ECE 461 Analog and Mixed Signal Design

Assignment 2
1. A linear three terminal network can be characterized in terms of y-parameters by the equations:
2 22 1 21 2
2 12 1 11 1
v y v y i
v y v y i
+ =
+ =

Obtain the corresponding small signal equivalent circuit.

2. Consider a real voltage source and a real current source. Show that the small signal Thevenin
equivalent circuits of both the circuits are the internal impedances of the voltage source and
current source respectively.

3. Develop a small signal model for a device characterized by the following equations:

+ =
=
5
1 ) 2 ( 25
) 4 ( 5
2 3
1 2
1 1
V
V I
V I


4. Derive an expression for MOSFET for the locus of points in the
DS D
V I plane where
0 =

DS
D
V
I
. Assume the MOSFET is modeled by usual level 1 model equations.

5. Assume a MOS device is to be modeled in the saturation region by the equation
( )
2
2
'
T GS D
V V
L
W K
I = but that the device is actually characterized by the
equation ( )

+ =
20
1
2
'
2
DS
T GS D
V
V V
L
W K
I , where
T
V is assumed to be constant in both the
equations. Also assume that the unknown parameters ' K and
T
V are to be experimentally obtained
from the first equation by measuring
D
I at
GS
V =2.0V and again at
GS
V =2.2V with
DS
V =2V and
then solving simultaneously the two versions of the first equation to obtain the two unknowns.
Further assume that W =5, L =15, and the measured values of
D
I are 6.336A and 8.624A
at 2.0V and 2.2V respectively.
(a) What values will be obtained for the parameters ' K and
T
V ?
(b) What percentage error between experimental and theoretical results will be obtained using the
first equation and the parameters obtained in part (a) to predict
D
I if the device is to operate
at
GS
V =2.1V and
DS
V =2.5V?
(c) What percentage error between experimental and theoretical results will be obtained using the
first equation and the parameters obtained in part (a) to predict
D
I if the device is to operate
at
GS
V =6V and
DS
V =15V?
(d) How can correlation between theoretical and experimental results be improved?

6. Derive the small signal low frequency model of a MOS transistor operating in the ohmic region
with Q point
DQ
I ,
GSQ
V ,
DSQ
V and
BSQ
V . What does this reduce to if V V
DSQ
0 = ?