Professional Documents
Culture Documents
10321037
Formation and Characterization of Manganese Silicide
on Si(111) and Si(100) Substrates
K. H. Kim,
E-mail: khokim@gnu.ac.kr;
E-mail: kangjs@catholic.ac.kr
Hence, the growth of ultra-thin epitaxial MnSi lms on
Si substrates may solve the problem of impedance mis-
match at the metal/semiconductor interface, as well as
the demand for miniaturization. MnSi has been reported
to be formed by a diusion-controlled reaction of a Mn/Si
diusion couple at low temperature (400
C); on the
other hand, MnSi
1.73
is formed by an interface reaction at
higher temperature (600
C) [10,11]. For device appli-
cations, the interface reaction is more favorable than the
diusion couple for the growth of a silicide on Si. Due to
demand in nano-technology, controlled growth of nano-
sized MnSi or MnSi
1.73
on a Si substrate is favorable for
the practical applications. Many eorts have been de-
voted to understanding the initial stage of interface for-
mation at Mn/Si substrate and the growth of ultra-thin
manganese-silicide lms on Si substrate, but the results
show discrepancies [1215]. In this study, we present
the electronic properties of the Mn/Si(111) interface and
ultra thin manganese silicide, which was obtained from
photoemission spectroscopy (PES) and X-ray absorption
spectroscopy (XAS) using synchrotron radiation.
-1032-
Formation and Characterization of Manganese Silicide on Si(111) K. H. Kim et al. -1033-
II. EXPERIMENT
Phosphorous-doped n-Si(111) and n-Si(100) wafers
were used as substrates. The wafers were cleaned in a
diluted HF solution and rinsed in deionized water. Then
it was dried by blowing dry N
2
and loaded in the prepa-
ration chamber (base pressure 2 10
10
Torr) at the
2B1 VUV beamline of Pohang Accelerator Laboratory
(PAL).
Mn was deposited in the preparation chamber by sub-
liming high purity (99.99 %) Mn lump which had been
extensively out-gassed prior to sublimation. The deposi-
tion rate was about 0.25 0.5 ML/min for Si(100) and
1 ML/min for Si(111) substrate. 1 ML of Mn corre-
sponds to 1
A-thick Mn lm [14]. Nominal thickness
(or coverage), , was determined by the exposure time
of Mn ux to the sample surface. We used as the
thickness of Mn lm throughout the paper. Three kinds
of manganese silicide samples were prepared: (1) Mn de-
position at RT followed by annealing at 610
C for 10
min (MS
S
), (2) Mn deposition on hot (T
sub
= 290
C
for Si(111) and 350
C for Si(100) substrate) substrates
(MS
R
) and (3) Mn deposition on hot substrate followed
by post annealing at 610
C for 10 min (MS
P
).
After preparation, samples were transferred to the
analysis chamber. All spectra were taken at RT and the
base pressure in the chamber was lower than 5 10
11
Torr range during measurements. The Fermi level, E
F
,
was determined from the valence-band spectrum of an
Au-foil in electrical contact with the sample. The overall
instrumental resolution was about 200 meV at a photon
energy h 30 60 eV and about 300 meV at h
120 160 eV. All spectra were normalized to the incident
photon ux. The X-ray absorption spectroscopy (XAS)
spectra were obtained by employing the total electron
yield method. The experimental energy resolution for
the XAS data was set to 100 meV at the Si 2p and Mn
2p absorption thresholds (h 500 600 eV).
III. RESULTS AND DISCUSSION
We monitored the low energy electron diraction
(LEED) pattern as a function of on a Si(111)-7 7
surface at RT. The Si(111)-7 7 pattern was easily ob-
tained by ash heating the substrate at 1150
C. This
7 7 pattern weakened and a 1 1 pattern began to de-
velop just after reached 0.2 ML. With increasing ,
only the 7 7 patch remained at the center of the pat-
tern, and it was visible up to 1.5 ML. Figure 1 (a)
shows the LEED pattern obtained at 1 ML. The 1
1 pattern was fully developed at 2 ML. As was in-
creased, the 1 1 pattern began to weaken with a bright
background. No LEED pattern was observed at 4
ML. The variation of the LEED pattern with indicates
that Mn forms an ordered state at low , but changes
to a disordered state as increases. Upon annealing the
Fig. 1. LEED pattern: (a) Si(111)-1 1 pattern with a 7
7 patch and (b)
3-R30
+ 1 1 pattern.
Mn lm of 8 ML at 610
C for 10 min (MS
S
sample),
a
3-R30
), which is the MS
R
sam-
ple, no LEED pattern was observed, but the same LEED
pattern developed after post annealing the MS
R
sample
at 610
C for 10 min (MS
P
sample). The
3-R30
3-R30