r
a
n
s
f
e
r

A
d
m
i
t
t
a
n
c
e

y
f
s

(
m
S
)
Forward Transfer Admittance vs.
Drain Current
10 5 20
V
DS
= 5 V
f = 1 kHz
10
2
5
20
0.2 0.5 1.0 0.1
Drain to Source Voltage V
DS
(V)
I
n
p
u
t

C
a
p
a
c
i
t
a
n
c
e


C
i
s
s


(
p
F
)
Input Capacitance vs.
Drain to Source Voltage
5 2 10
V
GS
= 0
f = 1 MHz
10
0.05
0.5
0.2
0.1
5
0.2 0.5 1.0 0.1
Drain to Source Voltage V
DS
(V)
R
e
v
e
r
s
e

T
r
a
n
s
f
e
r

C
a
p
a
c
i
t
a
n
c
e


C
r
s
s


(
p
F
)
Reverse Transfer Capacitance vs.
Drain to Source Voltage
5 2 10
V
GS
= 0
f = 1 MHz
1.0
2
2SK168
5
2
20
10
5
200
0.2 0.5 1.0 0.1
Drain to Source Voltage V
DS
(V)
O
u
t
p
u
t

C
a
p
a
c
i
t
a
n
c
e


C
o
s
s


(
p
F
)
Output Capacitance vs.
Drain to Source Voltage
5 2 10
V
GS
= 0
f = 1 MHz
50
100
0
10
30
5
Drain to Source Voltage V
DS
(V)
P
o
w
e
r

G
a
i
n


P
G


(
d
B
)
Power Gain vs.
Drain to Source Voltage
10 15
V
GS
= 0
f = 100 MHz
20
0
10
30
4 6 8 10 2
Drain Current I
D
(mA)

P
o
w
e
r

G
a
i
n


P
G


(
d
B
)
Power Gain vs. Drain Current
14 12 16
V
DS
= 5 V
f = 100 MHz
V
GS
Variable
20
D
E F
4
2
8
4 8
Drain to Source Voltage V
DS
(V)
N
o
i
s
e

F
i
g
u
r
e


N
F


(
d
B
)
Noise Figure vs.
Drain to Source Voltage
12 16
V
GS
= 0
f = 100 MHz
6
0
2SK168
6
0.5
1.0
0.2
0.1
0.05
5
100 200
Frequency f (MHz)
I
n
p
u
t

A
d
m
i
t
t
a
n
c
e


y
i
s


(
m
S
)
O
u
t
p
u
t

A
d
m
i
t
t
a
n
c
e


y
o
s


(
m
S
)
Input and Output Admittance
vs. Frequency
500
y
is
= g
is
+jb
is
y
os
= g
os
+jb
os
V
DS
= 5 V
I
D
= 10 mA
g
is
g
os
b
is
10
b
os
10
2
50
5
10
20
50
2
1.0
0.5
100 200
Frequency f (MHz)
F
o
r
w
a
r
d

T
r
a
n
s
f
e
r

A
d
m
i
t
t
a
n
c
e


y
f
s


(
m
S
)
R
e
v
e
r
s
e

T
r
a
n
s
f
e
r

A
d
m
i
t
t
a
n
c
e


y
r
s


(
m
S
)
Transfer Admittance vs.
Frequency
500
V
DS
= 5 V
I
D
= 10 mA
y
fs
= g
fs
+jb
fs
y
rs
= g
rs
+jb
fs
g
fs
b
fs
10 b
rs
10 g
rs
50
1.0
0.5
0.2
2
5
0.1
0.05
2 5 10 20
Drain Current I
D
(mA)
I
n
p
u
t

A
d
m
i
t
t
a
n
c
e


y
i
s


(
m
S
)
O
u
t
p
u
t

A
d
m
i
t
t
a
n
c
e


y
o
s


(
m
S
)
Input and Output Admittance
vs. Drain Current
50
y
is
= g
is
+jb
is
y
os
= g
os
+jb
os
b
os
g
is
0.5 1.0
V
DS
= 5 V
f = 100 MHz
g
os
is Negligible
Small at This Frequency
b
is
10
10
5
2
20
50
1.0
0.5
2 5 10 20
Drain Current I
D
(mA)
F
o
r
w
a
r
d

T
r
a
n
s
f
e
r

A
d
m
i
t
t
a
n
c
e


y
f
s


(
m
S
)
R
e
v
e
r
s
e

T
r
a
n
s
f
e
r

A
d
m
i
t
t
a
n
c
e


y
r
s


(
m
S
)
Transfer Admittance vs.
Drain Current
50
y
fs
= g
fs
+jb
fs
y
rs
= g
rs
+jb
rs
b
fs
100 b
rs
100 g
rs
g
fs
0.5 1.0
V
DS
= 5 V
f = 100 MHz
2SK168
7
SG Output
Impedance
S.G.
50
50
V.V
5.4 3.0
V
DD
4,700
1,000
Shield
Power Gain and Noise Figure
Test Circuit
C
1
, C
2
: 0 to 30 pF Variable Air
L
1
: 3.5 T 1 mm Copper Ribbon, Tin plated 10 mm Inside dia.
L
2
: 4.5 T 1 mm Copper Ribbon, Tin plated 10 mm Inside dia.
C
1
C
2
D.U.T.
L
1
L
2
Unit R :
C : pF
0.60 Max
0.45 0.1
4.8 0.3 3.8 0.3
5
.
0

0
.
2
0
.
7
2
.
3

M
a
x
1
2
.
7

M
i
n
0.5
1.27
2.54
Hitachi Code
JEDEC
EIAJ
Weight (reference value)
TO-92 (2)
Conforms
Conforms
0.25 g
Unit: mm
Cautions
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traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
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5. This product is not designed to be radiation resistant.
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